JPWO2009142233A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2009142233A1 JPWO2009142233A1 JP2010513040A JP2010513040A JPWO2009142233A1 JP WO2009142233 A1 JPWO2009142233 A1 JP WO2009142233A1 JP 2010513040 A JP2010513040 A JP 2010513040A JP 2010513040 A JP2010513040 A JP 2010513040A JP WO2009142233 A1 JPWO2009142233 A1 JP WO2009142233A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 199
- 239000012535 impurity Substances 0.000 claims abstract description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 112
- 230000015556 catabolic process Effects 0.000 description 16
- 230000005684 electric field Effects 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (3)
- 第1の導電型をもつ第1半導体層と、
この第1半導体層上に設けられ、上記第1の導電型と反対の第2の導電型を持つ第2半導体層と、
この第2半導体層を貫通して上記第1半導体層に達するトレンチと、
上記トレンチの内面に沿って、上記トレンチの底部および側部に形成された絶縁層と、
この絶縁層により上記第1半導体層および上記第2半導体層に対して絶縁されており、少なくともその一部が上記トレンチ内部に形成されたゲート電極と、
上記第2半導体層上において、上記トレンチの周囲に形成された上記第1の導電型をもつ半導体領域と、を備え、
上記第2半導体層は、上記トレンチに沿っており、かつ、上記第1半導体層および上記半導体領域に接するチャネル領域を有しており、
上記トレンチの深さ方向における上記チャネル領域の大きさは、0.1〜0.5μmであり、
上記チャネル領域は、ピーク不純物濃度が4×1017cm-3〜2×1018cm-3の範囲内である、半導体装置。 - 上記チャネル領域は、不純物濃度が5×1017cm-3以上の高濃度部を含んでおり、
上記高濃度部は、上記トレンチに接し、かつ、上記深さ方向と直角である方向に広がる層状である、請求項1に記載の半導体装置。 - 上記第1半導体層、上記第2半導体層、および、上記半導体領域は、炭化珪素から構成されている、請求項1に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010513040A JP5819064B2 (ja) | 2008-05-20 | 2009-05-20 | 半導体装置 |
Applications Claiming Priority (4)
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JP2008131884 | 2008-05-20 | ||
JP2008131884 | 2008-05-20 | ||
JP2010513040A JP5819064B2 (ja) | 2008-05-20 | 2009-05-20 | 半導体装置 |
PCT/JP2009/059257 WO2009142233A1 (ja) | 2008-05-20 | 2009-05-20 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014161371A Division JP2014241435A (ja) | 2008-05-20 | 2014-08-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2009142233A1 true JPWO2009142233A1 (ja) | 2011-09-29 |
JP5819064B2 JP5819064B2 (ja) | 2015-11-18 |
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JP2010513040A Active JP5819064B2 (ja) | 2008-05-20 | 2009-05-20 | 半導体装置 |
JP2014161371A Pending JP2014241435A (ja) | 2008-05-20 | 2014-08-07 | 半導体装置 |
Family Applications After (1)
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JP2014161371A Pending JP2014241435A (ja) | 2008-05-20 | 2014-08-07 | 半導体装置 |
Country Status (5)
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US (2) | US8575622B2 (ja) |
EP (3) | EP2293336B1 (ja) |
JP (2) | JP5819064B2 (ja) |
CN (1) | CN102037564B (ja) |
WO (1) | WO2009142233A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012099601A (ja) * | 2010-11-01 | 2012-05-24 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2012160584A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Ind Ltd | 半導体装置 |
WO2012164817A1 (ja) | 2011-05-30 | 2012-12-06 | パナソニック株式会社 | 半導体素子およびその製造方法 |
CN103378141B (zh) * | 2012-04-25 | 2016-03-09 | 上海北车永电电子科技有限公司 | 绝缘栅双极型晶体管及其制作方法 |
JP6056292B2 (ja) | 2012-09-12 | 2017-01-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2014056913A (ja) | 2012-09-12 | 2014-03-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP5811973B2 (ja) | 2012-09-12 | 2015-11-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2014102916A1 (ja) * | 2012-12-26 | 2014-07-03 | 株式会社日立製作所 | 炭化珪素半導体装置 |
JP6048317B2 (ja) | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2015072999A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社デンソー | 炭化珪素半導体装置 |
JP6110900B2 (ja) * | 2015-07-07 | 2017-04-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6472776B2 (ja) | 2016-02-01 | 2019-02-20 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
DE102016226237A1 (de) * | 2016-02-01 | 2017-08-03 | Fuji Electric Co., Ltd. | Siliziumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliziumcarbid-halbleitervorrichtung |
JP6907233B2 (ja) | 2016-02-02 | 2021-07-21 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | パワー半導体デバイス |
JP6784921B2 (ja) * | 2017-02-17 | 2020-11-18 | 株式会社デンソー | スイッチング素子とその製造方法 |
US10497777B2 (en) | 2017-09-08 | 2019-12-03 | Hestia Power Inc. | Semiconductor power device |
DE102018200676A1 (de) * | 2018-01-17 | 2019-07-18 | Robert Bosch Gmbh | Leistungselektronisches Bauelement |
JP2020123607A (ja) * | 2019-01-29 | 2020-08-13 | トヨタ自動車株式会社 | 半導体装置 |
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JPH06101566B2 (ja) * | 1984-04-25 | 1994-12-12 | 株式会社日立製作所 | 縦型電界効果トランジスタ |
US5742076A (en) * | 1996-06-05 | 1998-04-21 | North Carolina State University | Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance |
JPH11145457A (ja) * | 1997-11-07 | 1999-05-28 | Nec Corp | 縦型電界効果トランジスタ |
JP4371521B2 (ja) * | 2000-03-06 | 2009-11-25 | 株式会社東芝 | 電力用半導体素子およびその製造方法 |
JP4696335B2 (ja) * | 2000-05-30 | 2011-06-08 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2003051598A (ja) * | 2001-05-31 | 2003-02-21 | Hideshi Ito | 高周波パワーmosfet |
US6919599B2 (en) * | 2002-06-28 | 2005-07-19 | International Rectifier Corporation | Short channel trench MOSFET with reduced gate charge |
JP2004335990A (ja) * | 2003-03-10 | 2004-11-25 | Fuji Electric Device Technology Co Ltd | Mis型半導体装置 |
JP4945055B2 (ja) * | 2003-08-04 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP3954541B2 (ja) * | 2003-08-05 | 2007-08-08 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4404709B2 (ja) | 2004-07-12 | 2010-01-27 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
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JP4923543B2 (ja) | 2005-11-30 | 2012-04-25 | トヨタ自動車株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP5101030B2 (ja) * | 2006-04-10 | 2012-12-19 | 三菱電機株式会社 | トレンチ型mosfet及びその製造方法 |
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2009
- 2009-05-20 EP EP09750595.2A patent/EP2293336B1/en active Active
- 2009-05-20 EP EP22206776.1A patent/EP4156302A1/en active Pending
- 2009-05-20 EP EP19203089.8A patent/EP3614441B1/en active Active
- 2009-05-20 US US12/993,209 patent/US8575622B2/en active Active
- 2009-05-20 WO PCT/JP2009/059257 patent/WO2009142233A1/ja active Application Filing
- 2009-05-20 JP JP2010513040A patent/JP5819064B2/ja active Active
- 2009-05-20 CN CN2009801184067A patent/CN102037564B/zh active Active
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2013
- 2013-10-09 US US14/049,810 patent/US9024329B2/en active Active
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- 2014-08-07 JP JP2014161371A patent/JP2014241435A/ja active Pending
Also Published As
Publication number | Publication date |
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EP3614441B1 (en) | 2023-04-19 |
JP5819064B2 (ja) | 2015-11-18 |
JP2014241435A (ja) | 2014-12-25 |
CN102037564A (zh) | 2011-04-27 |
EP2293336A4 (en) | 2014-01-29 |
EP4156302A1 (en) | 2023-03-29 |
EP2293336B1 (en) | 2019-11-27 |
US20110068353A1 (en) | 2011-03-24 |
EP2293336A1 (en) | 2011-03-09 |
CN102037564B (zh) | 2013-04-10 |
US9024329B2 (en) | 2015-05-05 |
WO2009142233A1 (ja) | 2009-11-26 |
US20140034969A1 (en) | 2014-02-06 |
EP3614441A1 (en) | 2020-02-26 |
US8575622B2 (en) | 2013-11-05 |
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