KR100303682B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100303682B1
KR100303682B1 KR1019970709552A KR19970709552A KR100303682B1 KR 100303682 B1 KR100303682 B1 KR 100303682B1 KR 1019970709552 A KR1019970709552 A KR 1019970709552A KR 19970709552 A KR19970709552 A KR 19970709552A KR 100303682 B1 KR100303682 B1 KR 100303682B1
Authority
KR
South Korea
Prior art keywords
electrode
ferroelectric
planar shape
ferroelectric capacitor
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970709552A
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English (en)
Korean (ko)
Other versions
KR19990028241A (ko
Inventor
히로시게 히라노
마사토 다케오
Original Assignee
마츠시타 덴끼 산교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마츠시타 덴끼 산교 가부시키가이샤 filed Critical 마츠시타 덴끼 산교 가부시키가이샤
Publication of KR19990028241A publication Critical patent/KR19990028241A/ko
Application granted granted Critical
Publication of KR100303682B1 publication Critical patent/KR100303682B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019970709552A 1996-04-19 1997-04-18 반도체장치 Expired - Fee Related KR100303682B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP96-098267 1996-04-19
JP9826796 1996-04-19
PCT/JP1997/001347 WO1997040531A1 (fr) 1996-04-19 1997-04-18 Dispositif pour semi-conducteur

Publications (2)

Publication Number Publication Date
KR19990028241A KR19990028241A (ko) 1999-04-15
KR100303682B1 true KR100303682B1 (ko) 2001-11-02

Family

ID=14215177

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970709552A Expired - Fee Related KR100303682B1 (ko) 1996-04-19 1997-04-18 반도체장치

Country Status (7)

Country Link
US (2) US6163043A (enExample)
EP (1) EP0836226A4 (enExample)
JP (1) JP4386210B2 (enExample)
KR (1) KR100303682B1 (enExample)
CN (1) CN1142587C (enExample)
TW (1) TW322635B (enExample)
WO (1) WO1997040531A1 (enExample)

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TW322635B (enExample) * 1996-04-19 1997-12-11 Matsushita Electron Co Ltd
US6452776B1 (en) * 2000-04-06 2002-09-17 Intel Corporation Capacitor with defect isolation and bypass
JP3901432B2 (ja) * 2000-08-22 2007-04-04 セイコーエプソン株式会社 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
TWI224578B (en) * 2001-01-18 2004-12-01 Ibm Fabrication of silicon micro mechanical structures
JP2002270788A (ja) * 2001-03-14 2002-09-20 Fujitsu Ltd 半導体装置及びその製造方法
JP2002324852A (ja) * 2001-04-26 2002-11-08 Fujitsu Ltd 半導体装置及びその製造方法
US20030001188A1 (en) * 2001-06-27 2003-01-02 Nakagawa Osamu Samuel High-dielectric constant metal-insulator metal capacitor in VLSI multi-level metallization systems
JP2004047943A (ja) 2002-03-20 2004-02-12 Fujitsu Ltd 半導体装置
DE10308927A1 (de) 2003-02-28 2004-09-16 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einem Transistor und mit einer Leiterbahn
EP1793367A3 (en) * 2005-12-02 2009-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102124556A (zh) * 2007-12-21 2011-07-13 Nxp股份有限公司 适合于dram存储器的存储器单元
KR101037501B1 (ko) * 2008-10-30 2011-05-26 주식회사 하이닉스반도체 고집적 반도체 기억 장치
JP6142710B2 (ja) * 2013-07-24 2017-06-07 富士通セミコンダクター株式会社 半導体装置及びその設計方法
TWI550830B (zh) * 2014-05-23 2016-09-21 旺宏電子股份有限公司 半導體結構及其製造方法
CN105226061B (zh) * 2014-06-10 2018-04-24 旺宏电子股份有限公司 半导体结构及其制造方法
US9252155B2 (en) * 2014-06-20 2016-02-02 Macronix International Co., Ltd. Memory device and method for manufacturing the same
CN110164489B (zh) * 2019-05-28 2021-05-07 珠海创飞芯科技有限公司 优化Nor Flash存储阵列面积的相关方法及系统
CN110349960B (zh) * 2019-07-08 2021-06-18 上海华虹宏力半导体制造有限公司 嵌入式闪存的版图结构、嵌入式闪存及其形成方法
JP2023022365A (ja) * 2021-08-03 2023-02-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343616A (ja) * 1992-06-09 1993-12-24 Seiko Epson Corp 誘電体素子及びその製造方法
JPH07235639A (ja) * 1994-02-24 1995-09-05 Matsushita Electron Corp 半導体装置

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Publication number Priority date Publication date Assignee Title
EP0503078B1 (en) * 1990-09-28 2001-06-06 Ramtron International Corporation Semiconductor device
JPH04144282A (ja) * 1990-10-05 1992-05-18 Seiko Epson Corp 半導体装置
JPH04225510A (ja) * 1990-12-27 1992-08-14 Tosoh Corp コンデンサアレー
JPH0590489A (ja) * 1991-09-30 1993-04-09 Fujitsu Ltd 半導体集積回路
JPH05182857A (ja) * 1991-12-27 1993-07-23 Rohm Co Ltd 薄膜コンデンサ
US5216572A (en) * 1992-03-19 1993-06-01 Ramtron International Corporation Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors
JP3476845B2 (ja) * 1992-06-09 2003-12-10 セイコーエプソン株式会社 誘電体素子及び半導体記憶装置
JPH0669418A (ja) * 1992-08-21 1994-03-11 Fujitsu Ltd 半導体装置
JPH06204404A (ja) * 1992-12-28 1994-07-22 Hitachi Ltd 半導体装置、並びに容量素子およびその製造方法
JPH06244133A (ja) * 1993-02-22 1994-09-02 Matsushita Electron Corp 半導体装置およびその製造方法
JP2845727B2 (ja) * 1993-08-05 1999-01-13 松下電子工業株式会社 半導体装置の製造方法
EP0738013B1 (en) * 1993-08-05 2003-10-15 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor device having a high dielectric constant capacitor
JP3110605B2 (ja) * 1994-03-25 2000-11-20 松下電子工業株式会社 半導体装置およびその製造方法
US5548475A (en) * 1993-11-15 1996-08-20 Sharp Kabushiki Kaisha Dielectric thin film device
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
JP2875733B2 (ja) * 1994-02-15 1999-03-31 松下電子工業株式会社 半導体装置の製造方法
JP3460347B2 (ja) * 1994-03-30 2003-10-27 松下電器産業株式会社 半導体装置の製造方法
US5760432A (en) * 1994-05-20 1998-06-02 Kabushiki Kaisha Toshiba Thin film strained layer ferroelectric capacitors
US5519235A (en) * 1994-11-18 1996-05-21 Bell Communications Research, Inc. Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
KR100322695B1 (ko) * 1995-03-20 2002-05-13 윤종용 강유전성캐패시터의제조방법
US5638252A (en) * 1995-06-14 1997-06-10 Hughes Aircraft Company Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor
US5804823A (en) * 1995-10-10 1998-09-08 Raytheon Company Bismuth layered structure pyroelectric detectors
US5716875A (en) * 1996-03-01 1998-02-10 Motorola, Inc. Method for making a ferroelectric device
TW322635B (enExample) * 1996-04-19 1997-12-11 Matsushita Electron Co Ltd
US5773314A (en) * 1997-04-25 1998-06-30 Motorola, Inc. Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343616A (ja) * 1992-06-09 1993-12-24 Seiko Epson Corp 誘電体素子及びその製造方法
JPH07235639A (ja) * 1994-02-24 1995-09-05 Matsushita Electron Corp 半導体装置

Also Published As

Publication number Publication date
CN1194723A (zh) 1998-09-30
JP4386210B2 (ja) 2009-12-16
US6420743B1 (en) 2002-07-16
EP0836226A1 (en) 1998-04-15
WO1997040531A1 (fr) 1997-10-30
TW322635B (enExample) 1997-12-11
US6163043A (en) 2000-12-19
EP0836226A4 (en) 2001-09-05
KR19990028241A (ko) 1999-04-15
CN1142587C (zh) 2004-03-17

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