TWI241982B - Oxide sintered body - Google Patents
Oxide sintered body Download PDFInfo
- Publication number
- TWI241982B TWI241982B TW092113424A TW92113424A TWI241982B TW I241982 B TWI241982 B TW I241982B TW 092113424 A TW092113424 A TW 092113424A TW 92113424 A TW92113424 A TW 92113424A TW I241982 B TWI241982 B TW I241982B
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- TW
- Taiwan
- Prior art keywords
- sintered body
- oxide
- oxide sintered
- resistivity
- indium
- Prior art date
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- 239000013078 crystal Substances 0.000 claims abstract description 38
- 229910052738 indium Inorganic materials 0.000 claims abstract description 30
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 28
- 239000010937 tungsten Substances 0.000 claims abstract description 28
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 17
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 15
- -1 indium tungstate compound Chemical class 0.000 claims abstract description 14
- 239000006104 solid solution Substances 0.000 claims abstract description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- 241001494479 Pecora Species 0.000 claims description 4
- 150000002472 indium compounds Chemical class 0.000 claims description 3
- 229940071182 stannate Drugs 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical group [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 76
- 238000000151 deposition Methods 0.000 description 55
- 230000008021 deposition Effects 0.000 description 54
- 238000000034 method Methods 0.000 description 39
- 239000000463 material Substances 0.000 description 29
- 238000005496 tempering Methods 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 21
- 239000000843 powder Substances 0.000 description 16
- 238000007747 plating Methods 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 238000005245 sintering Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000000691 measurement method Methods 0.000 description 10
- 239000000523 sample Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 241001674048 Phthiraptera Species 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000010985 leather Substances 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000000634 powder X-ray diffraction Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 208000031872 Body Remains Diseases 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011946 reduction process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- QYHNIMDZIYANJH-UHFFFAOYSA-N diindium Chemical compound [In]#[In] QYHNIMDZIYANJH-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 229910000616 Ferromanganese Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 235000000434 Melocanna baccifera Nutrition 0.000 description 1
- 241001497770 Melocanna baccifera Species 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 206010039509 Scab Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FHKPLLOSJHHKNU-INIZCTEOSA-N [(3S)-3-[8-(1-ethyl-5-methylpyrazol-4-yl)-9-methylpurin-6-yl]oxypyrrolidin-1-yl]-(oxan-4-yl)methanone Chemical compound C(C)N1N=CC(=C1C)C=1N(C2=NC=NC(=C2N=1)O[C@@H]1CN(CC1)C(=O)C1CCOCC1)C FHKPLLOSJHHKNU-INIZCTEOSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- AQLMHYSWFMLWBS-UHFFFAOYSA-N arsenite(1-) Chemical compound O[As](O)[O-] AQLMHYSWFMLWBS-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical compound [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- IZGYIFFQBZWOLJ-CKAACLRMSA-N phaseic acid Chemical compound C1C(=O)C[C@@]2(C)OC[C@]1(C)[C@@]2(O)C=CC(/C)=C\C(O)=O IZGYIFFQBZWOLJ-CKAACLRMSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 235000020185 raw untreated milk Nutrition 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/664—Reductive annealing
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002255425A JP3906766B2 (ja) | 2002-08-30 | 2002-08-30 | 酸化物焼結体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200403189A TW200403189A (en) | 2004-03-01 |
| TWI241982B true TWI241982B (en) | 2005-10-21 |
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| TW092113424A TWI241982B (en) | 2002-08-30 | 2003-05-19 | Oxide sintered body |
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| US (2) | US7011691B2 (enExample) |
| JP (1) | JP3906766B2 (enExample) |
| KR (1) | KR100683585B1 (enExample) |
| CN (1) | CN1326154C (enExample) |
| TW (1) | TWI241982B (enExample) |
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| TWI254080B (en) * | 2002-03-27 | 2006-05-01 | Sumitomo Metal Mining Co | Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device |
| JP3797317B2 (ja) * | 2002-05-30 | 2006-07-19 | 住友金属鉱山株式会社 | 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子 |
| JP2005306662A (ja) * | 2004-04-21 | 2005-11-04 | Tdk Corp | 誘電体セラミックス粉末の製造方法及び複合誘電体材料の製造方法 |
| JP4826066B2 (ja) * | 2004-04-27 | 2011-11-30 | 住友金属鉱山株式会社 | 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法 |
| CA2570369C (en) | 2004-07-12 | 2008-02-19 | Cardinal Cg Company | Low-maintenance coatings |
| JP4182357B2 (ja) * | 2005-01-17 | 2008-11-19 | 住友金属鉱山株式会社 | 熱線遮蔽樹脂シート材および熱線遮蔽樹脂シート材積層体、並びにそれらを用いた建築構造体 |
| KR100961421B1 (ko) * | 2005-03-25 | 2010-06-09 | 아사히 가라스 가부시키가이샤 | 전기 전도성 재료 |
| ITTO20050269A1 (it) * | 2005-04-21 | 2006-10-22 | Sales Spa | Dispositivo di apertura per contenitori flessibili ermetici |
| US8999836B2 (en) | 2005-05-13 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US7862910B2 (en) | 2006-04-11 | 2011-01-04 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
| US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
| US7452488B2 (en) * | 2006-10-31 | 2008-11-18 | H.C. Starck Inc. | Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein |
| US7820296B2 (en) * | 2007-09-14 | 2010-10-26 | Cardinal Cg Company | Low-maintenance coating technology |
| JP5604888B2 (ja) * | 2009-12-21 | 2014-10-15 | 住友大阪セメント株式会社 | 静電チャックの製造方法 |
| EP2671855B1 (en) * | 2011-02-04 | 2016-05-25 | Sumitomo Metal Mining Co., Ltd. | Oxide sintered body and tablets obtained by processing same |
| CN102751341A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 透明导电薄膜及其制备方法 |
| SG11201509031RA (en) * | 2013-05-02 | 2015-11-27 | Basf Se | Polyarylethersulfone copolymers |
| JP5967016B2 (ja) * | 2013-05-29 | 2016-08-10 | 住友金属鉱山株式会社 | 蒸着用タブレットとその製造方法 |
| JP6044503B2 (ja) * | 2013-10-08 | 2016-12-14 | 住友金属鉱山株式会社 | 導電性接着フィルム及びそれを用いた多接合型太陽電池 |
| KR20150105527A (ko) | 2014-03-06 | 2015-09-17 | 삼성디스플레이 주식회사 | 산화물 스퍼터링 타겟 및 이를 이용한 박막 트랜지스터 |
| JP6119773B2 (ja) * | 2014-03-25 | 2017-04-26 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス |
| JP6233447B2 (ja) * | 2014-03-25 | 2017-11-22 | 住友電気工業株式会社 | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス |
| CN105745183B (zh) | 2014-08-12 | 2018-03-13 | 住友电气工业株式会社 | 氧化物烧结体及其制造方法、溅射靶、以及半导体器件 |
| EP3061735A4 (en) * | 2014-10-22 | 2016-12-14 | Sumitomo Electric Industries | SINTERED OXID AND SEMICONDUCTOR ELEMENT |
| US10475631B2 (en) | 2015-02-13 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device |
| CN105374901A (zh) * | 2015-11-18 | 2016-03-02 | 南京迪纳科光电材料有限公司 | 用于薄膜太阳能电池透明电极的iwo材料的制备方法 |
| WO2018093985A1 (en) | 2016-11-17 | 2018-05-24 | Cardinal Cg Company | Static-dissipative coating technology |
| GB2562115B (en) | 2017-05-05 | 2022-02-16 | William Blythe Ltd | Tungsten oxide |
| GB2562116B (en) | 2017-05-05 | 2022-04-27 | William Blythe Ltd | Metal oxide, composition comprising the same and method of making metal oxide |
| JP6493501B2 (ja) * | 2017-12-05 | 2019-04-03 | 住友電気工業株式会社 | 酸化物焼結体の製造方法 |
| CN111943650B (zh) * | 2020-07-22 | 2022-11-29 | 长沙壹纳光电材料有限公司 | 一种用于活化等离子沉积技术的iwo靶材及其制备方法 |
| CN113548872A (zh) * | 2021-07-16 | 2021-10-26 | 长沙壹纳光电材料有限公司 | 一种iwo靶材及其制备方法与应用 |
| CN114702304B (zh) * | 2022-05-11 | 2023-03-17 | 郑州大学 | 一种铟钨氧化物靶材及其制备方法 |
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| JPS5938541B2 (ja) * | 1979-12-22 | 1984-09-18 | 松下電工株式会社 | 可燃性ガス検知素子 |
| JPS59204625A (ja) * | 1983-05-06 | 1984-11-20 | Daicel Chem Ind Ltd | 透明導電性フイルムの製造方法 |
| NL8501257A (nl) * | 1985-05-03 | 1986-12-01 | Philips Nv | Werkwijze voor het vervaardigen van een naleveringskathode en toepassing van de werkwijze. |
| JPH01278869A (ja) * | 1988-04-30 | 1989-11-09 | Mazda Motor Corp | 車両の故障診断装置 |
| US5225273A (en) * | 1989-12-28 | 1993-07-06 | Teijin Limited | Transparent electroconductive laminate |
| JPH0656503A (ja) * | 1992-08-10 | 1994-03-01 | Showa Denko Kk | Ｉｔｏ焼結体 |
| JP3827334B2 (ja) * | 1993-08-11 | 2006-09-27 | 東ソー株式会社 | Ｉｔｏ焼結体及びスパッタリングターゲット |
| JPH11279438A (ja) * | 1998-03-27 | 1999-10-12 | Sumitomo Osaka Cement Co Ltd | 透明導電膜形成用塗料および透明導電膜 |
| JP2000238178A (ja) * | 1999-02-24 | 2000-09-05 | Teijin Ltd | 透明導電積層体 |
| CN1191592C (zh) * | 2000-04-11 | 2005-03-02 | 复旦大学 | 一种透明导电薄膜的制备方法 |
| JP2002075623A (ja) | 2000-09-04 | 2002-03-15 | Mitsubishi Electric Corp | 誘導加熱調理器及びその制御方法 |
| JP4560219B2 (ja) | 2001-01-15 | 2010-10-13 | 旭化成ケミカルズ株式会社 | ガラス基板用緩衝体 |
| JP3780932B2 (ja) * | 2000-12-28 | 2006-05-31 | 住友金属鉱山株式会社 | 透明導電性薄膜作製用焼結体ターゲットおよびその製造方法 |
| JP4140805B2 (ja) | 2000-12-28 | 2008-08-27 | 株式会社スギノマシン | 手動ツール交換機能付きマシニングセンタ |
| JP2002275623A (ja) * | 2001-03-19 | 2002-09-25 | Sumitomo Metal Mining Co Ltd | 透明導電性薄膜形成用焼結体ターゲット、その製造方法、及びそれより得られる透明導電性薄膜 |
| JP4647823B2 (ja) | 2001-04-26 | 2011-03-09 | 旭化成エレクトロニクス株式会社 | Ｇｍ−Ｃフィルタ |
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2002
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-
2003
- 2003-05-19 TW TW092113424A patent/TWI241982B/zh not_active IP Right Cessation
- 2003-05-20 US US10/441,980 patent/US7011691B2/en not_active Expired - Lifetime
- 2003-05-20 KR KR1020030031813A patent/KR100683585B1/ko not_active Expired - Fee Related
- 2003-05-20 CN CNB031476880A patent/CN1326154C/zh not_active Expired - Lifetime
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2005
- 2005-12-12 US US11/301,205 patent/US7569167B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1326154C (zh) | 2007-07-11 |
| TW200403189A (en) | 2004-03-01 |
| CN1479321A (zh) | 2004-03-03 |
| JP2004091265A (ja) | 2004-03-25 |
| US7011691B2 (en) | 2006-03-14 |
| US20040040414A1 (en) | 2004-03-04 |
| US7569167B2 (en) | 2009-08-04 |
| US20060099140A1 (en) | 2006-05-11 |
| JP3906766B2 (ja) | 2007-04-18 |
| KR100683585B1 (ko) | 2007-02-15 |
| KR20040019865A (ko) | 2004-03-06 |
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