JPWO2015151273A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2015151273A1 JPWO2015151273A1 JP2016511284A JP2016511284A JPWO2015151273A1 JP WO2015151273 A1 JPWO2015151273 A1 JP WO2015151273A1 JP 2016511284 A JP2016511284 A JP 2016511284A JP 2016511284 A JP2016511284 A JP 2016511284A JP WO2015151273 A1 JPWO2015151273 A1 JP WO2015151273A1
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- lead frame
- semiconductor device
- scale
- mold resin
- metal plating
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Abstract
Description
この発明の上記以外の目的、特徴、観点及び効果は、図面を参照する以下のこの発明の詳細な説明から、さらに明らかになるであろう。
以下に、本発明の実施の形態1に係る半導体装置について、図面に基づいて説明する。図1に、本実施の形態1に係る樹脂モールド型の半導体装置の構造の一例を示す。本実施の形態1に係る半導体装置100は、半導体素子1、リードフレーム2、ワイヤ5、インナーリード6、および外部端子7等を含んで構成される。なお、以下の全ての図において、図中、同一、相当部分には同一符号を付している。
本発明の実施の形態2に係る半導体装置の全体構成は、上記実施の形態1と同様であるので図1を流用し、各部の説明を省略する。図15は、本実施の形態2に係る半導体装置100における鱗状部3aを示す上面図であり、図16は、図15に示すC−Cの部分で切断した断面図である。
本発明の実施の形態3では、上記実施の形態1に係る半導体装置100とは構成の異なる半導体装置に鱗状部3を適用した例について説明する。図17は、本実施の形態3に係る半導体装置101を示している。半導体装置101は、リードフレーム2の離間された二つの領域の間を跨ぐようにブリッジ実装された電子部品10を備えている。電子部品10は、コンデンサやサーミスタ等である。
Claims (10)
- 半導体素子を搭載するリードフレームと、前記リードフレームの少なくとも前記半導体素子を搭載した面を封止するモールド樹脂を備えた半導体装置であって、
前記リードフレームは、その表面を部分的または全体的に金属めっきで被覆されると共に、前記モールド樹脂により封止される領域内に、前記金属めっきの表面形状を鱗状に変形させた鱗状部を有することを特徴とする半導体装置。 - 前記鱗状部は、任意の直線上または曲線上に所定幅で配置されることを特徴とする請求項1記載の半導体装置。
- 前記鱗状部は、前記所定幅の中央部付近において、前記金属めっきの下の前記リードフレームが露出していることを特徴とする請求項2記載の半導体装置。
- 前記モールド樹脂による封止の際に用いられる成形金型は、溶融された前記モールド樹脂の通り道であるゲートを有し、前記鱗状部は、前記リードフレームの前記ゲートに近接する箇所に配置されることを特徴とする請求項1から請求項3のいずれか一項に記載の半導体装置。
- 前記モールド樹脂による封止の際に用いられる成形金型は、溶融された前記モールド樹脂の通り道であるゲートを有し、前記鱗状部は、前記リードフレームの前記ゲートから最も直線距離が長い箇所の付近に配置されることを特徴とする請求項1から請求項4のいずれか一項に記載の半導体装置。
- 前記鱗状部は、前記リードフレームの前記モールド樹脂により封止される領域内の外周部に配置されることを特徴とする請求項1から請求項5のいずれか一項に記載の半導体装置。
- 前記鱗状部は、前記リードフレームの前記半導体素子を搭載した箇所の周囲に配置されることを特徴とする請求項1から請求項6のいずれか一項に記載の半導体装置。
- 前記半導体素子と前記リードフレームの所定の箇所とを電気的に接続するワイヤを有し、前記鱗状部は、前記リードフレームの前記ワイヤとの接続部を除く領域に配置されることを特徴とする請求項1から請求項7のいずれか一項に記載の半導体装置。
- 前記リードフレームの離間された二つの領域を跨ぐようにブリッジ実装された電子部品を有し、前記鱗状部は、前記リードフレームの前記電子部品を搭載した箇所の周囲に配置されることを特徴とする請求項1から請求項8のいずれか一項に記載の半導体装置。
- 前記鱗状部は、前記リードフレームにレーザーを照射することにより前記金属めっきを変形させたものであることを特徴とする請求項1から請求項9のいずれか一項に記載の半導体装置。
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CN108701661A (zh) * | 2016-03-07 | 2018-10-23 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP6561331B2 (ja) * | 2016-03-30 | 2019-08-21 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JP6485397B2 (ja) * | 2016-04-04 | 2019-03-20 | 株式会社デンソー | 電子装置及びその製造方法 |
JP6485398B2 (ja) * | 2016-04-13 | 2019-03-20 | 株式会社デンソー | 電子装置及びその製造方法 |
JP6733585B2 (ja) * | 2017-03-16 | 2020-08-05 | 株式会社デンソー | 半導体装置およびその製造方法 |
KR101862705B1 (ko) * | 2017-09-29 | 2018-05-30 | 제엠제코(주) | 음각 패턴이 형성된 반도체 패키지용 클립, 리드프레임 및 이를 포함하는 반도체 패키지 |
TWI746883B (zh) * | 2017-09-29 | 2021-11-21 | 韓商Jmj韓國有限公司 | 形成有陰刻圖案的半導體封裝用夾具、引線框架、基板及包括其的半導體封裝體 |
JP6742540B2 (ja) * | 2017-12-13 | 2020-08-19 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
JP6777063B2 (ja) * | 2017-12-20 | 2020-10-28 | 株式会社デンソー | 電子装置およびその製造方法 |
US10600725B2 (en) * | 2018-05-29 | 2020-03-24 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor module having a grooved clip frame |
WO2019229828A1 (ja) * | 2018-05-29 | 2019-12-05 | 新電元工業株式会社 | 半導体モジュール |
US10777489B2 (en) | 2018-05-29 | 2020-09-15 | Katoh Electric Co., Ltd. | Semiconductor module |
JP7090716B2 (ja) * | 2018-09-06 | 2022-06-24 | 三菱電機株式会社 | 半導体装置 |
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US10937744B2 (en) | 2019-02-22 | 2021-03-02 | Infineon Technologies Ag | Semiconductor packages including roughening features |
JP2021174883A (ja) * | 2020-04-24 | 2021-11-01 | Jx金属株式会社 | 金属板、金属樹脂複合体、および半導体ディバイス |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032775A (ja) * | 2004-07-20 | 2006-02-02 | Denso Corp | 電子装置 |
JP2010161098A (ja) * | 2009-01-06 | 2010-07-22 | Nichiden Seimitsu Kogyo Kk | リードフレームの製造方法及びリードフレーム、ヒートシンクの製造方法及びヒートシンク |
US20100320579A1 (en) * | 2009-06-22 | 2010-12-23 | Texax Instruments Incorporated | Metallic Leadframes Having Laser-Treated Surfaces for Improved Adhesion to Polymeric Compounds |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3748849B2 (ja) | 2002-12-06 | 2006-02-22 | 三菱電機株式会社 | 樹脂封止型半導体装置 |
EP1905077B1 (en) * | 2005-07-08 | 2012-05-23 | Nxp B.V. | Semiconductor device |
US8012886B2 (en) * | 2007-03-07 | 2011-09-06 | Asm Assembly Materials Ltd | Leadframe treatment for enhancing adhesion of encapsulant thereto |
WO2012049742A1 (ja) * | 2010-10-13 | 2012-04-19 | 日立オートモティブシステムズ株式会社 | 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法 |
JP5264939B2 (ja) | 2011-01-14 | 2013-08-14 | 新光電気工業株式会社 | パッケージ部品及び半導体パッケージ |
JP5083472B1 (ja) * | 2012-01-25 | 2012-11-28 | パナソニック株式会社 | Ledパッケージの製造方法 |
JP5863174B2 (ja) * | 2012-03-01 | 2016-02-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6102187B2 (ja) * | 2012-10-31 | 2017-03-29 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを用いた発光装置 |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032775A (ja) * | 2004-07-20 | 2006-02-02 | Denso Corp | 電子装置 |
JP2010161098A (ja) * | 2009-01-06 | 2010-07-22 | Nichiden Seimitsu Kogyo Kk | リードフレームの製造方法及びリードフレーム、ヒートシンクの製造方法及びヒートシンク |
US20100320579A1 (en) * | 2009-06-22 | 2010-12-23 | Texax Instruments Incorporated | Metallic Leadframes Having Laser-Treated Surfaces for Improved Adhesion to Polymeric Compounds |
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