JPWO2011010659A1 - 導電性材料の製造方法、その方法により得られた導電性材料、その導電性材料を含む電子機器、および発光装置 - Google Patents
導電性材料の製造方法、その方法により得られた導電性材料、その導電性材料を含む電子機器、および発光装置 Download PDFInfo
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- JPWO2011010659A1 JPWO2011010659A1 JP2011523674A JP2011523674A JPWO2011010659A1 JP WO2011010659 A1 JPWO2011010659 A1 JP WO2011010659A1 JP 2011523674 A JP2011523674 A JP 2011523674A JP 2011523674 A JP2011523674 A JP 2011523674A JP WO2011010659 A1 JPWO2011010659 A1 JP WO2011010659A1
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- Prior art keywords
- conductive material
- silver
- silver particles
- resin
- light emitting
- Prior art date
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- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229910002007 uranyl nitrate Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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Abstract
Description
本発明に係る発光装置の一例を、図面を参照して説明する。図1は、発光装置を示す概略斜視図であり、図2は、発光装置を示す概略断面図である。
以下、説明の便宜のため、樹脂を含まない導電性材料用組成物を用いて、銀粒子が融着した導電性材料の接合状態について図面及び写真を用いて説明する。図3は、導電性材料(樹脂を含まない)の接合状態を示す模式図である。図3中、発光素子10のサファイア基板71には銀72がメタライズされている。銅を主成分とするリードフレーム75には銀メッキ74が施されている。サファイア基板71は導電性材料73を介してリードフレーム75に融着されている。銀72と導電性材料73とは融着され金属接合されており、また、導電性材料73と銀メッキ74とが融着され金属接合されている。
本発明において、銀粒子は、平均粒径(メジアン径)が1種類のものであっても、2種類以上のものを混合して用いてもよい。銀粒子が1種類の場合、平均粒径(メジアン径)が例えば0.1μm〜15μmであり、好ましくは0.1μm〜10μmであり、より好ましくは0.3μm〜5μmである。銀粒子を2種類以上混合する場合、平均粒径(メジアン径)が、例えば0.1μm〜15μmのものと、0.1μm〜15μmのものとの組み合わせ、好ましくは0.1μm〜15μmのものと、0.1μm〜10μmのものとの組み合わせ、より好ましくは0.1μm〜15μmのものと、0.3μm〜5μmのものとの組み合わせである。銀粒子を2種類以上混合する場合、平均粒径(メジアン径)が、0.1μm〜15μmのものの含有率は、例えば70重量%以上、好ましくは80重量%以上、より好ましくは90重量%以上である。これにより得られる導電性材料の電気抵抗値を小さくすることができる。銀粒子の平均粒径(メジアン径)は、レーザー方法により測定することができる。
熱硬化性樹脂は、特に限定するものではないが、エポキシ樹脂、シリコーン樹脂、シリコーン変性樹脂、シリコーン変成樹脂、ホルムアルデヒド樹脂、フェノール樹脂、メラミン樹脂、尿素樹脂、ベンゾグアナミン樹脂、不飽和ポリエステル樹脂、アルキド樹脂、ジアリルフタレート樹脂、ポリウレタン樹脂、熱硬化性ポリイミド等と高度に架橋を施した架橋型アクリル樹脂(例えば、架橋型ポリメチルメタクリレート樹脂)、架橋型ポリスチレン樹脂等より少なくとも一つ以上を選択することができる。ダイシェア強度や被着体との接着性が期待される用途では、熱硬化性樹脂としては、エポキシ樹脂、ポリウレタン樹脂が好ましく、長期耐熱性が必要な用途であれば、熱硬化性樹脂としては熱硬化性ポリイミドが好ましい。耐光性を必要とする用途では熱硬化性樹脂としては、シリコーン樹脂、架橋型アクリル樹脂が好ましい。なお、「硬化された熱硬化性樹脂」とは、前記熱硬化性樹脂に熱をかけて、完全に硬化したものである。その硬化方法としては、従来公知の任意の硬化方法を用いることができる。また、「半硬化された」とは、熱硬化性樹脂の硬化を中間段階で停止させることであり、更に硬化を進めることが可能な状態である。なお、「半硬化された熱硬化性樹脂」とは、その硬化過程において加熱により溶融可能な熱硬化性樹脂をいう。
熱可塑性樹脂は、特に限定するものではないが、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリ塩化ビニリデン、テフロン、ポリスチレン、ポリ酢酸ビニル、ABS樹脂、AS樹脂、アクリル樹脂、ポリアミド、ナイロン、ポリアセタール、ポリカーボネート、変性ポリフェニレンエーテル、ポリブチレンテレフタレート、ポリエチレンテレフタレート、グラスファイバー強化ポリエチレンテレフタレート、環状ポリオレフィン、ポリフェニレンスルファイド、ポリテトラフロロエチレン、ポリスルホン、ポリエーテルサルホン、非晶ポリアリレート、液晶ポリマー、ポリエーテルエーテルケトン、熱可塑性ポリイミド、ポリアミドイミド等の単重合体および共重合体から少なくとも一つ以上を選択することができる。前記熱可塑性樹脂としては、特にアクリル樹脂はラジカル重合で容易に種々の物性を付与した微粒子を作製することが可能であるため好ましい。
導電性材料組成物には、無機物フィラーを更に添加してもよい。無機物フィラーは、銀粒子の重量に対して0重量%より大きく80重量%以下で加えることができる。特に、前記無機物フィラーとしては、銀粒子の重量に対して20重量%以上80重量%以下含まれる無機物フィラーであることが好ましい。無機物フィラーを添加した場合であっても、得られる導電性材料の電気抵抗性は低く5.0×10-5Ω・cm以下であり、更には線膨張係数を銀より小さくすることができる。例えば、無機物フィラーを添加した場合、4.0×10-6〜5.0×10-5Ω・cmとなる導電性材料を提供することができる。前記無機物フィラーは、銀のコーティングが施されていることが好ましい。前記銀コーティングの膜厚は、前記無機物フィラーの粒子全体で粒径が0.1μm〜15μmとなるようすることさえできれば特に制限はないが、容易に調製可能な0.01μm〜1μmが好ましい。
導電性材料の製造方法においては、導電性材料用組成物は、沸点300℃以下の有機溶剤または水を更に含み、前記銀粒子と、前記熱硬化性樹脂若しくは前記熱可塑性樹脂とが前記有機溶剤または水中に浸漬していることが好ましい。前記有機溶剤の沸点は、より好ましくは150℃〜250℃である。このような沸点を有する有機溶剤を用いる場合、有機溶剤揮発による導電性材料用組成物の室温時粘度変化を抑制することができ作業性が良好であり、さらには加熱により前記有機溶剤または水を完全に揮発させることができる。前記有機溶剤または水は、銀粒子、熱硬化性樹脂、熱可塑性樹脂および、任意の無機物フィラー(好ましくは銀コーティングを施してなる線膨張係数が銀より小さい)間のなじみを良くし、銀粒子と銀との反応を促進することができる。本発明の導電性材料の製造方法において、銀粒子を有機溶剤または水中に浸漬することは、作業性を損なうことなく高度に銀粒子を充填することが可能であるため、加熱した後の導電性材料の体積収縮が少なく、好ましい。従って、得られる導電性材料の寸法を予測することが容易である。また、前記有機溶剤は、低級アルコール、または、低級アルコキシ、低級アルコキシで置換された低級アルコキシ、アミノおよびハロゲンからなる群から選択される1以上の置換基を有する低級アルコールを含むのが好ましい。このような有機溶剤は揮発性が高いため、導電性材料用組成物を加熱した後に、得られた導電性材料中の有機溶剤の残留を減らすことができるからである。
前記のように、前記導電性材料用組成物は、金属酸化物を更に含むのが好ましい。前記金属酸化物としては、例えば、酸化銀(例えばAgO、Ag2O、Ag2O3など)を用いることが好ましいが、亜塩素酸塩類(例えば、亜塩素酸カリウム、亜塩素酸ナトリウム、亜塩素酸銅など)、塩素酸塩類(例えば、塩素酸カリウム 、塩素酸バリウム、塩素酸カルシウム、塩素酸ナトリウム、塩素酸アンモニウムなど)、過塩素酸塩類(例えば、過塩素酸カリウム、過塩素酸ナトリウム、過塩素酸アンモニウムなど)、臭素酸塩類(例えば、臭素酸カリウム、臭素酸ナトリウム、臭素酸マグネシウムなど)、ヨウ素酸塩類(例えば、ヨウ素酸カリウム、ヨウ素酸ナトリウム、ヨウ素酸アンモニウムなど)、無機過酸化物(例えば、過酸化カリウム、過酸化ナトリウム、過酸化カルシウム、過酸化マグネシウム、過酸化バリウム、過酸化リチウムなど)、硝酸塩類(例えば、硝酸カリウム、硝酸ナトリウム、硝酸アンモニウム、硝酸ウラニル、硝酸カルシウム、硝酸銀、硝酸鉄(II)、硝酸鉄(III)、硝酸銅(II)、硝酸鉛(II)、硝酸バリウムなど)、過マンガン酸塩類(例えば、過マンガン酸カリウム、過マンガン酸アンモニウム、過マンガン酸ナトリウム、過マンガン酸亜鉛、過マンガン酸マグネシウム、過マンガン酸カルシウム、過マンガン酸バリウムなど)、重クロム酸塩類(例えば、重クロム酸アンモニウム、重クロム酸カリウムなど)、過ヨウ素酸塩類(例えば、過ヨウ素酸ナトリウムなど)、過ヨウ素酸類(例えば、メタ過ヨウ素酸など)、クロム酸化物類(例えば、三酸化クロムなど)、鉛酸化物類(例えば、二酸化鉛など)、ヨウ素の酸化物類、亜硝酸塩類(例えば、亜硝酸カリウム、亜硝酸ナトリウム、亜硝酸カルシウムなど)、次亜塩素酸塩類(例えば、次亜塩素酸カルシウムなど)、ペルオキソ二硫酸塩類(例えば、ペルオキソ二硫酸カリウム、ペルオキソ二硫酸ナトリウムなど)、ペルオキソほう酸塩類(例えば、ペルオキソほう酸カリウム、ペルオキソほう酸ナトリウム、ペルオキソほう酸アンモニウムなど)等も用いることができる。
本発明の導電性材料の製造方法において、加熱は、酸素、オゾン、大気雰囲気下で行うことが好ましいが、金属酸化物を更に含む導電性材料用組成物を用いる場合は、上述に加えて真空雰囲気下、非酸素雰囲気下で行うこともできる。前記加熱は、大気雰囲気下で加熱を行うのが製造コスト面よりも好ましい。ただし、リードフレーム、半導体素子等が実装される樹脂パッケージ他の周辺部材が酸化劣化起こしやすい場合は、加熱時の酸素濃度を周辺部材の酸化劣化を最小とするレベルまで制限してもよい。金属酸化物を更に含まない導電性材料用組成物を用いる場合には、酸素、オゾン、大気雰囲気下で加熱すれば、加熱の際に銀粒子の融着が促進され、好ましい。
本発明の方法により得られる導電性材料は、銀粒子が互いに融着されており、空隙率が2体積%〜80体積%である。前記空隙率は比重法により定量できる。このような導電性材料は、接合強度が高いという利点を有する。
上述の発光素子に代えて、下記のような発光素子を用いることもできる。図17は、異なる実施形態である発光装置を示す概略断面図である。図18は、異なる実施形態である発光装置を示す概略断面図である。
なお、発光素子は、その導電性材料と融着する面が、銀、銀の合金で被覆されていることが好ましいが、Pt、Ptの合金、Sn、Snの合金、金、金の合金、銅、銅の合金、Rh、Rhの合金等により、被覆されていてもよい。導電性材料塗布部分表面が銀を主体とするため、銀で被覆されていると、導電性材料塗布部分表面との融着性が良好だからである。また、これらの被覆は、メッキ、蒸着、スパッタ、塗布等により行うことができる。
発光装置や電子機器に用いられる配線基板としては、その表面に導電性材料用組成物を塗布することが可能であれば特に限定されない。例えば、酸化アルミニウム、窒化アルミニウム、酸化ジルコニウム、窒化ジルコニウム、酸化チタン、窒化チタンまたはこれらの混合物を含むセラミック基板、Cu、Fe、Ni、Cr、Al、Ag、Au、Tiまたはこれらの合金を含む金属基板、ガラスエポキシ基板、BTレジン基板、ガラス基板、樹脂基板、紙等が挙げられる。このような配線基板を用いることにより、耐熱性に優れるからである。また、この製造方法によれば、加熱温度が低温でも可能なため、熱硬化性樹脂や熱可塑性樹脂のような加熱に弱い配線基板も用いることができる。
また、本発明に係る電子機器は、本発明に係る製造方法により得られた導電性材料を含む電子機器であって、導電性材料が、電気配線、部品電極、ダイアタッチ接合材または微細バンプの材料として使用することができる電子機器である。導電性材料を用いることにより、得られる電子機器は、電気抵抗値が十分小さく経時変化が少ないという利点がある。また、得られる電子機器は、半導体素子であるシリコン、化合物半導体と熱的整合性が良好であり熱衝撃による接合部剥離の懸念のない信頼性が高いという利点がある。
参考例1−6において、銀粒子から得られた導電性材料のせん断強度を測定し、せん断強度に優れた銀粒子の粒子組成を求めた。用いた銀粒子は、以下のとおりである。製品名「AgC−239」(福田金属箔粉工業株式会社製)。「AgC−239」は平均粒径(メジアン径)が2.0〜3.2μm、比表面積が0.6〜0.9m2/gである。製品名「FHD」(三井金属鉱業株式会社製)。「FHD」は、平均粒径(メジアン径)が0.3μm、比表面積が2.54m2/gである。
平均粒径の異なる銀粒子を所定量混合した銀粉2gを、ジエチレングリコールモノブチルエーテル0.16g中に25℃で混合して導電性材料用組成物を得た。得られた導電性材料用組成物をアルミナ基板上の銀メッキ面にスタンピングし、サファイア基板の片面に銀がメタライズされた600μm×600μm×厚さ100μmの大きさの発光素子をアルミナ基板上に実装した。これを200℃の大気雰囲気下で加熱した。室温でアルミナ基板から発光素子を剥す方向にせん断力をかけ、剥離したときの強度をせん断強度(ダイシェア強度)として測定した。表1に銀粒子組成とダイシェア強度の測定結果を示す。
(発光素子の銀反射膜厚と銀融着後の剥離関係)
参考例7〜9は、InGaN青色発光層を有し、600μm×600μm×厚さ100μmの大きさを持つ発光素子を用いる。発光素子はサファイア基板上に半導体層を形成しており、サファイア基板の裏面へ銀反射膜を膜厚250nm、360nm、500nmとなるよう銀スパッタを施した。パッケージは、酸化チタンが含有された白色のエポキシ樹脂によりなるリードフレームを一体成形してなるものを用いた。パッケージは凹部を形成しており、凹部の側壁はリフレクターとして機能しており、白色のエポキシ樹脂により形成されており、凹部の底面はリードフレームが露出している。リードフレームは、銅合金の母材に銀メッキを施している。以下、実施例、参考例、比較例とも参考例7と同じパッケージを用いた。せん断強度が最大となる参考例3の銀粉組成の銀粉2gを、ジエチレングリコールモノブチルエーテル0.16g中に25℃で混合して導電性材料用組成物を得た。この導電性材料用組成物を、リードフレームの銀メッキ上にスタンピングし、発光素子を実装した。これを200℃の大気雰囲気下で加熱した。発光素子が実装されたパッケージを室温に戻した後、発光素子側から顕微鏡にて銀反射膜の部分的剥離(以降、剥離という)を目視確認した。更に発光素子の電極とリードフレームの電極とを金ワイヤーで配線し、シリコーン樹脂で封止し発光装置とした。この状態で通電を行い各発光装置からの光出力を測定した。表2に剥離発生率と光出力比を示す。
(各種透明基板裏面の銀反射膜の銀粒子融着後の剥離傾向)
600μm×600μm×厚さ100μmの二酸化珪素(SiO2)、酸化亜鉛(ZnO)、ガリウムナイトライド(GaN)、ガリウムリン(GaP)の4種類の発光素子の基板裏面へ銀反射膜を膜厚250nmとなるよう銀スパッタを施した。せん断強度が最大となる参考例3の銀粉組成の銀粉2gを、ジエチレングリコールモノブチルエーテル0.16g中に25℃で混合して導電性材料用組成物を得た。この導電性材料用組成物を、銅合金リードフレーム上の銀メッキ面にスタンピングし、各4種類の発光素子を実装した。これを200℃の大気雰囲気下で加熱した。発光素子が実装されたパッケージを室温に戻した後、発光素子側から顕微鏡にて銀反射膜の部分的剥離を目視確認した。更に発光素子の電極とリードフレームの電極とを金ワイヤーで配線し、シリコーン樹脂で封止し発光装置とした。この状態で通電を行い各発光装置からの光出力を測定した。表3に剥離発生率を示す。
(熱硬化性樹脂粒子添加による剥離改善効果、電気抵抗:銀粒子と硬化された熱硬化性樹脂とを含む導電性材料用組成物を用いた例)
表4に示すように、実施例1〜3、実施例4〜6、実施例10〜13、実施例14〜18において、熱硬化性樹脂の添加量が少ないほど、高いダイシェア強度を示していた。実施例7〜9では、検証範囲より更に低い添加量で同傾向を示すものと推測される。超音波ワイヤーボンディングによる安定した電気配線を施すためにはダイシェア強度が500gf程度は必要であると考えられる。
電気抵抗の測定法は以下のとおりである。
銀粒子と、銀粒子重量に対し所定重量%の熱硬化性樹脂粒子とを含む混合銀粉2gを、ジエチレングリコールモノブチルエーテル0.16g中に25℃で混合して導電性材料用組成物を得た。得られた導電性材料用組成物を、ガラス基板(厚み1mm)にスクリ−ン印刷法により厚み200μmに塗布した。導電性材料用組成物が塗布されたガラス基板を、200℃の大気雰囲気下で加熱した。得られた配線(導電性材料)を製品名「MCP−T600」(三菱化学株式会社製)を用い4端子法にて電気抵抗を測定した。
(熱可塑性樹脂粒子添加による剥離改善効果、電気抵抗:銀粒子と熱可塑性樹脂とを含む導電性材料用組成物を用いた例)
InGaN青色発光層を有し、600μm×600μm×厚さ100μmの大きさを持つ発光素子を用いた。発光素子はサファイア基板上に半導体層を形成しており、サファイア基板の裏面へ銀反射膜を膜厚250nmとなるよう銀スパッタを施した。せん断強度が最大となる参考例3の銀粉組成の銀粉2g、ジエチレングリコールモノブチルエーテル0.16g、および熱可塑性樹脂粒子(銀粒子重量に対し所定重量%添加)を含む導電性材料用組成物を、リードフレームの銀メッキ上にスタンピングし、発光素子を実装した。
電気抵抗の測定法は以下のとおりである。
銀粒子と、銀粒子重量に対し所定重量%の熱可塑性樹脂粒子とを含む混合銀粉2gを、ジエチレングリコールモノブチルエーテル0.16g中に25℃で混合して導電性材料用組成物を得た。得られた導電性材料用組成物を、ガラス基板(厚み1mm)にスクリ−ン印刷法により厚み200μmに塗布した。導電性材料用組成物が塗布されたガラス基板を、200℃の大気雰囲気下で加熱した。得られた配線(導電性材料)を製品名「MCP−T600」(三菱化学株式会社製)を用い4端子法にて電気抵抗を測定した。
(部分的に架橋された熱可塑性樹脂粒子添加による剥離改善効果、電気抵抗:銀粒子と部分的に架橋された熱可塑性樹脂とを含む導電性材料用組成物を用いた例)
InGaN青色発光層を有し、600μm×600μm×厚さ100μmの大きさを持つ発光素子を用いた。発光素子はサファイア基板上に半導体層を形成しており、サファイア基板の裏面へ銀反射膜を膜厚250nmとなるよう銀スパッタを施した。せん断強度が最大となる参考例3の銀粉組成の銀粉2g、ジエチレングリコールモノブチルエーテル0.16g、および部分的に架橋構造を有するよう調整した熱可塑性樹脂粒子(銀粒子重量に対し所定重量%添加)を含む導電性材料用組成物を、リードフレームの銀メッキ上にスタンピングし、発光素子を実装した。
実施例43〜48は、以下の方法で製造された部分架橋型ポリメチルメタクリレート樹脂粒子を使用した。
実施例43−48で使用した導電性材料の電気抵抗を確認した。
銀粒子と、銀粒子重量に対し所定重量%の部分架橋ポリメチルメタクリレートとを含む混合銀粉2gを、ジエチレングリコールモノブチルエーテル0.16g中に25℃で混合して導電性材料用組成物を得た。得られた導電性材料用組成物を、ガラス基板(厚み1mm)にスクリ−ン印刷法により厚み200μmに塗布した。導電性材料用組成物が塗布されたガラス基板を、200℃の大気雰囲気下で加熱した。得られた配線(導電性材料)を製品名「MCP−T600」(三菱化学株式会社製)を用い4端子法にて電気抵抗を測定した。
(熱硬化性樹脂粒子と熱可塑性樹脂粒子の同時添加による剥離改善効果、電気抵抗:銀粒子と硬化された熱硬化性樹脂と熱可塑性樹脂とを含む導電性材料用組成物を用いた例)
InGaN青色発光層を有し、600μm×600μm×厚さ100μmの大きさを持つ発光素子を用いた。発光素子はサファイア基板上に半導体層を形成しており、サファイア基板の裏面へ銀反射膜を膜厚250nmとなるよう銀スパッタを施した。せん断強度が最大となる参考例3の銀粉組成の銀粉2g、ジエチレングリコールモノブチルエーテル0.16g、および熱硬化性樹脂粒子と熱可塑性樹脂粒子(銀粒子重量に対し所定重量%添加)を含む導電性材料用組成物を、リードフレームの銀メッキ上にスタンピングし、発光素子を実装した。実施例49〜54は、表面実装型のパッケージ(日亜化学工業株式会社製、製品名「NS3W183」)を用いる。
実施例49〜51において用いた熱硬化性樹脂粒子は、架橋型ポリメチルメタクリレート樹脂粒子(綜研化学株式会社製、製品名「MX−180TA」平均粒径1.9μm、Tg130℃)、熱可塑性樹脂は、架橋型ポリスチレン樹脂粒子(綜研化学株式会社製、製品名「KSR−3」平均粒径3.3μm、Tg108℃)である。
電気抵抗の測定法は以下のとおりである。
銀粒子と、銀粒子重量に対し所定重量%の熱硬化性樹脂粒子と熱可塑性樹脂粒子とを含む混合銀粉2gを、ジエチレングリコールモノブチルエーテル0.16g中に25℃で混合して導電性材料用組成物を得た。得られた導電性材料用組成物を、ガラス基板(厚み1mm)にスクリ−ン印刷法により厚み200μmに塗布した。導電性材料用組成物が塗布されたガラス基板を、200℃の大気雰囲気下で加熱した。得られた配線(導電性材料)を製品名「MCP−T600」(三菱化学株式会社製)を用い4端子法にて電気抵抗を測定した。
(発光装置)
実施例55は、実施例15と同様の条件で作製した発光素子が実装されたパッケージにおいて、発光素子の電極とリードフレームの電極とを金ワイヤーで配線し、シリコーン樹脂で封止し発光装置とした。
比較例2は、発光素子を実装する導電性材料にフレーク状銀フィラー80wt%−エポキシ樹脂20wt%の銀ペーストを用いる以外は実施例55と同じ構成で発光装置とした。
(照明装置)
実施例57に係る照明装置について図面を用いて説明する。図21は、照明装置を示す概略斜視図である。図22は、照明装置を示す概略断面図である。
絶縁性高反射白色レジストインクで片面塗布されたアルミニウム基板110へ実施例47で使用した導電性材料用組成物をメタルマスクを用いてレジストインク面へ直接回路パターンを印刷した。これを200℃の大気雰囲気下に加熱して銀融着膜の回路パターン120を得た。ここへ実施例50で得られた発光装置100をはんだ付けにより実装した。フェニルシリコーンを主成分とする透光性シリコーンワニスで銀融着膜の回路パターンを含むアルミニウム基板片側全体を保護するため、300μm厚にコーティングを施し、保護膜130を形成した。次いで電源回路150を有する筐体140との電気的接続を行い、更に光拡散材161が含有されたドーム状の透光性拡散レンズ160を発光部直上へ設置し照明装置を得た。
<実施例58−64>
InGaN青色発光層を有し、600μm×600μm×厚さ100μmの大きさを持つ発光素子を用いた。発光素子はサファイア基板上に半導体層を形成しており、サファイア基板の裏面へ銀反射膜を膜厚250nmとなるよう銀スパッタを施した。せん断強度が最大となる参考例3の銀粉組成の銀粒子へ実施例43〜48で使用した部分架橋型ポリメチルメタクリレート樹脂粒子を銀粒子重量に対し所定重量%添加した導電性材料用組成物を、実施例57で用いた絶縁性高反射白色レジストインクで片面塗布されたアルミニウム基板の絶縁性高反射白色レジストインク上にスタンピングし、発光素子を実装した。
発光素子が実装されたアルミニウム基板を200℃の大気雰囲気下で加熱した。これを室温に戻した後、アルミニウム基板からダイスを剥す方向にせん断力をかけ剥離したときの強度をダイシェア強度として測定した。
10 発光素子
11 保護素子
20 パッケージ
21 リード
30 封止樹脂
40 導電性材料
50 ワイヤー
60 蛍光物質
71 サファイア基板
72 銀
73 導電性材料
74 銀メッキ
75 リードフレーム
80、90 基板
81、91 半導体
82 n側電極
83、93 p側電極
84、94 銀
85、95 緩衝部材
86、96 銀
87、97 リードフレーム
88、98 銀メッキ
89、99 導電性材料
100 発光装置
110 アルミニウム基板
120 回路パターン
130 保護膜
140 筐体
150 電源回路
160 レンズ
161 光拡散材
Claims (22)
- 硬化若しくは半硬化された熱硬化性樹脂、及び、熱可塑性樹脂の少なくともいずれか一方、並びに、銀粒子を含む導電性材料用組成物を加熱する工程を有する導電性材料の製造方法。
- 前記熱硬化性樹脂又は前記熱可塑性樹脂は、平均粒径が0.1μm以上10μm以下であることを特徴とする請求項1に記載の導電性材料の製造方法。
- 前記硬化された熱硬化性樹脂は、前記銀粒子の重量に対して添加量が0重量%より大きく5重量%以下であることを特徴とする請求項1又は2に記載の導電性材料の製造方法。
- 前記半硬化された熱硬化性樹脂は、前記銀粒子の重量に対して添加量が0重量%より大きく10重量%以下であることを特徴とする請求項1又は2に記載の導電性材料の製造方法。
- 前記熱可塑性樹脂は、前記銀粒子の重量に対して添加量が0重量%より大きく10重量%以下であることを特徴とする請求項1又は2に記載の導電性材料の製造方法。
- 前記硬化された熱硬化性樹脂は、ガラス転移温度(Tg)が−40℃以下若しくは100℃以上であることを特徴とする請求項1乃至3のいずれか一項に記載の導電性材料の製造方法。
- 前記半硬化された熱硬化性樹脂は、ガラス転移温度(Tg)が100℃以上であることを特徴とする請求項1又は2、4のいずれか一項に記載の導電性材料の製造方法。
- 前記熱可塑性樹脂は、ガラス転移温度(Tg)若しくは融点が100℃以上であることを特徴とする請求項1又は2、5のいずれか一項に記載の導電性材料の製造方法。
- 前記導電性材料用組成物は、沸点300℃以下の有機溶剤または水を更に含み、前記銀粒子と、前記熱硬化性樹脂若しくは前記熱可塑性樹脂とが、前記有機溶剤または水の中に浸漬されていることを特徴とする請求項1乃至8のいずれか一項に記載の導電性材料の製造方法。
- 前記有機溶剤は、低級アルコール、または、低級アルコキシ、低級アルコキシで置換された低級アルコキシ、アミノおよびハロゲンからなる群から選択される1以上の置換基を有する低級アルコールの少なくともいずれかを含むことを特徴とする請求項9に記載の導電性材料の製造方法。
- 前記導電性材料用組成物は、更に、金属酸化物を含むことを特徴とする請求項1乃至10のいずれか一項に記載の導電性材料の製造方法。
- 前記金属酸化物が、AgO、Ag2O及びAg2O3からなる群から選択される1つ以上であることを特徴とする請求項11に記載の導電性材料の製造方法。
- 前記加熱工程における加熱温度が、150℃〜400℃の範囲である請求項1乃至12のいずれか一項に記載の導電性材料の製造方法。
- 前記銀粒子は平均粒径(メジアン径)が1種類の場合、前記平均粒径(メジアン径)が0.1μm〜15μmである請求項1乃至13のいずれか一項に記載の導電性材料の製造方法。
- 前記銀粒子は、平均粒径(メジアン径)が2種類の混合物の場合、前記平均粒径(メジアン径)が0.1μm〜15μmの銀粒子と、0.1μm〜15μmの銀粒子との組み合わせである請求項1乃至13のいずれか一項に記載の導電性材料の製造方法。
- 融着された銀粒子中に平均粒径が0.1μm以上10μm以下の硬化された熱硬化性樹脂粉体が分散されている導電性材料。
- 融着された銀粒子中に半硬化された熱硬化性樹脂が溶着硬化されている導電性材料。
- 融着された銀粒子中に熱可塑性樹脂が溶着されている導電性材料。
- 前記導電性材料は、電気抵抗値が4.0×10-5Ω・cm以下であることを特徴とする請求項16乃至18に記載の導電性材料。
- 請求項16乃至19のいずれか一項に記載の導電性材料が、電気配線、部品電極、ダイアタッチ接合材または微細バンプの材料として使用されることを特徴とする電子機器。
- 請求項16乃至19のいずれか一項に記載の導電性材料が、配線基板又はリードフレームと、発光素子との接合材料として使用されることを特徴とする発光装置。
- 前記配線基板が、酸化アルミニウム、窒化アルミニウム、酸化ジルコニウム、窒化ジルコニウム、酸化チタン、窒化チタンまたはこれらの混合物を含むセラミック基板、Cu、Fe、Ni、Cr、Al、Ag、Au、Tiまたはこれらの合金を含む金属基板、ガラスエポキシ基板及びBTレジン基板からなる群から選択される少なくとも一つを含むことを特徴とする請求項21に記載の発光装置。
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CN102473485A (zh) | 2012-05-23 |
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US9011728B2 (en) | 2015-04-21 |
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