JPWO2007135906A1 - 層間絶縁膜のドライエッチング方法 - Google Patents
層間絶縁膜のドライエッチング方法 Download PDFInfo
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- JPWO2007135906A1 JPWO2007135906A1 JP2008516618A JP2008516618A JPWO2007135906A1 JP WO2007135906 A1 JPWO2007135906 A1 JP WO2007135906A1 JP 2008516618 A JP2008516618 A JP 2008516618A JP 2008516618 A JP2008516618 A JP 2008516618A JP WO2007135906 A1 JPWO2007135906 A1 JP WO2007135906A1
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- JP
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- Prior art keywords
- gas
- etching
- interlayer insulating
- insulating film
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000011229 interlayer Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000001312 dry etching Methods 0.000 title claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 116
- 229920006254 polymer film Polymers 0.000 claims abstract description 24
- 238000001228 spectrum Methods 0.000 claims abstract description 9
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 149
- 239000000463 material Substances 0.000 claims description 23
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 8
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- -1 NO x Inorganic materials 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 35
- 239000003990 capacitor Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Abstract
Description
(1)CF4=20sccm、N2=30sccm
(2)CF4=32sccm、N2=48sccm
(3)CF4=48sccm、N2=72sccm
(4)CF4=60sccm、N2=90sccm
(5)CF4=80sccm、N2=120sccm
に設定して、エッチングガスの混合比を変化させた。なお、(4)のエッチングガス条件は、実施例2と同一である。各エッチングガス条件において、層間絶縁膜及びレジストのエッチングレートを測定し、選択比を求めた。結果を図4に示す。また、(1)、(2)、(3)、(5)の各場合における基板の断面SEM写真を、それぞれ図5(a)、(b)、(c)、(d)に示す。
(比較例1)
(a)C3F8/Ar/N2/CH4=16/50/20/26
(b)C3F8/Ar/N2/CH4=30/50/20/26
(c)C3F8/Ar/N2/CH4=16/100/20/26
(d)C3F8/Ar/N2/CH4=16/50/20/40
(e)C3F8/Ar/N2/CH4=16/50/50/26
各条件における基板の断面SEM写真を図6に示す。また、各条件における層間絶縁膜及びレジストのエッチングレートを測定し、この結果から、各条件における選択比を求めた。結果を図7に示す。
4 ガス導入手段 11 真空チャンバー
12 真空排気手段 13 基板処理室
14 プラズマ発生室 21 基板電極
22 絶縁体 23 支持台
24 ブロッキングコンデンサー 25 高周波電源
31 天板 32 可変コンデンサー
33 高周波電源 34 分岐点
41 ガス導入経路 42 ガス流量制御手段
43 ガス源 51 磁場コイル
52 アンテナコイル S 基板
Claims (9)
- エッチングガスにより、層間絶縁膜上に設けられたArFレジスト又はKrFレジスト上にポリマー膜を形成しながら、層間絶縁膜を微細加工する層間絶縁膜のドライエッチング方法であって、前記エッチングガスを0.5Pa以下の圧力下で導入し、1200cm−1付近にC−F結合のピーク、1600cm−1付近にC−N結合のピーク及び3300cm−1付近にC−H結合のピーク(フーリエ変換赤外分光光度計で測定したスペクトル)を有するポリマー膜を形成しながらエッチングすることを特徴とする層間絶縁膜のドライエッチング方法。
- 前記エッチングガスが、CF系ガスと、N含有ガスと、低級炭化水素ガスとからなるエッチングガスであることを特徴とする請求項1記載の層間絶縁膜のドライエッチング方法。
- 前記エッチングガスが、CxFyHzガスと、N含有ガスとからなるエッチングガスであることを特徴とする請求項1記載の層間絶縁膜のドライエッチング方法。
- 前記CF系ガスが、CF4、C3F8、C2F6、C4F8、C5F8及びCxFyIから選ばれた少なくとも一種のガスであることを特徴とする請求項2に記載の層間絶縁膜のドライエッチング方法。
- 前記低級炭化水素がCH4、C2H6、C3H8、C4H10、またはC2H2であることを特徴とする請求項2〜4のいずれかに記載の層間絶縁膜のドライエッチング方法。
- 前記CxFyHzガスが、CHF3ガスであることを特徴とする請求項3に記載の層間絶縁膜のドライエッチング方法。
- 前記N含有ガスが、窒素ガス、NOx、NH3、メチルアミン、ジメチルアミンから選ばれた少なくとも1種のガスであることを特徴とする請求項2又は3のいずれかに記載の層間絶縁膜のドライエッチング方法。
- 前記CxFyIガスが、C3F7Iガス又はCF3Iガスであることを特徴とする請求項4に記載の層間絶縁膜のドライエッチング方法。
- 前記層間絶縁膜が、SiOCH系材料からなることを特徴とする請求項1〜8のいずれかに記載の層間絶縁膜のドライエッチング方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008516618A JP4950188B2 (ja) | 2006-05-24 | 2007-05-16 | 層間絶縁膜のドライエッチング方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006143868 | 2006-05-24 | ||
JP2006143868 | 2006-05-24 | ||
JP2008516618A JP4950188B2 (ja) | 2006-05-24 | 2007-05-16 | 層間絶縁膜のドライエッチング方法 |
PCT/JP2007/060010 WO2007135906A1 (ja) | 2006-05-24 | 2007-05-16 | 層間絶縁膜のドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007135906A1 true JPWO2007135906A1 (ja) | 2009-10-01 |
JP4950188B2 JP4950188B2 (ja) | 2012-06-13 |
Family
ID=38723220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008516618A Active JP4950188B2 (ja) | 2006-05-24 | 2007-05-16 | 層間絶縁膜のドライエッチング方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100219158A1 (ja) |
JP (1) | JP4950188B2 (ja) |
KR (1) | KR101190137B1 (ja) |
CN (1) | CN101454878B (ja) |
DE (1) | DE112007001243B4 (ja) |
TW (1) | TWI437633B (ja) |
WO (1) | WO2007135906A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009193988A (ja) * | 2008-02-12 | 2009-08-27 | Tokyo Electron Ltd | プラズマエッチング方法及びコンピュータ記憶媒体 |
US7637269B1 (en) * | 2009-07-29 | 2009-12-29 | Tokyo Electron Limited | Low damage method for ashing a substrate using CO2/CO-based process |
JP2012096823A (ja) * | 2010-11-01 | 2012-05-24 | Takagi Seiko Corp | 液体貯蔵容器 |
KR101102495B1 (ko) * | 2011-08-11 | 2012-01-05 | 주식회사 미로 | 가로등 |
WO2020195559A1 (ja) | 2019-03-22 | 2020-10-01 | セントラル硝子株式会社 | ドライエッチング方法及び半導体デバイスの製造方法 |
CN113544823B (zh) * | 2020-02-10 | 2024-04-12 | 株式会社日立高新技术 | 等离子处理方法 |
US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
JP4067357B2 (ja) * | 2002-08-05 | 2008-03-26 | 株式会社アルバック | エッチング方法 |
JP4538209B2 (ja) * | 2003-08-28 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
JP4643916B2 (ja) * | 2004-03-02 | 2011-03-02 | 株式会社アルバック | 層間絶縁膜のドライエッチング方法及びその装置 |
JP2007537602A (ja) * | 2004-05-11 | 2007-12-20 | アプライド マテリアルズ インコーポレイテッド | フルオロカーボン化学エッチングにおけるh2添加物を使用しての炭素ドープ酸化ケイ素エッチング |
US20060051965A1 (en) * | 2004-09-07 | 2006-03-09 | Lam Research Corporation | Methods of etching photoresist on substrates |
JP4537818B2 (ja) * | 2004-09-30 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
US7794880B2 (en) * | 2005-11-16 | 2010-09-14 | California Institute Of Technology | Fluorination of multi-layered carbon nanomaterials |
-
2007
- 2007-05-15 TW TW096117249A patent/TWI437633B/zh active
- 2007-05-16 WO PCT/JP2007/060010 patent/WO2007135906A1/ja active Application Filing
- 2007-05-16 CN CN2007800189986A patent/CN101454878B/zh active Active
- 2007-05-16 JP JP2008516618A patent/JP4950188B2/ja active Active
- 2007-05-16 US US12/301,786 patent/US20100219158A1/en not_active Abandoned
- 2007-05-16 KR KR1020087028192A patent/KR101190137B1/ko active IP Right Grant
- 2007-05-16 DE DE112007001243.9T patent/DE112007001243B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
US20100219158A1 (en) | 2010-09-02 |
DE112007001243B4 (de) | 2015-01-22 |
CN101454878B (zh) | 2011-03-23 |
KR101190137B1 (ko) | 2012-10-12 |
JP4950188B2 (ja) | 2012-06-13 |
KR20090012329A (ko) | 2009-02-03 |
DE112007001243T5 (de) | 2009-05-28 |
TWI437633B (zh) | 2014-05-11 |
WO2007135906A1 (ja) | 2007-11-29 |
CN101454878A (zh) | 2009-06-10 |
TW200809961A (en) | 2008-02-16 |
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