JPWO2010110252A1 - Mosfetおよびmosfetの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 66
- 238000010438 heat treatment Methods 0.000 description 35
- 239000012535 impurity Substances 0.000 description 18
- 238000000137 annealing Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002829 nitrogen Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
Description
まず、図3に示すように、基板準備工程(S10)を実施する。この工程においては、面方位{0001}に対するオフ角が50°以上65°以下、たとえば面方位(03−38)または(0−33−8)である面を主面とする導電型がn型のSiC基板を基板2として準備する。このような基板は、たとえば(0001)面を主面とするインゴットから(03−38)面または(0−33−8)面が主面として露出するように基板2を切り出すといった手法により得ることができる。この工程では、製造するMOSFET1のチャネル移動度を一層向上させる観点から、(0−33−8)面が主面の基板2を準備することが特に好ましい。また、この基板2としては、たとえば基板の比抵抗が0.02Ωcmといった基板を用いてもよい。
本発明例1、2のMOSFETは、基本的には図8に示す横型のMOSFET3を製造した。
比較例1のMOSFETは、本発明例1のMOSFETの製造方法と基本的には同様の構成を備えていたが、基板の主面が(0001)面であった点、窒素アニール工程(S50)を実施しなかった点、ゲート絶縁膜形成工程(S40)において、加熱温度を1300℃、加熱時間を20分の条件とした点において異なっていた。
比較例2のMOSFETは、本発明例1のMOSFETの製造方法と基本的には同様の構成を備えていたが、基板の主面が(0001)面であった点、ゲート絶縁膜形成工程(S40)において加熱温度を1300℃、加熱時間を30分とした点、窒素アニール工程(S50)において加熱温度を1300℃、加熱時間を60分とした点において異なっていた。
比較例3のMOSFETは、本発明例1のMOSFETの製造方法と基本的には同様の構成を備えていたが、基板の主面が(0001)面であった点、ゲート絶縁膜形成工程(S40)において加熱温度を1300℃、加熱時間を30分とした点、窒素アニール工程(S50)において加熱温度を1200℃、加熱時間を60分とした点において異なっていた。
本発明例1、2および比較例1〜3のMOSFETについて、移動度およびサブスレッショルドスロープを測定した。
(ここで、L:ゲート長、d:酸化膜厚、W:ゲート幅、ε:酸化膜の誘電率)
という式から、移動度のゲート電圧に対する最大値を求めた。
具体的には、まず、基板2として、本発明例1の基板準備工程(S10)と同様の基板を用いた。
(比較例4)
比較例4のMOSキャパシタは、本発明例3のMOSキャパシタの製造方法と基本的には同様の構成を備えていたが、ゲート絶縁膜形成工程(S40)において加熱温度を1200℃、加熱時間を30分とした点、窒素アニール工程(S50)を実施しなかった点において異なっていた。
比較例5のMOSキャパシタは、本発明例3のMOSキャパシタの製造方法と基本的には同様の構成を備えていたが、基板の主面が(0001)面であった点、窒素アニール工程(S50)において加熱温度を1300℃、加熱時間を60分とした点において異なっていた。
本発明例3、比較例4および5のMOSキャパシタについて、エネルギーと、界面準位密度とを測定した。なお、エネルギーとは、MOS界面(半導体層21と絶縁膜26との界面)の半導体層側における導電帯の底を基準とした、バンドギャップ内のエネルギーとした。
Claims (10)
- {0001}面に対しオフ角が50°以上65°以下である主面を有する炭化ケイ素基板(2)と、
前記炭化ケイ素基板(2)の前記主面上に形成された半導体層(21、31)と、
前記半導体層(21、31)の表面に接触するように形成された絶縁膜(26)とを備え、
サブスレッショルドスロープが0.4V/Decade以下である、MOSFET(1、3)。 - 前記半導体層(21、31)と、前記絶縁膜(26)との間に、窒素原子を含む領域をさらに備えた、請求の範囲第1項に記載のMOSFET(1、3)。
- 前記半導体層(21、31)と、前記絶縁膜(26)との界面から10nm以内の前記領域における窒素濃度の最大値が1×1021cm-3以上である、請求の範囲第2項に記載のMOSFET(1、3)。
- 前記半導体層(21、31)は炭化ケイ素よりなる、請求の範囲第1項に記載のMOSFET(1、3)。
- 前記炭化ケイ素基板(2)の前記主面のオフ方位が<11−20>方向±5°以下の範囲である、請求の範囲第1項に記載のMOSFET(1、3)。
- 前記炭化ケイ素基板(2)の前記主面のオフ方位が<01−10>方向±5°以下の範囲である、請求の範囲第1項に記載のMOSFET(1、3)。
- 前記炭化ケイ素基板(2)の前記主面の面方位は、面方位{03−38}に対してオフ角が−3°以上+5°以下である、請求の範囲第6項に記載のMOSFET(1、3)。
- 前記炭化ケイ素基板(2)の前記主面は、<01−10>方向における(0−33−8)面に対するオフ角が−3°以上+5°以下である、請求の範囲第6項に記載のMOSFET(1、3)。
- {0001}面に対しオフ角が50°以上65°以下である主面を有する炭化ケイ素基板(2)を準備する工程と、
前記炭化ケイ素基板(2)の前記主面上に半導体層(21、31)を形成する工程と、
前記半導体層(21、31)の表面に接触するように絶縁膜(26)を形成する工程とを備え、
サブスレッショルドスロープが0.4V/Decade以下である、MOSFET(1、3)の製造方法。 - 前記絶縁膜(26)を形成する工程は、前記絶縁膜(26)をドライ酸化により形成する工程と、前記絶縁膜(26)を窒素原子を含有するガスを雰囲気ガスとして用いて熱処理する工程とを含む、請求の範囲第9項に記載のMOSFET(1、3)の製造方法。
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US (1) | US8536583B2 (ja) |
EP (1) | EP2413364A4 (ja) |
JP (1) | JPWO2010110252A1 (ja) |
KR (1) | KR20110133541A (ja) |
CN (1) | CN102150271B (ja) |
CA (1) | CA2736950A1 (ja) |
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Families Citing this family (6)
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JP5725024B2 (ja) * | 2010-12-22 | 2015-05-27 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2012253293A (ja) * | 2011-06-07 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP6119100B2 (ja) * | 2012-02-01 | 2017-04-26 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6206012B2 (ja) * | 2013-09-06 | 2017-10-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP7106881B2 (ja) * | 2018-02-09 | 2022-07-27 | 株式会社デンソー | 炭化珪素基板および炭化珪素半導体装置 |
US11239079B2 (en) | 2020-03-19 | 2022-02-01 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
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JPH1027762A (ja) * | 1996-03-18 | 1998-01-27 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマcvd方法及びこれを用いて生成された非晶質シリコン薄膜,及び、窒化シリコン膜,非晶質薄膜トランジスタ |
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- 2010-03-23 JP JP2011506053A patent/JPWO2010110252A1/ja active Pending
- 2010-03-23 CN CN201080002563.4A patent/CN102150271B/zh not_active Expired - Fee Related
- 2010-03-23 TW TW099108547A patent/TW201044587A/zh unknown
- 2010-03-23 WO PCT/JP2010/054952 patent/WO2010110252A1/ja active Application Filing
- 2010-03-23 CA CA2736950A patent/CA2736950A1/en not_active Abandoned
- 2010-03-23 KR KR1020117004212A patent/KR20110133541A/ko not_active Application Discontinuation
- 2010-03-23 EP EP10756048.4A patent/EP2413364A4/en not_active Withdrawn
- 2010-03-23 US US13/063,298 patent/US8536583B2/en active Active
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JPH03145761A (ja) * | 1989-11-01 | 1991-06-20 | Toshiba Corp | 半導体装置 |
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JPH1027762A (ja) * | 1996-03-18 | 1998-01-27 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマcvd方法及びこれを用いて生成された非晶質シリコン薄膜,及び、窒化シリコン膜,非晶質薄膜トランジスタ |
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Also Published As
Publication number | Publication date |
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WO2010110252A1 (ja) | 2010-09-30 |
US20110169016A1 (en) | 2011-07-14 |
TW201044587A (en) | 2010-12-16 |
CA2736950A1 (en) | 2010-09-30 |
EP2413364A1 (en) | 2012-02-01 |
KR20110133541A (ko) | 2011-12-13 |
EP2413364A4 (en) | 2013-05-08 |
US8536583B2 (en) | 2013-09-17 |
CN102150271A (zh) | 2011-08-10 |
CN102150271B (zh) | 2014-06-11 |
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