JPWO2008050376A1 - 半導体装置の製造方法及び製造装置 - Google Patents
半導体装置の製造方法及び製造装置 Download PDFInfo
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Abstract
Description
本発明者は、バンプのリフロー時における隣接バンプ間の短絡が、当該バンプの下方から加熱することに起因して生じることに着目し、本発明に想到した。本発明では、リフロー時において、先ずバンプの上部を当該バンプの溶融温度以上の所定温度に加熱し、当該上部から先に溶融を開始させる。続いて、バンプの下部を当該バンプの溶融温度以上の所定温度に加熱し、当該下部を溶融させる。このとき、バンプの上部は既に溶融が開始してハンダ粘性が低下した状態とされており、当該下部が溶融した段階で当該バンプは偏りなく略均一に溶融し、略球状(或いは半球状)の安定形状をとる。従って、熱振動等が生じても、既に安定形状とされているためにバンプが傾倒等する懸念はなく、各バンプは隣接間で短絡することなく所期の良好なリフロー状態が得られる。
図1は、本実施形態による半導体装置の製造装置の概略構成を示す模式図である。
この半導体装置の製造装置は、被処理対象となる基板、ここでは半導体ウェーハを収容する加熱処理チャンバ1と、加熱処理チャンバ1に収容された基板を支持する支持ピン2と、加熱手段である上部ヒータ3及び下部ヒータ4と、上部ヒータ3及び下部ヒータ4をそれぞれ移動させる移動機構5,6と、加熱処理チャンバ1内を真空引きする真空ポンプ7と、加熱処理チャンバ1内に雰囲気ガスを導入するガス導入機構8とを備えて構成されている。
なお、上部ヒータ3及び下部ヒータ4は、それぞれ独立に、又は同時に(協働して)加熱制御することができる構成を採る。
図2A〜図2Dは、本実施形態で用いるハンダバンプを形成する方法を工程順に示す概略断面図である。図3A〜図5Bは、本実施形態による基板処理方法を工程順に示す模式図である。ここで、図3C,図4A〜図4Cでは、上側の図が加熱処理チャンバ内の様子を、下側の図が上側の図内における矩形枠内のハンダバンプを拡大した様子をそれぞれ示す。
先ず、図2Aに示すように、トランジスタや半導体メモリ等の半導体素子が形成され、これら半導体素子と外部接続するための電極端子11が表面に複数形成されてなる半導体ウェーハ(シリコンウェーハ)10を用意する。
先ず、図3Aに示すように、表面の各電極端子11上にそれぞれハンダバンプ12が形成された状態の半導体ウェーハ10を、図1の半導体装置の製造装置の加熱処理チャンバ1内に導入する。
Claims (14)
- 半導体基板の一方の主面の電極上に形成されたバンプの上部のみを加熱し溶融させる第1の工程と、
前記バンプの下部も加熱し、前記バンブ全体を溶融させる第2の工程と
を含むことを特徴とする半導体装置の製造方法。 - 前記第1の工程と第2の工程は、蟻酸ガス雰囲気中で行なうことを特徴とする請求の範囲1に記載の半導体装置の製造方法。
- 前記第1の工程及び第2の工程の前に、
前記半導体基板を前記バンプの溶融温度未満で前記バンプの表面に形成された酸化膜の還元開始温度付近の温度に調整された蟻酸ガスで、前記酸化膜の除去を行なうことを特徴とする請求の範囲1に記載の半導体装置の製造方法。 - 前記蟻酸ガス雰囲気温度を、前記バンプの溶融温度未満で前記酸化膜の還元開始温度±5℃の範囲内に制御することを特徴とする請求の範囲3に記載の半導体装置の製造方法。
- 前記バンプは、ハンダバンプであることを特徴とする請求の範囲1に記載の半導体装置の製造方法。
- 前記バンプは、前記上部が前記下部よりも大きいオーバーハング形状に形成されていることを特徴とする請求の範囲1に記載の半導体装置の製造方法。
- チャンバ内の上部に設けられた第1の加熱手段と、
前記チャンバ内の下部に設けられた第2の加熱手段と
を含むことを特徴とする半導体装置の製造装置。 - 前記第1の加熱手段及び前記第2の加熱手段は、それぞれ独立に又は同時に加熱制御することを特徴とする請求の範囲7に記載の半導体装置の製造装置。
- 前記第2の加熱手段は、前記チャンバ内において、前記第1の加熱手段と対向するように設けられていることを特徴とする請求の範囲7に記載の半導体装置の製造装置。
- 前記第1の加熱手段を上下方向に移動させる第1の移動手段と、
前記第2の加熱手段を上下方向に移動させる第2の移動手段と
を更に含むことを特徴とする請求の範囲7に記載の半導体装置の製造装置。 - 前記第1の移動手段及び前記第2の移動手段は、前記第1の加熱手段と前記第2の加熱手段との離間距離が一定に保たれるように、両者が協働して前記第1の加熱手段及び前記第2の加熱手段を駆動することを特徴とする請求の範囲10に記載の半導体装置の製造装置。
- 前記チャンバ内において、被処理物を支持し、前記被処理物を上下方向に移動させる支持手段を更に含むことを特徴とする請求の範囲7に記載の半導体装置の製造装置。
- 前記チャンバ内に還元性ガスを導入するガス導入手段を更に含むことを特徴とする請求の範囲7に記載の半導体装置の製造装置。
- 前記第1の加熱手段は、前記処理チャンバ内に還元性ガスを導入した際における当該処理チャンバ内の雰囲気温度を、前記バンプの溶融温度未満で前記酸化膜の還元開始温度±5℃の範囲内に制御する請求の範囲13に記載の半導体装置の製造装置。
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JP2012009597A (ja) * | 2010-06-24 | 2012-01-12 | Elpida Memory Inc | 半導体デバイスの製造方法および半導体デバイスの製造装置 |
JP5885135B2 (ja) * | 2010-07-23 | 2016-03-15 | アユミ工業株式会社 | 加熱溶融処理方法および加熱溶融処理装置 |
TW201301412A (zh) * | 2011-06-20 | 2013-01-01 | Walsin Lihwa Corp | 晶片結合方法 |
TW201301413A (zh) * | 2011-06-20 | 2013-01-01 | Walsin Lihwa Corp | 晶片結合設備 |
US9773744B2 (en) * | 2011-07-12 | 2017-09-26 | Globalfoundries Inc. | Solder bump cleaning before reflow |
CN103094149A (zh) * | 2011-10-27 | 2013-05-08 | 沈阳芯源微电子设备有限公司 | 一种防止晶片翘曲的烘烤装置及其烘烤方法 |
JP5884448B2 (ja) * | 2011-12-01 | 2016-03-15 | 富士電機株式会社 | はんだ接合装置およびはんだ接合方法 |
JP2013143542A (ja) * | 2012-01-12 | 2013-07-22 | Tokyo Electron Ltd | 半導体デバイス製造システム及び半導体デバイス製造方法 |
JP6011074B2 (ja) * | 2012-01-20 | 2016-10-19 | 富士通株式会社 | 電子装置の製造方法及び電子装置の製造装置 |
CN103394781B (zh) * | 2013-07-09 | 2016-08-24 | 合肥聚能电物理高技术开发有限公司 | 真空状态下高贴合率钎焊黄铜波导管、水冷板的装置及方法 |
JP2020150202A (ja) * | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体装置の製造方法 |
JP7271761B1 (ja) | 2022-04-21 | 2023-05-11 | ミナミ株式会社 | 金属若しくは導電性の極小柱状ピンのワークの電極パッド部への接合方法 |
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JPH07164141A (ja) | 1993-10-22 | 1995-06-27 | Nippon Sanso Kk | はんだ付け方法及び装置 |
US5532612A (en) * | 1994-07-19 | 1996-07-02 | Liang; Louis H. | Methods and apparatus for test and burn-in of integrated circuit devices |
JPH08155675A (ja) * | 1994-11-29 | 1996-06-18 | Sony Corp | はんだバンプ形成用フラックス |
JPH1197448A (ja) * | 1997-09-18 | 1999-04-09 | Kemitoronikusu:Kk | 熱処理装置とこれを用いた半導体結晶の熱処理法 |
JP3397313B2 (ja) | 1999-12-20 | 2003-04-14 | 富士通株式会社 | 半導体装置の製造方法及び電子部品の実装方法 |
JP3404021B2 (ja) | 2001-01-18 | 2003-05-06 | 富士通株式会社 | はんだ接合装置 |
TW570856B (en) * | 2001-01-18 | 2004-01-11 | Fujitsu Ltd | Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system |
JP4119740B2 (ja) * | 2002-12-18 | 2008-07-16 | 富士通株式会社 | 半導体装置の製造方法 |
JP4066872B2 (ja) * | 2003-04-22 | 2008-03-26 | セイコーエプソン株式会社 | リフロ−装置及びリフロ−装置の制御方法 |
JP4541401B2 (ja) * | 2005-02-21 | 2010-09-08 | 富士通株式会社 | リフロー装置およびリフロー方法 |
US20060202001A1 (en) * | 2005-03-08 | 2006-09-14 | International Business Machines Corporation | Enhanced heat system for bga/cga rework |
US7402778B2 (en) * | 2005-04-29 | 2008-07-22 | Asm Assembly Automation Ltd. | Oven for controlled heating of compounds at varying temperatures |
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KR101030764B1 (ko) | 2011-04-27 |
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WO2008050376A1 (fr) | 2008-05-02 |
US20120251968A1 (en) | 2012-10-04 |
CN101512741B (zh) | 2013-10-16 |
JP5282571B2 (ja) | 2013-09-04 |
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US20090184156A1 (en) | 2009-07-23 |
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