AU2003280621A1 - Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing same - Google Patents

Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing same

Info

Publication number
AU2003280621A1
AU2003280621A1 AU2003280621A AU2003280621A AU2003280621A1 AU 2003280621 A1 AU2003280621 A1 AU 2003280621A1 AU 2003280621 A AU2003280621 A AU 2003280621A AU 2003280621 A AU2003280621 A AU 2003280621A AU 2003280621 A1 AU2003280621 A1 AU 2003280621A1
Authority
AU
Australia
Prior art keywords
alloy material
semiconductor
manufacturing same
semiconductor chip
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003280621A
Other languages
English (en)
Other versions
AU2003280621A8 (en
Inventor
Kazunori Inoue
Chiharu Ishikura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of AU2003280621A8 publication Critical patent/AU2003280621A8/xx
Publication of AU2003280621A1 publication Critical patent/AU2003280621A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
AU2003280621A 2002-11-26 2003-10-29 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing same Abandoned AU2003280621A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-342797 2002-11-26
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法
PCT/JP2003/013890 WO2004049415A1 (ja) 2002-11-26 2003-10-29 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法

Publications (2)

Publication Number Publication Date
AU2003280621A8 AU2003280621A8 (en) 2004-06-18
AU2003280621A1 true AU2003280621A1 (en) 2004-06-18

Family

ID=32375901

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003280621A Abandoned AU2003280621A1 (en) 2002-11-26 2003-10-29 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing same

Country Status (7)

Country Link
US (1) US20060226546A1 (https=)
JP (1) JP2004179327A (https=)
KR (1) KR100742672B1 (https=)
CN (1) CN100386848C (https=)
AU (1) AU2003280621A1 (https=)
TW (1) TW200416748A (https=)
WO (1) WO2004049415A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578728B (zh) * 2006-12-21 2012-05-23 株式会社神户制钢所 燃料电池的金属隔板用合金皮膜、其制造方法和溅射用靶材、以及金属隔板和燃料电池
JP4176133B1 (ja) * 2007-06-06 2008-11-05 田中貴金属工業株式会社 プローブピン
JP5116101B2 (ja) * 2007-06-28 2013-01-09 新日鉄住金マテリアルズ株式会社 半導体実装用ボンディングワイヤ及びその製造方法
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770496A (en) * 1971-06-25 1973-11-06 Du Pont Elimination of dielectric degradation in printed bold/dielectric/palladium-silver structures
JPS54144870A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Wire bonding method for semiconductor element
JPS60254761A (ja) 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム
JPS6173326A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体装置の製造方法
JPH03155134A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 集積回路装置の配線電極
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH05109818A (ja) * 1991-10-16 1993-04-30 Hitachi Chem Co Ltd 半導体チツプの接続構造
DE69322233T2 (de) * 1992-08-27 1999-07-08 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung
JPH118341A (ja) * 1997-06-18 1999-01-12 Mitsui High Tec Inc 半導体装置用リードフレーム
JPH11233783A (ja) * 1998-02-17 1999-08-27 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4868694B2 (ja) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
JP3707548B2 (ja) * 2002-03-12 2005-10-19 株式会社三井ハイテック リードフレーム及びリードフレームの製造方法

Also Published As

Publication number Publication date
TW200416748A (en) 2004-09-01
AU2003280621A8 (en) 2004-06-18
JP2004179327A (ja) 2004-06-24
KR20050088086A (ko) 2005-09-01
CN1717783A (zh) 2006-01-04
CN100386848C (zh) 2008-05-07
US20060226546A1 (en) 2006-10-12
TWI304220B (https=) 2008-12-11
KR100742672B1 (ko) 2007-07-25
WO2004049415A1 (ja) 2004-06-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase