JP7181520B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP7181520B2 JP7181520B2 JP2018120289A JP2018120289A JP7181520B2 JP 7181520 B2 JP7181520 B2 JP 7181520B2 JP 2018120289 A JP2018120289 A JP 2018120289A JP 2018120289 A JP2018120289 A JP 2018120289A JP 7181520 B2 JP7181520 B2 JP 7181520B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 129
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 129
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052720 vanadium Inorganic materials 0.000 claims description 51
- 239000012535 impurity Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 18
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 58
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
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- 229910052799 carbon Inorganic materials 0.000 description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Description
実施の形態1にかかる炭化珪素(SiC)半導体装置の構造について説明する。図1は、実施の形態1にかかる炭化珪素半導体装置の構造を示す断面図である。図1には、活性領域31とエッジ終端領域32との境界付近を示す。活性領域31は、チップ中央部(半導体基板10の中央部)に配置され、オン状態のときに電流が流れる領域である。エッジ終端領域32は、活性領域31とチップ端部との間において活性領域31の周囲を囲み、n-型ドリフト層3の、チップおもて面(半導体基板10のおもて面)側の電界を緩和して耐圧(耐電圧)を保持する領域である。耐圧とは、リーク電流が過度に増大せず、素子が誤動作や破壊を起こさない限界の電圧である。
次に、実施の形態2にかかる炭化珪素半導体装置として、実施の形態1にかかる炭化珪素半導体装置を適用したIGBTの構造について説明する。図6は、実施の形態2にかかる炭化珪素半導体装置の構造を示す断面図である。図6に示す実施の形態2にかかる炭化珪素半導体装置は、実施の形態1にかかる炭化珪素半導体装置を適用したIGBTであり、例えば、p型コレクタ層202、n型フィールドストップ(Field Stop:FS)層203、n-型ドリフト層204、p型チャネル領域206となる各炭化珪素層241~244を順にエピタキシャル成長させてなる半導体基板240を用いて作製(製造)される。
次に、実施の形態3にかかる炭化珪素半導体装置として、実施の形態1にかかる炭化珪素半導体装置を適用したGTOサイリスタの構造について説明する。図13は、実施の形態3にかかる炭化珪素半導体装置の構造を示す断面図である。図13に示す実施の形態3にかかる炭化珪素半導体装置は、実施の形態1にかかる炭化珪素半導体装置を適用したGTOサイリスタであり、例えば、p型出発基板301上に第1p型層302、第1n型層303、n-型ドリフト層304、第2p型層305および第2n型層306となる各炭化珪素層321~325を順にエピタキシャル成長させてなる半導体基板320を用いて作製(製造)される。
2 n型バッファ層
3,204,304 n-型ドリフト層
4 p型アノード層
5,209,309 耐圧構造
10,240,320 半導体基板
11 n型バッファ層とn-型ドリフト層との界面
12 p型アノード層とn-型ドリフト層とのpn接合面
13 エッジ終端領域の段差
13’ 活性領域の段差
13a 活性領域における半導体基板のおもて面
13a' エッジ終端領域における半導体基板のおもて面
13b エッジ終端領域の段差のステア
13c エッジ終端領域の段差のコーナー部
21,220,310 第1n-型層
22,221,311 第2n-型層(n-型ライフタイム低減層)
22' n-型ドリフト層の内部のn型ドーピング濃度の濃度補償領域
23,222,312 第3n-型層
31 活性領域
32 エッジ終端領域
41 n型エピタキシャル層
42 n-型エピタキシャル層
43 p型エピタキシャル層
201 p+型コレクタコンタクト領域
202 p型コレクタ層
203 n型フィールドストップ層
205 p型ベース領域
206 p型チャネル領域
207 p+型エミッタコンタクト領域
208 n+型エミッタ領域
210 n型JFET領域
211 ゲート絶縁膜
212 ゲート電極
213 エミッタ電極
214 コレクタ電極
230 p型コレクタ層とn型フィールドストップ層とのpn接合面
231 第1n-型層の表面(第1検査用電極の接触面)
232 第3n-型層の表面(第2検査用電極の接触面)
241 p型炭化珪素層
242 n型炭化珪素層
243 n-型炭化珪素層
244 p型炭化珪素層
250 エピタキシャル基板
251 第1検査用電極
252 第2検査用電極
301 p型出発基板
302 第1p型層
303 第1n型層
305 第2p型層
306 第2n型層
307 p+型ゲートコンタクト領域
308 n+型カソードコンタクト領域
313 ゲート電極
314 カソード電極
315 アノード電極
321,324 p型炭化珪素層
322,325 n型炭化珪素層
323 n-型炭化珪素層
331 GTOサイリスタを構成するnpnpダイオードの中間のpn接合面(第2p型層とn-型ドリフト層とのpn接合面)
d1 n-型ライフタイム低減層の、p型アノード層とn-型ドリフト層とのpn接合面からの深さ
d2 n-型ライフタイム低減層が配置される、p型アノード層とn-型ドリフト層とのpn接合面からの深さ
d11 n-型ドリフト層の内部のn型ドーピング濃度の濃度補償領域の、p型アノード層とn-型ドリフト層とpn接合面からの深さ
d221 n-型ライフタイム低減層の、p型コレクタ層202とn型フィールドストップ層203とのpn接合面からの距離
d311 n-型ライフタイム低減層の、第2p型層とn-型ドリフト層とのpn接合面からの距離
t1 n型出発基板の厚さ
t2 n型バッファ層の厚さ
t3 n-型ドリフト層の活性領域における厚さ
t4 p型アノード層の厚さ
t5 n-型ライフタイム低減層の厚さ
t11 n-型ドリフト層の内部のn型ドーピング濃度の濃度補償領域の厚さ
t203 n型フィールドストップ層の厚さ
t221,t311 n-型ライフタイム低減層の厚さ
Claims (7)
- 順方向に電流が流れるpn接合面を有する炭化珪素半導体装置であって、
第1導電型ドーパントである第1元素を不純物として含む炭化珪素からなる第1の第1導電型エピタキシャル層と、
前記第1の第1導電型エピタキシャル層との間に前記pn接合面を有し、前記第1の第1導電型エピタキシャル層への少数キャリアの供給を行う、第2導電型ドーパントを含む炭化珪素からなる第2導電型エピタキシャル層と、
前記第1の第1導電型エピタキシャル層の内部に、前記pn接合面から離して選択的に設けられた、前記第1元素と、再結合中心を形成する第2元素と、を不純物として含む第1導電型層と、
を備え、
前記第1導電型層は、前記pn接合面から前記第1の第1導電型エピタキシャル層に向かう方向に5μmよりも深い第1深さに位置し、かつ前記pn接合面から、前記第1の第1導電型エピタキシャル層の厚さの1/3倍の第2深さまでの範囲内に配置され、
前記第2元素は、バナジウムであり、
前記第1導電型層の前記第1元素の濃度は、前記第1の第1導電型エピタキシャル層の前記第1元素の濃度と同じであり、
前記第1導電型層の前記第2元素の濃度は、前記第1の第1導電型エピタキシャル層の前記第1元素の濃度の1/100以上1/5以下であることを特徴とする炭化珪素半導体装置。 - 前記第2導電型エピタキシャル層と前記第1の第1導電型エピタキシャル層との前記pn接合面を有することを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記pn接合面と前記第1の第1導電型エピタキシャル層の間に、前記第1元素を前記第1の第1導電型エピタキシャル層よりも多く含む第2の第1導電型エピタキシャル層をさらに備え、
前記第2導電型エピタキシャル層と前記第2の第1導電型エピタキシャル層との前記pn接合面を有することを特徴とする請求項1に記載の炭化珪素半導体装置。 - 前記第1の第1導電型エピタキシャル層のうち前記第2元素を含まない領域のキャリア寿命が10μs以上であることを特徴とする請求項1または2に記載の炭化珪素半導体装置。
- 請求項1~4のいずれか一つに記載の炭化珪素半導体装置の製造方法であって、
前記第1の第1導電型エピタキシャル層の両表面間に所定電圧を印加することにより前記第1の第1導電型エピタキシャル層の内部に空乏層を広げ、当該空乏層の容量の変化量に基づいて、前記第1の第1導電型エピタキシャル層の第1導電型ドーピング濃度の深さ分布を取得することを特徴とする炭化珪素半導体装置の製造方法。 - PiNダイオード、MOSFET(絶縁ゲート型電界効果トランジスタ)の前記pn接合面で形成される寄生ダイオード、IGBT(絶縁ゲートバイポーラトランジスタ)、GTO(ゲートターンオフ)サイリスタであることを特徴とする請求項1、2、4のいずれか一つに記載の炭化珪素半導体装置。
- IGBT(絶縁ゲートバイポーラトランジスタ)、GTO(ゲートターンオフ)サイリスタであることを特徴とする請求項3に記載の炭化珪素半導体装置。
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