KR100642650B1 - 측방확장 활성영역을 갖는 반도체소자 및 그 제조방법 - Google Patents

측방확장 활성영역을 갖는 반도체소자 및 그 제조방법 Download PDF

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Publication number
KR100642650B1
KR100642650B1 KR1020050088333A KR20050088333A KR100642650B1 KR 100642650 B1 KR100642650 B1 KR 100642650B1 KR 1020050088333 A KR1020050088333 A KR 1020050088333A KR 20050088333 A KR20050088333 A KR 20050088333A KR 100642650 B1 KR100642650 B1 KR 100642650B1
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South Korea
Prior art keywords
active region
device isolation
gate
trench
layer
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Expired - Fee Related
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KR1020050088333A
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English (en)
Korean (ko)
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조민희
김지영
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삼성전자주식회사
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Priority to KR1020050088333A priority Critical patent/KR100642650B1/ko
Priority to US11/387,029 priority patent/US7470588B2/en
Priority to JP2006133328A priority patent/JP5165212B2/ja
Priority to CNB2006101074258A priority patent/CN100481507C/zh
Application granted granted Critical
Publication of KR100642650B1 publication Critical patent/KR100642650B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
KR1020050088333A 2005-09-22 2005-09-22 측방확장 활성영역을 갖는 반도체소자 및 그 제조방법 Expired - Fee Related KR100642650B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050088333A KR100642650B1 (ko) 2005-09-22 2005-09-22 측방확장 활성영역을 갖는 반도체소자 및 그 제조방법
US11/387,029 US7470588B2 (en) 2005-09-22 2006-03-22 Transistors including laterally extended active regions and methods of fabricating the same
JP2006133328A JP5165212B2 (ja) 2005-09-22 2006-05-12 側方拡張活性領域を有する半導体素子及びその製造方法
CNB2006101074258A CN100481507C (zh) 2005-09-22 2006-07-24 包括横向延伸的有源区的晶体管及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050088333A KR100642650B1 (ko) 2005-09-22 2005-09-22 측방확장 활성영역을 갖는 반도체소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR100642650B1 true KR100642650B1 (ko) 2006-11-10

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Family Applications (1)

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KR1020050088333A Expired - Fee Related KR100642650B1 (ko) 2005-09-22 2005-09-22 측방확장 활성영역을 갖는 반도체소자 및 그 제조방법

Country Status (4)

Country Link
US (1) US7470588B2 (enExample)
JP (1) JP5165212B2 (enExample)
KR (1) KR100642650B1 (enExample)
CN (1) CN100481507C (enExample)

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JP2006324488A (ja) * 2005-05-19 2006-11-30 Nec Electronics Corp 半導体装置及びその製造方法
TWI278067B (en) * 2006-01-09 2007-04-01 Nanya Technology Corp Method for fabricating a recessed-gate MOS transistor device
US8236651B2 (en) * 2009-08-14 2012-08-07 Alpha And Omega Semiconductor Incorporated Shielded gate trench MOSFET device and fabrication
US8618601B2 (en) * 2009-08-14 2013-12-31 Alpha And Omega Semiconductor Incorporated Shielded gate trench MOSFET with increased source-metal contact
US8193580B2 (en) 2009-08-14 2012-06-05 Alpha And Omega Semiconductor, Inc. Shielded gate trench MOSFET device and fabrication
TWI309067B (en) * 2006-03-15 2009-04-21 Nanya Technology Corp Method for fabricating a recessed-gate mos transistor device
JP2007250855A (ja) * 2006-03-16 2007-09-27 Elpida Memory Inc 半導体装置及びその製造方法
KR100702302B1 (ko) * 2006-03-24 2007-03-30 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20070262395A1 (en) 2006-05-11 2007-11-15 Gibbons Jasper S Memory cell access devices and methods of making the same
US8008144B2 (en) 2006-05-11 2011-08-30 Micron Technology, Inc. Dual work function recessed access device and methods of forming
US8860174B2 (en) * 2006-05-11 2014-10-14 Micron Technology, Inc. Recessed antifuse structures and methods of making the same
JP4560820B2 (ja) * 2006-06-20 2010-10-13 エルピーダメモリ株式会社 半導体装置の製造方法
KR100724575B1 (ko) * 2006-06-28 2007-06-04 삼성전자주식회사 매립 게이트전극을 갖는 반도체소자 및 그 형성방법
KR100780598B1 (ko) * 2006-12-05 2007-11-30 주식회사 하이닉스반도체 벌브형 리세스 게이트를 갖는 반도체 소자의 제조 방법
KR101026479B1 (ko) * 2006-12-28 2011-04-01 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
US7696568B2 (en) * 2007-05-21 2010-04-13 Micron Technology, Inc. Semiconductor device having reduced sub-threshold leakage
US20080299740A1 (en) * 2007-05-29 2008-12-04 Macronix International Co., Ltd. Method for forming sti structure
JP2008305942A (ja) * 2007-06-07 2008-12-18 Tokyo Electron Ltd 半導体メモリ装置およびその製造方法
US7816216B2 (en) 2007-07-09 2010-10-19 Micron Technology, Inc. Semiconductor device comprising transistor structures and methods for forming same
TW200905752A (en) * 2007-07-18 2009-02-01 Nanya Technology Corp Semeconductor device with long channel and manufacturing method thereof
KR100942961B1 (ko) * 2007-10-24 2010-02-17 주식회사 하이닉스반도체 주상 구조의 폴리실리콘 게이트전극을 구비한 반도체소자의제조 방법
JP2009224520A (ja) * 2008-03-14 2009-10-01 Elpida Memory Inc 半導体装置及び半導体装置の製造方法
KR101003496B1 (ko) * 2008-09-29 2010-12-30 주식회사 하이닉스반도체 소자분리 구조 및 리세스 게이트를 포함하는 반도체 소자 및 제조 방법
US8431457B2 (en) 2010-03-11 2013-04-30 Alpha And Omega Semiconductor Incorporated Method for fabricating a shielded gate trench MOS with improved source pickup layout
US8912595B2 (en) * 2011-05-12 2014-12-16 Nanya Technology Corp. Trench MOS structure and method for forming the same
US8829603B2 (en) 2011-08-18 2014-09-09 Alpha And Omega Semiconductor Incorporated Shielded gate trench MOSFET package
KR101964262B1 (ko) * 2011-11-25 2019-04-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102008317B1 (ko) * 2012-03-07 2019-08-07 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조방법
TWI470733B (zh) * 2012-08-28 2015-01-21 Anpec Electronics Corp 溝渠絕緣製程
CN107195546A (zh) * 2017-07-12 2017-09-22 张凯 一种沟槽形成方法
TWI685951B (zh) * 2018-10-08 2020-02-21 力晶積成電子製造股份有限公司 非揮發性記憶體結構及其製造方法
CN111341728B (zh) * 2018-12-19 2022-12-02 夏泰鑫半导体(青岛)有限公司 半导体器件及其制造方法
US11233058B2 (en) 2018-12-19 2022-01-25 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Semiconductor device and method for fabricating the same
US11164874B2 (en) * 2018-12-19 2021-11-02 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Semiconductor device and method for fabricating the same
WO2022026768A1 (en) * 2020-07-29 2022-02-03 Hsu Fu Chang Transistor structures and associated processes

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JP3196830B2 (ja) * 1998-01-06 2001-08-06 日本電気株式会社 半導体装置及びその製造方法
JP2000150634A (ja) * 1998-11-13 2000-05-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100282452B1 (ko) * 1999-03-18 2001-02-15 김영환 반도체 소자 및 그의 제조 방법
KR100319642B1 (ko) 2000-02-11 2002-01-05 박종섭 트랜지스터 형성방법
JP4200626B2 (ja) * 2000-02-28 2008-12-24 株式会社デンソー 絶縁ゲート型パワー素子の製造方法
JP2002353445A (ja) 2001-05-30 2002-12-06 Sony Corp 溝ゲート型電界効果トランジスタの製造方法
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KR100558544B1 (ko) * 2003-07-23 2006-03-10 삼성전자주식회사 리세스 게이트 트랜지스터 구조 및 그에 따른 형성방법
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KR100618861B1 (ko) * 2004-09-09 2006-08-31 삼성전자주식회사 로컬 리세스 채널 트랜지스터를 구비하는 반도체 소자 및그 제조 방법
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Also Published As

Publication number Publication date
US20070063270A1 (en) 2007-03-22
CN100481507C (zh) 2009-04-22
JP2007088418A (ja) 2007-04-05
US7470588B2 (en) 2008-12-30
CN1941411A (zh) 2007-04-04
JP5165212B2 (ja) 2013-03-21

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