JP2004091265A5 - - Google Patents

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Publication number
JP2004091265A5
JP2004091265A5 JP2002255425A JP2002255425A JP2004091265A5 JP 2004091265 A5 JP2004091265 A5 JP 2004091265A5 JP 2002255425 A JP2002255425 A JP 2002255425A JP 2002255425 A JP2002255425 A JP 2002255425A JP 2004091265 A5 JP2004091265 A5 JP 2004091265A5
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JP
Japan
Prior art keywords
sintered body
oxide sintered
less
body according
specific resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002255425A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004091265A (ja
JP3906766B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002255425A external-priority patent/JP3906766B2/ja
Priority to JP2002255425A priority Critical patent/JP3906766B2/ja
Priority to TW092113424A priority patent/TWI241982B/zh
Priority to US10/441,980 priority patent/US7011691B2/en
Priority to KR1020030031813A priority patent/KR100683585B1/ko
Priority to CNB031476880A priority patent/CN1326154C/zh
Publication of JP2004091265A publication Critical patent/JP2004091265A/ja
Priority to US11/301,205 priority patent/US7569167B2/en
Publication of JP2004091265A5 publication Critical patent/JP2004091265A5/ja
Publication of JP3906766B2 publication Critical patent/JP3906766B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002255425A 2002-08-30 2002-08-30 酸化物焼結体 Expired - Lifetime JP3906766B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002255425A JP3906766B2 (ja) 2002-08-30 2002-08-30 酸化物焼結体
TW092113424A TWI241982B (en) 2002-08-30 2003-05-19 Oxide sintered body
CNB031476880A CN1326154C (zh) 2002-08-30 2003-05-20 氧化物烧结体
KR1020030031813A KR100683585B1 (ko) 2002-08-30 2003-05-20 산화물 소결체
US10/441,980 US7011691B2 (en) 2002-08-30 2003-05-20 Oxide sintered body
US11/301,205 US7569167B2 (en) 2002-08-30 2005-12-12 Oxide sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002255425A JP3906766B2 (ja) 2002-08-30 2002-08-30 酸化物焼結体

Publications (3)

Publication Number Publication Date
JP2004091265A JP2004091265A (ja) 2004-03-25
JP2004091265A5 true JP2004091265A5 (enExample) 2006-05-18
JP3906766B2 JP3906766B2 (ja) 2007-04-18

Family

ID=31972885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002255425A Expired - Lifetime JP3906766B2 (ja) 2002-08-30 2002-08-30 酸化物焼結体

Country Status (5)

Country Link
US (2) US7011691B2 (enExample)
JP (1) JP3906766B2 (enExample)
KR (1) KR100683585B1 (enExample)
CN (1) CN1326154C (enExample)
TW (1) TWI241982B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
JP3797317B2 (ja) * 2002-05-30 2006-07-19 住友金属鉱山株式会社 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子
JP2005306662A (ja) * 2004-04-21 2005-11-04 Tdk Corp 誘電体セラミックス粉末の製造方法及び複合誘電体材料の製造方法
JP4826066B2 (ja) * 2004-04-27 2011-11-30 住友金属鉱山株式会社 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法
CA2570369C (en) 2004-07-12 2008-02-19 Cardinal Cg Company Low-maintenance coatings
JP4182357B2 (ja) * 2005-01-17 2008-11-19 住友金属鉱山株式会社 熱線遮蔽樹脂シート材および熱線遮蔽樹脂シート材積層体、並びにそれらを用いた建築構造体
KR100961421B1 (ko) * 2005-03-25 2010-06-09 아사히 가라스 가부시키가이샤 전기 전도성 재료
ITTO20050269A1 (it) * 2005-04-21 2006-10-22 Sales Spa Dispositivo di apertura per contenitori flessibili ermetici
US8999836B2 (en) 2005-05-13 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7862910B2 (en) 2006-04-11 2011-01-04 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US7452488B2 (en) * 2006-10-31 2008-11-18 H.C. Starck Inc. Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
US7820296B2 (en) * 2007-09-14 2010-10-26 Cardinal Cg Company Low-maintenance coating technology
JP5604888B2 (ja) * 2009-12-21 2014-10-15 住友大阪セメント株式会社 静電チャックの製造方法
EP2671855B1 (en) * 2011-02-04 2016-05-25 Sumitomo Metal Mining Co., Ltd. Oxide sintered body and tablets obtained by processing same
CN102751341A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 透明导电薄膜及其制备方法
SG11201509031RA (en) * 2013-05-02 2015-11-27 Basf Se Polyarylethersulfone copolymers
JP5967016B2 (ja) * 2013-05-29 2016-08-10 住友金属鉱山株式会社 蒸着用タブレットとその製造方法
JP6044503B2 (ja) * 2013-10-08 2016-12-14 住友金属鉱山株式会社 導電性接着フィルム及びそれを用いた多接合型太陽電池
KR20150105527A (ko) 2014-03-06 2015-09-17 삼성디스플레이 주식회사 산화물 스퍼터링 타겟 및 이를 이용한 박막 트랜지스터
JP6119773B2 (ja) * 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6233447B2 (ja) * 2014-03-25 2017-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
CN105745183B (zh) 2014-08-12 2018-03-13 住友电气工业株式会社 氧化物烧结体及其制造方法、溅射靶、以及半导体器件
EP3061735A4 (en) * 2014-10-22 2016-12-14 Sumitomo Electric Industries SINTERED OXID AND SEMICONDUCTOR ELEMENT
US10475631B2 (en) 2015-02-13 2019-11-12 Sumitomo Electric Industries, Ltd. Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device
CN105374901A (zh) * 2015-11-18 2016-03-02 南京迪纳科光电材料有限公司 用于薄膜太阳能电池透明电极的iwo材料的制备方法
WO2018093985A1 (en) 2016-11-17 2018-05-24 Cardinal Cg Company Static-dissipative coating technology
GB2562115B (en) 2017-05-05 2022-02-16 William Blythe Ltd Tungsten oxide
GB2562116B (en) 2017-05-05 2022-04-27 William Blythe Ltd Metal oxide, composition comprising the same and method of making metal oxide
JP6493501B2 (ja) * 2017-12-05 2019-04-03 住友電気工業株式会社 酸化物焼結体の製造方法
CN111943650B (zh) * 2020-07-22 2022-11-29 长沙壹纳光电材料有限公司 一种用于活化等离子沉积技术的iwo靶材及其制备方法
CN113548872A (zh) * 2021-07-16 2021-10-26 长沙壹纳光电材料有限公司 一种iwo靶材及其制备方法与应用
CN114702304B (zh) * 2022-05-11 2023-03-17 郑州大学 一种铟钨氧化物靶材及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938541B2 (ja) * 1979-12-22 1984-09-18 松下電工株式会社 可燃性ガス検知素子
JPS59204625A (ja) * 1983-05-06 1984-11-20 Daicel Chem Ind Ltd 透明導電性フイルムの製造方法
NL8501257A (nl) * 1985-05-03 1986-12-01 Philips Nv Werkwijze voor het vervaardigen van een naleveringskathode en toepassing van de werkwijze.
JPH01278869A (ja) * 1988-04-30 1989-11-09 Mazda Motor Corp 車両の故障診断装置
US5225273A (en) * 1989-12-28 1993-07-06 Teijin Limited Transparent electroconductive laminate
JPH0656503A (ja) * 1992-08-10 1994-03-01 Showa Denko Kk Ｉｔｏ焼結体
JP3827334B2 (ja) * 1993-08-11 2006-09-27 東ソー株式会社 Ｉｔｏ焼結体及びスパッタリングターゲット
JPH11279438A (ja) * 1998-03-27 1999-10-12 Sumitomo Osaka Cement Co Ltd 透明導電膜形成用塗料および透明導電膜
JP2000238178A (ja) * 1999-02-24 2000-09-05 Teijin Ltd 透明導電積層体
CN1191592C (zh) * 2000-04-11 2005-03-02 复旦大学 一种透明导电薄膜的制备方法
JP2002075623A (ja) 2000-09-04 2002-03-15 Mitsubishi Electric Corp 誘導加熱調理器及びその制御方法
JP4560219B2 (ja) 2001-01-15 2010-10-13 旭化成ケミカルズ株式会社 ガラス基板用緩衝体
JP3780932B2 (ja) * 2000-12-28 2006-05-31 住友金属鉱山株式会社 透明導電性薄膜作製用焼結体ターゲットおよびその製造方法
JP4140805B2 (ja) 2000-12-28 2008-08-27 株式会社スギノマシン 手動ツール交換機能付きマシニングセンタ
JP2002275623A (ja) * 2001-03-19 2002-09-25 Sumitomo Metal Mining Co Ltd 透明導電性薄膜形成用焼結体ターゲット、その製造方法、及びそれより得られる透明導電性薄膜
JP4647823B2 (ja) 2001-04-26 2011-03-09 旭化成エレクトロニクス株式会社 Ｇｍ−Ｃフィルタ

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