JP3906766B2 - 酸化物焼結体 - Google Patents

酸化物焼結体 Download PDF

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Publication number
JP3906766B2
JP3906766B2 JP2002255425A JP2002255425A JP3906766B2 JP 3906766 B2 JP3906766 B2 JP 3906766B2 JP 2002255425 A JP2002255425 A JP 2002255425A JP 2002255425 A JP2002255425 A JP 2002255425A JP 3906766 B2 JP3906766 B2 JP 3906766B2
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JP
Japan
Prior art keywords
sintered body
oxide
oxide sintered
tungsten
specific resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002255425A
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English (en)
Japanese (ja)
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JP2004091265A5 (enExample
JP2004091265A (ja
Inventor
能之 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP2002255425A priority Critical patent/JP3906766B2/ja
Priority to TW092113424A priority patent/TWI241982B/zh
Priority to US10/441,980 priority patent/US7011691B2/en
Priority to CNB031476880A priority patent/CN1326154C/zh
Priority to KR1020030031813A priority patent/KR100683585B1/ko
Publication of JP2004091265A publication Critical patent/JP2004091265A/ja
Priority to US11/301,205 priority patent/US7569167B2/en
Publication of JP2004091265A5 publication Critical patent/JP2004091265A5/ja
Application granted granted Critical
Publication of JP3906766B2 publication Critical patent/JP3906766B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/661—Multi-step sintering
    • C04B2235/662—Annealing after sintering
    • C04B2235/664—Reductive annealing
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
JP2002255425A 2002-08-30 2002-08-30 酸化物焼結体 Expired - Lifetime JP3906766B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002255425A JP3906766B2 (ja) 2002-08-30 2002-08-30 酸化物焼結体
TW092113424A TWI241982B (en) 2002-08-30 2003-05-19 Oxide sintered body
CNB031476880A CN1326154C (zh) 2002-08-30 2003-05-20 氧化物烧结体
KR1020030031813A KR100683585B1 (ko) 2002-08-30 2003-05-20 산화물 소결체
US10/441,980 US7011691B2 (en) 2002-08-30 2003-05-20 Oxide sintered body
US11/301,205 US7569167B2 (en) 2002-08-30 2005-12-12 Oxide sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002255425A JP3906766B2 (ja) 2002-08-30 2002-08-30 酸化物焼結体

Publications (3)

Publication Number Publication Date
JP2004091265A JP2004091265A (ja) 2004-03-25
JP2004091265A5 JP2004091265A5 (enExample) 2006-05-18
JP3906766B2 true JP3906766B2 (ja) 2007-04-18

Family

ID=31972885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002255425A Expired - Lifetime JP3906766B2 (ja) 2002-08-30 2002-08-30 酸化物焼結体

Country Status (5)

Country Link
US (2) US7011691B2 (enExample)
JP (1) JP3906766B2 (enExample)
KR (1) KR100683585B1 (enExample)
CN (1) CN1326154C (enExample)
TW (1) TWI241982B (enExample)

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TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
JP3797317B2 (ja) * 2002-05-30 2006-07-19 住友金属鉱山株式会社 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子
JP2005306662A (ja) * 2004-04-21 2005-11-04 Tdk Corp 誘電体セラミックス粉末の製造方法及び複合誘電体材料の製造方法
JP4826066B2 (ja) * 2004-04-27 2011-11-30 住友金属鉱山株式会社 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法
CA2570369C (en) 2004-07-12 2008-02-19 Cardinal Cg Company Low-maintenance coatings
JP4182357B2 (ja) * 2005-01-17 2008-11-19 住友金属鉱山株式会社 熱線遮蔽樹脂シート材および熱線遮蔽樹脂シート材積層体、並びにそれらを用いた建築構造体
KR100961421B1 (ko) * 2005-03-25 2010-06-09 아사히 가라스 가부시키가이샤 전기 전도성 재료
ITTO20050269A1 (it) * 2005-04-21 2006-10-22 Sales Spa Dispositivo di apertura per contenitori flessibili ermetici
US8999836B2 (en) 2005-05-13 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7862910B2 (en) 2006-04-11 2011-01-04 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US7452488B2 (en) * 2006-10-31 2008-11-18 H.C. Starck Inc. Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
US7820296B2 (en) * 2007-09-14 2010-10-26 Cardinal Cg Company Low-maintenance coating technology
JP5604888B2 (ja) * 2009-12-21 2014-10-15 住友大阪セメント株式会社 静電チャックの製造方法
EP2671855B1 (en) * 2011-02-04 2016-05-25 Sumitomo Metal Mining Co., Ltd. Oxide sintered body and tablets obtained by processing same
CN102751341A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 透明导电薄膜及其制备方法
SG11201509031RA (en) * 2013-05-02 2015-11-27 Basf Se Polyarylethersulfone copolymers
JP5967016B2 (ja) * 2013-05-29 2016-08-10 住友金属鉱山株式会社 蒸着用タブレットとその製造方法
JP6044503B2 (ja) * 2013-10-08 2016-12-14 住友金属鉱山株式会社 導電性接着フィルム及びそれを用いた多接合型太陽電池
KR20150105527A (ko) 2014-03-06 2015-09-17 삼성디스플레이 주식회사 산화물 스퍼터링 타겟 및 이를 이용한 박막 트랜지스터
JP6119773B2 (ja) * 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6233447B2 (ja) * 2014-03-25 2017-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
CN105745183B (zh) 2014-08-12 2018-03-13 住友电气工业株式会社 氧化物烧结体及其制造方法、溅射靶、以及半导体器件
EP3061735A4 (en) * 2014-10-22 2016-12-14 Sumitomo Electric Industries SINTERED OXID AND SEMICONDUCTOR ELEMENT
US10475631B2 (en) 2015-02-13 2019-11-12 Sumitomo Electric Industries, Ltd. Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device
CN105374901A (zh) * 2015-11-18 2016-03-02 南京迪纳科光电材料有限公司 用于薄膜太阳能电池透明电极的iwo材料的制备方法
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GB2562116B (en) 2017-05-05 2022-04-27 William Blythe Ltd Metal oxide, composition comprising the same and method of making metal oxide
JP6493501B2 (ja) * 2017-12-05 2019-04-03 住友電気工業株式会社 酸化物焼結体の製造方法
CN111943650B (zh) * 2020-07-22 2022-11-29 长沙壹纳光电材料有限公司 一种用于活化等离子沉积技术的iwo靶材及其制备方法
CN113548872A (zh) * 2021-07-16 2021-10-26 长沙壹纳光电材料有限公司 一种iwo靶材及其制备方法与应用
CN114702304B (zh) * 2022-05-11 2023-03-17 郑州大学 一种铟钨氧化物靶材及其制备方法

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JP4647823B2 (ja) 2001-04-26 2011-03-09 旭化成エレクトロニクス株式会社 Ｇｍ−Ｃフィルタ

Also Published As

Publication number Publication date
CN1326154C (zh) 2007-07-11
TW200403189A (en) 2004-03-01
CN1479321A (zh) 2004-03-03
JP2004091265A (ja) 2004-03-25
US7011691B2 (en) 2006-03-14
US20040040414A1 (en) 2004-03-04
US7569167B2 (en) 2009-08-04
US20060099140A1 (en) 2006-05-11
KR100683585B1 (ko) 2007-02-15
TWI241982B (en) 2005-10-21
KR20040019865A (ko) 2004-03-06

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