CN109103116A - 用于倒装芯片的激光接合的设备以及方法 - Google Patents

用于倒装芯片的激光接合的设备以及方法 Download PDF

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CN109103116A
CN109103116A CN201810629263.7A CN201810629263A CN109103116A CN 109103116 A CN109103116 A CN 109103116A CN 201810629263 A CN201810629263 A CN 201810629263A CN 109103116 A CN109103116 A CN 109103116A
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laser
chip
flip
semiconductor chip
substrate
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CN109103116B (zh
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安根植
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Protec Co Ltd Korea
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Abstract

本发明提供一种倒装芯片激光接合设备以及倒装芯片激光接合方法，且更确切地说，一种用于倒装芯片激光接合的设备和方法，其中呈倒装芯片形式的半导体芯片通过使用激光束接合到衬底。根据倒装芯片激光接合设备以及倒装芯片激光接合方法，即使是弯曲或有可能弯曲的半导体芯片也可以通过在按压半导体芯片时利用激光接合将半导体芯片接合到衬底来接合到衬底而不发生焊料凸块的接触失效。

Description

用于倒装芯片的激光接合的设备以及方法
技术领域
一或多个实施例涉及一种用于倒装芯片激光接合的设备和方法，且更确切地说，涉及一种用于倒装芯片激光接合的设备和方法，其中呈倒装芯片形式的半导体芯片通过使用激光束接合到衬底。
背景技术
随着电子产品变得紧凑，广泛地使用未引线接合的呈倒装芯片形式的半导体芯片。呈倒装芯片形式的半导体芯片包含在半导体芯片的下表面上呈焊料凸块形式的多个电极，且半导体芯片通过将电极接合到与也形成在衬底上的那些焊料凸块相对应的位置来接合到衬底。
如上文所描述，通过倒装芯片方法将半导体芯片安装在衬底上的方法的实例包含回焊方法和激光接合方法。在回焊方法中，在衬底上安置具有涂布有焊剂的焊料凸块的半导体芯片之后，通过高温回焊将半导体芯片接合到衬底。根据激光接合方法，包含涂布有焊剂的焊料凸块的半导体芯片如同在回焊方法中一样安置在衬底上，且利用激光束照射半导体芯片以将能量传递到焊料凸块，从而使得焊料凸块立即融化且随后硬化，进而使半导体芯片接合到衬底。
倒装芯片型半导体芯片近来已在厚度上降低到数百微米或更小。这种厚度小的半导体芯片可由于半导体芯片自身的内应力而略微弯曲或翘曲。当半导体芯片如上述变形时，虽然半导体芯片的焊料凸块中的一些并未与衬底的相应焊料凸块接触，但仍可接合半导体芯片。这导致半导体芯片接合方法中的缺陷。此外，当半导体芯片和衬底的温度由于将激光束照射到半导体芯片而立即连同焊料凸块的温度一起升高时，半导体芯片或衬底由于半导体芯片和衬底的材料的热膨胀系数的差异而可能部分地弯曲或翘曲，且这也导致半导体芯片接合方法中的缺陷。
发明内容
一或多个实施例包含用于倒装芯片激光接合的设备和方法，其中半导体芯片可以有效地接合到衬底，同时防止因半导体芯片已弯曲或翘曲所致或因半导体芯片因为温度升高而可能弯曲或翘曲所致的半导体芯片的焊料凸块的不良接触。
额外方面将部分地在以下描述中阐述，且将部分地从所述描述中显而易见，或可通过对所呈现实施例的实践而获悉。
根据一或多个实施例，倒装芯片激光接合设备包含：固定构件，用以固定衬底的下表面，其中待接合到衬底的上表面的多个半导体芯片布置在衬底上；按压构件，布置在固定构件上方，所述按压构件包含激光束穿过的透明部分；提升构件，用以使固定构件和按压构件中的一个相对于固定构件和按压构件中的另一个提升或下降，从而使得多个半导体芯片(受按压的半导体芯片)中的至少一些按压抵靠衬底；以及激光头，用以使激光束穿过按压构件的透明部分照射到在按压构件与固定构件之间受按压的半导体芯片，以便使半导体芯片的焊料凸块与衬底的焊料凸块彼此接合。
根据一或多个实施例，倒装芯片激光接合方法包含：(a)根据半导体芯片待接合在衬底上的接合位置，将多个半导体芯片安置在衬底的上表面上；(b)将衬底的下表面固定到固定构件，多个半导体芯片安置在所述衬底上；(c)通过使用提升构件使按压构件和固定构件中的一个相对于按压构件和固定构件中的另一个提升或下降来将多个半导体芯片(受按压的半导体芯片)中的至少一些按压抵靠衬底，其中按压构件安置在固定构件上方且包含激光束穿过的透明部分；以及(d)通过使用激光头，使激光束穿过按压构件的透明部分照射到在按压构件与固定构件之间受按压的半导体芯片，以便使半导体芯片的焊料凸块与衬底的焊料凸块彼此接合。
附图说明
通过结合附图对实施例进行的以下描述，这些和/或其它方面将变得显而易见并且更容易了解，在所述附图中：
图1是根据本公开的实施例的倒装芯片激光接合设备的概念图。
图2是图1中所说明的倒装芯片激光接合设备的按压构件的平面视图。
图3和图4是用于描述图1中所说明的倒装芯片激光接合设备的操作的横截面视图。
附图标号说明
10：衬底；
11、21：焊料凸块；
20：半导体芯片；
100：固定构件；
200：按压构件；
210：透明部分；
220：掩模部分；
300：提升构件；
400：激光头；
500：头部传送构件。
具体实施方式
下文中，将参考附图来详细描述根据本公开的实施例的倒装芯片激光接合设备。
图1是根据本公开的实施例的倒装芯片激光接合设备的概念图，且图2是图1中所说明的倒装芯片激光接合设备的按压构件200的平面视图。
根据本发明实施例的倒装芯片激光接合设备是一种用于通过使用激光束将半导体芯片20接合到呈倒装芯片形式的衬底10的设备。焊料凸块11和焊料凸块21分别形成于衬底10和半导体芯片20上，且当焊料凸块11和焊料凸块21由激光束传递的能量立即融化且随后硬化时，半导体芯片20接合到衬底10。
参考图1和图2，根据本发明实施例的倒装芯片激光接合设备包含固定构件100、按压构件200、提升构件300以及激光头400。
固定构件100固定衬底10，待接合到衬底10的半导体芯片20安置在衬底10上。根据本发明实施例的固定构件100通过使用真空吸附方法支撑衬底10的下表面来固定衬底10。将在与形成焊料凸块11的位置相对应的精确位置处布置半导体芯片20的衬底10供应到固定构件100，且通过固定构件100吸附并固定。在将焊剂涂布在形成于半导体芯片20的下表面上的焊料凸块21上之后，将半导体芯片20安置在衬底10上。半导体芯片20随后经由焊剂的粘度或粘附特性暂时粘附到衬底10。除非施加相对大的振动量或相对大的外力，否则布置在衬底10上的半导体芯片20并不因焊剂的操作而摇晃且维持在其位置处。
按压构件200安置在固定构件100上方。按压构件200包含透明部分210和掩模部分220。透明部分210可由透射激光束的透明材料形成。广泛地用以透射激光束的石英可用作透明部分210的材料。掩模部分220可由激光束无法穿透的不透光材料形成。掩模部分220用以支撑透明部分210。透明部分210可安置在以一对一方式分别与衬底10的半导体芯片20相对应的区域中，其中通过使用固定构件100将衬底10固定在透明部分210下方，且掩模部分220用以平面地支撑透明部分210。另外，如上文所描述，掩模部分220可由不透光材料形成以防止激光束穿过除透明部分210以外的区域。透明部分210的下表面是平面。当通过使用按压构件200经由随后将描述的提升构件300的操作来按压半导体芯片20时，半导体芯片20经由具有平坦下表面的透明部分210均匀且平面地按压。
提升构件300执行将固定构件100上下垂直提升的功能。当衬底10由固定构件100吸附且固定到所述固定构件100时，提升构件300将固定构件100向上提升以使固定构件100紧紧接触到按压构件200，进而按压半导体芯片20。下文中，经由提升构件300的操作在固定构件100与按压构件200之间受按压的半导体芯片20将称为”受按压的半导体芯片20”。
激光头400安置在按压构件200上方。激光头400产生激光束并使激光束穿过按压构件200的透明部分210透射到按压构件200的透明部分210下方的半导体芯片20。当衬底10的焊料凸块11和半导体芯片20的焊料凸块21由于激光束传递的能量立即融化时，半导体芯片20接合到衬底10。
激光头400安装在头部传送构件500上。头部传送构件500使激光头400在水平方向上传送。从按压构件200上方，激光头400可同时将激光束照射到多个透明部分210或可将激光束依次照射到透明部分210中的每一个。头部传送构件500将激光头400传送到激光束将照射的位置。
下文中，将描述用于通过使用根据本发明实施例的如上文所描述来配置的倒装芯片激光接合设备将半导体芯片20接合到衬底10的倒装芯片激光接合方法。
首先，根据半导体芯片20待接合在衬底10上的接合位置将半导体芯片20安置在衬底10的上表面上(步骤(a))。通过将形成于半导体芯片20的下表面上的焊料凸块21浸渍到焊剂中或将焊剂涂覆到焊料凸块21来利用焊剂涂布半导体芯片20的焊料凸块21而将半导体芯片20布置在衬底10上的相应位置上。此处，衬底10的焊料凸块11以及半导体芯片20的焊料凸块21面对彼此以彼此连接。如上文所描述，半导体芯片20现经由焊剂的粘度或粘附力暂时粘附到衬底10的上表面。
接下来，将安置有半导体芯片20的衬底10安置在固定构件100上以使得衬底10的下表面经由固定构件100固定(步骤(b))。固定构件100通过使用真空吸附方法吸附衬底10的下表面来固定衬底10。此处，当半导体芯片20极薄且具有内应力时，半导体芯片20如图3中所说明可能翘曲或弯曲。
当衬底10如上文所描述固定到固定构件100时，通过使用提升构件300将固定构件100向上提升来使半导体芯片20紧紧接触到按压构件200而使半导体芯片20按压抵靠衬底10(步骤(c))。由于衬底10和半导体芯片20根据提升构件300的操作在按压构件200与固定构件100之间彼此紧紧接触，因此已弯曲的半导体芯片20平滑化以面对如图4中所说明的衬底10。
在此状态中，激光头400照射激光束以使半导体芯片20的焊料凸块21与衬底10的焊料凸块11彼此接合(步骤(d))。由激光头400照射的激光束经由按压构件200的透明部分210透射到受按压的半导体芯片20。衬底10的焊料凸块11以及受按压的半导体芯片20的焊料凸块21由于激光束传递的能量立即融化且随后硬化，因此半导体芯片20接合到如图4中所说明的衬底10。虽然热变形可能根据半导体芯片20或衬底10因激光束所致的瞬时温度升高而发生，但由于按压构件200的透明部分210将半导体芯片20向下按压，因此半导体芯片20稳定地接合到衬底10，同时防止半导体芯片20因热变形所致的翘曲或弯曲。以这种方式，可防止焊料凸块11和焊料凸块21的接合缺陷。
如上文所描述，按压构件200包含透明部分210和掩模部分220，且激光束用以仅透射透明部分210。相应地，由激光头400照射的激光束穿过按压构件200的透明部分210且仅透射到安置在透明部分210之下的半导体芯片20。通过使用包含如上文所描述的透明部分210和掩模部分220的按压构件200，可防止激光束照射到衬底10无需激光束能量传递的部分上。
另外，还可执行步骤(d)以使得能够通过使用如上文所描述的按压构件200将多个半导体芯片20同时接合到衬底10。通过操作激光头400增大激光束的照射面积可使激光束同时照射到两个或大于两个半导体芯片20上。由于按压构件200的掩模部分220防止激光束穿过除与如上文所描述的半导体芯片20相对应的区域以外的区域，因此即使当激光束照射到相对宽的区域上时，激光束的能量仍可仅传递到待接合的半导体芯片20。通过使用上述方法将多个半导体芯片20与衬底10同时接合可提高整体产率。根据情况，还可执行步骤(d)以使得通过使用按压构件200按压的所有半导体芯片20能够通过将激光束照射到如图2中所说明的整个按压构件200来同时接合到衬底10。
另外，根据情况，可通过使用上文所描述的头部传送构件500传送激光头400来执行步骤(d)。可执行步骤(d)，以使得通过使用头部传送构件500传送激光头部400能够使每一个半导体芯片20同时依次接合到衬底10。类似地，可通过使两个半导体芯片20同时接合到衬底10或通过将激光束同时照射到一行半导体芯片20来执行步骤(d)。
如上文所描述，当通过使用按压构件200同时按压多个半导体芯片20时，仅激光束待照射的区域可通过增大或减小激光束照射区域来修改，且因此，根据本公开的倒装芯片激光接合设备和倒装芯片激光接合方法，可快速执行半导体芯片20的接合操作。
同时，即使在未使用头部传送构件500时，仍可依次执行一或多个半导体芯片20上的接合操作。即便激光头400固定，但当激光束照射的位置和区域配置成根据激光头400的内部操作进行光学调节时，仍可通过将激光束依次照射到半导体芯片20且还通过使用包含处于固定状态的激光头400的倒装芯片激光接合设备来执行步骤(d)。
尽管已参考优选实施例来描述本公开，但本公开的范围并不限于上文所描述和说明的结构。
举例来说，当将提升构件300描述为使固定构件100提升或下降时，倒装芯片激光接合设备还可用以使得提升构件能够使按压构件提升或下降。在这种情况下，当将衬底固定到固定构件时，通过在提升构件使按压构件下降时按压半导体芯片抵靠衬底来执行步骤(c)。
另外，按压构件对受按压半导体芯片的按压力可配置成通过使用提升构件来调节。也可在按压构件固定时通过使用提升构件调节固定构件的增大压力或在固定构件固定时通过使用提升构件调节使按压构件下降的下降压力来调节衬底与半导体芯片之间的按压力。
另外，虽然上文描述通过使用提升构件300向上提升固定构件100来按压衬底10上的所有半导体芯片20且同时或依次照射激光束以接合半导体芯片20，但是倒装芯片激光接合设备也可配置成使得衬底10上的半导体芯片20分组成预设数量的组，且通过使用按压构件依次按压半导体芯片20的每一组，且随后通过使用激光头来接合。在这种情况下，根据本公开的倒装芯片激光接合设备还包含水平传送固定构件的固定单元传送构件。根据如上文所描述配置的倒装芯片激光接合设备，通过以下操作将半导体芯片接合到衬底：反复执行通过使用固定单元传送构件在水平方向上依次传送固定构件，通过使用提升构件来提升固定构件以将各组半导体芯片中的一些按压为待接合的受按压半导体芯片，且随后使固定构件下降。
另外，尽管上文将按压构件200描述为包含透明部分210和掩模部分220，但也可使用不具有掩模部分的按压构件。在这种情况下，按压构件的整个主要部分可由透明部分形成且用以按压多个半导体芯片，且可将激光束照射到所有多个半导体芯片。
根据本公开的倒装芯片激光接合设备以及倒装芯片激光接合方法，即使是弯曲或有可能弯曲的半导体芯片也可以通过在按压半导体芯片时利用激光接合将半导体芯片接合到衬底来接合到衬底而不发生焊料凸块的接触失效。
应理解，本文中所描述的实施例应认为仅具有描述性意义，而非出于限制性目的。对每一实施例内的特征或方面的描述通常应认为可用于其它实施例中的其它类似特征或方面。
虽然已参考附图描述了一或多个实施例，但是本领域的一般技术人员将理解，可以在不脱离如由以上权利要求所界定的精神和范围的情况下在本文中进行形式和细节上的各种改变。

Claims (16)

1.一种倒装芯片激光接合设备，其特征在于，包括：
固定构件，用以固定衬底的下表面，其中待接合到所述衬底的上表面的多个半导体芯片布置在所述衬底上；
按压构件，布置在所述固定构件上方，所述按压构件包括激光束穿过的透明部分；
提升构件，用以使所述固定构件和所述按压构件中的一个相对于所述固定构件和所述按压构件中的另一个提升或下降，从而使得受按压的所述多个半导体芯片中的至少一些按压抵靠所述衬底；以及
激光头，用以使所述激光束穿过所述按压构件的所述透明部分而照射到在所述按压构件与所述固定构件之间受按压的半导体芯片，以便使所述半导体芯片的焊料凸块与所述衬底的焊料凸块彼此接合。
2.根据权利要求1所述的倒装芯片激光接合设备，其中所述按压构件还包括由不透光材料形成且支撑所述透明部分的掩模部分，
其中所述按压构件的所述透明部分安置在与受按压的所述半导体芯片相对应的区域中。
3.根据权利要求2所述的倒装芯片激光接合设备，其中所述激光头将激光束依次照射到受按压的所述半导体芯片中的每一个。
4.根据权利要求2所述的倒装芯片激光接合设备，其中所述激光头将激光束同时照射到受按压的所述半导体芯片中的至少两个。
5.根据权利要求2所述的倒装芯片激光接合设备，其中所述激光头将激光束同时照射到所有受按压的所述半导体芯片。
6.根据权利要求3所述的倒装芯片激光接合设备，还包括用以传送所述激光头的头部传送构件。
7.根据权利要求1所述的倒装芯片激光接合设备，其中所述提升构件使所述按压构件相对于所述固定构件提升或下降。
8.根据权利要求1所述的倒装芯片激光接合设备，其中所述提升构件使所述固定构件相对于所述按压构件提升或下降。
9.根据权利要求1所述的倒装芯片激光接合设备，其中所述固定构件吸附所述衬底的所述下表面以固定所述衬底的下表面。
10.一种倒装芯片激光接合方法，其特征在于，包括：
步骤a，根据半导体芯片待接合在衬底上的接合位置，将多个半导体芯片安置在所述衬底的上表面上；
步骤b，将所述衬底的下表面固定到固定构件，所述多个半导体芯片安置在所衬底上；
步骤c，通过使用提升构件使按压构件和所述固定构件中的一个相对于所述按压构件和所述固定构件中的另一个提升或下降来将受按压的所述多个半导体芯片中的至少一些按压抵靠所述衬底，其中所述按压构件安置在所述固定构件上方且包括激光束穿过的透明部分；以及
步骤d，通过使用激光头，使激光束穿过所述按压构件的所述透明部分照射到在所述按压构件与所述固定构件之间的所述受按压的半导体芯片，以便使所述半导体芯片的焊料凸块与所述衬底的焊料凸块彼此接合。
11.根据权利要求10所述的倒装芯片激光接合方法，其中通过使用所述按压构件来执行步骤c，所述按压构件包括安置在与受按压的所述半导体芯片相对应的区域中的所述透明部分以及由不透光材料形成且支撑所述透明部分的掩模部分。
12.根据权利要求11所述的倒装芯片激光接合方法，其中通过使用所述激光头将激光束依次照射到受按压的所述半导体芯片中的每一个来执行步骤d。
13.根据权利要求11所述的倒装芯片激光接合方法，其中通过使用所述激光头将激光束同时照射到受按压的所述半导体芯片中的至少两个来执行步骤d。
14.根据权利要求11所述的倒装芯片激光接合方法，其中通过使用所述激光头将激光束同时照射到所有受按压的所述半导体芯片来执行步骤d。
15.根据权利要求10所述的倒装芯片激光接合方法，其中当所述提升构件使所述按压构件相对于所述固定构件提升或下降时执行步骤c。
16.根据权利要求10所述的倒装芯片激光接合方法，其中当所述提升构件使所述固定构件相对于所述按压构件提升或下降时执行步骤c。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563125A (zh) * 2020-11-24 2021-03-26 深圳市联得自动化装备股份有限公司 晶粒键合设备和晶粒键合方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102182781B1 (ko) * 2019-01-04 2020-11-25 주식회사 프로텍 레이저 본딩 장치용 마스크 교체 유닛
KR102208065B1 (ko) * 2019-01-04 2021-01-27 주식회사 프로텍 플립칩 레이저 본딩 시스템
KR102252552B1 (ko) * 2019-05-03 2021-05-17 주식회사 프로텍 플립칩 레이저 본딩 시스템
KR102298753B1 (ko) * 2019-10-01 2021-09-07 레이저쎌 주식회사 클램핑 장치
KR20210062376A (ko) * 2019-11-21 2021-05-31 레이저쎌 주식회사 레이저 리플로우 장치 및 레이저 리플로우 방법
US11848398B2 (en) 2019-12-29 2023-12-19 Seoul Viosys Co., Ltd. Flat bonding method of light emitting device and flat bonder for light emitting device
KR102394825B1 (ko) * 2020-04-23 2022-05-06 주식회사 프로텍 빅셀 소자를 이용한 플립칩 본딩 장치
KR20220005723A (ko) * 2020-07-07 2022-01-14 주식회사 프로텍 마스크를 이용하는 구리 필러 기판 본딩 방법
KR20220005724A (ko) * 2020-07-07 2022-01-14 주식회사 프로텍 가압식 구리 필러 기판 본딩 방법
JP2022020377A (ja) 2020-07-20 2022-02-01 キオクシア株式会社 半導体装置及び半導体装置の製造方法
KR102470931B1 (ko) * 2020-12-30 2022-11-29 주식회사 비아트론 레이저 본딩용 마스크 모듈 및 이를 포함하는 레이저 본딩 장치
KR102470934B1 (ko) * 2020-12-31 2022-11-28 주식회사 비아트론 레이저 본딩용 가열 장치
TWI807348B (zh) * 2021-06-21 2023-07-01 矽品精密工業股份有限公司 覆晶作業及其應用之接合設備
US11688718B2 (en) 2021-09-07 2023-06-27 STATS ChipPAC Pte. Ltd. Semiconductor device and method of controlling warpage during LAB
KR20230163833A (ko) 2022-05-24 2023-12-01 레이저쎌 주식회사 진공챔버를 구비한 가압 방식의 레이저 리플로우 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08236574A (ja) * 1995-02-22 1996-09-13 Ricoh Co Ltd 半導体装置の組立方法
JP2001347387A (ja) * 2000-06-09 2001-12-18 Ishikawajima Harima Heavy Ind Co Ltd レーザ加工ヘッド
KR100662820B1 (ko) * 2005-09-27 2006-12-28 삼성테크윈 주식회사 플립칩 본더
CN1913115A (zh) * 2005-08-11 2007-02-14 三星Techwin株式会社 用于倒装芯片接合的方法和装置
CN102861959A (zh) * 2011-07-06 2013-01-09 三星电子株式会社 使用激光的半导体芯片移除设备和移除半导体芯片的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19751487A1 (de) * 1997-11-20 1999-06-02 Pac Tech Gmbh Verfahren und Vorrichtung zur thermischen Verbindung von Anschlußflächen zweier Substrate
JP2001148403A (ja) 1999-11-18 2001-05-29 Seiko Epson Corp 半導体チップの実装方法および装置
US7372892B2 (en) 2002-04-29 2008-05-13 Interdigital Technology Corporation Simple and robust digital code tracking loop for wireless communication systems
TWI234867B (en) * 2003-06-03 2005-06-21 Gigno Technology Co Ltd Flip-chip attach structure and method
JP4056978B2 (ja) * 2004-01-19 2008-03-05 株式会社新川 ダイボンディング方法及びその装置
KR20080101329A (ko) * 2007-05-17 2008-11-21 서울산업대학교 산학협력단 반도체칩 접합장치
CN102204419A (zh) * 2008-10-31 2011-09-28 东丽株式会社 电子部件和挠性薄膜基板的接合方法及接合装置
US8967452B2 (en) * 2012-04-17 2015-03-03 Asm Technology Singapore Pte Ltd Thermal compression bonding of semiconductor chips
JP2014007328A (ja) * 2012-06-26 2014-01-16 Shibuya Kogyo Co Ltd ボンディング装置
JP6019817B2 (ja) * 2012-06-29 2016-11-02 澁谷工業株式会社 ボンディング装置
TWI610411B (zh) * 2014-08-14 2018-01-01 艾馬克科技公司 用於半導體晶粒互連的雷射輔助接合

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08236574A (ja) * 1995-02-22 1996-09-13 Ricoh Co Ltd 半導体装置の組立方法
JP2001347387A (ja) * 2000-06-09 2001-12-18 Ishikawajima Harima Heavy Ind Co Ltd レーザ加工ヘッド
CN1913115A (zh) * 2005-08-11 2007-02-14 三星Techwin株式会社 用于倒装芯片接合的方法和装置
KR100662820B1 (ko) * 2005-09-27 2006-12-28 삼성테크윈 주식회사 플립칩 본더
CN102861959A (zh) * 2011-07-06 2013-01-09 三星电子株式会社 使用激光的半导体芯片移除设备和移除半导体芯片的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563125A (zh) * 2020-11-24 2021-03-26 深圳市联得自动化装备股份有限公司 晶粒键合设备和晶粒键合方法

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