JP2004179327A - 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 - Google Patents
半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 Download PDFInfo
- Publication number
- JP2004179327A JP2004179327A JP2002342797A JP2002342797A JP2004179327A JP 2004179327 A JP2004179327 A JP 2004179327A JP 2002342797 A JP2002342797 A JP 2002342797A JP 2002342797 A JP2002342797 A JP 2002342797A JP 2004179327 A JP2004179327 A JP 2004179327A
- Authority
- JP
- Japan
- Prior art keywords
- alloy material
- film
- alloy
- semiconductor
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002342797A JP2004179327A (ja) | 2002-11-26 | 2002-11-26 | 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 |
| US10/536,406 US20060226546A1 (en) | 2002-11-26 | 2003-10-29 | Alloy material for semiconductors, semiconductor chip using the alloy material and production method of the same |
| KR1020057009567A KR100742672B1 (ko) | 2002-11-26 | 2003-10-29 | 반도체용 합금재료, 그 합금재료를 사용한 반도체 칩 및제조방법 |
| PCT/JP2003/013890 WO2004049415A1 (ja) | 2002-11-26 | 2003-10-29 | 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 |
| CNB2003801042815A CN100386848C (zh) | 2002-11-26 | 2003-10-29 | 半导体用合金材料及半导体芯片的制备方法 |
| AU2003280621A AU2003280621A1 (en) | 2002-11-26 | 2003-10-29 | Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing same |
| TW092133066A TW200416748A (en) | 2002-11-26 | 2003-11-25 | Alloy material for semiconductor, semiconductor chip using such alloy material, and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002342797A JP2004179327A (ja) | 2002-11-26 | 2002-11-26 | 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004179327A true JP2004179327A (ja) | 2004-06-24 |
| JP2004179327A5 JP2004179327A5 (https=) | 2005-09-29 |
Family
ID=32375901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002342797A Pending JP2004179327A (ja) | 2002-11-26 | 2002-11-26 | 半導体用合金材料、該合金材料を用いた半導体チップ及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060226546A1 (https=) |
| JP (1) | JP2004179327A (https=) |
| KR (1) | KR100742672B1 (https=) |
| CN (1) | CN100386848C (https=) |
| AU (1) | AU2003280621A1 (https=) |
| TW (1) | TW200416748A (https=) |
| WO (1) | WO2004049415A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101578728B (zh) * | 2006-12-21 | 2012-05-23 | 株式会社神户制钢所 | 燃料电池的金属隔板用合金皮膜、其制造方法和溅射用靶材、以及金属隔板和燃料电池 |
| JP4176133B1 (ja) * | 2007-06-06 | 2008-11-05 | 田中貴金属工業株式会社 | プローブピン |
| JP5116101B2 (ja) * | 2007-06-28 | 2013-01-09 | 新日鉄住金マテリアルズ株式会社 | 半導体実装用ボンディングワイヤ及びその製造方法 |
| DE102014111895A1 (de) * | 2014-08-20 | 2016-02-25 | Infineon Technologies Ag | Metallisierte elektrische Komponente |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3770496A (en) * | 1971-06-25 | 1973-11-06 | Du Pont | Elimination of dielectric degradation in printed bold/dielectric/palladium-silver structures |
| JPS54144870A (en) * | 1978-05-04 | 1979-11-12 | Mitsubishi Electric Corp | Wire bonding method for semiconductor element |
| JPS60254761A (ja) | 1984-05-31 | 1985-12-16 | Sumitomo Electric Ind Ltd | 半導体装置用リ−ドフレ−ム |
| JPS6173326A (ja) * | 1984-09-19 | 1986-04-15 | Hitachi Ltd | 半導体装置の製造方法 |
| JPH03155134A (ja) * | 1989-11-13 | 1991-07-03 | Seiko Epson Corp | 集積回路装置の配線電極 |
| US5364706A (en) * | 1990-07-20 | 1994-11-15 | Tanaka Denshi Kogyo Kabushiki Kaisha | Clad bonding wire for semiconductor device |
| JPH05109818A (ja) * | 1991-10-16 | 1993-04-30 | Hitachi Chem Co Ltd | 半導体チツプの接続構造 |
| DE69322233T2 (de) * | 1992-08-27 | 1999-07-08 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Elektronisches Teil mit metallischen Leiterbahnen und Verfahren zu seiner Herstellung |
| JPH118341A (ja) * | 1997-06-18 | 1999-01-12 | Mitsui High Tec Inc | 半導体装置用リードフレーム |
| JPH11233783A (ja) * | 1998-02-17 | 1999-08-27 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
| JP4868694B2 (ja) * | 2000-09-18 | 2012-02-01 | 新日鉄マテリアルズ株式会社 | 半導体用ボンディングワイヤ |
| JP3707548B2 (ja) * | 2002-03-12 | 2005-10-19 | 株式会社三井ハイテック | リードフレーム及びリードフレームの製造方法 |
-
2002
- 2002-11-26 JP JP2002342797A patent/JP2004179327A/ja active Pending
-
2003
- 2003-10-29 WO PCT/JP2003/013890 patent/WO2004049415A1/ja not_active Ceased
- 2003-10-29 AU AU2003280621A patent/AU2003280621A1/en not_active Abandoned
- 2003-10-29 CN CNB2003801042815A patent/CN100386848C/zh not_active Expired - Lifetime
- 2003-10-29 US US10/536,406 patent/US20060226546A1/en not_active Abandoned
- 2003-10-29 KR KR1020057009567A patent/KR100742672B1/ko not_active Expired - Lifetime
- 2003-11-25 TW TW092133066A patent/TW200416748A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200416748A (en) | 2004-09-01 |
| AU2003280621A8 (en) | 2004-06-18 |
| KR20050088086A (ko) | 2005-09-01 |
| CN1717783A (zh) | 2006-01-04 |
| CN100386848C (zh) | 2008-05-07 |
| US20060226546A1 (en) | 2006-10-12 |
| TWI304220B (https=) | 2008-12-11 |
| KR100742672B1 (ko) | 2007-07-25 |
| AU2003280621A1 (en) | 2004-06-18 |
| WO2004049415A1 (ja) | 2004-06-10 |
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