KR100683585B1 - 산화물 소결체 - Google Patents

산화물 소결체 Download PDF

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Publication number
KR100683585B1
KR100683585B1 KR1020030031813A KR20030031813A KR100683585B1 KR 100683585 B1 KR100683585 B1 KR 100683585B1 KR 1020030031813 A KR1020030031813 A KR 1020030031813A KR 20030031813 A KR20030031813 A KR 20030031813A KR 100683585 B1 KR100683585 B1 KR 100683585B1
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KR
South Korea
Prior art keywords
oxide
oxide sintered
sintered body
indium
tungsten
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Expired - Fee Related
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KR1020030031813A
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English (en)
Korean (ko)
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KR20040019865A (ko
Inventor
아베요시유키
Original Assignee
스미토모 긴조쿠 고잔 가부시키가이샤
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Publication of KR20040019865A publication Critical patent/KR20040019865A/ko
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Publication of KR100683585B1 publication Critical patent/KR100683585B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/661—Multi-step sintering
    • C04B2235/662—Annealing after sintering
    • C04B2235/664—Reductive annealing
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
KR1020030031813A 2002-08-30 2003-05-20 산화물 소결체 Expired - Fee Related KR100683585B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00255425 2002-08-30
JP2002255425A JP3906766B2 (ja) 2002-08-30 2002-08-30 酸化物焼結体

Publications (2)

Publication Number Publication Date
KR20040019865A KR20040019865A (ko) 2004-03-06
KR100683585B1 true KR100683585B1 (ko) 2007-02-15

Family

ID=31972885

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030031813A Expired - Fee Related KR100683585B1 (ko) 2002-08-30 2003-05-20 산화물 소결체

Country Status (5)

Country Link
US (2) US7011691B2 (enExample)
JP (1) JP3906766B2 (enExample)
KR (1) KR100683585B1 (enExample)
CN (1) CN1326154C (enExample)
TW (1) TWI241982B (enExample)

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TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
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JP2005306662A (ja) * 2004-04-21 2005-11-04 Tdk Corp 誘電体セラミックス粉末の製造方法及び複合誘電体材料の製造方法
JP4826066B2 (ja) * 2004-04-27 2011-11-30 住友金属鉱山株式会社 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法
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KR100961421B1 (ko) * 2005-03-25 2010-06-09 아사히 가라스 가부시키가이샤 전기 전도성 재료
ITTO20050269A1 (it) * 2005-04-21 2006-10-22 Sales Spa Dispositivo di apertura per contenitori flessibili ermetici
US8999836B2 (en) 2005-05-13 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7862910B2 (en) 2006-04-11 2011-01-04 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US7452488B2 (en) * 2006-10-31 2008-11-18 H.C. Starck Inc. Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
US7820296B2 (en) * 2007-09-14 2010-10-26 Cardinal Cg Company Low-maintenance coating technology
JP5604888B2 (ja) * 2009-12-21 2014-10-15 住友大阪セメント株式会社 静電チャックの製造方法
EP2671855B1 (en) * 2011-02-04 2016-05-25 Sumitomo Metal Mining Co., Ltd. Oxide sintered body and tablets obtained by processing same
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SG11201509031RA (en) * 2013-05-02 2015-11-27 Basf Se Polyarylethersulfone copolymers
JP5967016B2 (ja) * 2013-05-29 2016-08-10 住友金属鉱山株式会社 蒸着用タブレットとその製造方法
JP6044503B2 (ja) * 2013-10-08 2016-12-14 住友金属鉱山株式会社 導電性接着フィルム及びそれを用いた多接合型太陽電池
KR20150105527A (ko) 2014-03-06 2015-09-17 삼성디스플레이 주식회사 산화물 스퍼터링 타겟 및 이를 이용한 박막 트랜지스터
JP6119773B2 (ja) * 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6233447B2 (ja) * 2014-03-25 2017-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
CN105745183B (zh) 2014-08-12 2018-03-13 住友电气工业株式会社 氧化物烧结体及其制造方法、溅射靶、以及半导体器件
EP3061735A4 (en) * 2014-10-22 2016-12-14 Sumitomo Electric Industries SINTERED OXID AND SEMICONDUCTOR ELEMENT
US10475631B2 (en) 2015-02-13 2019-11-12 Sumitomo Electric Industries, Ltd. Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device
CN105374901A (zh) * 2015-11-18 2016-03-02 南京迪纳科光电材料有限公司 用于薄膜太阳能电池透明电极的iwo材料的制备方法
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JP6493501B2 (ja) * 2017-12-05 2019-04-03 住友電気工業株式会社 酸化物焼結体の製造方法
CN111943650B (zh) * 2020-07-22 2022-11-29 长沙壹纳光电材料有限公司 一种用于活化等离子沉积技术的iwo靶材及其制备方法
CN113548872A (zh) * 2021-07-16 2021-10-26 长沙壹纳光电材料有限公司 一种iwo靶材及其制备方法与应用
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Also Published As

Publication number Publication date
CN1326154C (zh) 2007-07-11
TW200403189A (en) 2004-03-01
CN1479321A (zh) 2004-03-03
JP2004091265A (ja) 2004-03-25
US7011691B2 (en) 2006-03-14
US20040040414A1 (en) 2004-03-04
US7569167B2 (en) 2009-08-04
US20060099140A1 (en) 2006-05-11
JP3906766B2 (ja) 2007-04-18
TWI241982B (en) 2005-10-21
KR20040019865A (ko) 2004-03-06

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