CN1326154C - 氧化物烧结体 - Google Patents
氧化物烧结体 Download PDFInfo
- Publication number
- CN1326154C CN1326154C CNB031476880A CN03147688A CN1326154C CN 1326154 C CN1326154 C CN 1326154C CN B031476880 A CNB031476880 A CN B031476880A CN 03147688 A CN03147688 A CN 03147688A CN 1326154 C CN1326154 C CN 1326154C
- Authority
- CN
- China
- Prior art keywords
- sintered body
- oxidate sintered
- resistivity
- oxide
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005477 sputtering target Methods 0.000 claims abstract description 49
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 27
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 23
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010937 tungsten Substances 0.000 claims abstract description 21
- 239000006104 solid solution Substances 0.000 claims abstract description 13
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000007733 ion plating Methods 0.000 claims description 26
- 239000002253 acid Substances 0.000 claims description 17
- 150000002472 indium compounds Chemical class 0.000 claims description 17
- 229910052718 tin Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract description 13
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- -1 indium tungstate compound Chemical class 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 62
- 230000008021 deposition Effects 0.000 description 56
- 239000010408 film Substances 0.000 description 55
- 238000004544 sputter deposition Methods 0.000 description 42
- 238000000137 annealing Methods 0.000 description 38
- 239000011248 coating agent Substances 0.000 description 36
- 238000000576 coating method Methods 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 239000000523 sample Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 238000000634 powder X-ray diffraction Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 208000031872 Body Remains Diseases 0.000 description 4
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- XJVBHCCEUWWHMI-UHFFFAOYSA-N argon(.1+) Chemical compound [Ar+] XJVBHCCEUWWHMI-UHFFFAOYSA-N 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/664—Reductive annealing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP255425/2002 | 2002-08-30 | ||
| JP2002255425A JP3906766B2 (ja) | 2002-08-30 | 2002-08-30 | 酸化物焼結体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1479321A CN1479321A (zh) | 2004-03-03 |
| CN1326154C true CN1326154C (zh) | 2007-07-11 |
Family
ID=31972885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031476880A Expired - Lifetime CN1326154C (zh) | 2002-08-30 | 2003-05-20 | 氧化物烧结体 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7011691B2 (enExample) |
| JP (1) | JP3906766B2 (enExample) |
| KR (1) | KR100683585B1 (enExample) |
| CN (1) | CN1326154C (enExample) |
| TW (1) | TWI241982B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105374901A (zh) * | 2015-11-18 | 2016-03-02 | 南京迪纳科光电材料有限公司 | 用于薄膜太阳能电池透明电极的iwo材料的制备方法 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI254080B (en) * | 2002-03-27 | 2006-05-01 | Sumitomo Metal Mining Co | Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device |
| JP3797317B2 (ja) * | 2002-05-30 | 2006-07-19 | 住友金属鉱山株式会社 | 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子 |
| JP2005306662A (ja) * | 2004-04-21 | 2005-11-04 | Tdk Corp | 誘電体セラミックス粉末の製造方法及び複合誘電体材料の製造方法 |
| JP4826066B2 (ja) * | 2004-04-27 | 2011-11-30 | 住友金属鉱山株式会社 | 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法 |
| CA2570369C (en) | 2004-07-12 | 2008-02-19 | Cardinal Cg Company | Low-maintenance coatings |
| JP4182357B2 (ja) * | 2005-01-17 | 2008-11-19 | 住友金属鉱山株式会社 | 熱線遮蔽樹脂シート材および熱線遮蔽樹脂シート材積層体、並びにそれらを用いた建築構造体 |
| KR100961421B1 (ko) * | 2005-03-25 | 2010-06-09 | 아사히 가라스 가부시키가이샤 | 전기 전도성 재료 |
| ITTO20050269A1 (it) * | 2005-04-21 | 2006-10-22 | Sales Spa | Dispositivo di apertura per contenitori flessibili ermetici |
| US8999836B2 (en) | 2005-05-13 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US7862910B2 (en) | 2006-04-11 | 2011-01-04 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
| US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
| US7452488B2 (en) * | 2006-10-31 | 2008-11-18 | H.C. Starck Inc. | Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein |
| US7820296B2 (en) * | 2007-09-14 | 2010-10-26 | Cardinal Cg Company | Low-maintenance coating technology |
| JP5604888B2 (ja) * | 2009-12-21 | 2014-10-15 | 住友大阪セメント株式会社 | 静電チャックの製造方法 |
| EP2671855B1 (en) * | 2011-02-04 | 2016-05-25 | Sumitomo Metal Mining Co., Ltd. | Oxide sintered body and tablets obtained by processing same |
| CN102751341A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 透明导电薄膜及其制备方法 |
| SG11201509031RA (en) * | 2013-05-02 | 2015-11-27 | Basf Se | Polyarylethersulfone copolymers |
| JP5967016B2 (ja) * | 2013-05-29 | 2016-08-10 | 住友金属鉱山株式会社 | 蒸着用タブレットとその製造方法 |
| JP6044503B2 (ja) * | 2013-10-08 | 2016-12-14 | 住友金属鉱山株式会社 | 導電性接着フィルム及びそれを用いた多接合型太陽電池 |
| KR20150105527A (ko) | 2014-03-06 | 2015-09-17 | 삼성디스플레이 주식회사 | 산화물 스퍼터링 타겟 및 이를 이용한 박막 트랜지스터 |
| JP6119773B2 (ja) * | 2014-03-25 | 2017-04-26 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス |
| JP6233447B2 (ja) * | 2014-03-25 | 2017-11-22 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス |
| CN105745183B (zh) | 2014-08-12 | 2018-03-13 | 住友电气工业株式会社 | 氧化物烧结体及其制造方法、溅射靶、以及半导体器件 |
| EP3061735A4 (en) * | 2014-10-22 | 2016-12-14 | Sumitomo Electric Industries | SINTERED OXID AND SEMICONDUCTOR ELEMENT |
| US10475631B2 (en) | 2015-02-13 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device |
| WO2018093985A1 (en) | 2016-11-17 | 2018-05-24 | Cardinal Cg Company | Static-dissipative coating technology |
| GB2562115B (en) | 2017-05-05 | 2022-02-16 | William Blythe Ltd | Tungsten oxide |
| GB2562116B (en) | 2017-05-05 | 2022-04-27 | William Blythe Ltd | Metal oxide, composition comprising the same and method of making metal oxide |
| JP6493501B2 (ja) * | 2017-12-05 | 2019-04-03 | 住友電気工業株式会社 | 酸化物焼結体の製造方法 |
| CN111943650B (zh) * | 2020-07-22 | 2022-11-29 | 长沙壹纳光电材料有限公司 | 一种用于活化等离子沉积技术的iwo靶材及其制备方法 |
| CN113548872A (zh) * | 2021-07-16 | 2021-10-26 | 长沙壹纳光电材料有限公司 | 一种iwo靶材及其制备方法与应用 |
| CN114702304B (zh) * | 2022-05-11 | 2023-03-17 | 郑州大学 | 一种铟钨氧化物靶材及其制备方法 |
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- 2003-05-20 US US10/441,980 patent/US7011691B2/en not_active Expired - Lifetime
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| CN1267061A (zh) * | 2000-04-11 | 2000-09-20 | 复旦大学 | 一种透明导电薄膜及其制备方法 |
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| CN105374901A (zh) * | 2015-11-18 | 2016-03-02 | 南京迪纳科光电材料有限公司 | 用于薄膜太阳能电池透明电极的iwo材料的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200403189A (en) | 2004-03-01 |
| CN1479321A (zh) | 2004-03-03 |
| JP2004091265A (ja) | 2004-03-25 |
| US7011691B2 (en) | 2006-03-14 |
| US20040040414A1 (en) | 2004-03-04 |
| US7569167B2 (en) | 2009-08-04 |
| US20060099140A1 (en) | 2006-05-11 |
| JP3906766B2 (ja) | 2007-04-18 |
| KR100683585B1 (ko) | 2007-02-15 |
| TWI241982B (en) | 2005-10-21 |
| KR20040019865A (ko) | 2004-03-06 |
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