TWI671875B - 覆晶之雷射接合用的裝置以及覆晶之雷射接合方法 - Google Patents

覆晶之雷射接合用的裝置以及覆晶之雷射接合方法 Download PDF

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TWI671875B
TWI671875B TW107119720A TW107119720A TWI671875B TW I671875 B TWI671875 B TW I671875B TW 107119720 A TW107119720 A TW 107119720A TW 107119720 A TW107119720 A TW 107119720A TW I671875 B TWI671875 B TW I671875B
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substrate
flip
pressing member
semiconductor wafer
laser
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TW201906106A (zh
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安根植
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南韓商普羅科技有限公司
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Abstract

本發明提供一種覆晶雷射接合設備以及覆晶雷射接合方法，且更確切地說，一種用於覆晶雷射接合的設備和方法，其中呈覆晶形式的半導體晶片藉由使用雷射光束接合到基板。根據覆晶雷射接合設備以及覆晶雷射接合方法，即使是彎曲或有可能彎曲的半導體晶片也可以藉由在按壓半導體晶片時利用雷射接合將半導體晶片接合到基板來接合到基板而不發生焊料凸塊的接觸失效。

Description

覆晶之雷射接合用的裝置以及覆晶之雷射接合方法
一或多個實施例關於一種用於覆晶雷射接合的設備和方法，且更確切地說，關於一種用於覆晶雷射接合的設備和方法，其中呈覆晶形式的半導體晶片藉由使用雷射光束接合到基板。
隨著電子產品變得緊湊，廣泛地使用未打線接合的呈覆晶形式的半導體晶片。呈覆晶形式的半導體晶片包含在半導體晶片的下表面上呈焊料凸塊形式的多個電極，且半導體晶片藉由將電極接合到與也形成在基板上的那些焊料凸塊相對應的位置來接合到基板。
如上文所描述，藉由覆晶方法將半導體晶片安裝在基板上的方法的實例包含迴焊方法和雷射接合方法。在迴焊方法中，在基板上安置具有塗布有助焊劑的焊料凸塊的半導體晶片之後，藉由高溫迴焊將半導體晶片接合到基板。根據雷射接合方法，包含塗布有助焊劑的焊料凸塊的半導體晶片如同在迴焊方法中一樣安置在基板上，且利用雷射光束照射半導體晶片以將能量傳遞到焊料凸塊，從而使得焊料凸塊立即融化且隨後硬化，進而使半導體晶片接合到基板。
覆晶型半導體晶片近來已在厚度上降低到數百微米或更小。這種厚度小的半導體晶片可由於半導體晶片自身的內應力而略微彎曲或翹曲。當半導體晶片如上述變形時，雖然半導體晶片的焊料凸塊中的一些並未與基板的相應焊料凸塊接觸，但仍可接合半導體晶片。這導致半導體晶片接合方法中的缺陷。此外，當半導體晶片和基板的溫度由於將雷射光束照射到半導體晶片而立即連同焊料凸塊的溫度一起升高時，半導體晶片或基板由於半導體晶片和基板的材料的熱膨脹係數的差異而可能部分地彎曲或翹曲，且這也導致半導體晶片接合方法中的缺陷。
一或多個實施例包含用於覆晶雷射接合的設備和方法，其中半導體晶片可以有效地接合到基板，同時防止因半導體晶片已彎曲或翹曲所致或因半導體晶片因為溫度升高而可能彎曲或翹曲所致的半導體晶片的焊料凸塊的不良接觸。
額外方面將部分地在以下描述中闡述，且將部分地從所述描述中顯而易見，或可藉由對所呈現實施例的實踐而獲悉。
根據一或多個實施例，覆晶雷射接合設備包含：固定構件，用以固定基板的下表面，其中待接合到基板的上表面的多個半導體晶片佈置在基板上；按壓構件，佈置在固定構件上方，所述按壓構件包含雷射光束穿過的透明部分；提升構件，用以使固定構件和按壓構件中的一個相對於固定構件和按壓構件中的另一個提升或下降，從而使得多個半導體晶片（受按壓的半導體晶片）中的至少一些按壓抵靠基板；以及雷射頭，用以使雷射光束穿過按壓構件的透明部分照射到在按壓構件與固定構件之間受按壓的半導體晶片，以便使半導體晶片的焊料凸塊與基板的焊料凸塊彼此接合。
根據一或多個實施例，覆晶雷射接合方法包含：（a）根據半導體晶片待接合在基板上的接合位置，將多個半導體晶片安置在基板的上表面上；（b）將基板的下表面固定到固定構件，多個半導體晶片安置在所述基板上；（c）藉由使用提升構件使按壓構件和固定構件中的一個相對於按壓構件和固定構件中的另一個提升或下降來將多個半導體晶片（受按壓的半導體晶片）中的至少一些按壓抵靠基板，其中按壓構件安置在固定構件上方且包含雷射光束穿過的透明部分；以及（d）藉由使用雷射頭，使雷射光束穿過按壓構件的透明部分照射到在按壓構件與固定構件之間受按壓的半導體晶片，以便使半導體晶片的焊料凸塊與基板的焊料凸塊彼此接合。
藉由結合附圖對實施例進行的以下描述，這些和/或其它方面將變得顯而易見並且更容易瞭解。
下文中，將參考附圖來詳細描述根據本公開的實施例的覆晶雷射接合設備。
圖1是根據本公開的實施例的覆晶雷射接合設備的概念圖，且圖2是圖1中所說明的覆晶雷射接合設備的按壓構件200的平面視圖。
根據本發明實施例的覆晶雷射接合設備是一種用於藉由使用雷射光束將半導體晶片20接合到呈覆晶形式的基板10的設備。焊料凸塊11和焊料凸塊21分別形成於基板10和半導體晶片20上，且當焊料凸塊11和焊料凸塊21由雷射光束傳遞的能量立即融化且隨後硬化時，半導體晶片20接合到基板10。
參考圖1和圖2，根據本發明實施例的覆晶雷射接合設備包含固定構件100、按壓構件200、提升構件300以及雷射頭400。
固定構件100固定基板10，待接合到基板10的半導體晶片20安置在基板10上。根據本發明實施例的固定構件100藉由使用真空吸附方法支撐基板10的下表面來固定基板10。將在與形成焊料凸塊11的位置相對應的精確位置處佈置半導體晶片20的基板10供應到固定構件100，且藉由固定構件100吸附並固定。在將助焊劑塗布在形成於半導體晶片20的下表面上的焊料凸塊21上之後，將半導體晶片20安置在基板10上。半導體晶片20隨後經由助焊劑的粘度或粘附特性暫時粘附到基板10。除非施加相對大的振動量或相對大的外力，否則佈置在基板10上的半導體晶片20並不因助焊劑的操作而搖晃且維持在其位置處。
按壓構件200安置在固定構件100上方。按壓構件200包含透明部分210和罩幕部分220。透明部分210可由透射雷射光束的透明材料形成。廣泛地用以透射雷射光束的石英可用作透明部分210的材料。罩幕部分220可由雷射光束無法穿透的不透光材料形成。罩幕部分220用以支撐透明部分210。透明部分210可安置在以一對一方式分別與基板10的半導體晶片20相對應的區域中，其中藉由使用固定構件100將基板10固定在透明部分210下方，且罩幕部分220用以平面地支撐透明部分210。另外，如上文所描述，罩幕部分220可由不透光材料形成以防止雷射光束穿過除透明部分210以外的區域。透明部分210的下表面是平面。當藉由使用按壓構件200經由隨後將描述的提升構件300的操作來按壓半導體晶片20時，半導體晶片20經由具有平坦下表面的透明部分210均勻且平面地按壓。
提升構件300執行將固定構件100上下垂直提升的功能。當基板10由固定構件100吸附且固定到所述固定構件100時，提升構件300將固定構件100向上提升以使固定構件100緊緊接觸到按壓構件200，進而按壓半導體晶片20。下文中，經由提升構件300的操作在固定構件100與按壓構件200之間受按壓的半導體晶片20將稱為「受按壓的半導體晶片20」。
雷射頭400安置在按壓構件200上方。雷射頭400產生雷射光束並使雷射光束穿過按壓構件200的透明部分210透射到按壓構件200的透明部分210下方的半導體晶片20。當基板10的焊料凸塊11和半導體晶片20的焊料凸塊21由於雷射光束傳遞的能量立即融化時，半導體晶片20接合到基板10。
雷射頭400安裝在頭部傳送構件500上。頭部傳送構件500使雷射頭400在水準方向上傳送。從按壓構件200上方，雷射頭400可同時將雷射光束照射到多個透明部分210或可將雷射光束依次照射到透明部分210中的每一個。頭部傳送構件500將雷射頭400傳送到雷射光束將照射的位置。
下文中，將描述用於藉由使用根據本發明實施例的如上文所描述來配置的覆晶雷射接合設備將半導體晶片20接合到基板10的覆晶雷射接合方法。
首先，根據半導體晶片20待接合在基板10上的接合位置將半導體晶片20安置在基板10的上表面上（步驟（a））。藉由將形成於半導體晶片20的下表面上的焊料凸塊21浸漬到助焊劑中或將助焊劑塗覆到焊料凸塊21來利用助焊劑塗布半導體晶片20的焊料凸塊21而將半導體晶片20佈置在基板10上的相應位置上。此處，基板10的焊料凸塊11以及半導體晶片20的焊料凸塊21面對彼此以彼此連接。如上文所描述，半導體晶片20現經由助焊劑的粘度或粘附力暫時粘附到基板10的上表面。
接下來，將安置有半導體晶片20的基板10安置在固定構件100上以使得基板10的下表面經由固定構件100固定（步驟（b））。固定構件100藉由使用真空吸附方法吸附基板10的下表面來固定基板10。此處，當半導體晶片20極薄且具有內應力時，半導體晶片20如圖3中所說明可能翹曲或彎曲。
當基板10如上文所描述固定到固定構件100時，藉由使用提升構件300將固定構件100向上提升來使半導體晶片20緊緊接觸到按壓構件200而使半導體晶片20按壓抵靠基板10（步驟（c））。由於基板10和半導體晶片20根據提升構件300的操作在按壓構件200與固定構件100之間彼此緊緊接觸，因此已彎曲的半導體晶片20平滑化以面對如圖4中所說明的基板10。
在此狀態中，雷射頭400照射雷射光束以使半導體晶片20的焊料凸塊21與基板10的焊料凸塊11彼此接合（步驟（d））。由雷射頭400照射的雷射光束經由按壓構件200的透明部分210透射到受按壓的半導體晶片20。基板10的焊料凸塊11以及受按壓的半導體晶片20的焊料凸塊21由於雷射光束傳遞的能量立即融化且隨後硬化，因此半導體晶片20接合到如圖4中所說明的基板10。雖然熱變形可能根據半導體晶片20或基板10因雷射光束所致的暫態溫度升高而發生，但由於按壓構件200的透明部分210將半導體晶片20向下按壓，因此半導體晶片20穩定地接合到基板10，同時防止半導體晶片20因熱變形所致的翹曲或彎曲。以這種方式，可防止焊料凸塊11和焊料凸塊21的接合缺陷。
如上文所描述，按壓構件200包含透明部分210和罩幕部分220，且雷射光束用以僅透射透明部分210。相應地，由雷射頭400照射的雷射光束穿過按壓構件200的透明部分210且僅透射到安置在透明部分210之下的半導體晶片20。藉由使用包含如上文所描述的透明部分210和罩幕部分220的按壓構件200，可防止雷射光束照射到基板10無需雷射光束能量傳遞的部分上。
另外，還可執行步驟（d）以使得能夠藉由使用如上文所描述的按壓構件200將多個半導體晶片20同時接合到基板10。藉由操作雷射頭400增大雷射光束的照射面積可使雷射光束同時照射到兩個或大於兩個半導體晶片20上。由於按壓構件200的罩幕部分220防止雷射光束穿過除與如上文所描述的半導體晶片20相對應的區域以外的區域，因此即使當雷射光束照射到相對寬的區域上時，雷射光束的能量仍可僅傳遞到待接合的半導體晶片20。藉由使用上述方法將多個半導體晶片20與基板10同時接合可提高整體產率。根據情況，還可執行步驟（d）以使得藉由使用按壓構件200按壓的所有半導體晶片20能夠藉由將雷射光束照射到如圖2中所說明的整個按壓構件200來同時接合到基板10。
另外，根據情況，可藉由使用上文所描述的頭部傳送構件500傳送雷射頭400來執行步驟（d）。可執行步驟（d），以使得藉由使用頭部傳送構件500傳送雷射頭部400能夠使每一個半導體晶片20同時依次接合到基板10。類似地，可藉由使兩個半導體晶片20同時接合到基板10或藉由將雷射光束同時照射到一行半導體晶片20來執行步驟（d）。
如上文所描述，當藉由使用按壓構件200同時按壓多個半導體晶片20時，僅雷射光束待照射的區域可藉由增大或減小雷射光束照射區域來修改，且因此，根據本公開的覆晶雷射接合設備和覆晶雷射接合方法，可快速執行半導體晶片20的接合操作。
同時，即使在未使用頭部傳送構件500時，仍可依次執行一或多個半導體晶片20上的接合操作。即便雷射頭400固定，但當雷射光束照射的位置和區域配置成根據雷射頭400的內部操作進行光學調節時，仍可藉由將雷射光束依次照射到半導體晶片20且還藉由使用包含處於固定狀態的雷射頭400的覆晶雷射接合設備來執行步驟（d）。
儘管已參考優選實施例來描述本公開，但本公開的範圍並不限於上文所描述和說明的結構。
舉例來說，當將提升構件300描述為使固定構件100提升或下降時，覆晶雷射接合設備還可用以使得提升構件能夠使按壓構件提升或下降。在這種情況下，當將基板固定到固定構件時，藉由在提升構件使按壓構件下降時按壓半導體晶片抵靠基板來執行步驟（c）。
另外，按壓構件對受按壓半導體晶片的按壓力可配置成藉由使用提升構件來調節。也可在按壓構件固定時藉由使用提升構件調節固定構件的增大壓力或在固定構件固定時藉由使用提升構件調節使按壓構件下降的下降壓力來調節基板與半導體晶片之間的按壓力。
另外，雖然上文描述藉由使用提升構件300向上提升固定構件100來按壓基板10上的所有半導體晶片20且同時或依次照射雷射光束以接合半導體晶片20，但是覆晶雷射接合設備也可配置成使得基板10上的半導體晶片20分組成預設數量的組，且藉由使用按壓構件依次按壓半導體晶片20的每一組，且隨後藉由使用雷射頭來接合。在這種情況下，根據本公開的覆晶雷射接合設備還包含水準傳送固定構件的固定單元傳送構件。根據如上文所描述配置的覆晶雷射接合設備，藉由以下操作將半導體晶片接合到基板：反復執行藉由使用固定單元傳送構件在水準方向上依次傳送固定構件，藉由使用提升構件來提升固定構件以將各組半導體晶片中的一些按壓為待接合的受按壓半導體晶片，且隨後使固定構件下降。
另外，儘管上文將按壓構件200描述為包含透明部分210和罩幕部分220，但也可使用不具有罩幕部分的按壓構件。在這種情況下，按壓構件的整個主要部分可由透明部分形成且用以按壓多個半導體晶片，且可將雷射光束照射到所有多個半導體晶片。
根據本公開的覆晶雷射接合設備以及覆晶雷射接合方法，即使是彎曲或有可能彎曲的半導體晶片也可以藉由在按壓半導體晶片時利用雷射接合將半導體晶片接合到基板來接合到基板而不發生焊料凸塊的接觸失效。
應理解，本文中所描述的實施例應認為僅具有描述性意義，而非出於限制性目的。對每一實施例內的特徵或方面的描述通常應認為可用於其它實施例中的其它類似特徵或方面。
雖然已參考圖式描述了一或多個實施例，但是本領域的一般技術人員將理解，可以在不脫離如由以下申請專利範圍所界定的精神和範圍的情況下在本文中進行形式和細節上的各種改變。
10‧‧‧基板
11、21‧‧‧焊料凸塊
20‧‧‧半導體晶片
100‧‧‧固定構件
200‧‧‧按壓構件
210‧‧‧透明部分
220‧‧‧罩幕部分
300‧‧‧提升構件
400‧‧‧雷射頭
500‧‧‧頭部傳送構件
圖1是根據本公開的實施例的覆晶雷射接合設備的概念圖。 圖2是圖1中所說明的覆晶雷射接合設備的按壓構件的平面視圖。 圖3和圖4是用於描述圖1中所說明的覆晶雷射接合設備的操作的橫截面視圖。

Claims (16)

  1. 一種覆晶雷射接合設備，包括：固定構件，用以固定基板的下表面，其中待接合到所述基板的上表面的多個半導體晶片佈置在所述基板上；按壓構件，佈置在所述固定構件上方，所述按壓構件包括雷射光束穿過的透明部分；提升構件，用以使所述固定構件和所述按壓構件中的一個相對於所述固定構件和所述按壓構件中的另一個提升或下降，從而使得受按壓的所述多個半導體晶片中的至少一些按壓抵靠所述基板；以及雷射頭，用以使所述雷射光束穿過所述按壓構件的所述透明部分而照射到在所述按壓構件與所述固定構件之間受按壓的半導體晶片，以便使所述半導體晶片的焊料凸塊與所述基板的焊料凸塊彼此接合。
  2. 如申請專利範圍第1項所述的覆晶雷射接合設備，其中所述按壓構件還包括由不透光材料形成且支撐所述透明部分的罩幕部分，其中所述按壓構件的所述透明部分安置在與受按壓的所述半導體晶片相對應的區域中。
  3. 如申請專利範圍第2項所述的覆晶雷射接合設備，其中所述雷射頭將雷射光束依次照射到受按壓的所述半導體晶片中的每一個。
  4. 如申請專利範圍第2項所述的覆晶雷射接合設備，其中所述雷射頭將雷射光束同時照射到受按壓的所述半導體晶片中的至少兩個。
  5. 如申請專利範圍第2項所述的覆晶雷射接合設備，其中所述雷射頭將雷射光束同時照射到所有受按壓的所述半導體晶片。
  6. 如申請專利範圍第3項所述的覆晶雷射接合設備，還包括用以傳送所述雷射頭的頭部傳送構件。
  7. 如申請專利範圍第1項所述的覆晶雷射接合設備，其中所述提升構件使所述按壓構件相對於所述固定構件提升或下降。
  8. 如申請專利範圍第1項所述的覆晶雷射接合設備，其中所述提升構件使所述固定構件相對於所述按壓構件提升或下降。
  9. 如申請專利範圍第1項所述的覆晶雷射接合設備，其中所述固定構件吸附所述基板的所述下表面以固定所述基板的下表面。
  10. 一種覆晶雷射接合方法，包括：步驟a，根據半導體晶片待接合在基板上的接合位置，將多個半導體晶片安置在所述基板的上表面上；步驟b，將所述基板的下表面固定到固定構件，所述多個半導體晶片安置在所基板上；步驟c，藉由使用提升構件使按壓構件和所述固定構件中的一個相對於所述按壓構件和所述固定構件中的另一個提升或下降來將受按壓的所述多個半導體晶片中的至少一些按壓抵靠所述基板，其中所述按壓構件安置在所述固定構件上方且包括雷射光束穿過的透明部分；以及步驟d，藉由使用雷射頭，使雷射光束穿過所述按壓構件的所述透明部分照射到在所述按壓構件與所述固定構件之間的所述受按壓的半導體晶片，以便使所述半導體晶片的焊料凸塊與所述基板的焊料凸塊彼此接合。
  11. 如申請專利範圍第10項所述的覆晶雷射接合方法，其中藉由使用所述按壓構件來執行步驟c，所述按壓構件包括安置在與受按壓的所述半導體晶片相對應的區域中的所述透明部分以及由不透光材料形成且支撐所述透明部分的罩幕部分。
  12. 如申請專利範圍第11項所述的覆晶雷射接合方法，其中藉由使用所述雷射頭將雷射光束依次照射到受按壓的所述半導體晶片中的每一個來執行步驟d。
  13. 如申請專利範圍第11項所述的覆晶雷射接合方法，其中藉由使用所述雷射頭將雷射光束同時照射到受按壓的所述半導體晶片中的至少兩個來執行步驟d。
  14. 如申請專利範圍第11項所述的覆晶雷射接合方法，其中藉由使用所述雷射頭將雷射光束同時照射到所有受按壓的所述半導體晶片來執行步驟d。
  15. 如申請專利範圍第10項所述的覆晶雷射接合方法，其中當所述提升構件使所述按壓構件相對於所述固定構件提升或下降時執行步驟c。
  16. 如申請專利範圍第10項所述的覆晶雷射接合方法，其中當所述提升構件使所述固定構件相對於所述按壓構件提升或下降時執行步驟c。
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