DE602005014170D1 - Gehäuse für Halbeleiter und Herstellungsverfahren dazu - Google Patents

Gehäuse für Halbeleiter und Herstellungsverfahren dazu

Info

Publication number
DE602005014170D1
DE602005014170D1 DE602005014170T DE602005014170T DE602005014170D1 DE 602005014170 D1 DE602005014170 D1 DE 602005014170D1 DE 602005014170 T DE602005014170 T DE 602005014170T DE 602005014170 T DE602005014170 T DE 602005014170T DE 602005014170 D1 DE602005014170 D1 DE 602005014170D1
Authority
DE
Germany
Prior art keywords
housing
manufacturing process
half ladder
ladder
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005014170T
Other languages
German (de)
English (en)
Inventor
Tomita Michikazu
Suemasu Tatsuo
Hirafune Sayaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Publication of DE602005014170D1 publication Critical patent/DE602005014170D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H10W76/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H10W20/023—
    • H10W20/0234—
    • H10W20/0242—
    • H10W72/0198—
DE602005014170T 2004-06-30 2005-06-28 Gehäuse für Halbeleiter und Herstellungsverfahren dazu Expired - Lifetime DE602005014170D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194663A JP4271625B2 (ja) 2004-06-30 2004-06-30 半導体パッケージ及びその製造方法

Publications (1)

Publication Number Publication Date
DE602005014170D1 true DE602005014170D1 (de) 2009-06-10

Family

ID=35134698

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005014170T Expired - Lifetime DE602005014170D1 (de) 2004-06-30 2005-06-28 Gehäuse für Halbeleiter und Herstellungsverfahren dazu

Country Status (6)

Country Link
US (2) US7274101B2 (enExample)
EP (1) EP1612867B1 (enExample)
JP (1) JP4271625B2 (enExample)
KR (1) KR100701531B1 (enExample)
CN (1) CN100483693C (enExample)
DE (1) DE602005014170D1 (enExample)

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JP4000507B2 (ja) 2001-10-04 2007-10-31 ソニー株式会社 固体撮像装置の製造方法
JP4494745B2 (ja) * 2003-09-25 2010-06-30 浜松ホトニクス株式会社 半導体装置
JP4494746B2 (ja) * 2003-09-25 2010-06-30 浜松ホトニクス株式会社 半導体装置
JP4351012B2 (ja) * 2003-09-25 2009-10-28 浜松ホトニクス株式会社 半導体装置
JP4003780B2 (ja) * 2004-09-17 2007-11-07 カシオ計算機株式会社 半導体装置及びその製造方法
JP4057017B2 (ja) * 2005-01-31 2008-03-05 富士通株式会社 電子装置及びその製造方法
JP2007019107A (ja) * 2005-07-05 2007-01-25 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US8217473B2 (en) * 2005-07-29 2012-07-10 Hewlett-Packard Development Company, L.P. Micro electro-mechanical system packaging and interconnect
US7288757B2 (en) 2005-09-01 2007-10-30 Micron Technology, Inc. Microelectronic imaging devices and associated methods for attaching transmissive elements
US20070075236A1 (en) * 2005-09-30 2007-04-05 Po-Hung Chen Packaging method of a light-sensing semiconductor device and packaging structure thereof
JP5010244B2 (ja) * 2005-12-15 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置
TWI284966B (en) * 2006-01-12 2007-08-01 Touch Micro System Tech Method for wafer level package and fabricating cap structures
CN100536098C (zh) * 2006-01-25 2009-09-02 探微科技股份有限公司 晶片级封装与制作上盖结构的方法
CN100446202C (zh) * 2006-01-25 2008-12-24 探微科技股份有限公司 晶片级封装与制作上盖结构的方法
CN100470819C (zh) * 2006-01-25 2009-03-18 日月光半导体制造股份有限公司 影像组件的封装结构与其形成方法
TWI278045B (en) * 2006-03-14 2007-04-01 Touch Micro System Tech Method for wafer-level package
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
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US20080169556A1 (en) * 2007-01-16 2008-07-17 Xin Tec Inc. Chip package module heat sink
US8076744B2 (en) * 2007-01-25 2011-12-13 Chien-Hung Liu Photosensitizing chip package and manufacturing method thereof
US8304923B2 (en) * 2007-03-29 2012-11-06 ADL Engineering Inc. Chip packaging structure
CN101279709B (zh) * 2007-04-04 2011-01-19 财团法人工业技术研究院 微型声波传感器的多层式封装结构
JP5301108B2 (ja) * 2007-04-20 2013-09-25 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US7528420B2 (en) * 2007-05-23 2009-05-05 Visera Technologies Company Limited Image sensing devices and methods for fabricating the same
JP2008300400A (ja) * 2007-05-29 2008-12-11 Fujikura Ltd 半導体パッケージ基板、半導体パッケージ基板の製造方法、および半導体パッケージの製造方法
JP4863935B2 (ja) * 2007-06-20 2012-01-25 パナソニック株式会社 電子部品パッケージおよびその製造方法
JP2009032929A (ja) * 2007-07-27 2009-02-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4687742B2 (ja) * 2007-08-27 2011-05-25 株式会社デンソー 半導体装置の製造方法
EP2031653B1 (en) * 2007-08-27 2014-03-05 Denso Corporation Manufacturing method for a semiconductor device having multiple element formation regions
DE102007060632A1 (de) * 2007-12-17 2009-06-18 Robert Bosch Gmbh Verfahren zum Herstellen eines Kappenwafers für einen Sensor
JP4799542B2 (ja) * 2007-12-27 2011-10-26 株式会社東芝 半導体パッケージ
US7851246B2 (en) 2007-12-27 2010-12-14 Stats Chippac, Ltd. Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device
JP4939452B2 (ja) * 2008-02-07 2012-05-23 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP5344336B2 (ja) * 2008-02-27 2013-11-20 株式会社ザイキューブ 半導体装置
TWI384602B (zh) * 2008-06-13 2013-02-01 欣興電子股份有限公司 嵌埋有感光半導體晶片之封裝基板及其製法
KR100997113B1 (ko) * 2008-08-01 2010-11-30 엘지전자 주식회사 태양전지 및 그의 제조방법
US7964448B2 (en) * 2008-09-18 2011-06-21 Infineon Technologies Ag Electronic device and method of manufacturing same
KR101009103B1 (ko) * 2008-10-27 2011-01-18 삼성전기주식회사 양면 전극 패키지 및 그 제조방법
KR100997797B1 (ko) * 2009-04-10 2010-12-02 주식회사 하이닉스반도체 이미지 센서 모듈
JP2010245571A (ja) * 2010-07-23 2010-10-28 Oki Semiconductor Co Ltd 半導体装置の製造方法
JP2012039005A (ja) * 2010-08-10 2012-02-23 Toshiba Corp 半導体装置およびその製造方法
US8168474B1 (en) * 2011-01-10 2012-05-01 International Business Machines Corporation Self-dicing chips using through silicon vias
TWI489600B (zh) * 2011-12-28 2015-06-21 精材科技股份有限公司 半導體堆疊結構及其製法
US8772930B2 (en) * 2012-01-19 2014-07-08 Hong Kong Applied Science and Technology Research Institute Company Limited Increased surface area electrical contacts for microelectronic packages
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US8653634B2 (en) 2012-06-11 2014-02-18 Advanced Semiconductor Engineering, Inc. EMI-shielded semiconductor devices and methods of making
WO2014069362A1 (ja) * 2012-11-05 2014-05-08 ソニー株式会社 光学装置およびその製造方法、ならびに電子機器
US9371982B2 (en) * 2013-08-15 2016-06-21 Maxim Integrated Products, Inc. Glass based multichip package
US9224650B2 (en) * 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
CN105261623A (zh) * 2014-07-16 2016-01-20 中芯国际集成电路制造(上海)有限公司 芯片、其制备方法、及包括其的图像传感器
CN106298712B (zh) * 2015-05-18 2019-09-20 成都艾德沃传感技术有限公司 一种传感器及传感器的制备方法
CN108496147A (zh) * 2016-01-29 2018-09-04 孙业扬 使用光传感器采集货架系统上商品库存数据
TWI649856B (zh) * 2016-05-13 2019-02-01 Xintec Inc. 晶片封裝體與其製造方法
CN107777657A (zh) * 2016-08-25 2018-03-09 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法和电子装置
TWI782830B (zh) * 2021-12-21 2022-11-01 勝麗國際股份有限公司 感測器封裝結構
CN114464540B (zh) * 2022-02-11 2025-01-28 展讯通信（上海）有限公司 元器件封装方法及元器件封装结构
CN118824956A (zh) * 2023-04-17 2024-10-22 Jcet星科金朋韩国有限公司 半导体封装条带和用于形成半导体器件的方法

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JP3216650B2 (ja) 1990-08-27 2001-10-09 オリンパス光学工業株式会社 固体撮像装置
US6013948A (en) * 1995-11-27 2000-01-11 Micron Technology, Inc. Stackable chip scale semiconductor package with mating contacts on opposed surfaces
US5674785A (en) * 1995-11-27 1997-10-07 Micron Technology, Inc. Method of producing a single piece package for semiconductor die
JPH09205174A (ja) 1996-01-24 1997-08-05 Olympus Optical Co Ltd 気密端子基板とその製造方法
KR100271656B1 (ko) 1998-05-30 2000-11-15 김영환 비지에이 반도체 패키지 및 그 제조방법
US6229404B1 (en) * 1998-08-31 2001-05-08 Kyocera Corporation Crystal oscillator
US6384473B1 (en) 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
JP2001351997A (ja) 2000-06-09 2001-12-21 Canon Inc 受光センサーの実装構造体およびその使用方法
EP1251566A1 (en) 2001-04-19 2002-10-23 United Test Center Inc. Low profile optically-sensitive semiconductor package
JP4443865B2 (ja) 2002-06-24 2010-03-31 富士フイルム株式会社 固体撮像装置およびその製造方法
JP2005303258A (ja) 2004-03-16 2005-10-27 Fujikura Ltd デバイス及びその製造方法

Also Published As

Publication number Publication date
JP4271625B2 (ja) 2009-06-03
CN100483693C (zh) 2009-04-29
KR20060048559A (ko) 2006-05-18
EP1612867A3 (en) 2006-05-24
EP1612867A2 (en) 2006-01-04
US7274101B2 (en) 2007-09-25
JP2006019428A (ja) 2006-01-19
US7368321B2 (en) 2008-05-06
US20070264753A1 (en) 2007-11-15
CN1716579A (zh) 2006-01-04
US20060001147A1 (en) 2006-01-05
EP1612867B1 (en) 2009-04-29
KR100701531B1 (ko) 2007-03-29

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Legal Events

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