CN100386848C - 半导体用合金材料及半导体芯片的制备方法 - Google Patents

半导体用合金材料及半导体芯片的制备方法 Download PDF

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Publication number
CN100386848C
CN100386848C CNB2003801042815A CN200380104281A CN100386848C CN 100386848 C CN100386848 C CN 100386848C CN B2003801042815 A CNB2003801042815 A CN B2003801042815A CN 200380104281 A CN200380104281 A CN 200380104281A CN 100386848 C CN100386848 C CN 100386848C
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CN
China
Prior art keywords
film
alloy
alloy material
semiconductor
auag
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2003801042815A
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English (en)
Chinese (zh)
Other versions
CN1717783A (zh
Inventor
井上和范
石仓千春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Sharp Corp
Original Assignee
Tanaka Kikinzoku Kogyo KK
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK, Sharp Corp filed Critical Tanaka Kikinzoku Kogyo KK
Publication of CN1717783A publication Critical patent/CN1717783A/zh
Application granted granted Critical
Publication of CN100386848C publication Critical patent/CN100386848C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CNB2003801042815A 2002-11-26 2003-10-29 半导体用合金材料及半导体芯片的制备方法 Expired - Lifetime CN100386848C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
JP342797/2002 2002-11-26

Publications (2)

Publication Number Publication Date
CN1717783A CN1717783A (zh) 2006-01-04
CN100386848C true CN100386848C (zh) 2008-05-07

Family

ID=32375901

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003801042815A Expired - Lifetime CN100386848C (zh) 2002-11-26 2003-10-29 半导体用合金材料及半导体芯片的制备方法

Country Status (7)

Country Link
US (1) US20060226546A1 (https=)
JP (1) JP2004179327A (https=)
KR (1) KR100742672B1 (https=)
CN (1) CN100386848C (https=)
AU (1) AU2003280621A1 (https=)
TW (1) TW200416748A (https=)
WO (1) WO2004049415A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578728B (zh) * 2006-12-21 2012-05-23 株式会社神户制钢所 燃料电池的金属隔板用合金皮膜、其制造方法和溅射用靶材、以及金属隔板和燃料电池
JP4176133B1 (ja) * 2007-06-06 2008-11-05 田中貴金属工業株式会社 プローブピン
JP5116101B2 (ja) * 2007-06-28 2013-01-09 新日鉄住金マテリアルズ株式会社 半導体実装用ボンディングワイヤ及びその製造方法
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254761A (ja) * 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム
WO2002023618A1 (en) * 2000-09-18 2002-03-21 Nippon Steel Corporation Bonding wire for semiconductor and method of manufacturing the bonding wire

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770496A (en) * 1971-06-25 1973-11-06 Du Pont Elimination of dielectric degradation in printed bold/dielectric/palladium-silver structures
JPS54144870A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Wire bonding method for semiconductor element
JPS6173326A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体装置の製造方法
JPH03155134A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 集積回路装置の配線電極
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH05109818A (ja) * 1991-10-16 1993-04-30 Hitachi Chem Co Ltd 半導体チツプの接続構造
DE69322233T2 (de) * 1992-08-27 1999-07-08 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung
JPH118341A (ja) * 1997-06-18 1999-01-12 Mitsui High Tec Inc 半導体装置用リードフレーム
JPH11233783A (ja) * 1998-02-17 1999-08-27 Sharp Corp 薄膜トランジスタおよびその製造方法
JP3707548B2 (ja) * 2002-03-12 2005-10-19 株式会社三井ハイテック リードフレーム及びリードフレームの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254761A (ja) * 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム
WO2002023618A1 (en) * 2000-09-18 2002-03-21 Nippon Steel Corporation Bonding wire for semiconductor and method of manufacturing the bonding wire

Also Published As

Publication number Publication date
TW200416748A (en) 2004-09-01
AU2003280621A8 (en) 2004-06-18
JP2004179327A (ja) 2004-06-24
KR20050088086A (ko) 2005-09-01
CN1717783A (zh) 2006-01-04
US20060226546A1 (en) 2006-10-12
TWI304220B (https=) 2008-12-11
KR100742672B1 (ko) 2007-07-25
AU2003280621A1 (en) 2004-06-18
WO2004049415A1 (ja) 2004-06-10

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