JP6961337B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6961337B2 JP6961337B2 JP2016229032A JP2016229032A JP6961337B2 JP 6961337 B2 JP6961337 B2 JP 6961337B2 JP 2016229032 A JP2016229032 A JP 2016229032A JP 2016229032 A JP2016229032 A JP 2016229032A JP 6961337 B2 JP6961337 B2 JP 6961337B2
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- JP
- Japan
- Prior art keywords
- plating layer
- semiconductor device
- sealing portion
- die pad
- bonding material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002184 metal Substances 0.000 claims description 21
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Description
本発明の一実施の形態の半導体装置を図面を参照して説明する。
図1は、本発明の一実施の形態である半導体装置PKGの上面図であり、図2は、半導体装置PKGの下面図(裏面図)であり、図3〜図6は、半導体装置PKGの平面透視図であり、図7は、半導体装置PKGの断面図であり、図8は、半導体装置PKGの一部を拡大した平面透視図(部分拡大平面透視図)である。
次に、上記図1〜図8に示される半導体装置PKGの製造工程(組立工程)について説明する。図9は、上記図1〜図8に示される半導体装置PKGの製造工程を示すプロセスフロー図である。図10〜図18は、半導体装置PKGの製造工程中の平面図または断面図である。図10〜図18のうち、図10、図12、図14および図16が平面図であり、図11、図13、図15、図17および図18が断面図であり、断面図としては、上記図7に相当する断面が示されている。
図19は、本発明者が検討した第1検討例の半導体装置(半導体パッケージ)PKG101の断面図であり、上記図7に相当する断面図が示されている。
本実施の形態の半導体装置PKGは、半導体チップCPと、半導体チップCPを搭載するチップ搭載部であるダイパッドDPと、複数のリードLDと、半導体チップCP、ダイパッドDPの少なくとも一部および複数のリードLDの少なくとも一部を封止する封止部MR(封止体)と、備えている。ダイパッドDPおよび複数のリードLDは、銅を主成分とする金属材料からなる。ダイパッドDPの上面DPaにはめっき層PL1が形成されており、めっき層PL1は、銀めっき層、金めっき層、または白金めっき層からなる。半導体チップCPは、ダイパッドDPの上面DPaのめっき層PL1上に接合材BD(第1接合材)を介して搭載されている。めっき層PL1は、封止部MRと接触しないように、接合材BDで覆われている。
封止部MRの密着性が相対的に低い箇所があれば、その箇所が起点となって封止部MRの剥離が進行する虞がある。このため、封止部MRの剥離を防ぐには、封止部MRの密着性が相対的に低い箇所があれば、それに対して対策を施すことが有効である。本実施の形態では、めっき層PL1全体を接合材BDで覆うことで、めっき層PL1と封止部MRとが接触しないようにしているため、めっき層PL1と封止部MRとの密着性を気にする必要はない。また、上述のように、接合材BDとして、導電性材料(好ましくは銀粒子のような金属粒子)と樹脂材料とを含有する導電性接合材を用いるか、あるいは、焼結金属(好ましくは焼結銀)を用いることにより、接合材BDと封止部MRとの密着性を高くすることができる。このため、封止部MRの剥離を防ぐためのめっき層PL1と接合材BDとに対する対策は施されている。従って、めっき層PL1が形成されていない領域のダイパッドDPの表面と封止部MRとの密着性を向上できれば、封止部MRの剥離を防ぐ効果は、更に高まることになる。
BW ワイヤ
CC 回路形成領域
CP 半導体チップ
DP,DP101,DP201 ダイパッド
DPa 上面
DPb 下面
LD リード
LF リードフレーム
MR 封止部
MRa 上面
MRb 下面
PD パッド電極
PKG,PKG1,PKG101,PKG201 半導体装置
PL1,PL1a,PL2,PL201 めっき層
TL 吊りリード
Claims (8)
- 半導体チップと、
前記半導体チップが搭載された主面、および前記主面と反対側の裏面を有するチップ搭載部と、
複数のリードと、
前記半導体チップ、前記チップ搭載部の少なくとも一部、および前記複数のリードの少なくとも一部、を封止する封止体と、
を備える半導体装置であって、
前記チップ搭載部および前記複数のリードは、銅を主成分とする金属材料からなり、
前記チップ搭載部の前記裏面は、前記封止体から露出されており、
前記チップ搭載部の前記主面には、めっき層が形成されており、
前記めっき層は、銀めっき層、金めっき層、または白金めっき層からなり、
前記半導体チップは、前記チップ搭載部の前記主面の前記めっき層上に、第1接合材を介して搭載されており、
前記めっき層は、前記封止体と接触しないように、前記第1接合材で覆われており、
平面視において、前記半導体チップは前記めっき層に内包されている、半導体装置。 - 請求項1記載の半導体装置において、
前記第1接合材は、導電性材料と樹脂材料とを含有する導電性接合材からなる、半導体装置。 - 請求項1記載の半導体装置において、
前記第1接合材は、焼結金属からなる、半導体装置。 - 請求項1記載の半導体装置において、
前記半導体チップの複数のパッド電極と前記複数のリードとを電気的に接続する複数のワイヤを更に有し、
前記封止体は、前記複数のワイヤを封止している、半導体装置。 - 請求項1記載の半導体装置において、
前記チップ搭載部の前記主面のうち、前記めっき層が形成されていない第1領域の表面粗さは、前記めっき層の表面粗さよりも粗い、半導体装置。 - 請求項5記載の半導体装置において、
前記チップ搭載部の前記主面のうち、前記めっき層が形成されていない前記第1領域の表面粗さは、前記複数のリードのうち、前記封止体から露出する第2領域の表面粗さよりも粗い、半導体装置。 - 請求項1記載の半導体装置において、
前記チップ搭載部の前記封止体に接する領域は、粗面化されている、半導体装置。 - 請求項1記載の半導体装置において、
前記めっき層は銀めっき層である、半導体装置。
Priority Applications (4)
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JP2016229032A JP6961337B2 (ja) | 2016-11-25 | 2016-11-25 | 半導体装置 |
US15/715,544 US10522446B2 (en) | 2016-11-25 | 2017-09-26 | Semiconductor device and manufacturing method of the same |
CN201711058025.7A CN108109927B (zh) | 2016-11-25 | 2017-11-01 | 半导体器件及其制造方法 |
HK18111608.1A HK1252326A1 (zh) | 2016-11-25 | 2018-09-10 | 半導體器件及其製造方法 |
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JP2016229032A JP6961337B2 (ja) | 2016-11-25 | 2016-11-25 | 半導体装置 |
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JP6961337B2 true JP6961337B2 (ja) | 2021-11-05 |
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US (1) | US10522446B2 (ja) |
JP (1) | JP6961337B2 (ja) |
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JP2019083295A (ja) * | 2017-10-31 | 2019-05-30 | トヨタ自動車株式会社 | 半導体装置 |
US10763195B2 (en) * | 2018-03-23 | 2020-09-01 | Stmicroelectronics S.R.L. | Leadframe package using selectively pre-plated leadframe |
DE112019003550T5 (de) * | 2018-07-12 | 2021-03-25 | Rohm Co., Ltd. | Halbleiterelement und halbleiterbauteil |
WO2020240866A1 (ja) * | 2019-05-31 | 2020-12-03 | Jx金属株式会社 | 半導体デバイス |
CN115244684A (zh) * | 2020-03-11 | 2022-10-25 | 罗姆股份有限公司 | 半导体器件 |
JP7506564B2 (ja) * | 2020-09-10 | 2024-06-26 | 新光電気工業株式会社 | リードフレーム、半導体装置及びリードフレームの製造方法 |
CN116982154A (zh) * | 2021-03-17 | 2023-10-31 | 罗姆股份有限公司 | 半导体器件 |
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JPH03149865A (ja) * | 1989-11-07 | 1991-06-26 | Matsushita Electron Corp | リードフレーム |
JPH0846116A (ja) | 1994-07-28 | 1996-02-16 | Mitsubishi Denki Metetsukusu Kk | リードフレーム及びその製造方法 |
JP4034073B2 (ja) * | 2001-05-11 | 2008-01-16 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2010171271A (ja) * | 2009-01-23 | 2010-08-05 | Renesas Technology Corp | 半導体装置およびその製造方法 |
WO2011010659A1 (ja) * | 2009-07-21 | 2011-01-27 | 日亜化学工業株式会社 | 導電性材料の製造方法、その方法により得られた導電性材料、その導電性材料を含む電子機器、および発光装置 |
KR101678054B1 (ko) * | 2010-06-28 | 2016-11-22 | 삼성전자 주식회사 | 반도체 패키지 및 그 반도체 패키지 제조방법 |
JP5353954B2 (ja) * | 2011-06-06 | 2013-11-27 | 大日本印刷株式会社 | 回路部材、及び半導体装置 |
JP5822656B2 (ja) * | 2011-10-31 | 2015-11-24 | 株式会社 日立パワーデバイス | 半導体装置及びその製造方法 |
JP5863174B2 (ja) * | 2012-03-01 | 2016-02-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5919087B2 (ja) * | 2012-05-10 | 2016-05-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
JP2014007363A (ja) * | 2012-06-27 | 2014-01-16 | Renesas Electronics Corp | 半導体装置の製造方法および半導体装置 |
JP5975911B2 (ja) | 2013-03-15 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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CN108109927A (zh) | 2018-06-01 |
CN108109927B (zh) | 2023-01-06 |
US10522446B2 (en) | 2019-12-31 |
US20180151479A1 (en) | 2018-05-31 |
HK1252326A1 (zh) | 2019-05-24 |
JP2018085480A (ja) | 2018-05-31 |
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