KR100701531B1 - 반도체 패키지 및 그 제조방법 - Google Patents

반도체 패키지 및 그 제조방법 Download PDF

Info

Publication number
KR100701531B1
KR100701531B1 KR1020050055789A KR20050055789A KR100701531B1 KR 100701531 B1 KR100701531 B1 KR 100701531B1 KR 1020050055789 A KR1020050055789 A KR 1020050055789A KR 20050055789 A KR20050055789 A KR 20050055789A KR 100701531 B1 KR100701531 B1 KR 100701531B1
Authority
KR
South Korea
Prior art keywords
insulating film
substrate
encapsulant
functional element
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050055789A
Other languages
English (en)
Korean (ko)
Other versions
KR20060048559A (ko
Inventor
미치카즈 도미타
다츠오 스에마스
사야카 히라후네
Original Assignee
가부시키가이샤후지쿠라
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤후지쿠라 filed Critical 가부시키가이샤후지쿠라
Publication of KR20060048559A publication Critical patent/KR20060048559A/ko
Application granted granted Critical
Publication of KR100701531B1 publication Critical patent/KR100701531B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • H10W76/10
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • H10W20/023
    • H10W20/0234
    • H10W20/0242
    • H10W72/0198

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020050055789A 2004-06-30 2005-06-27 반도체 패키지 및 그 제조방법 Expired - Fee Related KR100701531B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004194663A JP4271625B2 (ja) 2004-06-30 2004-06-30 半導体パッケージ及びその製造方法
JPJP-P-2004-00194663 2004-06-30

Publications (2)

Publication Number Publication Date
KR20060048559A KR20060048559A (ko) 2006-05-18
KR100701531B1 true KR100701531B1 (ko) 2007-03-29

Family

ID=35134698

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050055789A Expired - Fee Related KR100701531B1 (ko) 2004-06-30 2005-06-27 반도체 패키지 및 그 제조방법

Country Status (6)

Country Link
US (2) US7274101B2 (enExample)
EP (1) EP1612867B1 (enExample)
JP (1) JP4271625B2 (enExample)
KR (1) KR100701531B1 (enExample)
CN (1) CN100483693C (enExample)
DE (1) DE602005014170D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101608084B1 (ko) 2007-12-27 2016-03-31 스태츠 칩팩, 엘티디. 광학 센서를 구비한 반도체 소자 및 그 소자의 프론트 및 백사이드상에 상호접속 구조체를 형성하는 방법

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4000507B2 (ja) 2001-10-04 2007-10-31 ソニー株式会社 固体撮像装置の製造方法
JP4494745B2 (ja) * 2003-09-25 2010-06-30 浜松ホトニクス株式会社 半導体装置
JP4494746B2 (ja) * 2003-09-25 2010-06-30 浜松ホトニクス株式会社 半導体装置
JP4351012B2 (ja) * 2003-09-25 2009-10-28 浜松ホトニクス株式会社 半導体装置
JP4003780B2 (ja) * 2004-09-17 2007-11-07 カシオ計算機株式会社 半導体装置及びその製造方法
JP4057017B2 (ja) * 2005-01-31 2008-03-05 富士通株式会社 電子装置及びその製造方法
JP2007019107A (ja) * 2005-07-05 2007-01-25 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US8217473B2 (en) * 2005-07-29 2012-07-10 Hewlett-Packard Development Company, L.P. Micro electro-mechanical system packaging and interconnect
US7288757B2 (en) 2005-09-01 2007-10-30 Micron Technology, Inc. Microelectronic imaging devices and associated methods for attaching transmissive elements
US20070075236A1 (en) * 2005-09-30 2007-04-05 Po-Hung Chen Packaging method of a light-sensing semiconductor device and packaging structure thereof
JP5010244B2 (ja) * 2005-12-15 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置
TWI284966B (en) * 2006-01-12 2007-08-01 Touch Micro System Tech Method for wafer level package and fabricating cap structures
CN100536098C (zh) * 2006-01-25 2009-09-02 探微科技股份有限公司 晶片级封装与制作上盖结构的方法
CN100446202C (zh) * 2006-01-25 2008-12-24 探微科技股份有限公司 晶片级封装与制作上盖结构的方法
CN100470819C (zh) * 2006-01-25 2009-03-18 日月光半导体制造股份有限公司 影像组件的封装结构与其形成方法
TWI278045B (en) * 2006-03-14 2007-04-01 Touch Micro System Tech Method for wafer-level package
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
US20080136012A1 (en) * 2006-12-08 2008-06-12 Advanced Chip Engineering Technology Inc. Imagine sensor package and forming method of the same
US20080169556A1 (en) * 2007-01-16 2008-07-17 Xin Tec Inc. Chip package module heat sink
US8076744B2 (en) * 2007-01-25 2011-12-13 Chien-Hung Liu Photosensitizing chip package and manufacturing method thereof
US8304923B2 (en) * 2007-03-29 2012-11-06 ADL Engineering Inc. Chip packaging structure
CN101279709B (zh) * 2007-04-04 2011-01-19 财团法人工业技术研究院 微型声波传感器的多层式封装结构
JP5301108B2 (ja) * 2007-04-20 2013-09-25 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US7528420B2 (en) * 2007-05-23 2009-05-05 Visera Technologies Company Limited Image sensing devices and methods for fabricating the same
JP2008300400A (ja) * 2007-05-29 2008-12-11 Fujikura Ltd 半導体パッケージ基板、半導体パッケージ基板の製造方法、および半導体パッケージの製造方法
JP4863935B2 (ja) * 2007-06-20 2012-01-25 パナソニック株式会社 電子部品パッケージおよびその製造方法
JP2009032929A (ja) * 2007-07-27 2009-02-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4687742B2 (ja) * 2007-08-27 2011-05-25 株式会社デンソー 半導体装置の製造方法
EP2031653B1 (en) * 2007-08-27 2014-03-05 Denso Corporation Manufacturing method for a semiconductor device having multiple element formation regions
DE102007060632A1 (de) * 2007-12-17 2009-06-18 Robert Bosch Gmbh Verfahren zum Herstellen eines Kappenwafers für einen Sensor
JP4799542B2 (ja) * 2007-12-27 2011-10-26 株式会社東芝 半導体パッケージ
JP4939452B2 (ja) * 2008-02-07 2012-05-23 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP5344336B2 (ja) * 2008-02-27 2013-11-20 株式会社ザイキューブ 半導体装置
TWI384602B (zh) * 2008-06-13 2013-02-01 欣興電子股份有限公司 嵌埋有感光半導體晶片之封裝基板及其製法
KR100997113B1 (ko) * 2008-08-01 2010-11-30 엘지전자 주식회사 태양전지 및 그의 제조방법
US7964448B2 (en) * 2008-09-18 2011-06-21 Infineon Technologies Ag Electronic device and method of manufacturing same
KR101009103B1 (ko) * 2008-10-27 2011-01-18 삼성전기주식회사 양면 전극 패키지 및 그 제조방법
KR100997797B1 (ko) * 2009-04-10 2010-12-02 주식회사 하이닉스반도체 이미지 센서 모듈
JP2010245571A (ja) * 2010-07-23 2010-10-28 Oki Semiconductor Co Ltd 半導体装置の製造方法
JP2012039005A (ja) * 2010-08-10 2012-02-23 Toshiba Corp 半導体装置およびその製造方法
US8168474B1 (en) * 2011-01-10 2012-05-01 International Business Machines Corporation Self-dicing chips using through silicon vias
TWI489600B (zh) * 2011-12-28 2015-06-21 精材科技股份有限公司 半導體堆疊結構及其製法
US8772930B2 (en) * 2012-01-19 2014-07-08 Hong Kong Applied Science and Technology Research Institute Company Limited Increased surface area electrical contacts for microelectronic packages
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US8653634B2 (en) 2012-06-11 2014-02-18 Advanced Semiconductor Engineering, Inc. EMI-shielded semiconductor devices and methods of making
WO2014069362A1 (ja) * 2012-11-05 2014-05-08 ソニー株式会社 光学装置およびその製造方法、ならびに電子機器
US9371982B2 (en) * 2013-08-15 2016-06-21 Maxim Integrated Products, Inc. Glass based multichip package
US9224650B2 (en) * 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
CN105261623A (zh) * 2014-07-16 2016-01-20 中芯国际集成电路制造(上海)有限公司 芯片、其制备方法、及包括其的图像传感器
CN106298712B (zh) * 2015-05-18 2019-09-20 成都艾德沃传感技术有限公司 一种传感器及传感器的制备方法
CN108496147A (zh) * 2016-01-29 2018-09-04 孙业扬 使用光传感器采集货架系统上商品库存数据
TWI649856B (zh) * 2016-05-13 2019-02-01 Xintec Inc. 晶片封裝體與其製造方法
CN107777657A (zh) * 2016-08-25 2018-03-09 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法和电子装置
TWI782830B (zh) * 2021-12-21 2022-11-01 勝麗國際股份有限公司 感測器封裝結構
CN114464540B (zh) * 2022-02-11 2025-01-28 展讯通信(上海)有限公司 元器件封装方法及元器件封装结构
CN118824956A (zh) * 2023-04-17 2024-10-22 Jcet星科金朋韩国有限公司 半导体封装条带和用于形成半导体器件的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3216650B2 (ja) 1990-08-27 2001-10-09 オリンパス光学工業株式会社 固体撮像装置
US6013948A (en) * 1995-11-27 2000-01-11 Micron Technology, Inc. Stackable chip scale semiconductor package with mating contacts on opposed surfaces
US5674785A (en) * 1995-11-27 1997-10-07 Micron Technology, Inc. Method of producing a single piece package for semiconductor die
JPH09205174A (ja) 1996-01-24 1997-08-05 Olympus Optical Co Ltd 気密端子基板とその製造方法
KR100271656B1 (ko) 1998-05-30 2000-11-15 김영환 비지에이 반도체 패키지 및 그 제조방법
US6229404B1 (en) * 1998-08-31 2001-05-08 Kyocera Corporation Crystal oscillator
US6384473B1 (en) 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
JP2001351997A (ja) 2000-06-09 2001-12-21 Canon Inc 受光センサーの実装構造体およびその使用方法
EP1251566A1 (en) 2001-04-19 2002-10-23 United Test Center Inc. Low profile optically-sensitive semiconductor package
JP4443865B2 (ja) 2002-06-24 2010-03-31 富士フイルム株式会社 固体撮像装置およびその製造方法
JP2005303258A (ja) 2004-03-16 2005-10-27 Fujikura Ltd デバイス及びその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
유럽특허공보 1376705호
유럽특허공보 1577942호

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101608084B1 (ko) 2007-12-27 2016-03-31 스태츠 칩팩, 엘티디. 광학 센서를 구비한 반도체 소자 및 그 소자의 프론트 및 백사이드상에 상호접속 구조체를 형성하는 방법

Also Published As

Publication number Publication date
JP4271625B2 (ja) 2009-06-03
CN100483693C (zh) 2009-04-29
DE602005014170D1 (de) 2009-06-10
KR20060048559A (ko) 2006-05-18
EP1612867A3 (en) 2006-05-24
EP1612867A2 (en) 2006-01-04
US7274101B2 (en) 2007-09-25
JP2006019428A (ja) 2006-01-19
US7368321B2 (en) 2008-05-06
US20070264753A1 (en) 2007-11-15
CN1716579A (zh) 2006-01-04
US20060001147A1 (en) 2006-01-05
EP1612867B1 (en) 2009-04-29

Similar Documents

Publication Publication Date Title
KR100701531B1 (ko) 반도체 패키지 및 그 제조방법
JP4847415B2 (ja) 低アスペクト比のウエハ貫通ホールを使用したウエハレベルのパッケージング方法
US9771259B2 (en) Method for fabricating electronic device package
JP4977388B2 (ja) 集積回路ダイをウエハレベルパッケージングする方法及び該方法を用いて得られる複合ウエハ並びにウエハレベルパッケージ
TWI573253B (zh) 具暴露感測器陣列之感測器封裝體及其製作方法
EP1167281B1 (en) Chip scale surface-mountable packaging method for electronic and MEMS devices
US20100059877A1 (en) Method for packaging electronic devices and integrated circuits
CN101983424B (zh) 半导体封装体及其制造方法
US7829993B2 (en) Semiconductor apparatus
US20090194777A1 (en) Optoelectronic device submount
CN102782862A (zh) 芯片封装体及其制造方法
CN101142137A (zh) 微机械元件和制造微机械元件的方法
US20100176507A1 (en) Semiconductor-based submount with electrically conductive feed-throughs
KR100867508B1 (ko) 이미지 센서의 웨이퍼 레벨 패키징 방법
US20040166662A1 (en) MEMS wafer level chip scale package
CN107591375A (zh) 晶片封装体及其制作方法
CN106252308B (zh) 晶片封装体与其制备方法
JP2004193600A (ja) 半導体装置及びその製造方法、半導体装置用カバー並びに電子機器
JP4908528B2 (ja) 半導体パッケージ
US20120241937A1 (en) Package structure having micro-electromechanical element
CN101383299B (zh) 电子元件的晶圆级封装及其制造方法
TWI590431B (zh) 晶片封裝體及其製作方法
JP5408995B2 (ja) 半導体パッケージ
HK1220288B (zh) 具有暴露的传感器阵列的传感器封装以及制造其的方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130304

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140228

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20150324

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20150324

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000