JP7443735B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 179
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 85
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 30
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- 239000000758 substrate Substances 0.000 claims description 110
- 238000010894 electron beam technology Methods 0.000 claims description 50
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- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000005524 hole trap Effects 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 6
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- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 76
- 238000009826 distribution Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 8
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- 230000007423 decrease Effects 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
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- 238000004904 shortening Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
実施の形態1にかかる炭化珪素半導体装置の構造について説明する。図1は、実施の形態1にかかる炭化珪素半導体装置の構造を示す断面図である。図2は、図1の切断線A-A’におけるネットドーピング濃度分布およびホール密度分布を示す特性図である。図1に示す実施の形態1にかかる炭化珪素半導体装置10は、炭化珪素(SiC)を半導体材料として用いた半導体基板(半導体チップ)20のおもて面側に一般的なトレンチゲート構造を備えた縦型MOSFETである。
次に、実施の形態2にかかる炭化珪素半導体装置の製造方法について説明する。図5は、実施の形態2にかかる炭化珪素半導体装置の製造方法の概要を示すフローチャートである。図6は、実施の形態2にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。実施の形態2にかかる炭化珪素半導体装置の構造は、実施の形態1にかかる炭化珪素半導体装置10(図1,2参照)の構造と同じである。
次に、MOSFETの寄生ダイオード30(図1参照)に順方向に流れるホール電流(順方向電流)と、積層欠陥の成長幅と、の関係について検証した。図7は、実験例の順方向電流と積層欠陥の成長幅との関係を示す特性図である。ここで、積層欠陥の成長幅とは、帯状積層欠陥(図9の符号132bを参照)がn型のエピタキシャル層22,23内を半導体基板20のおもて面に平行な方向に成長する長さとした。
2 n型バッファ領域
3 n-型ドリフト領域
4 p型ベース領域
5 n+型ソース領域
6 p+型コンタクト領域
7 トレンチ
8 ゲート絶縁膜
9 ゲート電極
10 炭化珪素半導体装置
11 層間絶縁膜
11a コンタクトホール
12 オーミック電極
13 ソース電極
14 ドレイン電極
20 半導体基板
21 n+型出発基板
22 n型エピタキシャル層
23 n-型エピタキシャル層
24 p型エピタキシャル層
25 Epi/Sub界面
30 寄生ダイオード
41 電子線照射
42 紫外線照射
Claims (5)
- 順方向に電流が流れるpn接合を有する炭化珪素半導体装置であって、
炭化珪素からなる第1導電型の出発基板と、
前記出発基板の第1主面上に設けられた、前記出発基板よりも不純物濃度の低い炭化珪素からなる第1導電型の第1エピタキシャル層と、
前記出発基板の第1主面上に、前記第1エピタキシャル層を介して設けられた、前記第1エピタキシャル層よりも不純物濃度の低い炭化珪素からなる第1導電型の第2エピタキシャル層と、
前記出発基板の第1主面上に、前記第1エピタキシャル層および前記第2エピタキシャル層を介して設けられ、前記第2エピタキシャル層との間に前記pn接合を形成する、炭化珪素からなる第2導電型の第3エピタキシャル層と、
前記第3エピタキシャル層の内部に選択的に設けられた第1導電型の第1半導体領域と、
前記第3エピタキシャル層の、前記第1半導体領域を除く部分である第2導電型の第2半導体領域と、
前記第1半導体領域および前記第2半導体領域を貫通して前記第2エピタキシャル層に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第1半導体領域および前記第2半導体領域にオーミック接触する金属膜と、
前記金属膜を介して前記第1半導体領域および前記第2半導体領域に電気的に接続された第1電極と、
前記出発基板の第2主面に設けられた第2電極と、
を備え、
前記出発基板、前記第1エピタキシャル層、前記第2エピタキシャル層および前記第3エピタキシャル層の全体に正孔トラップが導入されており、
前記第2エピタキシャル層の少数キャリアライフタイムは70ns以下であり、
前記第1エピタキシャル層と前記出発基板との界面のホール密度は1×10 15 /cm 3 以下であることを特徴とする炭化珪素半導体装置。 - 前記pn接合で形成される寄生ダイオードに順方向に流れるホール電流のホール密度は、前記第2エピタキシャル層の内部を、前記pn接合から、前記第1エピタキシャル層と前記出発基板との界面へ向かうにしたがって低くなっていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 順方向に電流が流れるpn接合を有する炭化珪素半導体装置の製造方法であって、
炭化珪素からなる第1導電型の出発基板の第1主面上に、前記出発基板よりも不純物濃度の低い炭化珪素からなる第1導電型の第1エピタキシャル層を形成する第1工程と、
前記第1エピタキシャル層の上に、前記第1エピタキシャル層よりも不純物濃度の低い炭化珪素からなる第1導電型の第2エピタキシャル層を形成する第2工程と、
前記第2エピタキシャル層の上に、前記第2エピタキシャル層との間に前記pn接合を形成する炭化珪素からなる第2導電型の第3エピタキシャル層を形成する第3工程と、
前記第3エピタキシャル層にオーミック接触する金属膜を形成する第4工程と、
前記出発基板、前記第1エピタキシャル層、前記第2エピタキシャル層および前記第3エピタキシャル層の全体に、200kGy以上800kGy以下の照射量で電子線を照射する第5工程と、
前記第5工程の後、前記金属膜を介して前記第3エピタキシャル層に電気的に接続された第1電極を形成する第6工程と、
460℃以下の温度の熱処理により前記第1電極をシンタリングする第7工程と、
前記出発基板の第2主面上に第2電極を形成する第8工程と、
を含むことを特徴とする炭化珪素半導体装置の製造方法。 - 前記第5工程では、500kGy以下の照射量で電子線を照射することを特徴とする請求項3に記載の炭化珪素半導体装置の製造方法。
- 前記第3工程の後、前記第4工程の前に、
前記第3エピタキシャル層の表面領域に第1導電型の第1半導体領域を選択的に形成して、前記第3エピタキシャル層の、前記第1半導体領域を除く部分を第2導電型の第2半導体領域として残す第9工程と、
前記第1半導体領域および前記第2半導体領域を貫通して前記第2エピタキシャル層に達するトレンチを形成する第10工程と、
前記トレンチの内部にゲート絶縁膜を介してゲート電極を形成する第11工程と、を行い、
前記第4工程では、前記第1半導体領域および前記第2半導体領域にオーミック接触する前記金属膜を形成し、
前記第6工程では、前記金属膜を介して前記第1半導体領域および前記第2半導体領域に電気的に接続された前記第1電極を形成し、
前記第5工程の後、前記第6工程の前に、460℃以下の温度環境下で、前記第3エピタキシャル層の表面から、前記トレンチの側壁の前記ゲート絶縁膜に390nm以下の波長の紫外線を照射する第12工程を行うことを特徴とする請求項3または4に記載の炭化珪素半導体装置の製造方法。
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