KR0148325B1 - 반도체 소자의 금속 배선 형성방법 - Google Patents

반도체 소자의 금속 배선 형성방법 Download PDF

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Publication number
KR0148325B1
KR0148325B1 KR1019950004447A KR19950004447A KR0148325B1 KR 0148325 B1 KR0148325 B1 KR 0148325B1 KR 1019950004447 A KR1019950004447 A KR 1019950004447A KR 19950004447 A KR19950004447 A KR 19950004447A KR 0148325 B1 KR0148325 B1 KR 0148325B1
Authority
KR
South Korea
Prior art keywords
titanium nitride
nitride film
film
forming
titanium
Prior art date
Application number
KR1019950004447A
Other languages
English (en)
Korean (ko)
Other versions
KR960035843A (ko
Inventor
조경수
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950004447A priority Critical patent/KR0148325B1/ko
Priority to GB9604614A priority patent/GB2298657B/en
Priority to CN96104048A priority patent/CN1057868C/zh
Priority to DE19608208A priority patent/DE19608208B4/de
Priority to TW085102622A priority patent/TW288171B/zh
Priority to JP8070955A priority patent/JPH08250596A/ja
Publication of KR960035843A publication Critical patent/KR960035843A/ko
Application granted granted Critical
Publication of KR0148325B1 publication Critical patent/KR0148325B1/ko
Priority to JP11290109A priority patent/JP3122845B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019950004447A 1995-03-04 1995-03-04 반도체 소자의 금속 배선 형성방법 KR0148325B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019950004447A KR0148325B1 (ko) 1995-03-04 1995-03-04 반도체 소자의 금속 배선 형성방법
GB9604614A GB2298657B (en) 1995-03-04 1996-03-04 Methods of forming metal interconnects in semiconductor devices
CN96104048A CN1057868C (zh) 1995-03-04 1996-03-04 形成半导体器件金属互连的方法
DE19608208A DE19608208B4 (de) 1995-03-04 1996-03-04 Verfahren zur Herstellung von Metallzwischenverbindungen in Halbleitereinrichtungen
TW085102622A TW288171B (zh) 1995-03-04 1996-03-04
JP8070955A JPH08250596A (ja) 1995-03-04 1996-03-04 半導体装置の金属配線形成方法
JP11290109A JP3122845B2 (ja) 1995-03-04 1999-10-12 半導体装置の金属配線形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950004447A KR0148325B1 (ko) 1995-03-04 1995-03-04 반도체 소자의 금속 배선 형성방법

Publications (2)

Publication Number Publication Date
KR960035843A KR960035843A (ko) 1996-10-28
KR0148325B1 true KR0148325B1 (ko) 1998-12-01

Family

ID=19409231

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950004447A KR0148325B1 (ko) 1995-03-04 1995-03-04 반도체 소자의 금속 배선 형성방법

Country Status (6)

Country Link
JP (2) JPH08250596A (zh)
KR (1) KR0148325B1 (zh)
CN (1) CN1057868C (zh)
DE (1) DE19608208B4 (zh)
GB (1) GB2298657B (zh)
TW (1) TW288171B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480576B1 (ko) * 1997-12-15 2005-05-16 삼성전자주식회사 반도체장치의금속배선형성방법
KR100494320B1 (ko) * 1997-12-30 2005-08-31 주식회사 하이닉스반도체 반도체소자의확산방지막형성방법

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430684B1 (ko) * 1996-12-31 2004-07-30 주식회사 하이닉스반도체 반도체소자의금속배선형성방법
JP3040715U (ja) * 1997-02-19 1997-08-26 株式会社熊谷 包装袋
KR100559028B1 (ko) * 1998-12-29 2006-06-15 주식회사 하이닉스반도체 반도체 소자의 구리 배선 형성 방법
KR100495856B1 (ko) * 1998-12-30 2005-09-02 주식회사 하이닉스반도체 반도체 소자의 구리 금속 배선 형성 방법
JP3562628B2 (ja) * 1999-06-24 2004-09-08 日本電気株式会社 拡散バリア膜、多層配線構造、およびそれらの製造方法
US6569751B1 (en) * 2000-07-17 2003-05-27 Lsi Logic Corporation Low via resistance system
DE10154500B4 (de) * 2001-11-07 2004-09-23 Infineon Technologies Ag Verfahren zur Herstellung dünner, strukturierter, metallhaltiger Schichten mit geringem elektrischen Widerstand
JP4683188B2 (ja) 2002-11-29 2011-05-11 日本電気株式会社 半導体装置およびその製造方法
JP4222841B2 (ja) * 2003-01-15 2009-02-12 三洋電機株式会社 半導体装置の製造方法
TW200526806A (en) * 2004-01-15 2005-08-16 Tokyo Electron Ltd Film-forming method
US7253501B2 (en) * 2004-08-03 2007-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. High performance metallization cap layer
US20060113675A1 (en) * 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
JP5204964B2 (ja) * 2006-10-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN101017793B (zh) * 2007-02-16 2013-06-05 上海集成电路研发中心有限公司 一种扩散阻挡层的制作方法
CN101459174B (zh) * 2007-12-13 2010-07-07 和舰科技(苏州)有限公司 一种半导体晶片的导电结构及其制造方法
CN102810504A (zh) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 厚铝生长工艺方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0174743A3 (en) * 1984-09-05 1988-06-08 Morton Thiokol, Inc. Process for transition metal nitrides thin film deposition
EP0209654B1 (en) * 1985-05-13 1994-12-14 Kabushiki Kaisha Toshiba Semiconductor device having wiring electrodes
US4998157A (en) * 1988-08-06 1991-03-05 Seiko Epson Corporation Ohmic contact to silicon substrate
EP0448763A1 (de) * 1990-03-30 1991-10-02 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Herstellung von leitenden Schichten oder Strukturen für höchstintegrierte Schaltungen
US5136362A (en) * 1990-11-27 1992-08-04 Grief Malcolm K Electrical contact with diffusion barrier
EP0514103A1 (en) * 1991-05-14 1992-11-19 STMicroelectronics, Inc. Barrier metal process for sub-micron contacts
US5242860A (en) * 1991-07-24 1993-09-07 Applied Materials, Inc. Method for the formation of tin barrier layer with preferential (111) crystallographic orientation
US5308655A (en) * 1991-08-16 1994-05-03 Materials Research Corporation Processing for forming low resistivity titanium nitride films
US5462895A (en) * 1991-09-04 1995-10-31 Oki Electric Industry Co., Ltd. Method of making semiconductor device comprising a titanium nitride film
JPH05121378A (ja) * 1991-10-29 1993-05-18 Sony Corp 半導体装置の製造方法
US5254499A (en) * 1992-07-14 1993-10-19 Micron Technology, Inc. Method of depositing high density titanium nitride films on semiconductor wafers
JP2570576B2 (ja) * 1993-06-25 1997-01-08 日本電気株式会社 半導体装置の製造方法
US5494860A (en) * 1995-03-14 1996-02-27 International Business Machines Corporation Two step annealing process for decreasing contact resistance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480576B1 (ko) * 1997-12-15 2005-05-16 삼성전자주식회사 반도체장치의금속배선형성방법
KR100494320B1 (ko) * 1997-12-30 2005-08-31 주식회사 하이닉스반도체 반도체소자의확산방지막형성방법

Also Published As

Publication number Publication date
CN1141506A (zh) 1997-01-29
DE19608208B4 (de) 2006-02-23
KR960035843A (ko) 1996-10-28
GB2298657A (en) 1996-09-11
GB9604614D0 (en) 1996-05-01
DE19608208A1 (de) 1996-09-05
TW288171B (zh) 1996-10-11
JPH08250596A (ja) 1996-09-27
JP2000082742A (ja) 2000-03-21
JP3122845B2 (ja) 2001-01-09
CN1057868C (zh) 2000-10-25
GB2298657B (en) 1998-09-30

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