TW200416748A - Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing the same - Google Patents

Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing the same Download PDF

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Publication number
TW200416748A
TW200416748A TW092133066A TW92133066A TW200416748A TW 200416748 A TW200416748 A TW 200416748A TW 092133066 A TW092133066 A TW 092133066A TW 92133066 A TW92133066 A TW 92133066A TW 200416748 A TW200416748 A TW 200416748A
Authority
TW
Taiwan
Prior art keywords
film
alloy material
alloy
semiconductor
auag
Prior art date
Application number
TW092133066A
Other languages
English (en)
Chinese (zh)
Other versions
TWI304220B (https=
Inventor
Kazunori Inoue
Chiharu Ishikura
Original Assignee
Sharp Kk
Tanaka Precious Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk, Tanaka Precious Metal Ind filed Critical Sharp Kk
Publication of TW200416748A publication Critical patent/TW200416748A/zh
Application granted granted Critical
Publication of TWI304220B publication Critical patent/TWI304220B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW092133066A 2002-11-26 2003-11-25 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing the same TW200416748A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002342797A JP2004179327A (ja) 2002-11-26 2002-11-26 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法

Publications (2)

Publication Number Publication Date
TW200416748A true TW200416748A (en) 2004-09-01
TWI304220B TWI304220B (https=) 2008-12-11

Family

ID=32375901

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092133066A TW200416748A (en) 2002-11-26 2003-11-25 Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing the same

Country Status (7)

Country Link
US (1) US20060226546A1 (https=)
JP (1) JP2004179327A (https=)
KR (1) KR100742672B1 (https=)
CN (1) CN100386848C (https=)
AU (1) AU2003280621A1 (https=)
TW (1) TW200416748A (https=)
WO (1) WO2004049415A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578728B (zh) * 2006-12-21 2012-05-23 株式会社神户制钢所 燃料电池的金属隔板用合金皮膜、其制造方法和溅射用靶材、以及金属隔板和燃料电池
JP4176133B1 (ja) * 2007-06-06 2008-11-05 田中貴金属工業株式会社 プローブピン
JP5116101B2 (ja) * 2007-06-28 2013-01-09 新日鉄住金マテリアルズ株式会社 半導体実装用ボンディングワイヤ及びその製造方法
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770496A (en) * 1971-06-25 1973-11-06 Du Pont Elimination of dielectric degradation in printed bold/dielectric/palladium-silver structures
JPS54144870A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Wire bonding method for semiconductor element
JPS60254761A (ja) 1984-05-31 1985-12-16 Sumitomo Electric Ind Ltd 半導体装置用リ−ドフレ−ム
JPS6173326A (ja) * 1984-09-19 1986-04-15 Hitachi Ltd 半導体装置の製造方法
JPH03155134A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 集積回路装置の配線電極
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
JPH05109818A (ja) * 1991-10-16 1993-04-30 Hitachi Chem Co Ltd 半導体チツプの接続構造
DE69322233T2 (de) * 1992-08-27 1999-07-08 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung
JPH118341A (ja) * 1997-06-18 1999-01-12 Mitsui High Tec Inc 半導体装置用リードフレーム
JPH11233783A (ja) * 1998-02-17 1999-08-27 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4868694B2 (ja) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
JP3707548B2 (ja) * 2002-03-12 2005-10-19 株式会社三井ハイテック リードフレーム及びリードフレームの製造方法

Also Published As

Publication number Publication date
AU2003280621A8 (en) 2004-06-18
JP2004179327A (ja) 2004-06-24
KR20050088086A (ko) 2005-09-01
CN1717783A (zh) 2006-01-04
CN100386848C (zh) 2008-05-07
US20060226546A1 (en) 2006-10-12
TWI304220B (https=) 2008-12-11
KR100742672B1 (ko) 2007-07-25
AU2003280621A1 (en) 2004-06-18
WO2004049415A1 (ja) 2004-06-10

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