DE69322233T2 - Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung - Google Patents
Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69322233T2 DE69322233T2 DE69322233T DE69322233T DE69322233T2 DE 69322233 T2 DE69322233 T2 DE 69322233T2 DE 69322233 T DE69322233 T DE 69322233T DE 69322233 T DE69322233 T DE 69322233T DE 69322233 T2 DE69322233 T2 DE 69322233T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- conductor tracks
- electronic part
- metallic conductor
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22826492 | 1992-08-27 | ||
JP8010893 | 1993-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69322233D1 DE69322233D1 (de) | 1999-01-07 |
DE69322233T2 true DE69322233T2 (de) | 1999-07-08 |
Family
ID=26421158
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69322233T Expired - Lifetime DE69322233T2 (de) | 1992-08-27 | 1993-08-23 | Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung |
DE69333966T Expired - Lifetime DE69333966T2 (de) | 1992-08-27 | 1993-08-23 | Elektronisches Bauteil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69333966T Expired - Lifetime DE69333966T2 (de) | 1992-08-27 | 1993-08-23 | Elektronisches Bauteil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung |
Country Status (3)
Country | Link |
---|---|
EP (2) | EP0725439B1 (de) |
KR (1) | KR0132402B1 (de) |
DE (2) | DE69322233T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6387805B2 (en) | 1997-05-08 | 2002-05-14 | Applied Materials, Inc. | Copper alloy seed layer for copper metallization |
US6037257A (en) * | 1997-05-08 | 2000-03-14 | Applied Materials, Inc. | Sputter deposition and annealing of copper alloy metallization |
US6181012B1 (en) | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
US6516030B1 (en) | 1998-05-14 | 2003-02-04 | Interval Research Corporation | Compression of combined black/white and color video signal |
US6461675B2 (en) * | 1998-07-10 | 2002-10-08 | Cvc Products, Inc. | Method for forming a copper film on a substrate |
SG79235A1 (en) | 1998-07-16 | 2001-03-20 | Univ Singapore | Highly selective and complete interconnect metal line and via/contact hole filling by electroless plating |
US6190732B1 (en) | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6268284B1 (en) | 1998-10-07 | 2001-07-31 | Tokyo Electron Limited | In situ titanium aluminide deposit in high aspect ratio features |
WO2000031878A1 (en) | 1998-11-20 | 2000-06-02 | Interval Research Corporation | Low cost video compression using fast, modified z-coding of wavelet pyramids |
US6294836B1 (en) | 1998-12-22 | 2001-09-25 | Cvc Products Inc. | Semiconductor chip interconnect barrier material and fabrication method |
US6245655B1 (en) | 1999-04-01 | 2001-06-12 | Cvc Products, Inc. | Method for planarized deposition of a material |
US6440849B1 (en) | 1999-10-18 | 2002-08-27 | Agere Systems Guardian Corp. | Microstructure control of copper interconnects |
US6627995B2 (en) | 2000-03-03 | 2003-09-30 | Cvc Products, Inc. | Microelectronic interconnect material with adhesion promotion layer and fabrication method |
US6444263B1 (en) | 2000-09-15 | 2002-09-03 | Cvc Products, Inc. | Method of chemical-vapor deposition of a material |
JP2004179327A (ja) * | 2002-11-26 | 2004-06-24 | Sharp Corp | 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 |
US7749361B2 (en) | 2006-06-02 | 2010-07-06 | Applied Materials, Inc. | Multi-component doping of copper seed layer |
CN110364538A (zh) * | 2018-04-11 | 2019-10-22 | Agc株式会社 | 布线膜和布线膜的形成方法 |
KR102590568B1 (ko) * | 2021-07-06 | 2023-10-18 | 한국과학기술연구원 | 이종 접합 반도체 기판, 그의 제조방법 및 그를 이용한 전자소자 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1981001629A1 (en) * | 1979-11-30 | 1981-06-11 | Western Electric Co | Fine-line solid state device |
US4352239A (en) * | 1980-04-17 | 1982-10-05 | Fairchild Camera And Instrument | Process for suppressing electromigration in conducting lines formed on integrated circuits by control of crystalline boundary orientation |
US4742014A (en) * | 1985-05-10 | 1988-05-03 | Texas Instruments Incorporated | Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor |
US5019891A (en) * | 1988-01-20 | 1991-05-28 | Hitachi, Ltd. | Semiconductor device and method of fabricating the same |
JPH01302842A (ja) * | 1988-05-31 | 1989-12-06 | Nec Corp | 多層配線構造の半導体装置 |
JP2680468B2 (ja) * | 1989-07-01 | 1997-11-19 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
MY107855A (en) * | 1990-07-06 | 1996-06-29 | Tsubouchi Kazuo | Metal film forming method. |
JP3131239B2 (ja) * | 1991-04-25 | 2001-01-31 | キヤノン株式会社 | 半導体回路装置用配線および半導体回路装置 |
JP2937613B2 (ja) * | 1991-07-16 | 1999-08-23 | 日本電気株式会社 | 薄膜配線およびその製造方法 |
-
1993
- 1993-08-23 EP EP96105263A patent/EP0725439B1/de not_active Expired - Lifetime
- 1993-08-23 DE DE69322233T patent/DE69322233T2/de not_active Expired - Lifetime
- 1993-08-23 DE DE69333966T patent/DE69333966T2/de not_active Expired - Lifetime
- 1993-08-23 EP EP93306663A patent/EP0594286B1/de not_active Expired - Lifetime
- 1993-08-26 KR KR1019930016657A patent/KR0132402B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940004755A (ko) | 1994-03-15 |
EP0594286B1 (de) | 1998-11-25 |
DE69333966T2 (de) | 2006-09-14 |
EP0725439A3 (de) | 1996-10-30 |
DE69322233D1 (de) | 1999-01-07 |
EP0725439A2 (de) | 1996-08-07 |
DE69333966D1 (de) | 2006-04-06 |
KR0132402B1 (ko) | 1998-04-15 |
EP0594286A3 (en) | 1994-07-13 |
EP0594286A2 (de) | 1994-04-27 |
EP0725439B1 (de) | 2006-01-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: MOSELPATENT TRIERPATENT, 54290 TRIER |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE SERWE & DR. WAGNER, 54290 TRIER |