KR100647884B1 - 할로 이온주입법을 이용한 반도체 디바이스 제조 방법 - Google Patents

할로 이온주입법을 이용한 반도체 디바이스 제조 방법 Download PDF

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Publication number
KR100647884B1
KR100647884B1 KR1020027006835A KR20027006835A KR100647884B1 KR 100647884 B1 KR100647884 B1 KR 100647884B1 KR 1020027006835 A KR1020027006835 A KR 1020027006835A KR 20027006835 A KR20027006835 A KR 20027006835A KR 100647884 B1 KR100647884 B1 KR 100647884B1
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KR
South Korea
Prior art keywords
ion implantation
semiconductor device
photoresist
halo ion
halo
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020027006835A
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English (en)
Korean (ko)
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KR20020060980A (ko
Inventor
가엠마가미아메드
크리보카픽조란
스완슨브라이언
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20020060980A publication Critical patent/KR20020060980A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/022—Manufacture or treatment of FETs having insulated gates [IGFET] having lightly-doped source or drain extensions selectively formed at the sides of the gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020027006835A 1999-11-29 2000-06-23 할로 이온주입법을 이용한 반도체 디바이스 제조 방법 Expired - Fee Related KR100647884B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16815599P 1999-11-29 1999-11-29
US60/168,155 1999-11-29
US09/497,320 US7192836B1 (en) 1999-11-29 2000-02-03 Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance
US09/497,320 2000-02-03

Publications (2)

Publication Number Publication Date
KR20020060980A KR20020060980A (ko) 2002-07-19
KR100647884B1 true KR100647884B1 (ko) 2006-11-23

Family

ID=26863843

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027006835A Expired - Fee Related KR100647884B1 (ko) 1999-11-29 2000-06-23 할로 이온주입법을 이용한 반도체 디바이스 제조 방법

Country Status (7)

Country Link
US (1) US7192836B1 (enExample)
EP (1) EP1234335B1 (enExample)
JP (1) JP2003515931A (enExample)
KR (1) KR100647884B1 (enExample)
CN (1) CN1307724C (enExample)
DE (1) DE60031881T2 (enExample)
WO (1) WO2001039273A1 (enExample)

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US6462371B1 (en) * 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6677646B2 (en) 2002-04-05 2004-01-13 International Business Machines Corporation Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS
KR100531105B1 (ko) * 2003-07-23 2005-11-28 동부아남반도체 주식회사 반도체 소자 제조방법
US8216903B2 (en) * 2005-09-29 2012-07-10 Texas Instruments Incorporated SRAM cell with asymmetrical pass gate
KR100752173B1 (ko) * 2005-12-29 2007-08-24 동부일렉트로닉스 주식회사 반도체 소자의 포켓 이온 주입 감광막 패턴 및 그 형성방법
KR101416316B1 (ko) 2007-12-12 2014-07-08 삼성전자주식회사 국부적인 할로 이온 영역을 포함하는 전계 효과트랜지스터, 이를 포함하는 반도체 메모리, 메모리 카드 및시스템
US8822293B2 (en) * 2008-03-13 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices
US8877596B2 (en) * 2010-06-24 2014-11-04 International Business Machines Corporation Semiconductor devices with asymmetric halo implantation and method of manufacture
KR200454335Y1 (ko) * 2011-01-21 2011-06-29 임석우 조명장치를 갖춘 모자
WO2013048513A1 (en) * 2011-09-30 2013-04-04 Intel Corporation Non-planar transitor fin fabrication
CN103337482A (zh) * 2013-06-17 2013-10-02 上海集成电路研发中心有限公司 可调节阈值电压的静态随机存储器晶体管单元制造方法

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JPS63312678A (ja) * 1987-06-16 1988-12-21 Sanyo Electric Co Ltd Ｍｏｓ半導体装置の製造方法
US5045486A (en) * 1990-06-26 1991-09-03 At&T Bell Laboratories Transistor fabrication method
JPH05198804A (ja) * 1991-07-25 1993-08-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US5320974A (en) * 1991-07-25 1994-06-14 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor transistor device by implanting punch through stoppers
US5894158A (en) 1991-09-30 1999-04-13 Stmicroelectronics, Inc. Having halo regions integrated circuit device structure
JPH06196492A (ja) * 1992-12-24 1994-07-15 Nippon Steel Corp 半導体装置及びその製造方法
JP3246094B2 (ja) * 1993-06-11 2002-01-15 ソニー株式会社 トランジスタの製造方法
US5378659A (en) 1993-07-06 1995-01-03 Motorola Inc. Method and structure for forming an integrated circuit pattern on a semiconductor substrate
KR970004074A (ko) * 1995-06-05 1997-01-29 빈센트 비. 인그라시아 절연 게이트 전계 효과 트랜지스터 및 그 제조 방법
US5675166A (en) * 1995-07-07 1997-10-07 Motorola, Inc. FET with stable threshold voltage and method of manufacturing the same
KR19990064285A (ko) * 1995-10-04 1999-07-26 피터 엔. 데트킨 도핑된 글라스로부터의 소스/드레인의 형성
US5595919A (en) * 1996-02-20 1997-01-21 Chartered Semiconductor Manufacturing Pte Ltd. Method of making self-aligned halo process for reducing junction capacitance
JPH09289315A (ja) * 1996-04-22 1997-11-04 Sony Corp 半導体装置の製造方法
JPH09304945A (ja) * 1996-05-10 1997-11-28 Hitachi Ltd パターン形成方法
US6020244A (en) * 1996-12-30 2000-02-01 Intel Corporation Channel dopant implantation with automatic compensation for variations in critical dimension
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US6320236B1 (en) * 1999-10-06 2001-11-20 Advanced Micro Devices, Inc. Optimization of logic gates with criss-cross implants to form asymmetric channel regions

Also Published As

Publication number Publication date
KR20020060980A (ko) 2002-07-19
WO2001039273A1 (en) 2001-05-31
US7192836B1 (en) 2007-03-20
CN1307724C (zh) 2007-03-28
DE60031881T2 (de) 2007-07-05
EP1234335B1 (en) 2006-11-15
CN1373904A (zh) 2002-10-09
EP1234335A1 (en) 2002-08-28
JP2003515931A (ja) 2003-05-07
DE60031881D1 (de) 2006-12-28

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