JP5863174B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5863174B2 JP5863174B2 JP2012045115A JP2012045115A JP5863174B2 JP 5863174 B2 JP5863174 B2 JP 5863174B2 JP 2012045115 A JP2012045115 A JP 2012045115A JP 2012045115 A JP2012045115 A JP 2012045115A JP 5863174 B2 JP5863174 B2 JP 5863174B2
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- Prior art keywords
- plating
- lead frame
- semiconductor device
- lead
- sealing resin
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
Cu系やFe系リードフレームにZn、Cu、Ni等を粗化めっきし、さらに被覆層を形成する方法において、粗化めっきの材質によって次のような問題点がある。その結果、耐湿性や耐熱衝撃性に優れた樹脂封止型半導体装置を提供するのが難しいという問題がめっき粗化法にある。
一方のエッチングによる粗化法は、次のような問題がある。
以下、図面を参照しながら、実施の形態について詳細に説明する。
(1)構成・方法
図1は、実施の形態1に係る半導体装置の製造方法を示す工程フロー図及び対応する概略断面図である。
最初に組立工程で使用する金属部材を準備する工程について説明する。図1(A)に示すように、所定形状に加工され外部接続端子を有する基材1を用意する(工程S11)。ここで、基材1は例えばリードフレーム等である。
次に半導体装置の組立方法について説明する。金属部材1aと半導体素子を準備する(工程S15、S16)。そして、金属部材1aのZn膜4が形成されない所定領域(不図示)に前記半導体素子(不図示)を接着する(工程S17)。前記所定領域は半導体接着部であり、ダイパッド又はタブ等である。ダイボンド材料としては、例えば、高融点はんだ、焼結Agペースト、樹脂接着Agペースト等を用いる。ここで、ダイボンド材料とは半導体素子を半導体素子接着部に接着する材料である。前記半導体素子の電極(不図示)と金属部材1aの外部接続端子とを導体により電気的に接続する(工程S18)。導体としては、例えばボンディングワイヤ(不図示)又はリボン(不図示)を使用する。前記半導体素子の電極は、例えばAl等で形成している。ボンディングワイヤ材は、例えばAlまたはAu等である。リボン材は、例えばAl等である。
次に、前記したオーバーハング構造の凹凸表面を有する合金層5が形成されるメカニズムを図1に基づき説明する。
次に、実施の形態1で記載した凹凸のオーバーハング構造の定義について図2を用いて説明する。
次に、実施の形態1に係る半導体装置の製造方法の実験結果を図3〜図11に基づき述べる。
以上のように、金属部材表面にオーバーハング構造を有する複数の凹凸を持つZnを含む層を形成したことにより、封止工程で接着された封止樹脂が、金属部材の凹部に浸入して密着性の良好な界面が形成される。封止樹脂と金属部材との機械的アンカー効果によって強固な接着部が得られる。
部材であっても、高い信頼性の半導体装置を提供できるものである。
図12は、実施の形態2に係る半導体装置の製造方法を示す工程フロー図である。図13〜図16は、図12に示す工程フローの一工程を示す図である。図13はZn合金化処理前のリードフレームの一部を示している。同図(A)は平面図、同図(B)は同図(A)におけるa−a´で切断した断面図である。図14はリードフレームへのマスク冶具取り付け構造を示す図である。同図(A)は断面図、同図(B)は同図(A)をW方向から観察した側面図である。図15はマスク冶具を取り付けたリードフレームの電気Znめっき方法を示す図である。図16はマスク冶具による選択Znめっき前及びめっき、合金化処理後のリードフレーム外観を示す図である。同図(A)はめっき前のリードフレーム外観平面図、同図(B)はめっき、合金化処理化のリードフレーム外観平面図である。図17は、実施の形態2に係る半導体装置の製造方法により製造された半導体装置の平面図及び断面図である。同図(A)は半導体装置の封止樹脂の上部を除いた平面図で、同図(B)は同図(A)におけるa−a´で切断した断面図である。
最初に、組立工程で使用するリードフレームを準備する工程について説明する。図13(A)、(B)に記載するような、所定形状に加工され外部接続端子を有するリードフレーム21を準備する(工程S21)。ここで、リードフレーム21はダイパッド9とヘッダー10とダイパッド用リード端子11とを含む。また、リードフレーム21は主電極用ボンディングパッド12と主電極用リード端子13と制御電極用ボンディングパッド14と制御電極用リード端子15とを含む。さらにリードフレーム21はフレーム枠19と吊りリード20とを含む。ヘッダー10には貫通孔を有する。ダイパッド9とヘッダー10との間には封止樹脂固着溝16を有する。ダイパッド9にはダイパッド領域33をマスクする第1のマスキング領域17を有する。リードフレーム21はダイパッド用リード端子11の一部と主電極用ボンディングパッド12と主電極用リード端子13とをマスクする第2のマスキング領域18を有する。また、リードフレーム21は制御電極用ボンディングパッド14と制御電極用リード端子15とフレーム枠19とをマスクする第2のマスキング領域18を有する。
次に半導体装置の組立工程について説明する。Znを拡散し合金化処理されたリードフレーム21aと半導体素子34とを準備する(工程S25、工程S26)。ここで、半導体素子34は、例えば、MOSトランジスタやバイポーラトランジスタなどの半導体チップである。半導体素子34は主電極35と制御電極36と裏面電極36とを含む。主電極35は第1電極と、制御電極36は第2電極と、裏面電極37は第3電極ともいう。図17に示すように半導体素子34の裏面電極37をダイパッド9のダイパッド領域33上にダイボンド材料38によって接着する(工程S27)。ここで、ダイボンド材料38としては、高融点はんだ、焼結Agペースト、樹脂接着Agペースト等を使用することができる。
実施の形態2によれば、リードフレーム21のダイボンド領域33とワイヤやリボンをボンディングする領域12、14を除き、少なくとも封止樹脂41で封止される領域にZnめっきを施している。加熱処理によりZnとリードフレーム21の金属とのZn粗化合金層32a、32b、32c、32dを形成している。これらにより、封止樹脂41をモールドした後のリードフレーム21aと封止樹脂41の界面接着強度を大幅に向上できる。
図18は実施の形態3に係る半導体装置の製造方法を示す工程フロー図である。図19(A)〜(F)のそれぞれは、図18に示す工程フローに対応する平面図(左側)及び断面図(右側)であり、半導体装置一個分に該当する例である。
最初に、組立工程で使用するリードフレームを準備する工程について説明する。図19(A)に示すようにリードフレーム21bを用意する(工程S31)ここで、リードフレーム21bは、封止樹脂固着溝16を有しないことを除いて、リードフレーム21と同じである。
次に半導体装置の組立工程について説明する。Zn拡散合金化処理されたリードフレーム21cと半導体素子34を準備する(工程S36、工程S37)。半導体素子34は実施の形態2と同じ半導体チップを用いる。
実施形態3によれば、リードフレーム21のダイボンド領域33とワイヤやリボンをボンディングする領域12、14を除き、少なくとも封止樹脂41で封止される領域にZnめっきを施している。加熱処理によりZnとリードフレーム21の金属とのZn粗化合金層32b、32c、32dを形成している。これらにより、封止樹脂41をモールドした後のリードフレーム21bと封止樹脂41の界面接着強度を大幅に向上できる。すなわち、実施の形態3は、実施の形態1と実施の形態2と同様な効果を得ることができる。
図21は実施の形態4に係る半導体装置の製造方法を示し、各工程の平面図及び断面図である。同図(A)〜(F)のそれぞれは、左側は平面図、右側は断面図であり、半導体装置一個分に該当する例である。
図22は実施の形態5に係る半導体装置の製造方法を示す工程フロー図である。図23は、実施の形態5に係る半導体装置の製造方法に用いるリードフレームの平面図(A)、製造方法により製造された半導体装置の平面図(B)及び断面図(C)である。同図(B)は封止樹脂の上部を削除した平面図である。同図(C)は同図(B)におけるA−A´で切断した断面図である。
図24は実施の形態6に係る半導体装置の製造方法を示す工程フロー図である。図25は実施の形態6に用いるリードフレーム及び半導体装置の製造方法により製造された半導体装置である。同図(A)はリードフレームの平面図である。同図(B)リードフレームを加工した平面図である。同図(C)は封止樹脂の上部を削除した平面図である。同図(D)は同図(C)におけるa−a´で切断した断面図である。
図26は、実施の形態7に係る半導体装置の平面図及び断面図である。同図(A)は半導体装置の封止樹脂の上部を除いた平面図で、同図(B)は同図(A)におけるa−a´で切断した断面図である。
次に図27は実施の形態1〜7で用いられるリードフレーム表面のメタライズ仕様とダイボンド材と接続材等を適用する半導体デバイスごとにまとめたものである。同図に示した、デバイスとダイボンド材とLF表面とダイパッドと接続材とボンドパッドとの組合せは好ましい例を示している。
1a:金属部材
2:酸化膜
3:残存酸化膜
4:Zn膜
5:オーバーハング構造の凹凸表面を有する合金層
6:垂線
7:上部出っ張り部
8:凹み部
9:ダイパッド(第3パッド)
10:ヘッダー
11:ダイパッド用リード端子(第3リード端子)
12:主電極用ボンディングパッド(第1パッド)
13:主電極用リード端子(第1リード端子)
14:制御電極用ボンディングパッド(第2パッド)
15:制御電極用リード端子(第2リード端子)
16:封止樹脂固着溝
17:第1のマスキング領域
18:第2のマスキング領域
19:フレーム枠
20:吊りリード
21:リードフレーム
22:下押さえ冶具
23:上押さえ冶具
24:ゴムマスク1
25:ゴムマスク2
26:締め付け冶具1
27:締め付け冶具2
28:電源
29:電極
30:めっき液
31:容器
32、32a、32b、32c、32d、32e、32f、32g、32h、32i:Zn粗化合金層
33:ダイボンド領域
34:半導体素子
35:主電極(第1電極)
36:制御電極(第2電極)
37:裏面電極(第3電極)
38:ボンディング材料(接合部)
39:ボンディングワイヤ(主電極用)
40:ボンディングワイヤ(制御電極用)
41:封止樹脂
42:はんだめっき層
43a、43b、43c、43d、43e、43f:めっきレジスト
44:Znめっき膜
45:半導体装置
46:ダイボンド用Agめっきパッド(第3めっきパッド)
47:主電極用Agめっきパッド(第1めっきパッド)
48:制御電極用Agめっきパッド(第2めっきパッド)
49:主電極接続リード(第1接続リード)
50:Agめっき膜
51:制御電極接続リード(第2接続リード)
52:ボンディング材料(接合部)
53:半導体装置
54:半導体素子
55:タブ
56:Agペースト
57:リード接続用ボンディングワイヤ
58:リード
Claims (3)
- (a)外部接続端子を有する金属部材に半導体素子を接着する工程と、
(b)前記半導体素子の電極と前記金属部材の外部接続端子とを導体で接続する工程と、
(c)前記(b)工程の後に前記金属部材表面にZnめっきする工程と、
(d)前記Znめっきした金属部材を非酸化雰囲気又は還元雰囲気で加熱処理して前記Znと前記金属部材との合金化処理を行うことにより、オーバーハング構造を持つ複数の凹凸を有するZn合金層を形成する工程と、
(e)前記(d)工程の後に前記半導体素子と前記金属部材とをトランスファーモールド法により樹脂封止する工程と
を有する半導体装置の製造方法。 - 前記(a)工程の前に、前記金属部材の前記半導体素子を接着する領域をAgめっきする工程を有する請求項1に記載の半導体装置の製造方法。
- 前記(c)工程の前に、前記半導体素子の電極と前記導体との表面にZn置換めっきを行う工程を有する請求項1に記載の半導体装置の製造方法。
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JP2012045115A JP5863174B2 (ja) | 2012-03-01 | 2012-03-01 | 半導体装置の製造方法 |
US13/768,509 US9177833B2 (en) | 2012-03-01 | 2013-02-15 | Semiconductor device and method of manufacturing the same |
CN201710511943.4A CN107134415A (zh) | 2012-03-01 | 2013-03-01 | 半导体器件及其制造方法 |
CN201310065893.3A CN103295916B (zh) | 2012-03-01 | 2013-03-01 | 半导体器件及其制造方法 |
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US9607940B2 (en) * | 2013-07-05 | 2017-03-28 | Renesas Electronics Corporation | Semiconductor device |
CN106471617B (zh) * | 2014-04-04 | 2019-05-10 | 三菱电机株式会社 | 半导体装置 |
JP6561331B2 (ja) * | 2016-03-30 | 2019-08-21 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JP6686691B2 (ja) * | 2016-05-16 | 2020-04-22 | 株式会社デンソー | 電子装置 |
JP2017208434A (ja) * | 2016-05-18 | 2017-11-24 | Shプレシジョン株式会社 | リードフレームの製造方法 |
JP6774785B2 (ja) * | 2016-05-19 | 2020-10-28 | Shプレシジョン株式会社 | リードフレームおよびリードフレームの製造方法 |
JP2018056451A (ja) * | 2016-09-30 | 2018-04-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6931869B2 (ja) * | 2016-10-21 | 2021-09-08 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
JP6961337B2 (ja) * | 2016-11-25 | 2021-11-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN109937479B (zh) * | 2016-12-27 | 2023-01-13 | 古河电气工业株式会社 | 引线框材料及其制造方法以及半导体封装件 |
CN106985337B (zh) * | 2017-03-31 | 2019-01-11 | 维沃移动通信有限公司 | Usb舌片加工方法、usb舌片及移动终端 |
JP7016677B2 (ja) * | 2017-11-21 | 2022-02-07 | 新光電気工業株式会社 | リードフレーム、半導体装置、リードフレームの製造方法 |
WO2019181924A1 (ja) * | 2018-03-23 | 2019-09-26 | 古河電気工業株式会社 | リードフレーム材およびその製造方法、ならびにそれを用いた半導体パッケージ |
JP7502598B2 (ja) * | 2020-01-29 | 2024-06-19 | 日亜化学工業株式会社 | 半導体装置と半導体装置の製造方法 |
WO2021153243A1 (ja) * | 2020-01-31 | 2021-08-05 | パナソニックIpマネジメント株式会社 | 光半導体装置用パッケージ及び光半導体装置 |
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JPH0846116A (ja) | 1994-07-28 | 1996-02-16 | Mitsubishi Denki Metetsukusu Kk | リードフレーム及びその製造方法 |
JPH09148508A (ja) | 1995-11-29 | 1997-06-06 | Nippon Denkai Kk | 半導体装置用リードフレーム及びこれを用いた樹脂封止型半導体装置 |
JP2002299538A (ja) | 2001-03-30 | 2002-10-11 | Dainippon Printing Co Ltd | リードフレーム及びそれを用いた半導体パッケージ |
US7049683B1 (en) * | 2003-07-19 | 2006-05-23 | Ns Electronics Bangkok (1993) Ltd. | Semiconductor package including organo-metallic coating formed on surface of leadframe roughened using chemical etchant to prevent separation between leadframe and molding compound |
CN100347853C (zh) * | 2003-08-07 | 2007-11-07 | 富士通株式会社 | 引线框架及其制造方法以及半导体器件 |
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JP5032017B2 (ja) * | 2005-10-28 | 2012-09-26 | 株式会社東芝 | 半導体発光素子及びその製造方法並びに半導体発光装置 |
JP4644718B2 (ja) * | 2008-01-31 | 2011-03-02 | 株式会社日立製作所 | 金属/樹脂接着構造体及び樹脂封止型半導体装置とその製造方法 |
JP5555146B2 (ja) | 2010-12-01 | 2014-07-23 | 株式会社日立製作所 | 金属樹脂複合構造体及びその製造方法、並びにバスバ、モジュールケース及び樹脂製コネクタ部品 |
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CN103295916B (zh) | 2017-07-28 |
CN103295916A (zh) | 2013-09-11 |
US20130228907A1 (en) | 2013-09-05 |
US9177833B2 (en) | 2015-11-03 |
JP2013182978A (ja) | 2013-09-12 |
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