KR100319896B1 - 반도체 소자의 본딩 패드 구조 및 그 제조 방법 - Google Patents

반도체 소자의 본딩 패드 구조 및 그 제조 방법 Download PDF

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Publication number
KR100319896B1
KR100319896B1 KR1019990062154A KR19990062154A KR100319896B1 KR 100319896 B1 KR100319896 B1 KR 100319896B1 KR 1019990062154 A KR1019990062154 A KR 1019990062154A KR 19990062154 A KR19990062154 A KR 19990062154A KR 100319896 B1 KR100319896 B1 KR 100319896B1
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KR
South Korea
Prior art keywords
conductive film
continuous
bonding pad
island
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990062154A
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English (en)
Korean (ko)
Other versions
KR20000048406A (ko
Inventor
이수철
손경목
신헌종
안종현
이혜령
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019990062154A priority Critical patent/KR100319896B1/ko
Priority to JP11375282A priority patent/JP2000195866A/ja
Publication of KR20000048406A publication Critical patent/KR20000048406A/ko
Priority to US09/745,241 priority patent/US6552438B2/en
Application granted granted Critical
Publication of KR100319896B1 publication Critical patent/KR100319896B1/ko
Priority to JP2007098534A priority patent/JP5209224B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
    • H01L2224/05089—Disposition of the additional element
    • H01L2224/05093—Disposition of the additional element of a plurality of vias
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
    • H01L2224/05089—Disposition of the additional element
    • H01L2224/05093—Disposition of the additional element of a plurality of vias
    • H01L2224/05095—Disposition of the additional element of a plurality of vias at the periphery of the internal layers
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
KR1019990062154A 1998-06-24 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법 Expired - Fee Related KR100319896B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019990062154A KR100319896B1 (ko) 1998-12-28 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법
JP11375282A JP2000195866A (ja) 1998-12-28 1999-12-28 半導体素子のボンディングパッド構造及びその製造方法
US09/745,241 US6552438B2 (en) 1998-06-24 2000-12-21 Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same
JP2007098534A JP5209224B2 (ja) 1998-12-28 2007-04-04 半導体素子のボンディングパッド構造の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019980059418 1998-12-28
KR19980059418 1998-12-28
KR1019990062154A KR100319896B1 (ko) 1998-12-28 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20000048406A KR20000048406A (ko) 2000-07-25
KR100319896B1 true KR100319896B1 (ko) 2002-01-10

Family

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KR1019990062154A Expired - Fee Related KR100319896B1 (ko) 1998-06-24 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법

Country Status (2)

Country Link
JP (2) JP2000195866A (enExample)
KR (1) KR100319896B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195896A (ja) 1998-12-25 2000-07-14 Nec Corp 半導体装置
EP1275152A2 (en) * 2000-04-12 2003-01-15 Koninklijke Philips Electronics N.V. Bonding pad in semiconductor device
JP3434793B2 (ja) 2000-09-29 2003-08-11 Ｎｅｃエレクトロニクス株式会社 半導体装置とその製造方法
KR100500416B1 (ko) * 2000-11-15 2005-07-12 주식회사 하이닉스반도체 반도체 소자의 패드 제조 방법
KR100421043B1 (ko) * 2000-12-21 2004-03-04 삼성전자주식회사 비정렬되고 소정 거리 이격된 섬형 절연체들의 배열을 갖는 도전막을 포함하는 집적 회로 본딩 패드
JP2004095916A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
US7692315B2 (en) 2002-08-30 2010-04-06 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing the same
EP1519411A3 (en) 2003-09-26 2010-01-13 Panasonic Corporation Semiconductor device and method for fabricating the same
JP4579621B2 (ja) * 2003-09-26 2010-11-10 パナソニック株式会社 半導体装置
US6960836B2 (en) * 2003-09-30 2005-11-01 Agere Systems, Inc. Reinforced bond pad
JP4759229B2 (ja) * 2004-05-12 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置
JP2006024698A (ja) 2004-07-07 2006-01-26 Toshiba Corp 半導体装置及びその製造方法
KR100675275B1 (ko) * 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
JP4452217B2 (ja) 2005-07-04 2010-04-21 富士通マイクロエレクトロニクス株式会社 半導体装置
JP4757660B2 (ja) * 2006-02-27 2011-08-24 エルピーダメモリ株式会社 半導体装置
KR20120008511A (ko) 2009-04-28 2012-01-30 미쓰비시덴키 가부시키가이샤 전력용 반도체장치
JP2024106763A (ja) 2023-01-27 2024-08-08 三菱電機株式会社 ボンディングパッド、集積回路素子、及び集積回路装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326150A (ja) * 1993-05-12 1994-11-25 Sony Corp パッド構造
JPH0817859A (ja) * 1994-07-04 1996-01-19 Mitsubishi Electric Corp 半導体装置
JPH08213422A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置およびそのボンディングパッド構造
KR100200700B1 (ko) * 1996-02-29 1999-06-15 윤종용 다층 패드를 구비하는 반도체장치 및 그 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172752A (en) * 1981-04-16 1982-10-23 Fujitsu Ltd Semiconductor device
JPS61239646A (ja) * 1985-04-16 1986-10-24 Nec Corp 多層配線の形成方法
JP2916326B2 (ja) * 1992-06-11 1999-07-05 三菱電機株式会社 半導体装置のパッド構造
US5248903A (en) * 1992-09-18 1993-09-28 Lsi Logic Corporation Composite bond pads for semiconductor devices
JPH06196525A (ja) * 1992-12-24 1994-07-15 Kawasaki Steel Corp ボンディングパッドの構造
JPH08162532A (ja) * 1994-12-05 1996-06-21 Sony Corp 半導体装置の製造方法
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
JPH09162290A (ja) * 1995-12-04 1997-06-20 Ricoh Co Ltd 半導体集積回路装置
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
JP2001085465A (ja) * 1999-09-16 2001-03-30 Matsushita Electronics Industry Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326150A (ja) * 1993-05-12 1994-11-25 Sony Corp パッド構造
JPH0817859A (ja) * 1994-07-04 1996-01-19 Mitsubishi Electric Corp 半導体装置
JPH08213422A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置およびそのボンディングパッド構造
KR100200700B1 (ko) * 1996-02-29 1999-06-15 윤종용 다층 패드를 구비하는 반도체장치 및 그 제조방법

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Publication number Publication date
JP5209224B2 (ja) 2013-06-12
JP2007194663A (ja) 2007-08-02
KR20000048406A (ko) 2000-07-25
JP2000195866A (ja) 2000-07-14

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