CN1790667A - 通孔活性离子刻蚀方法 - Google Patents
通孔活性离子刻蚀方法 Download PDFInfo
- Publication number
- CN1790667A CN1790667A CN200510124653.1A CN200510124653A CN1790667A CN 1790667 A CN1790667 A CN 1790667A CN 200510124653 A CN200510124653 A CN 200510124653A CN 1790667 A CN1790667 A CN 1790667A
- Authority
- CN
- China
- Prior art keywords
- less
- air
- tetrafluoromethane
- flow
- cover layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 84
- 238000001020 plasma etching Methods 0.000 title description 20
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 67
- 238000005530 etching Methods 0.000 claims abstract description 57
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000004020 conductor Substances 0.000 claims abstract description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 25
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 238000012545 processing Methods 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
电介质层22 | 光致抗蚀剂阶段1 | 光致抗蚀剂阶段2 | 覆盖层20(~1000) | 覆盖层20(~3000) | |
压力(mT) | 80 | 120 | 400 | 150 | 150 |
RF能量(w)27MHz2MHz | 12002700 | 1000200 | 01600 | 15001000 | 15001000 |
气流(sccm)CF4CHF3COO2Ar | 25-400200-2400400 | 000900-11000 | 7-1500900-11000 | 170-21053-73080-110400 | 170-21053-7307-13400 |
气流比率:CF4/COCF4/O2CF4/CHF3 | 0.104-0.200-- | --- | -0.006-0.016- | 2.33-3.96 | 2.33-3.96 |
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/904,533 US7045464B1 (en) | 2004-11-15 | 2004-11-15 | Via reactive ion etching process |
US10/904,533 | 2004-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1790667A true CN1790667A (zh) | 2006-06-21 |
CN100356548C CN100356548C (zh) | 2007-12-19 |
Family
ID=36318084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101246531A Expired - Fee Related CN100356548C (zh) | 2004-11-15 | 2005-11-14 | 通孔活性离子刻蚀方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7045464B1 (zh) |
CN (1) | CN100356548C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103107090A (zh) * | 2011-11-14 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | 制造半导体器件的方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100617056B1 (ko) * | 2004-12-30 | 2006-08-30 | 동부일렉트로닉스 주식회사 | 비어 식각시 어텍을 방지하는 방법 |
US7510965B2 (en) * | 2006-11-30 | 2009-03-31 | United Microelectronics Corp. | Method for fabricating a dual damascene structure |
US7470616B1 (en) | 2008-05-15 | 2008-12-30 | International Business Machines Corporation | Damascene wiring fabrication methods incorporating dielectric cap etch process with hard mask retention |
CN103681462B (zh) * | 2012-09-12 | 2017-08-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
US10535566B2 (en) | 2016-04-28 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5302240A (en) * | 1991-01-22 | 1994-04-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US5221424A (en) * | 1991-11-21 | 1993-06-22 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch |
US6325861B1 (en) * | 1998-09-18 | 2001-12-04 | Applied Materials, Inc. | Method for etching and cleaning a substrate |
JP3586605B2 (ja) * | 1999-12-21 | 2004-11-10 | Necエレクトロニクス株式会社 | シリコン窒化膜のエッチング方法及び半導体装置の製造方法 |
US6376384B1 (en) * | 2000-04-24 | 2002-04-23 | Vanguard International Semiconductor Corporation | Multiple etch contact etching method incorporating post contact etch etching |
US6638871B2 (en) * | 2002-01-10 | 2003-10-28 | United Microlectronics Corp. | Method for forming openings in low dielectric constant material layer |
US6838300B2 (en) * | 2003-02-04 | 2005-01-04 | Texas Instruments Incorporated | Chemical treatment of low-k dielectric films |
US7115517B2 (en) * | 2003-04-07 | 2006-10-03 | Applied Materials, Inc. | Method of fabricating a dual damascene interconnect structure |
US20050059234A1 (en) * | 2003-09-16 | 2005-03-17 | Applied Materials, Inc. | Method of fabricating a dual damascene interconnect structure |
KR100670662B1 (ko) * | 2003-11-28 | 2007-01-17 | 주식회사 하이닉스반도체 | 반도체소자 제조 방법 |
-
2004
- 2004-11-15 US US10/904,533 patent/US7045464B1/en not_active Expired - Fee Related
-
2005
- 2005-11-14 CN CNB2005101246531A patent/CN100356548C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103107090A (zh) * | 2011-11-14 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | 制造半导体器件的方法 |
CN103107090B (zh) * | 2011-11-14 | 2016-04-06 | 中芯国际集成电路制造(上海)有限公司 | 制造半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060105572A1 (en) | 2006-05-18 |
CN100356548C (zh) | 2007-12-19 |
US7045464B1 (en) | 2006-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: IBM (CHINA) CO., LTD. Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORP. Effective date: 20101101 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: NEW YORK, UNITED STATES TO: 201203 7/F, BUILDING 10, ZHANGJIANG INNOVATION PARK, NO.399, KEYUAN ROAD, ZHANGJIANG HIGH-TECH PARK, PUDONG NEW DISTRICT, SHANGHAI, CHINA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101101 Address after: 201203 Chinese Shanghai Pudong New Area Zhang Jiang high tech Park Keyuan Road No. 399 Zhang Jiang Innovation Park Building No. 10 7 floor Patentee after: International Business Machines (China) Co., Ltd. Address before: American New York Patentee before: International Business Machines Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071219 Termination date: 20171114 |
|
CF01 | Termination of patent right due to non-payment of annual fee |