KR0180931B1 - 반도체 디바이스의 제조방법 - Google Patents

반도체 디바이스의 제조방법 Download PDF

Info

Publication number
KR0180931B1
KR0180931B1 KR1019950013523A KR19950013523A KR0180931B1 KR 0180931 B1 KR0180931 B1 KR 0180931B1 KR 1019950013523 A KR1019950013523 A KR 1019950013523A KR 19950013523 A KR19950013523 A KR 19950013523A KR 0180931 B1 KR0180931 B1 KR 0180931B1
Authority
KR
South Korea
Prior art keywords
resin
cavity
sealing resin
circuit board
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950013523A
Other languages
English (en)
Korean (ko)
Other versions
KR950034859A (ko
Inventor
마사히로 고니시
마사꼬 야베
도시히로 히다
Original Assignee
쯔지 하루오
샤프 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쯔지 하루오, 샤프 가부시끼가이샤 filed Critical 쯔지 하루오
Publication of KR950034859A publication Critical patent/KR950034859A/ko
Application granted granted Critical
Publication of KR0180931B1 publication Critical patent/KR0180931B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/005Arrays characterized by the distribution or form of lenses arranged along a single direction only, e.g. lenticular sheets
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/682Shapes or dispositions thereof comprising holes having chips therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR1019950013523A 1994-05-24 1995-05-24 반도체 디바이스의 제조방법 Expired - Fee Related KR0180931B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10982894 1994-05-24
JP94-109828 1994-05-24
JP6310352A JP2994219B2 (ja) 1994-05-24 1994-12-14 半導体デバイスの製造方法
JP94-310352 1994-12-14

Publications (2)

Publication Number Publication Date
KR950034859A KR950034859A (ko) 1995-12-28
KR0180931B1 true KR0180931B1 (ko) 1999-04-15

Family

ID=26449542

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950013523A Expired - Fee Related KR0180931B1 (ko) 1994-05-24 1995-05-24 반도체 디바이스의 제조방법

Country Status (7)

Country Link
US (1) US5635115A (https=)
EP (1) EP0684648B1 (https=)
JP (1) JP2994219B2 (https=)
KR (1) KR0180931B1 (https=)
CN (1) CN1100347C (https=)
DE (1) DE69518793T2 (https=)
MY (1) MY114173A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020079087A (ko) * 2001-04-13 2002-10-19 주식회사한영전자 표시등의 발광다이오드 보호 구조
KR100821436B1 (ko) * 2004-04-05 2008-04-10 닛토덴코 가부시키가이샤 광반도체 소자 캡슐화용 시이트 및 상기 시이트를 이용한광반도체 장치의 제조방법

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851449A (en) * 1995-09-27 1998-12-22 Kabushiki Kaisha Toshiba Method for manufacturing a surface-mounted type optical semiconductor device
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
WO1998041071A1 (en) * 1997-03-11 1998-09-17 Xemod, Inc. Hybrid module assembling method and apparatus
JP3391282B2 (ja) * 1998-07-02 2003-03-31 株式会社村田製作所 電子部品の製造方法
JP2001168400A (ja) * 1999-12-09 2001-06-22 Rohm Co Ltd ケース付チップ型発光装置およびその製造方法
US6856006B2 (en) * 2002-03-28 2005-02-15 Siliconix Taiwan Ltd Encapsulation method and leadframe for leadless semiconductor packages
JP5204947B2 (ja) * 2002-11-27 2013-06-05 ディーエムアイ バイオサイエンシズ インコーポレイテッド リン酸受容体化合物の使用、ならびにリン酸受容体化合物を含んでいる、薬学的組成物、スキンケア用の組成物、およびキット
CN100502062C (zh) * 2003-04-30 2009-06-17 美商克立股份有限公司 具有小型光学元件的高功率发光器封装
TWI263403B (en) * 2004-01-22 2006-10-01 Murata Manufacturing Co Electronic component manufacturing method
JP2005259847A (ja) * 2004-03-10 2005-09-22 Nitto Denko Corp 光半導体装置の製造方法
JP5004410B2 (ja) * 2004-04-26 2012-08-22 Towa株式会社 光素子の樹脂封止成形方法および樹脂封止成形装置
DE102004021927B4 (de) * 2004-05-04 2008-07-03 Semikron Elektronik Gmbh & Co. Kg Verfahren zur inneren elektrischen Isolation eines Substrats für ein Leistungshalbleitermodul
WO2005124399A1 (ja) * 2004-06-18 2005-12-29 Toray Industries, Inc. 異方拡散フィルム
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4031784B2 (ja) * 2004-07-28 2008-01-09 シャープ株式会社 発光モジュールおよびその製造方法
JP5128047B2 (ja) * 2004-10-07 2013-01-23 Towa株式会社 光デバイス及び光デバイスの生産方法
JP4627177B2 (ja) * 2004-11-10 2011-02-09 スタンレー電気株式会社 Ledの製造方法
JP2006140362A (ja) * 2004-11-15 2006-06-01 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
JP2007079526A (ja) * 2004-11-26 2007-03-29 Hasegawa Kagaku Kogyo Kk Icタグ及びその製造方法
JP2006173536A (ja) * 2004-12-20 2006-06-29 Nec Lighting Ltd 表面実装型led及びその製造方法
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
TW201403859A (zh) 2005-02-18 2014-01-16 日亞化學工業股份有限公司 具備控制配光特性用之透鏡之發光裝置
JP4889076B2 (ja) * 2005-04-14 2012-02-29 アサ電子工業株式会社 インジケータランプ
EP1715521B1 (en) * 2005-04-21 2012-02-22 C.R.F. Società Consortile per Azioni Use of a transparent display having light-emitting diodes (LED) in a motor vehicle
DE102005036520A1 (de) * 2005-04-26 2006-11-09 Osram Opto Semiconductors Gmbh Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung
TWI256737B (en) * 2005-05-19 2006-06-11 Pi-Fu Yang One-block light-emitting device and manufacturing method thereof
US7985357B2 (en) 2005-07-12 2011-07-26 Towa Corporation Method of resin-sealing and molding an optical device
JP4818654B2 (ja) * 2005-07-25 2011-11-16 ソニーケミカル&インフォメーションデバイス株式会社 発光素子の封止方法
US8007885B2 (en) * 2005-09-14 2011-08-30 Georgios Topoulos Light-emitting diode assembly housing comprising poly(cyclohexanedimethanol terephthalate) compositions
JP4969830B2 (ja) * 2005-10-26 2012-07-04 中島硝子工業株式会社 発光素子モジュールの製造方法
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US20070096132A1 (en) * 2005-11-01 2007-05-03 Jiahn-Chang Wu Coaxial LED lighting board
US20080151562A1 (en) * 2005-11-02 2008-06-26 Hwa Su Fabrication structure for light emitting diode component
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP2007201354A (ja) * 2006-01-30 2007-08-09 Matsushita Electric Ind Co Ltd 発光モジュール
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
JP4954591B2 (ja) * 2006-04-13 2012-06-20 シャープ株式会社 発光装置およびその製造方法
EP1848042A1 (en) * 2006-04-21 2007-10-24 LEXEDIS Lighting GmbH LED package with submount
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
KR100789951B1 (ko) * 2006-06-09 2008-01-03 엘지전자 주식회사 발광 유닛 제작 장치 및 방법
JP2006287267A (ja) * 2006-07-25 2006-10-19 Nippon Leiz Co Ltd 光源装置の製造方法
JP2006310887A (ja) * 2006-07-25 2006-11-09 Nippon Leiz Co Ltd 光源装置の製造方法
EP2060155A2 (en) 2006-08-23 2009-05-20 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
DE102006048592A1 (de) * 2006-10-13 2008-04-17 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Moduls
JP4858966B2 (ja) 2006-11-02 2012-01-18 Towa株式会社 電子部品の圧縮成形方法及び成形装置
CN101578711A (zh) * 2006-11-09 2009-11-11 跃进封装公司 Led反射性封装体
WO2008070607A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
EP2095018A1 (en) 2006-12-04 2009-09-02 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
JP2008159942A (ja) * 2006-12-25 2008-07-10 Matsushita Electric Works Ltd 物体検出センサ
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
JP4903179B2 (ja) 2007-04-23 2012-03-28 サムソン エルイーディー カンパニーリミテッド. 発光装置及びその製造方法
JP5080881B2 (ja) * 2007-06-27 2012-11-21 ナミックス株式会社 発光ダイオードチップの封止体の製造方法
JP5431320B2 (ja) 2007-07-17 2014-03-05 クリー インコーポレイテッド 内部光学機能を備えた光学素子およびその製造方法
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
DE102008014122A1 (de) * 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
JP5064278B2 (ja) * 2008-03-25 2012-10-31 日東電工株式会社 光半導体素子封止用樹脂シートおよび光半導体装置
JP5324114B2 (ja) * 2008-03-27 2013-10-23 リンテック株式会社 発光モジュール用シートの製造方法、発光モジュール用シート
JP5125748B2 (ja) * 2008-05-13 2013-01-23 豊田合成株式会社 発光装置の製造方法
US8461613B2 (en) * 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
CN101577301B (zh) * 2008-09-05 2011-12-21 佛山市国星光电股份有限公司 白光led的封装方法及使用该方法制作的led器件
KR100993317B1 (ko) * 2008-08-26 2010-11-09 삼성전기주식회사 발광 다이오드 패키지의 렌즈 제조방법
JP5174630B2 (ja) * 2008-11-26 2013-04-03 Towa株式会社 光学成形品の圧縮成形方法
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
CN101852384B (zh) * 2009-03-31 2013-08-28 光宝科技股份有限公司 形成发光二极管的透镜结构的方法及其相关架构
US8212263B2 (en) * 2009-04-03 2012-07-03 Koninklijke Philips Electronics N.V. Backlight including semiconductior light emitting devices
JP5301339B2 (ja) * 2009-04-14 2013-09-25 スタンレー電気株式会社 半導体装置
JP5440096B2 (ja) * 2009-10-26 2014-03-12 日立化成株式会社 光半導体装置の製造方法、光半導体素子搭載用基板の製造方法及び光半導体装置
CN102148311B (zh) * 2010-02-09 2013-06-05 良盟塑胶股份有限公司 Led封装方法
US10500770B2 (en) * 2010-03-02 2019-12-10 So-Semi Technologies, Llc LED packaging with integrated optics and methods of manufacturing the same
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
DE102010049333B4 (de) * 2010-10-22 2012-07-05 Jürgen Hackert Verfahren und Vorrichtung zur Herstellung einer bandförmigen Struktur zur Aufnahme von elektronischen Bauteilen
JP2012142364A (ja) * 2010-12-28 2012-07-26 Nitto Denko Corp 封止部材、封止方法、および、光半導体装置の製造方法
EP2674994B1 (en) * 2011-02-10 2019-07-17 Nichia Corporation Light emitting device, method for manufacturing light emitting device, and package array
JP5447407B2 (ja) * 2011-02-24 2014-03-19 日亜化学工業株式会社 発光装置
US8480254B2 (en) 2011-04-14 2013-07-09 Ticona, Llc Molded reflective structures for light-emitting diodes
US9453119B2 (en) 2011-04-14 2016-09-27 Ticona Llc Polymer composition for producing articles with light reflective properties
US9284448B2 (en) 2011-04-14 2016-03-15 Ticona Llc Molded reflectors for light-emitting diode assemblies
US9062198B2 (en) 2011-04-14 2015-06-23 Ticona Llc Reflectors for light-emitting diode assemblies containing a white pigment
KR20140088088A (ko) * 2011-11-29 2014-07-09 샤프 가부시키가이샤 봉지재, 및 형광체 함유 봉지재의 제조 방법
US9187621B2 (en) 2011-12-30 2015-11-17 Ticona Llc Reflector for light-emitting devices
US20130181227A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. LED Package with Slanting Structure and Method of the Same
US20130214418A1 (en) * 2012-01-12 2013-08-22 King Dragon International Inc. Semiconductor Device Package with Slanting Structures
JP6362834B2 (ja) * 2012-07-17 2018-07-25 晶元光電股▲ふん▼有限公司Epistar Corporation 半導体装置の製造方法
US9029880B2 (en) 2012-12-10 2015-05-12 LuxVue Technology Corporation Active matrix display panel with ground tie lines
US9159700B2 (en) 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
US9178123B2 (en) 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
WO2014099745A1 (en) 2012-12-18 2014-06-26 Ticona Llc Molded reflectors for light-emitting diode assemblies
TWI539872B (zh) * 2013-01-09 2016-06-21 聯京光電股份有限公司 基板、半導體結構以及其相關製造方法
CN105264283B (zh) * 2013-01-10 2018-06-12 莫列斯公司 Led组件
US20160032148A1 (en) * 2013-03-15 2016-02-04 Dow Corning Corporation A method for making an optical assembly comprising depositing a solid silicone-containing hot melt composition in powder form and forming an encapsulant thereof
JP2016519850A (ja) * 2013-04-08 2016-07-07 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Ledモジュールの製造方法
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
WO2015175369A1 (en) * 2014-05-10 2015-11-19 Sensor Electronic Technology, Inc. Packaging for ultraviolet optoelectronic device
US10147854B2 (en) 2014-05-10 2018-12-04 Sensor Electronic Technology, Inc. Packaging for ultraviolet optoelectronic device
CN104091860B (zh) * 2014-07-01 2017-01-11 东莞市万丰纳米材料有限公司 Led封装光源及其生产工艺
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
JP2016046491A (ja) * 2014-08-26 2016-04-04 信越化学工業株式会社 光半導体装置の封止方法及び該封止方法によって製造された光半導体装置
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
ES2745048T3 (es) * 2015-07-30 2020-02-27 Green Theme Tech Inc Proceso hiperbárico para la aplicación y curado de un tratamiento orgánico polimerizable
CN105318200A (zh) * 2015-10-12 2016-02-10 深圳万城节能股份有限公司 发光单元的制造方法
JP2017183856A (ja) * 2016-03-29 2017-10-05 京セラ株式会社 水晶発振器
CN106252243A (zh) * 2016-09-09 2016-12-21 深圳连硕三悠自动化科技有限公司 一种用于球头型半导体元器件封装的装置及方法
CN106531865B (zh) * 2016-10-24 2019-06-21 东莞市国瓷新材料科技有限公司 一种紫外led封装用的围坝陶瓷基板制备方法
US12191427B2 (en) * 2018-02-05 2025-01-07 Lg Innotek Co., Ltd. Semiconductor device package and light emitting device comprising same
US11419221B2 (en) 2018-05-02 2022-08-16 Eleadtk Co., Ltd. Method of forming protective film on at least one electronic module
JP6998362B2 (ja) * 2019-05-16 2022-01-18 住友化学株式会社 電子部品及びその製造方法
WO2020230716A1 (ja) * 2019-05-16 2020-11-19 住友化学株式会社 電子部品の製造方法および電子部品
CN113853690A (zh) * 2019-05-16 2021-12-28 住友化学株式会社 电子部件和其制造方法
CN110491295B (zh) * 2019-08-26 2020-07-17 苹果公司 织物覆盖的电子设备中的显示器
JP6856787B1 (ja) * 2020-01-29 2021-04-14 住友化学株式会社 電子部品の製造方法
CN114046697B (zh) * 2021-08-02 2023-09-19 北京信息科技大学 炮弹船尾及炮弹船尾的装配方法
JP7644489B2 (ja) * 2021-08-04 2025-03-12 アピックヤマダ株式会社 圧縮成形装置及び圧縮成形方法
KR102742159B1 (ko) * 2023-05-12 2024-12-12 한국과학기술원 전자 패키지 몰딩 장치와 몰딩 방법 및 이를 이용하여 제작된 전자 패키지

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445952A (en) 1981-11-03 1984-05-01 Trw Inc. Apparatus and method for filling holes in a circuit board
JPS5896785A (ja) 1981-12-04 1983-06-08 Stanley Electric Co Ltd 発光ダイオ−ドの合成樹脂レンズ成形方法
JPS58165333A (ja) * 1982-03-26 1983-09-30 Toshiba Corp 半導体装置の製造方法
JPS61163644A (ja) * 1985-01-16 1986-07-24 Oki Electric Ind Co Ltd 半導体装置の封止方法と封止部材
JPS6245138A (ja) * 1985-08-23 1987-02-27 Sony Corp 電子部品装置の製法
JPS63193814A (ja) * 1987-02-06 1988-08-11 Nec Corp トランスフアモ−ルド金型
JPH0617032B2 (ja) 1988-10-18 1994-03-09 ソマール株式会社 物品の定形樹脂被覆方法
US4954297A (en) 1988-12-05 1990-09-04 The Mead Corporation Method and apapratus for forming a matte finish on resin-coated webs or sheets
US5407505A (en) 1990-11-14 1995-04-18 Alliedsignal Inc. Method of encapsulating temperature sensitive devices in wax-like material having a high coefficient of fusion
US5391346A (en) 1991-11-20 1995-02-21 Rohm Co., Ltd. Method for making molded photointerrupters
JP3059560B2 (ja) 1991-12-25 2000-07-04 株式会社日立製作所 半導体装置の製造方法およびそれに使用される成形材料
DE4242842C2 (de) * 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020079087A (ko) * 2001-04-13 2002-10-19 주식회사한영전자 표시등의 발광다이오드 보호 구조
KR100821436B1 (ko) * 2004-04-05 2008-04-10 닛토덴코 가부시키가이샤 광반도체 소자 캡슐화용 시이트 및 상기 시이트를 이용한광반도체 장치의 제조방법

Also Published As

Publication number Publication date
JPH0845972A (ja) 1996-02-16
JP2994219B2 (ja) 1999-12-27
EP0684648B1 (en) 2000-09-13
KR950034859A (ko) 1995-12-28
DE69518793D1 (de) 2000-10-19
EP0684648A2 (en) 1995-11-29
EP0684648A3 (https=) 1995-12-27
MY114173A (en) 2002-08-30
US5635115A (en) 1997-06-03
DE69518793T2 (de) 2001-02-08
CN1119343A (zh) 1996-03-27
CN1100347C (zh) 2003-01-29

Similar Documents

Publication Publication Date Title
KR0180931B1 (ko) 반도체 디바이스의 제조방법
EP1864780B1 (en) Apparatus and method for manufacturing a light emitting unit
JP5407007B2 (ja) 発光デバイスの製造方法
EP3664167B1 (en) Light emitting diode
CN1264331A (zh) 智能卡的制造方法
JP5473609B2 (ja) レンズを有するledデバイス及びその作製方法
TWI440211B (zh) 電子裝置之製造方法
KR101219106B1 (ko) 발광소자 패키지 및 그 제조방법
US20090020774A1 (en) Package of light emitting diode and method for manufacturing the same
KR20180121966A (ko) 발광 다이오드 및 그 장치에 형광체를 도포하기 위한 방법
JP2001506060A (ja) 基板上へ直接的に電子装置を射出成形封止
JP2008205462A (ja) フロントコンタクトを有するパッケージ化された半導体発光デバイスを圧縮成形により形成する方法
JP2011109134A (ja) 複数の光学要素を有するパッケージ化された半導体発光デバイスを圧縮成形により形成する方法
JP2009051107A (ja) 光素子の樹脂封止成形方法及び装置
JP2001505329A (ja) メモリカード実現方法の改良とそれによって得られるカード
KR101202169B1 (ko) 다중 몰딩부재를 갖는 발광 다이오드 패키지 제조방법
KR20070105640A (ko) 발광다이오드 및 그 제조방법
Ait Mani et al. Innovative process development for LEDs dome shaping without molding

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

FPAY Annual fee payment

Payment date: 20121121

Year of fee payment: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

FPAY Annual fee payment

Payment date: 20131118

Year of fee payment: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20141205

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20141205

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000