JP2020047680A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 216
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 215
- 239000012535 impurity Substances 0.000 claims description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000003763 carbonization Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 125
- 230000005684 electric field Effects 0.000 description 77
- 210000000746 body region Anatomy 0.000 description 35
- 230000007423 decrease Effects 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000002040 relaxant effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Abstract
Description
第1の実施形態の半導体装置は、第1の面と前記第1の面に対向する第2の面とを有する炭化珪素層と、炭化珪素層の中に設けられ、第1の方向に延びる第1のトレンチと、炭化珪素層の中に設けられ、第1の方向に延びる第2のトレンチと、第1のトレンチの中に設けられた第1のゲート電極と、第2のトレンチの中に設けられた第2のゲート電極と、第1のゲート電極と炭化珪素層との間に設けられた第1のゲート絶縁層と、第2のゲート電極と炭化珪素層との間に設けられた第2のゲート絶縁層と、炭化珪素層の中に設けられた第1導電型の第1の炭化珪素領域と、炭化珪素層の中に設けられ、第1の炭化珪素領域と第1の面との間に位置し、第1のトレンチと第2のトレンチとの間に位置し、第1の方向に離間して配置された複数の第2導電型の第2の炭化珪素領域と、炭化珪素層の中に設けられ、第2の炭化珪素領域と第1の面との間に位置する第1導電型の第3の炭化珪素領域と、炭化珪素層の中に設けられ、2つの第2の炭化珪素領域の間に位置し、第1のトレンチと第1の炭化珪素領域との間に位置し、第2の炭化珪素領域に接する第2導電型の第4の炭化珪素領域と、炭化珪素層の中に設けられ、2つの第2の炭化珪素領域の間に位置し、第2のトレンチと第1の炭化珪素領域との間に位置し、第2の炭化珪素領域に接する第2導電型の第5の炭化珪素領域と、炭化珪素層の第1の面の側に設けられ、第3の炭化珪素領域に接し、2つの第2の炭化珪素領域の間の第1の炭化珪素領域に接する第1の電極と、炭化珪素層の第2の面の側に設けられた第2の電極と、を備える。
第2の実施形態の半導体装置は、炭化珪素層の中に設けられ、第4の炭化珪素領域と第1の面との間に位置し、第4の炭化珪素領域よりも第2導電型不純物濃度が高い第2導電型の第8の炭化珪素領域と、炭化珪素層の中に設けられ、第5の炭化珪素領域と第1の面との間に位置し、第5の炭化珪素領域よりも第2導電型不純物濃度が高い第2導電型の第9の炭化珪素領域と、を更に備える点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
第3の実施形態の半導体装置は、トランジスタ領域が第6の炭化珪素領域及び第7の炭化珪素領域を、備えない点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
第4の実施形態の半導体装置は、ダイオード領域も第6の炭化珪素領域及び第7の炭化珪素領域を、備えない点で、第3の実施形態と異なっている。以下、第3の実施形態と重複する内容については記述を省略する。
12 ソース電極(第1の電極)
14 ドレイン電極(第2の電極)
16a 第1のゲート電極
16b 第2のゲート電極
18a 第1のゲート絶縁層
18b 第2のゲート絶縁層
22a 第1のトレンチ
22b 第2のトレンチ
26 ドリフト領域(第1の炭化珪素領域)
28 ボディ領域(第2の炭化珪素領域)
30 ソース領域(第3の炭化珪素領域)
32a 第1の接続領域(第4の炭化珪素領域)
32b 第2の接続領域(第5の炭化珪素領域)
34a 第1の電界緩和領域(第6の炭化珪素領域)
34b 第2の電界緩和領域(第7の炭化珪素領域)
36a 第1の高濃度領域(第8の炭化珪素領域)
36b 第2の高濃度領域(第9の炭化珪素領域)
38 コンタクト領域(第10の炭化珪素領域)
100 MOSFET(半導体装置)
101 MOSFET(半導体装置)
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
400 MOSFET(半導体装置)
P1 第1の面
P2 第2の面
Claims (9)
- 第1の面と前記第1の面に対向する第2の面とを有する炭化珪素層と、
前記炭化珪素層の中に設けられ、第1の方向に延びる第1のトレンチと、
前記炭化珪素層の中に設けられ、前記第1の方向に延びる第2のトレンチと、
前記第1のトレンチの中に設けられた第1のゲート電極と、
前記第2のトレンチの中に設けられた第2のゲート電極と、
前記第1のゲート電極と前記炭化珪素層との間に設けられた第1のゲート絶縁層と、
前記第2のゲート電極と前記炭化珪素層との間に設けられた第2のゲート絶縁層と、
前記炭化珪素層の中に設けられた第1導電型の第1の炭化珪素領域と、
前記炭化珪素層の中に設けられ、前記第1の炭化珪素領域と前記第1の面との間に位置し、前記第1のトレンチと前記第2のトレンチとの間に位置し、前記第1の方向に離間して配置された複数の第2導電型の第2の炭化珪素領域と、
前記炭化珪素層の中に設けられ、前記第2の炭化珪素領域と前記第1の面との間に位置する第1導電型の第3の炭化珪素領域と、
前記炭化珪素層の中に設けられ、2つの前記第2の炭化珪素領域の間に位置し、前記第1のトレンチと前記第1の炭化珪素領域との間に位置し、前記第2の炭化珪素領域に接する第2導電型の第4の炭化珪素領域と、
前記炭化珪素層の中に設けられ、2つの前記第2の炭化珪素領域の間に位置し、前記第2のトレンチと前記第1の炭化珪素領域との間に位置し、前記第2の炭化珪素領域に接する第2導電型の第5の炭化珪素領域と、
前記炭化珪素層の前記第1の面の側に設けられ、前記第3の炭化珪素領域に接し、2つの前記第2の炭化珪素領域の間の前記第1の炭化珪素領域に接する第1の電極と、
前記炭化珪素層の前記第2の面の側に設けられた第2の電極と、
を備える半導体装置。 - 前記第4の炭化珪素領域と前記第2の面との間の距離、及び、前記第5の炭化珪素領域と前記第2の面との間の距離は、前記第2の炭化珪素領域と前記第2の面との距離よりも小さい請求項1記載の半導体装置。
- 前記炭化珪素層の中に設けられ、前記第1のトレンチと前記第2の面との間に位置し、前記第1のトレンチと前記第1の炭化珪素領域との間に位置し、前記第4の炭化珪素領域に接し、前記第1の方向に延びる第2導電型の第6の炭化珪素領域と、
前記炭化珪素層の中に設けられ、前記第2のトレンチと前記第2の面との間に位置し、前記第2のトレンチと前記第1の炭化珪素領域との間に位置し、前記第5の炭化珪素領域に接し、前記第1の方向に延びる第2導電型の第7の炭化珪素領域と、
を更に備える請求項1又は請求項2記載の半導体装置。 - 前記炭化珪素層の中に設けられ、前記第4の炭化珪素領域と前記第1の面との間に位置し、前記第4の炭化珪素領域よりも第2導電型不純物濃度が高い第2導電型の第8の炭化珪素領域と、
前記炭化珪素層の中に設けられ、前記第5の炭化珪素領域と前記第1の面との間に位置し、前記第5の炭化珪素領域よりも第2導電型不純物濃度が高い第2導電型の第9の炭化珪素領域と、
を更に備える請求項1ないし請求項3いずれか一項記載の半導体装置。 - 前記炭化珪素層の中に設けられ、前記第2の炭化珪素領域と前記第1の面との間に位置し、前記第2の炭化珪素領域よりも第2導電型不純物濃度が高い第2導電型の第10の炭化珪素領域を、更に備える請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記4の炭化珪素領域の第2導電型不純物濃度、及び、前記第5の炭化珪素領域の第2導電型不純物濃度は、前記第2の炭化珪素領域の第2導電型不純物濃度よりも高い請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記第4の炭化珪素領域の前記第1の方向の幅、及び、前記第5の炭化珪素領域の前記第1の方向の幅が、2つの前記第2の炭化珪素領域に挟まれる前記第1の炭化珪素領域の前記第1の方向の幅よりも広い請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記第1の電極と前記第1の炭化珪素領域との間の接続はショットキー接続である請求項1ないし請求項7いずれか一項記載の半導体装置。
- 前記第1のゲート絶縁層及び前記第2のゲート絶縁層は、窒素を含む酸化シリコンを含む請求項1ないし請求項8いずれか一項記載の半導体装置。
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