JP2005072352A - 層間絶縁膜のドライエッチング方法 - Google Patents
層間絶縁膜のドライエッチング方法 Download PDFInfo
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- JP2005072352A JP2005072352A JP2003301477A JP2003301477A JP2005072352A JP 2005072352 A JP2005072352 A JP 2005072352A JP 2003301477 A JP2003301477 A JP 2003301477A JP 2003301477 A JP2003301477 A JP 2003301477A JP 2005072352 A JP2005072352 A JP 2005072352A
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- interlayer insulating
- etching
- insulating film
- gas
- dry etching
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- 239000011229 interlayer Substances 0.000 title claims abstract description 68
- 238000001312 dry etching Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 35
- 238000005530 etching Methods 0.000 claims abstract description 85
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 24
- 238000009413 insulation Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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Abstract
【解決手段】 エッチングガスとして、直鎖フロロカーボンガスを用い、同じエッチング条件で連続して反射防止膜32と層間絶縁膜31とを一括してエッチングするようにした。
【選択図】 図2
Description
11 真空チャンバ
12 プラズマ発生部
13 基板電極部
31 層間絶縁膜
32 反射防止膜
33 レジストパターン
S 処理基板
Claims (5)
- 上面に反射防止膜を形成した比誘電率の低い層間絶縁膜をドライエッチングし、配線用のホール、トレンチを微細加工する層間絶縁膜のドライエッチング方法において、
エッチングガスとして、直鎖フロロカーボンガスを用い、反射防止膜と層間絶縁膜とを同じエッチング条件で連続してエッチングするようにしたことを特徴とする層間絶縁膜のドライエッチング方法。 - 前記フロロカーボンガスの比率を、総流量に対して60%以上にしたことを特徴とする請求項1記載の層間絶縁膜のドライエッチング方法。
- 前記ドライエッチングを1Pa以下の作動圧力下で行うことを特徴とする請求項1または請求項2記載の層間絶縁膜のドライエッチング方法。
- 前記エッチングガスに添加するガス種として、不活性ガスを用いることを特徴とする請求項1乃至請求項3のいずれかに記載の層間絶縁膜のドライエッチング方法。
- 前記層間絶縁膜は、SiOCH或いはSiOC系材料である特徴とする請求項1乃至請求項4のいずれかに記載の層間絶縁膜のドライエッチング方法。
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JP2003301477A JP4500023B2 (ja) | 2003-08-26 | 2003-08-26 | 層間絶縁膜のドライエッチング方法 |
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JP2003301477A JP4500023B2 (ja) | 2003-08-26 | 2003-08-26 | 層間絶縁膜のドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005072352A true JP2005072352A (ja) | 2005-03-17 |
JP4500023B2 JP4500023B2 (ja) | 2010-07-14 |
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JP2003301477A Expired - Fee Related JP4500023B2 (ja) | 2003-08-26 | 2003-08-26 | 層間絶縁膜のドライエッチング方法 |
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JP (1) | JP4500023B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008060478A (ja) * | 2006-09-01 | 2008-03-13 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及びその製造方法 |
JP2011096791A (ja) * | 2009-10-28 | 2011-05-12 | Ulvac Japan Ltd | 貫通孔形成方法 |
US9093388B2 (en) | 2010-02-01 | 2015-07-28 | Central Glass Company, Limited | Dry etching agent and dry etching method using the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06342744A (ja) * | 1993-03-26 | 1994-12-13 | Fujitsu Ltd | a−Cによる反射防止 |
JP2002289577A (ja) * | 2001-03-27 | 2002-10-04 | Ulvac Japan Ltd | 基板上に堆積した有機珪素化合物を含有する材料の薄膜のエッチング法 |
JP2003133287A (ja) * | 2001-10-30 | 2003-05-09 | Matsushita Electric Ind Co Ltd | ドライエッチング方法 |
-
2003
- 2003-08-26 JP JP2003301477A patent/JP4500023B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06342744A (ja) * | 1993-03-26 | 1994-12-13 | Fujitsu Ltd | a−Cによる反射防止 |
JP2002289577A (ja) * | 2001-03-27 | 2002-10-04 | Ulvac Japan Ltd | 基板上に堆積した有機珪素化合物を含有する材料の薄膜のエッチング法 |
JP2003133287A (ja) * | 2001-10-30 | 2003-05-09 | Matsushita Electric Ind Co Ltd | ドライエッチング方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008060478A (ja) * | 2006-09-01 | 2008-03-13 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及びその製造方法 |
JP2011096791A (ja) * | 2009-10-28 | 2011-05-12 | Ulvac Japan Ltd | 貫通孔形成方法 |
US9093388B2 (en) | 2010-02-01 | 2015-07-28 | Central Glass Company, Limited | Dry etching agent and dry etching method using the same |
US9230821B2 (en) | 2010-02-01 | 2016-01-05 | Central Glass Company, Limited | Dry etching agent and dry etching method using the same |
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JP4500023B2 (ja) | 2010-07-14 |
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