JP6790010B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 272
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 236
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 231
- 229910052757 nitrogen Inorganic materials 0.000 claims description 205
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 108
- 239000012535 impurity Substances 0.000 claims description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 42
- 229910052799 carbon Inorganic materials 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 32
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 238000010586 diagram Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000011148 porous material Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004645 scanning capacitance microscopy Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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Description
第1の実施形態の半導体装置は、第1の電極と、第2の電極と、第1の電極と第2の電極との間に設けられた炭化珪素層と、炭化珪素層の中に設けられた第1のn型炭化珪素領域と、炭化珪素層の中の第1のn型炭化珪素領域と第1の電極との間に設けられ、第1のn型炭化珪素領域の第1のn型不純物濃度よりも高い第1の窒素濃度を有する第1の窒素領域と、を備える。
第2の実施形態の半導体装置は、炭化珪素層の中の第1のn型炭化珪素領域と第1の電極との間に設けられた第1のp型炭化珪素領域と、炭化珪素層の中の第1のn型炭化珪素領域と第1の電極との間に設けられ、第1のp型炭化珪素領域と離間した第2のp型炭化珪素領域と、炭化珪素層の中の第1のp型炭化珪素領域と第1の電極との間に設けられ、第1のn型不純物濃度よりも高い第2の窒素濃度を有する第2の窒素領域と、炭化珪素層の中の第2のp型炭化珪素領域と第1の電極との間に設けられ、第1のn型不純物濃度よりも高い第3の窒素濃度を有する第3の窒素領域と、を備える点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については一部記述を省略する。
12 カソード領域(第2のn型炭化珪素領域)
14 ドリフト領域(第1のn型炭化珪素領域)
21 第1のアノード領域(第1のp型炭化珪素領域)
22 第2のアノード領域(第2のp型炭化珪素領域)
34 アノード電極(第1の電極)
36 カソード電極(第2の電極)
61 第1の窒素領域
62 第2の窒素領域
63 第3の窒素領域
100 SBD(半導体装置)
200 MPSダイオード
P1 第1の面
P2 第2の面
Claims (18)
- 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に設けられた炭化珪素層と、
前記炭化珪素層の中に設けられた第1のn型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型炭化珪素領域の第1のn型不純物濃度よりも高い第1の窒素濃度を有する第1の窒素領域と、
を備え、
前記第1の窒素領域に、2個のシリコン原子と結合する第1の窒素原子と、前記第1の窒素原子と結合し2個のシリコン原子と結合する第2の窒素原子と、を有する半導体装置。 - 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に設けられた炭化珪素層と、
前記炭化珪素層の中に設けられた第1のn型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型炭化珪素領域の第1のn型不純物濃度よりも高い第1の窒素濃度を有する第1の窒素領域と、
を備え、
前記第1の窒素領域の中の2個の窒素原子が炭化珪素格子の炭素位置に存在する半導体装置。 - 前記第1の窒素領域は、前記第1の電極と隣り合う請求項1又は請求項2記載の半導体装置。
- 前記第1のn型炭化珪素領域に含まれるn型不純物は窒素である請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の窒素濃度が1×1017cm−3以上1×1022cm−3以下である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1のn型不純物濃度が1×1015cm−3以上2×1016cm−3以下である請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記第1の電極と前記第1の窒素領域との間の接合はショットキー接合である請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第2の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第2のn型不純物濃度を有する第2のn型炭化珪素領域を、備え、
前記第2の電極と前記第2のn型炭化珪素領域との間の接合はオーミック接合である請求項1ないし請求項7いずれか一項記載の半導体装置。 - 前記第1の窒素領域はn型の炭化珪素である請求項1ないし請求項8いずれか一項記載の半導体装置。
- 前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられた第1のp型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のp型炭化珪素領域と離間した第2のp型炭化珪素領域と、
を備える請求項1ないし請求項9いずれか一項記載の半導体装置。 - 前記炭化珪素層の中の前記第1のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第2の窒素濃度を有する第2の窒素領域と、
前記炭化珪素層の中の前記第2のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第3の窒素濃度を有する第3の窒素領域と、
を備える請求項10記載の半導体装置。 - 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に設けられた炭化珪素層と、
前記炭化珪素層の中に設けられた第1のn型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型炭化珪素領域の第1のn型不純物濃度よりも高い第1の窒素濃度を有する第1の窒素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられた第1のp型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のp型炭化珪素領域と離間した第2のp型炭化珪素領域と、
前記炭化珪素層の中の前記第1のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第2の窒素濃度を有する第2の窒素領域と、
前記炭化珪素層の中の前記第2のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第3の窒素濃度を有する第3の窒素領域と、
を備え、
前記第2の窒素領域及び前記第3の窒素領域はp型の炭化珪素である半導体装置。 - 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に設けられた炭化珪素層と、
前記炭化珪素層の中に設けられた第1のn型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型炭化珪素領域の第1のn型不純物濃度よりも高い第1の窒素濃度を有する第1の窒素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられた第1のp型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のp型炭化珪素領域と離間した第2のp型炭化珪素領域と、
前記炭化珪素層の中の前記第1のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第2の窒素濃度を有する第2の窒素領域と、
前記炭化珪素層の中の前記第2のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第3の窒素濃度を有する第3の窒素領域と、
を備え、
前記第2の窒素領域及び前記第3の窒素領域に、2個のシリコン原子と結合する第1の窒素原子と、前記第1の窒素原子と結合し2個のシリコン原子と結合する第2の窒素原子と、を有する半導体装置。 - 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に設けられた炭化珪素層と、
前記炭化珪素層の中に設けられた第1のn型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型炭化珪素領域の第1のn型不純物濃度よりも高い第1の窒素濃度を有する第1の窒素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられた第1のp型炭化珪素領域と、
前記炭化珪素層の中の前記第1のn型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のp型炭化珪素領域と離間した第2のp型炭化珪素領域と、
前記炭化珪素層の中の前記第1のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第2の窒素濃度を有する第2の窒素領域と、
前記炭化珪素層の中の前記第2のp型炭化珪素領域と前記第1の電極との間に設けられ、前記第1のn型不純物濃度よりも高い第3の窒素濃度を有する第3の窒素領域と、
を備え、
前記第2の窒素領域及び前記第3の窒素領域の中の2個の窒素原子が炭化珪素格子の炭素位置に存在する半導体装置。 - 前記第2の窒素濃度及び前記第3の窒素濃度が1×1018cm−3以上5×1022cm−3以下である請求項12ないし請求項14いずれか一項記載の半導体装置。
- 第1の面と第2の面とを有し、第1のn型炭化珪素領域を有し、前記第1の面が露出した炭化珪素層に対し、酸素分圧が0.1ppm以下のN2ガス中で1300℃以上1500℃以下の第1の熱処理を行い、窒素を含む第1の窒素領域を形成し、
前記第1の熱処理の後に、前記第1の面に第1の電極を形成し、
前記第1の熱処理の後に、前記第2の面に第2の電極を形成する半導体装置の製造方法。 - 前記第1の熱処理の前に、前記第1の面に熱酸化膜を形成し、
前記第1の熱処理の前に、前記熱酸化膜を剥離する請求項16記載の半導体装置の製造方法。 - 前記第1の熱処理の前に、前記第1の面の側からp型不純物のイオン注入を行い、第1のp型炭化珪素領域及び前記第1のp型炭化珪素領域と離間する第2のp型炭化珪素領域を形成し、
1650℃以上1900℃以下の第2の熱処理を行い、
前記第2の熱処理の後に前記第1の熱処理を行う請求項16又は請求項17記載の半導体装置の製造方法。
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