KR100693078B1 - Al계 Ⅲ-Ⅴ족 화합물 반도체의 기상 성장 방법, Al계Ⅲ-Ⅴ족 화합물 반도체의 제조 방법 및 제조 장치 - Google Patents
Al계 Ⅲ-Ⅴ족 화합물 반도체의 기상 성장 방법, Al계Ⅲ-Ⅴ족 화합물 반도체의 제조 방법 및 제조 장치 Download PDFInfo
- Publication number
- KR100693078B1 KR100693078B1 KR1020047016182A KR20047016182A KR100693078B1 KR 100693078 B1 KR100693078 B1 KR 100693078B1 KR 1020047016182 A KR1020047016182 A KR 1020047016182A KR 20047016182 A KR20047016182 A KR 20047016182A KR 100693078 B1 KR100693078 B1 KR 100693078B1
- Authority
- KR
- South Korea
- Prior art keywords
- compound semiconductor
- group iii
- hydrogen
- halide
- gas
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 72
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 150000001875 compounds Chemical class 0.000 title claims abstract description 55
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 87
- 239000010453 quartz Substances 0.000 claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910000039 hydrogen halide Inorganic materials 0.000 claims abstract description 35
- 239000012433 hydrogen halide Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 238000000927 vapour-phase epitaxy Methods 0.000 claims abstract description 8
- 238000000407 epitaxy Methods 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims description 43
- 150000004820 halides Chemical class 0.000 claims description 37
- 239000012159 carrier gas Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 19
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 18
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 18
- 239000011261 inert gas Substances 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 238000005755 formation reaction Methods 0.000 claims description 6
- 239000008247 solid mixture Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 4
- 229910000043 hydrogen iodide Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 230000026030 halogenation Effects 0.000 claims 1
- 238000005658 halogenation reaction Methods 0.000 claims 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 abstract description 62
- 230000007613 environmental effect Effects 0.000 abstract description 8
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 abstract description 7
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 30
- 239000010408 film Substances 0.000 description 16
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 10
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000004943 liquid phase epitaxy Methods 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IZMHKHHRLNWLMK-UHFFFAOYSA-M chloridoaluminium Chemical compound Cl[Al] IZMHKHHRLNWLMK-UHFFFAOYSA-M 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012932 thermodynamic analysis Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (11)
- III족으로서 Al를 포함하는 III-V족 화합물 반도체를, 기상 에피택시법으로 결정 성장시키는 방법에 있어서, 고체 Al과 할로겐화수소를 650℃ 이하의 온도에서 반응시켜, Al의 할로겐화물을 생성하는 공정을 갖는 것을 특징으로 하는 Al계 III-V족 화합물 반도체의 기상 성장 방법.
- III족으로서 Al을 포함하는 III-V족 화합물 반도체를, 기상 에피택시법으로 결정 성장시키는 방법에 있어서, Al을 포함하는 III족 금속의 고체 혼합물과 할로겐화수소를, 650℃ 이하의 온도에서 반응시켜, Al의 할로겐화물 및 Al 이외의 III족 금속의 할로겐화물을 생성하는 공정을 갖는 것을 특징으로 하는 Al계 III-V족 화합물 반도체의 기상 성장 방법.
- 제1항 또는 제2항에 있어서, 할로겐화수소가 염화수소 혹은 브롬화수소 혹은 요오드화수소인 Al계 III-V족 화합물 반도체의 기상 성장 방법.
- 기상 에피택시법에 의한 기상 에피택셜 성장을 반복하여, III족으로서 Al을 포함하는 조성이 상이한 III-V족 화합물 반도체를 적층한 III-V족 화합물 반도체를 제조하는 방법에 있어서, 고체 Al과 할로겐화수소를 700℃이하의 온도에서 반응시켜, Al의 할로겐화물을 생성하는 제1 공정과, 제1 공정에서 생성한 Al의 할로겐화 물 및 V족을 함유하는 가스를, 70O℃이상의 온도로 기판 결정면에서 반응시킴으로써, III-V족 화합물 반도체를 상기 기판 결정상에 기상 성장하는 제2 공정을 갖고,제1 공정에 이용하는 할로겐화수소의 양, 제1 공정에 이용하는 할로겐화수소의 캐리어 가스의 양 및 제2 공정에 이용하는 V족을 함유하는 가스의 양 중 하나 이상의 양을 변화시켜, 조성이 상이한 III-V족 화합물 반도체를 적층하는 것을 특징으로 하는 Al계 III-V족 화합물 반도체의 제조 방법.
- 기상 에피택시법에 의한 기상 에피택셜 성장을 반복하여, III족으로서 Al을 포함하는 조성이 상이한 III-V족 화합물 반도체를 적층한 III-V족 화합물 반도체를 제조하는 방법에 있어서, Al을 포함하는 III족 금속의 고체 혼합물과 할로겐화수소를 700℃이하의 온도에서 반응시켜, Al의 할로겐화물을 생성하는 제1 공정과, 제1 공정에서 생성한 Al의 할로겐화물 및 Al이외의 III족 금속의 할로겐화물 및 V족을 함유하는 가스를 700℃이상의 온도로 기판 결정면에서 반응시킴으로써, III-V족 화합물 반도체를 상기 기판 결정상에 기상 성장하는 제2 공정을 갖고,제1 공정에 이용하는 할로겐화수소의 양, 제1 공정에 이용하는 할로겐화수소의 캐리어 가스의 양 및 제2 공정에 이용하는 V족을 함유하는 가스의 양 중 하나 이상의 양을 변화시켜, 조성이 상이한 III-V족 화합물 반도체를 적층하는 것을 특징으로 하는 Al계 III-V족 화합물 반도체의 제조 방법.
- 제4항 또는 제5항에 있어서, 할로겐화수소가 염화수소 혹은 브롬화수소 혹은 요오드화수소이고, 할로겐화수소의 캐리어 가스가 수소 혹은 불활성 가스, 혹은 할로겐화수소의 캐리어 가스가 수소와 불활성 가스의 혼합가스인 Al계 III-V족 화합물 반도체의 제조 방법.
- III족으로서 Al을 포함하는 III-V족 화합물 반도체를, 하이드라이드 기상 에피택시법으로 결정 성장시키는 장치에 있어서, 700℃이하의 온도로 유지된 제1 반응존과, 700℃ 내지 1300℃의 온도로 유지된 제2 반응존을 갖는 것을 특징으로 하는 Al계 III-V족 화합물 반도체의 제조장치.
- 제7항에 있어서, 제1 반응존에 고체 Al 혹은 Al을 포함하는 III족 금속의 고체 혼합물의 유지 수단과, 할로겐화수소의 도입 수단과, 할로겐화수소의 캐리어 가스의 도입 수단이 구비되고, 제2 반응존에 종결정(種結晶) 기판의 유지 수단과, 제1 반응존에서 생성한 할로겐화물의 도입 수단과, V족을 함유하는 가스의 도입 수단이 구비된 Al계 III-V족 화합물 반도체의 제조 장치.
- 제7항 또는 제8항에 있어서, 제1 반응존에서의 반응이 고체 Al의 할로겐화물 생성 반응 혹은 Al를 포함하는 III족 금속의 고체 혼합물의 할로겐화물 생성 반응이고, 제2 반응존에서의 반응이 종결정 기판 상의 III-V족 화합물 반도체의 기상 에피택셜 성장 반응인 Al계 III-V족 화합물 반도체의 제조 장치.
- 제8항에 있어서, 제1 반응존과 제2 반응존이 단독의 석영 반응관의 내부에 인접하여 배치되고, 석영 반응관의 제1 반응존 위치에 제1 가열 수단, 석영 반응관의 제2 반응존 위치에 제2 가열 수단이 배설되며, 제1 반응존에서 생성한 할로겐화물이 제1 반응존에 도입되는 가스의 가스류로 제2 반응존에 도입되는 것을 특징으로 하는 Al계 III-V족 화합물 반도체의 제조 장치.
- 제8항 또는 제10항에 있어서, 할로겐화수소가 염화수소 혹은 브롬화수소 혹은 요오드화수소이고, 할로겐화수소의 캐리어 가스가 수소 혹은 불활성 가스, 혹은 할로겐화수소의 캐리어 가스가 수소와 불활성 가스의 혼합 가스인 Al계 III-V족 화합물 반도체의 제조 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002106102A JP3803788B2 (ja) | 2002-04-09 | 2002-04-09 | Al系III−V族化合物半導体の気相成長方法、Al系III−V族化合物半導体の製造方法ならびに製造装置 |
JPJP-P-2002-00106102 | 2002-04-09 | ||
PCT/JP2003/004408 WO2003085711A1 (fr) | 2002-04-09 | 2003-04-07 | Procede de croissance en phase vapeur pour semiconducteur a composes iii-v contenant de l'al, et procede et dispositif destines a la production d'un semiconducteur a composes iii-v contenant de l'al |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040101432A KR20040101432A (ko) | 2004-12-02 |
KR100693078B1 true KR100693078B1 (ko) | 2007-03-12 |
Family
ID=28786410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047016182A KR100693078B1 (ko) | 2002-04-09 | 2003-04-07 | Al계 Ⅲ-Ⅴ족 화합물 반도체의 기상 성장 방법, Al계Ⅲ-Ⅴ족 화합물 반도체의 제조 방법 및 제조 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7645340B2 (ko) |
EP (1) | EP1494269A4 (ko) |
JP (1) | JP3803788B2 (ko) |
KR (1) | KR100693078B1 (ko) |
CN (1) | CN100345255C (ko) |
AU (1) | AU2003236306A1 (ko) |
WO (1) | WO2003085711A1 (ko) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4747350B2 (ja) * | 2004-02-05 | 2011-08-17 | 農工大ティー・エル・オー株式会社 | エピタキシャル層の気相成長装置 |
JP4765025B2 (ja) * | 2004-02-05 | 2011-09-07 | 農工大ティー・エル・オー株式会社 | AlNエピタキシャル層の成長方法及び気相成長装置 |
JP4513421B2 (ja) * | 2004-05-31 | 2010-07-28 | 住友電気工業株式会社 | AlxGayIn1−x−yN結晶の製造方法 |
JP2006073578A (ja) * | 2004-08-31 | 2006-03-16 | Nokodai Tlo Kk | AlGaNの気相成長方法及び気相成長装置 |
JP2006114845A (ja) * | 2004-10-18 | 2006-04-27 | Tokyo Univ Of Agriculture & Technology | アルミニウム系iii族窒化物の製造方法 |
JP2006290662A (ja) * | 2005-04-08 | 2006-10-26 | Tokyo Univ Of Agriculture & Technology | アルミニウム系iii族窒化物結晶の製造方法並びに製造装置 |
JP4476174B2 (ja) * | 2005-06-02 | 2010-06-09 | 国立大学法人東京農工大学 | アルミニウム系iii族窒化物結晶の製造方法および結晶積層基板 |
JP4749792B2 (ja) * | 2005-08-03 | 2011-08-17 | 国立大学法人東京農工大学 | アルミニウム系iii族窒化物結晶の製造方法および結晶積層基板 |
JP4872075B2 (ja) * | 2005-08-26 | 2012-02-08 | 国立大学法人三重大学 | Iii族窒化物結晶の作製装置およびiii族窒化物結晶の作製方法 |
JP4817042B2 (ja) * | 2005-08-26 | 2011-11-16 | 国立大学法人三重大学 | Alを含むIII族窒化物結晶の作製方法、およびAlを含むIII族窒化物結晶 |
US8728234B2 (en) | 2008-06-04 | 2014-05-20 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
US8764903B2 (en) * | 2009-05-05 | 2014-07-01 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
JP2009536605A (ja) * | 2006-05-08 | 2009-10-15 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | アルミニウムを含むiii族窒化物半導体化合物の成長方法及び材料。 |
WO2007148615A1 (ja) * | 2006-06-20 | 2007-12-27 | Sumitomo Electric Industries, Ltd. | AlxGa1-xN結晶の成長方法およびAlxGa1-xN結晶基板 |
JP4936277B2 (ja) * | 2006-07-13 | 2012-05-23 | 国立大学法人東京農工大学 | アルミニウム系iii族窒化物結晶の製造方法 |
JP4959468B2 (ja) * | 2006-09-08 | 2012-06-20 | 株式会社トクヤマ | Iii族窒化物の製造方法およびその装置 |
WO2008029589A1 (fr) | 2006-09-08 | 2008-03-13 | Tokuyama Corporation | Procédé et matériel servant à produire un nitrure d'un élément du groupe iii |
US8129208B2 (en) | 2007-02-07 | 2012-03-06 | Tokuyama Corporation | n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof |
DE102007009412A1 (de) * | 2007-02-23 | 2008-08-28 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung von (Al,Ga)N Kristallen |
DE102007009839A1 (de) * | 2007-02-23 | 2008-08-28 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung von (Al,Ga)InN-Kristallen |
WO2008101626A1 (de) * | 2007-02-23 | 2008-08-28 | Freiberger Compound Materials Gmbh | Verfahren zur herstellung von (al, ga)inn-kristallen |
CA2678488C (en) | 2007-03-02 | 2012-07-10 | National University Corporation Tokyo University Of Agriculture And Technology | Method of producing a group iii nitride crystal |
JP5100231B2 (ja) * | 2007-07-25 | 2012-12-19 | 株式会社トクヤマ | Iii族窒化物製造装置 |
JP5324110B2 (ja) | 2008-01-16 | 2013-10-23 | 国立大学法人東京農工大学 | 積層体およびその製造方法 |
TWI487817B (zh) * | 2008-02-25 | 2015-06-11 | Sixpoint Materials Inc | 用於製造第iii族氮化物晶圓之方法及第iii族氮化物晶圓 |
WO2009149300A1 (en) * | 2008-06-04 | 2009-12-10 | Sixpoint Materials | High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal |
EP2286007B1 (en) | 2008-06-12 | 2018-04-04 | SixPoint Materials, Inc. | Method for testing gallium nitride wafers and method for producing gallium nitride wafers |
WO2010045567A1 (en) * | 2008-10-16 | 2010-04-22 | Sixpoint Materials, Inc. | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
KR100980642B1 (ko) | 2008-10-31 | 2010-09-07 | 주식회사 실트론 | 질화갈륨 기판제조장치 |
US8895107B2 (en) * | 2008-11-06 | 2014-11-25 | Veeco Instruments Inc. | Chemical vapor deposition with elevated temperature gas injection |
US8852341B2 (en) * | 2008-11-24 | 2014-10-07 | Sixpoint Materials, Inc. | Methods for producing GaN nutrient for ammonothermal growth |
CN102414797A (zh) * | 2009-04-29 | 2012-04-11 | 应用材料公司 | 在HVPE中形成原位预GaN沉积层的方法 |
US20110104843A1 (en) * | 2009-07-31 | 2011-05-05 | Applied Materials, Inc. | Method of reducing degradation of multi quantum well (mqw) light emitting diodes |
JP5859978B2 (ja) * | 2010-12-15 | 2016-02-16 | 株式会社トクヤマ | アルミニウム系iii族窒化物単結晶の製造方法 |
JP5550579B2 (ja) * | 2011-02-10 | 2014-07-16 | 株式会社トクヤマ | 三塩化アルミニウムガスの製造方法 |
JP2013058741A (ja) * | 2011-08-17 | 2013-03-28 | Hitachi Cable Ltd | 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート |
WO2014200001A1 (ja) | 2013-06-10 | 2014-12-18 | 株式会社トクヤマ | アルミニウム系iii族窒化物単結晶の製造方法 |
JP6091346B2 (ja) * | 2013-06-11 | 2017-03-08 | 株式会社トクヤマ | アルミニウム系iii族窒化物単結晶の製造方法 |
JP5818853B2 (ja) | 2013-10-15 | 2015-11-18 | 株式会社トクヤマ | n型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス |
EP3193356B1 (en) | 2014-09-11 | 2023-12-20 | Tokuyama Corporation | Cleaning method and laminate of aluminum nitride single-crystal substrate |
TWI717777B (zh) | 2014-11-10 | 2021-02-01 | 日商德山股份有限公司 | Iii族氮化物單結晶製造裝置、使用該裝置之iii族氮化物單結晶之製造方法、及氮化鋁單結晶 |
DE102015205104A1 (de) * | 2015-03-20 | 2016-09-22 | Freiberger Compound Materials Gmbh | Züchtung von A-B Kristallen ohne Kristallgitter-Krümmung |
JP6499917B2 (ja) * | 2015-05-18 | 2019-04-10 | 株式会社トクヤマ | Iii族窒化物単結晶の製造方法 |
US10822718B2 (en) | 2016-03-23 | 2020-11-03 | Tokuyama Corporation | Method for producing aluminum nitride single crystal substrate |
CN106430269B (zh) * | 2016-10-20 | 2018-03-02 | 安庆市长虹化工有限公司 | 一种溴化铝的制备方法 |
EP3959349A1 (en) * | 2019-04-25 | 2022-03-02 | Aledia | Deposition process using additional chloride-based precursors |
JP7228467B2 (ja) * | 2019-05-27 | 2023-02-24 | 信越化学工業株式会社 | Iii族化合物基板の製造方法及びiii族化合物基板 |
CN116568875A (zh) | 2021-08-23 | 2023-08-08 | 株式会社德山 | Iii族氮化物单晶基板的清洗方法及制造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3471324A (en) * | 1966-12-23 | 1969-10-07 | Texas Instruments Inc | Epitaxial gallium arsenide |
US4698244A (en) * | 1985-10-31 | 1987-10-06 | Air Products And Chemicals, Inc. | Deposition of titanium aluminides |
JPH0760800B2 (ja) | 1986-09-17 | 1995-06-28 | 住友化学工業株式会社 | 化合物半導体の気相成長法 |
US4888303A (en) * | 1988-11-09 | 1989-12-19 | The United States Of America As Represented By The Secretary Of The Air Force | Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers |
JPH03218917A (ja) | 1989-10-19 | 1991-09-26 | Hashimoto Kasei Kogyo Kk | 三塩化ホウ素の製造方法 |
JP3327952B2 (ja) | 1991-07-17 | 2002-09-24 | 旭化成株式会社 | 圧電体とそれを用いたsawデバイス |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
JP2873991B2 (ja) | 1994-12-02 | 1999-03-24 | 光技術研究開発株式会社 | Al系化合物半導体の結晶成長方法 |
US6533874B1 (en) * | 1996-12-03 | 2003-03-18 | Advanced Technology Materials, Inc. | GaN-based devices using thick (Ga, Al, In)N base layers |
JPH111399A (ja) * | 1996-12-05 | 1999-01-06 | Lg Electron Inc | 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード |
JP3946805B2 (ja) | 1997-01-30 | 2007-07-18 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
JP3899652B2 (ja) | 1997-03-14 | 2007-03-28 | 住友電気工業株式会社 | エピタキシャルウェハ |
US6197683B1 (en) * | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
US6599133B2 (en) * | 1997-11-18 | 2003-07-29 | Technologies And Devices International, Inc. | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
US6218269B1 (en) * | 1997-11-18 | 2001-04-17 | Technology And Devices International, Inc. | Process for producing III-V nitride pn junctions and p-i-n junctions |
JP2000031060A (ja) | 1998-07-10 | 2000-01-28 | Hitachi Cable Ltd | Iii−v族化合物半導体気相エピタキシャル成長方法及び成長装置 |
JP3279528B2 (ja) | 1998-09-07 | 2002-04-30 | 日本電気株式会社 | 窒化物系iii−v族化合物半導体の製造方法 |
JP3171180B2 (ja) | 1999-02-04 | 2001-05-28 | 日本電気株式会社 | 気相エピタキシャル成長法、半導体基板の製造方法、半導体基板及びハイドライド気相エピタキシー装置 |
WO2000068470A1 (en) | 1999-05-07 | 2000-11-16 | Cbl Technologies, Inc. | Magnesium-doped iii-v nitrides & methods |
US6410172B1 (en) | 1999-11-23 | 2002-06-25 | Advanced Ceramics Corporation | Articles coated with aluminum nitride by chemical vapor deposition |
JP3553583B2 (ja) | 1999-12-22 | 2004-08-11 | 日本電気株式会社 | 窒化物の気相成長装置 |
JP4374156B2 (ja) | 2000-09-01 | 2009-12-02 | 日本碍子株式会社 | Iii−v族窒化物膜の製造装置及び製造方法 |
JP2001313254A (ja) | 2001-04-12 | 2001-11-09 | Sony Corp | 窒化物系iii−v族化合物半導体層の成長方法 |
JP4212426B2 (ja) | 2003-08-07 | 2009-01-21 | 豊田合成株式会社 | Iii族窒化物系化合物半導体基板の製造方法 |
JP2005223243A (ja) | 2004-02-09 | 2005-08-18 | Hitachi Cable Ltd | Iii族窒化物系半導体結晶の製造方法及びハイドライド気相成長装置 |
-
2002
- 2002-04-09 JP JP2002106102A patent/JP3803788B2/ja not_active Expired - Lifetime
-
2003
- 2003-04-07 WO PCT/JP2003/004408 patent/WO2003085711A1/ja active Application Filing
- 2003-04-07 AU AU2003236306A patent/AU2003236306A1/en not_active Abandoned
- 2003-04-07 EP EP03745948A patent/EP1494269A4/en not_active Ceased
- 2003-04-07 US US10/509,177 patent/US7645340B2/en not_active Expired - Lifetime
- 2003-04-07 KR KR1020047016182A patent/KR100693078B1/ko active IP Right Grant
- 2003-04-07 CN CNB038080028A patent/CN100345255C/zh not_active Expired - Lifetime
Non-Patent Citations (2)
Title |
---|
1020047016182 - 688369 * |
1020047016182 - 688373 * |
Also Published As
Publication number | Publication date |
---|---|
CN1647251A (zh) | 2005-07-27 |
EP1494269A4 (en) | 2007-10-10 |
WO2003085711A1 (fr) | 2003-10-16 |
CN100345255C (zh) | 2007-10-24 |
US20050166835A1 (en) | 2005-08-04 |
AU2003236306A1 (en) | 2003-10-20 |
US7645340B2 (en) | 2010-01-12 |
JP2003303774A (ja) | 2003-10-24 |
EP1494269A1 (en) | 2005-01-05 |
JP3803788B2 (ja) | 2006-08-02 |
KR20040101432A (ko) | 2004-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100693078B1 (ko) | Al계 Ⅲ-Ⅴ족 화합물 반도체의 기상 성장 방법, Al계Ⅲ-Ⅴ족 화합물 반도체의 제조 방법 및 제조 장치 | |
US6406540B1 (en) | Process and apparatus for the growth of nitride materials | |
US4404265A (en) | Epitaxial composite and method of making | |
US4147571A (en) | Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system | |
US6632725B2 (en) | Process for producing an epitaxial layer of gallium nitride by the HVPE method | |
US4368098A (en) | Epitaxial composite and method of making | |
US6350666B2 (en) | Method and apparatus for producing group-III nitrides | |
US20080083970A1 (en) | Method and materials for growing III-nitride semiconductor compounds containing aluminum | |
EP1796150B1 (en) | Method for algan vapor-phase growth | |
JP3879173B2 (ja) | 化合物半導体気相成長方法 | |
US9281180B2 (en) | Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal | |
US8728233B2 (en) | Method for the production of group III nitride bulk crystals or crystal layers from fused metals | |
US20070215982A1 (en) | Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Forming Gallium Nitride | |
US20080203408A1 (en) | PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALS | |
US4888303A (en) | Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers | |
JPH0760800B2 (ja) | 化合物半導体の気相成長法 | |
Cheng et al. | Material Technologies | |
JPH01103982A (ja) | 3−5族化合物半導体単結晶の製造方法 | |
JP2022550455A (ja) | 外部AlCl3発生器を使用する水素化物気相エピタキシーによるAlxGa1-xAs、Al0.5In0.5PおよびAlxGa(0.5-x)In0.5Pの成長 | |
JPH0369879B2 (ko) | ||
KR20090083600A (ko) | 인듐을 이용한 저온에서의 나노 구조체 제조방법 | |
KR19990032082A (ko) | GaN 단결정 제조방법 | |
JPH01141899A (ja) | 3−5族化合物半導体の気相成長方法 | |
Mastro | Growth and characterization of thin and thick gallium nitride | |
Boney | Growth of gallium nitride, aluminum nitride, and aluminum gallium nitride by sublimation vapor phase epitaxy |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130110 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20131205 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20141203 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151204 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170207 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20181218 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20191218 Year of fee payment: 14 |