KR100654878B1 - 고체 촬상 소자 및 카메라 시스템 - Google Patents
고체 촬상 소자 및 카메라 시스템 Download PDFInfo
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- KR100654878B1 KR100654878B1 KR1020060043369A KR20060043369A KR100654878B1 KR 100654878 B1 KR100654878 B1 KR 100654878B1 KR 1020060043369 A KR1020060043369 A KR 1020060043369A KR 20060043369 A KR20060043369 A KR 20060043369A KR 100654878 B1 KR100654878 B1 KR 100654878B1
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
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- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
- H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
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- H—ELECTRICITY
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- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
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- Multimedia (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (4)
- 고체 촬상 소자에 있어서,그 각각이 광전 변환 소자, 상기 광전 변환 소자에 저장된 전하를 전송하기 위한 전송 스위치 및 상기 전송 스위치에 의해 전송된 전하를 저장하기 위한 전하 저장부를 구비하는 단위 픽셀을 포함하고,전하 전송 펄스가 게이트에 인가되지 않는 기간 동안, 상기 전송 스위치의 게이트에 음 전위가 인가되는 고체 촬상 소자.
- 고체 촬상 소자에 있어서,매트릭스 형태로 배열되고, 광전 변환 소자, 상기 광전 변환 소자에 저장된 전하를 전송하기 위한 전송 스위치, 상기 전송 스위치에 의해 전송된 전하를 저장하기 위한 전하 저장부, 상기 전하 저장부를 리셋하기 위한 리셋 스위치, 및 상기 전하 저장부의 전위에 대응하는 신호를 출력하기 위한 증폭 소자를 구비하는 단위 픽셀을 포함하고,상기 리셋 스위치는 공핍형 트랜지스터인 고체 촬상 소자.
- 카메라 시스템에 있어서,그 각각이 광전 변환 소자, 상기 광전 변환 소자에 저장된 전하를 전송하기 위한 전송 스위치 및 상기 전송 스위치에 의해 전송된 전하를 저장하기 위한 전하 저장부를 구비하는 단위 픽셀을 구비한 고체 촬상 소자 - 전하 전송 펄스가 게이트에 인가되지 않는 기간 동안에는 상기 전송 스위치의 게이트에 음 전위가 인가됨 -; 및상기 고체 촬상 소자를 구동하도록 구성된 구동 소자를 포함하는 카메라 시스템.
- 카메라 시스템에 있어서,매트릭스 형태로 배열되고, 광전 변환 소자, 상기 광전 변환 소자에 저장된 전하를 전송하기 위한 전송 스위치, 상기 전송 스위치에 의해 전송된 전하를 저장하기 위한 전하 저장부, 상기 전하 저장부를 리셋하기 위한 리셋 스위치, 및 상기 전하 저장부의 전위에 대응하는 신호를 출력하기 위한 증폭 소자를 구비하는 단위 픽셀을 구비한 고체 촬상 소자 - 상기 리셋 스위치는 공핍형 트랜지스터임 -; 및상기 고체 촬상 소자로부터 출력 신호를 처리하도록 구성된 신호 처리 소자를 포함하는 카메라 시스템.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-1998-00159050 | 1998-06-08 | ||
JP15905098A JP4200545B2 (ja) | 1998-06-08 | 1998-06-08 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019990020893A Division KR100690477B1 (ko) | 1998-06-08 | 1999-06-07 | 고체 촬상 소자, 그 소자의 구동 방법, 및 카메라 시스템 |
Publications (2)
Publication Number | Publication Date |
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KR20060059952A KR20060059952A (ko) | 2006-06-02 |
KR100654878B1 true KR100654878B1 (ko) | 2006-12-08 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019990020893A KR100690477B1 (ko) | 1998-06-08 | 1999-06-07 | 고체 촬상 소자, 그 소자의 구동 방법, 및 카메라 시스템 |
KR1020060043369A KR100654878B1 (ko) | 1998-06-08 | 2006-05-15 | 고체 촬상 소자 및 카메라 시스템 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019990020893A KR100690477B1 (ko) | 1998-06-08 | 1999-06-07 | 고체 촬상 소자, 그 소자의 구동 방법, 및 카메라 시스템 |
Country Status (6)
Country | Link |
---|---|
US (13) | US7116365B1 (ko) |
EP (2) | EP0964570B1 (ko) |
JP (1) | JP4200545B2 (ko) |
KR (2) | KR100690477B1 (ko) |
DE (1) | DE69942941D1 (ko) |
TW (1) | TW416235B (ko) |
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