TW200809961A - Method for dry-etching interlayer insulating film - Google Patents

Method for dry-etching interlayer insulating film Download PDF

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TW200809961A
TW200809961A TW096117249A TW96117249A TW200809961A TW 200809961 A TW200809961 A TW 200809961A TW 096117249 A TW096117249 A TW 096117249A TW 96117249 A TW96117249 A TW 96117249A TW 200809961 A TW200809961 A TW 200809961A
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gas
insulating film
interlayer insulating
etching
dry
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TW096117249A
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Chinese (zh)
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TWI437633B (en
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Yasuhiro Morikawa
Kou-Kou Suu
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Ulvac Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

Abstract

In a method for dry-etching an interlayer insulating film, the interlayer insulating film is microfabricated while forming a polymer film on an ArF resist or a KrF resist arranged on the interlayer insulating film by an etching gas. The etching gas is introduced at a pressure of 0.5 Pa or less, and etching is performed while forming the polymer film having a C-F bonding peak near 1,200 cm-1, a C-N bonding peak near 1,600 cm-1 and a C-H bonding peak (spectrum measured by a Fourier transform infrared spectrophotometer) near 3,300 cm-1.

Description

200809961 九、發明說明 【發明所屬之技術領域】 本發明係關於一種層間絕緣膜之乾蝕刻方法。 【先前技術】 習知以來，雖然大多使用Si〇2作爲層間絕緣膜，但 是爲了解決90nm節點以後、配線延遲的問題，層間絕緣 膜的材料係從Si02轉移爲低電容率材料（l〇w-k)。在蝕 刻這樣的低電容率膜，形成細微加工的溝或孔之情況下， 將適用於高精密加工之較習知所用的KrF光阻材料波長更 短的ArF光阻材料用來作爲蝕刻用光阻材料被提案出來（ 例如參照專利文獻1 )。 [專利文獻1]日本特開2005 -725 1 8號公報（段落（ 0005 )的記載等） 【發明內容】 (發明所欲解決之課題） 然而，ArF光阻材料，一般而言由於缺乏耐電漿性， 在隨著曝光圖案細微化，而在電漿蝕刻中容易受到損傷而 變形。因爲該變形會藉由蝕刻而直接轉印到位在光阻下的 低電容率膜上，對於被細微加工於低電容率膜上的溝或孔 之鈾刻，會發生易於產生條痕等粗糙。 因此，本發明的課題係爲解決上述習知技術的問題點 ，以提供不會發生光阻損傷之層間絕緣膜的乾鈾刻方法。 -4- 200809961 (解決課題之手段） 本發明之層間絕緣膜的乾蝕刻方法，係爲利用蝕刻氣 體，一邊在設置於層間絕緣膜上的ArF光阻或KrF光阻上 形成聚合物膜，一邊細微加工層間絕緣膜之層間絕緣膜的 乾蝕刻方法，其特徵爲：一邊在0.5Pa以下的壓力下導入 前述蝕刻氣體，形成在1 200CIXT1附近具有C-F結合的峰 値、在1600CHT1附近具有C-N結合的峰値、及在3300cm_ 1附近具有C-H結合的峰値（利用傅立葉變換紅外光譜儀 所測定之光譜）之聚合物膜，一邊進行蝕刻。 藉由在〇.5Pa以下的低壓下導入蝕刻氣體，使得根據 蝕刻氣體的反應物種難以產生，並且可以減低光阻的損傷 。又藉由一邊形成聚合物膜，一邊蝕刻，在減低光阻損傷 的同時，可以進行實現高選擇比（層間絕緣膜的蝕刻速率 /光阻的蝕刻速率）之蝕刻。 前述蝕刻氣體係以混合CF系氣體、含有N氣體、及 低級碳化氫氣體的蝕刻氣體爲佳。藉由使用此等蝕刻氣體 ，可以形成具有C-F結合的峰値、C-N結合的峰値、及C-H結合的峰値之聚合物膜，並且可以減低光阻的損傷，又 可以無蝕刻停頓地蝕刻低電容率膜。 又前述蝕刻氣體係以混合CxFyHz氣體與含有N氣體 的蝕刻氣體爲佳。即使是使用此等蝕刻氣體，也可以形成 具有C-F結合的峰値、C-N結合的峰値、及C-H結合的峰 値之聚合物膜，並且可以減低光阻的損傷，又可以無蝕刻 -5- 200809961 停頓地蝕刻低電容率膜。 前述CF系氣體係以選自CF4、c3F C5F8、及CxFyI之至少一種氣體爲佳。 前述低級碳化氫係以CH4、C2H6、C c2H2爲佳。 前述CxFyHz氣體係以CHF3氣體爲佳 前述含有N氣體係以選自氮氣、NO 二甲胺之至少一種氣體爲佳。 又前述CxFyI氣體係以C3F7I氣體或 前述層間絕緣膜係以由S i Ο C Η材料所構成 (發明之效果） 若是根據本發明的話，藉由在低壓下 使光阻損傷變少，其結果爲得到能夠實現 的優異效果。又藉由聚合物膜，因爲可以 ，而可以得到能夠進行選擇比高的蝕刻之: 【實施方式】 (用以實施發明之最佳形態） 第1圖係爲顯示本發明之層間絕緣膜 用的鈾刻裝置1。 1係具備能夠進行藉由低溫、高密度 空處理室1 1。該真空處理室1 1係具備渦 排氣手段1 2。 8 、 C2F6 、 C4F8 、 :3H8、C4H10、或 x、NH3、甲胺、 cf3i氣體爲佳。 爲佳。 進行蝕刻，可以 條痕爲少之蝕刻 減低光阻的損傷 效果。 的乾蝕刻方法所 電漿的蝕刻之真 輪分子泵等真空 -6- 200809961 真空處理室11係由下部的基板處理室13及上部的電 漿產生室14所構成。在基板處理室13內的底部中央處， 設置基板載置部2。基板載置部2係由載置處理基板S的 基板電極21、絕緣體22、及支撐台23所構成，且在基板 電極21與支撐台23之間係介由絕緣體22加以設置。再 者，基板電極21係介由阻塞電容器24而被連接於第1高 頻電源25上，成爲電位性浮置電極而達到負偏壓電位。 與該基板載置部2對向而設置在電漿產生室14上部 的天板3 1，係被固定在電漿產生室1 4的側壁上，並介由 可變電容器3 2而被連接於第2高頻電源上，達到電位性 漂移狀態而形成對向電極。 又在天板3 1上係連接了將蝕刻氣體導入真空處理室 11內之氣體導入手段4的氣體導入路徑41。該氣體導入 路徑4 1係介由氣體流量控制手段42而被連接於氣體源43 上。又在第1圖中，雖然僅顯示了 1個氣體導入路徑，但 是氣體源43的數量係可以因應被用於鈾刻的氣體種類而 加以適當決定，在該情況下配合氣體源43的數量而將氣 體導入路徑4 1分割爲2個以上亦可。 電漿產生室1 4係具備圓筒形的側壁，在該側壁的外 側，也可以設置作爲磁場產生手段的磁場線圈5 1，在該情 況下，藉由磁場線圈5 1，在電漿產生室1 4內形成磁中性 線（未圖示）。 在磁場線圈5 1與電漿產生室1 4側壁的外側之間，係 配置電漿產生用之高頻天線線圈5 2。該高頻天線線圈5 2 200809961 係爲平行天線構造者，並連接於設置在前述之可變電容器 3 2與第2高頻電源3 3之間的給電路徑分叉點3 4，因而構 成爲可以由第2高頻電源33施加電壓。再者，在藉由磁 場線圈5 1形成磁中性線的情況下，順著所形成的磁中性 線增加交變電場後，而在該磁中性線上產生放電電漿。 又在本實施形態中，雖然在天線線圈5 2上係由第2 高頻電源3 3施加電壓，但是也可以不設置分叉路徑，而 是準備第3高頻電源，並使該第3高頻電源與天線線圈5 2 相互連接，以產生電漿。又設置將朝向天線線圈的施加電 壓値成爲既定値的機構亦可。 以下’使用第1圖所示之裝置，針對本發明之層間絕 緣膜的乾蝕刻方法加以說明。 本發明中之被形成在基板S上的層間絕緣膜係爲由電 容率低的材料（low-k材料）所構成之膜。使用例如藉由 旋塗等塗敷成膜之HSQ或MSQ等SiOCH系材料。該材料 係爲多孔質材料亦可。200809961 IX. Description of the Invention [Technical Field] The present invention relates to a dry etching method of an interlayer insulating film. [Prior Art] Since Si〇2 is often used as an interlayer insulating film, the material of the interlayer insulating film is transferred from SiO 2 to a low permittivity material (l〇wk) in order to solve the problem of wiring delay after the 90 nm node. . In the case of etching such a low-permittivity film to form a finely processed groove or hole, an ArF photoresist material having a shorter wavelength than a conventionally used KrF photoresist material suitable for high-precision processing is used as an etching light. A resist material is proposed (for example, refer to Patent Document 1). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-725 No. 18 (the description of paragraph (0005), etc.) [Problems to be Solved by the Invention] However, ArF photoresist materials are generally lacking in plasma resistance. The property is easily deformed by deformation in the plasma etching as the exposure pattern is fined. Since the deformation is directly transferred to the low permittivity film under the photoresist by etching, uranium engraving of the grooves or holes finely processed on the low permittivity film is liable to cause streaks and the like. Accordingly, an object of the present invention is to solve the problems of the above-described conventional techniques to provide a dry uranium engraving method for an interlayer insulating film which does not cause photoresist damage. -4- 200809961 (Means for Solving the Problem) The dry etching method of the interlayer insulating film of the present invention is to form a polymer film on an ArF photoresist or a KrF photoresist provided on the interlayer insulating film by using an etching gas. A method of dry etching an interlayer insulating film of an interlayer insulating film is characterized in that the etching gas is introduced under a pressure of 0.5 Pa or less to form a peak having a CF bond in the vicinity of 1 200 CIXT1 and a CN bond in the vicinity of 1600 CHT1. The peak and the polymer film having a CH-bonded peak (a spectrum measured by a Fourier transform infrared spectrometer) in the vicinity of 3300 cm_1 were etched. By introducing the etching gas at a low pressure of 〇.5 Pa or less, the reaction species according to the etching gas is hard to be generated, and the damage of the photoresist can be reduced. Further, etching is performed while forming a polymer film, and etching with a high selectivity (etching rate of the interlayer insulating film / etching rate of the photoresist) can be performed while reducing the photoresist damage. The etching gas system is preferably an etching gas containing a CF-based gas, an N-containing gas, and a lower-grade hydrocarbon gas. By using such an etching gas, a polymer film having a CF-bonded peak, a CN-bonded peak, and a CH-bonded peak can be formed, and the damage of the photoresist can be reduced, and the etching can be performed without etching. Capacitance film. Further, the etching gas system is preferably a mixture of a CxFyHz gas and an etching gas containing N gas. Even if such an etching gas is used, a polymer film having a CF-bonded peak, a CN-bonded peak, and a CH-bonded peak can be formed, and the damage of the photoresist can be reduced, and the etching can be omitted. 200809961 The low permittivity film is etched at a standstill. The CF system gas system is preferably at least one selected from the group consisting of CF4, c3F C5F8, and CxFyI. The above lower hydrocarbon is preferably CH4, C2H6 or Cc2H2. Preferably, the CxFyHz gas system is a CHF3 gas. The N gas system is preferably at least one gas selected from the group consisting of nitrogen gas and NO dimethylamine. Further, the CxFyI gas system is composed of a C3F7I gas or the interlayer insulating film made of a material of S i Ο C ( (the effect of the invention). According to the present invention, the photoresist damage is reduced at a low pressure, and the result is Get excellent results that can be achieved. Further, by the polymer film, etching with a high selectivity can be obtained: [Embodiment] (Best Mode for Carrying Out the Invention) FIG. 1 is a view showing an interlayer insulating film of the present invention. Uranium engraving device 1. The 1 Series is capable of performing a low-temperature, high-density empty processing chamber 1 1 . The vacuum processing chamber 1 1 is provided with a vortex exhaust means 1 2 . 8, C2F6, C4F8, :3H8, C4H10, or x, NH3, methylamine, cf3i gas is preferred. It is better. Etching can reduce the damage of the photoresist by etching with less streaks. Dry etching method The etching of the plasma is true. Vacuum such as a wheel molecular pump -6- 200809961 The vacuum processing chamber 11 is composed of a lower substrate processing chamber 13 and an upper plasma generating chamber 14. The substrate placing portion 2 is provided at the center of the bottom in the substrate processing chamber 13. The substrate mounting portion 2 is composed of a substrate electrode 21 on which the processing substrate S is placed, an insulator 22, and a support base 23, and is provided between the substrate electrode 21 and the support table 23 via an insulator 22. Further, the substrate electrode 21 is connected to the first high-frequency power source 25 via the blocking capacitor 24, and becomes a potential floating electrode to reach a negative bias potential. The top plate 31 attached to the upper portion of the plasma generating chamber 14 opposed to the substrate placing portion 2 is fixed to the side wall of the plasma generating chamber 14 and is connected to the variable capacitor 32. On the second high-frequency power source, a potential drift state is reached to form a counter electrode. Further, a gas introduction path 41 for introducing an etching gas into the gas introduction means 4 in the vacuum processing chamber 11 is connected to the top plate 31. The gas introduction path 41 is connected to the gas source 43 via the gas flow rate control means 42. Further, in Fig. 1, although only one gas introduction path is shown, the number of gas sources 43 can be appropriately determined in accordance with the type of gas used for uranium engraving, and in this case, the number of gas sources 43 is matched. The gas introduction path 4 1 may be divided into two or more. The plasma generating chamber 14 has a cylindrical side wall, and a magnetic field coil 5 1 as a magnetic field generating means may be provided outside the side wall. In this case, the magnetic field coil 51 is used in the plasma generating chamber. A magnetic neutral line (not shown) is formed in 1 4 . Between the field coil 51 and the outside of the side wall of the plasma generating chamber 14, a high frequency antenna coil 52 for plasma generation is disposed. The high-frequency antenna coil 5 2 200809961 is a parallel antenna structure, and is connected to a power supply path bifurcation point 34 provided between the variable capacitor 32 and the second high-frequency power source 3 3 described above, and thus is configured to be A voltage is applied from the second high frequency power source 33. Further, in the case where the magnetic neutral line is formed by the magnetic field coil 51, the alternating electric field is increased along the formed magnetic neutral line, and the discharge plasma is generated on the magnetic neutral line. Further, in the present embodiment, the voltage is applied to the antenna coil 52 by the second high-frequency power source 33. However, the third high-frequency power source may be prepared without setting the branching path, and the third high-frequency power supply may be provided. The frequency power source and the antenna coil 5 2 are connected to each other to generate plasma. Further, a mechanism for applying the voltage to the antenna coil to a predetermined turn may be provided. Hereinafter, the dry etching method of the interlayer insulating film of the present invention will be described using the apparatus shown in Fig. 1. The interlayer insulating film formed on the substrate S in the present invention is a film composed of a material having a low capacitance (low-k material). For example, an SiOCH-based material such as HSQ or MSQ which is formed by spin coating or the like is applied. The material may be a porous material.

就上述SiOCH系材料而言，係可以使用例如商品名 LKD5109r5 (JSR公司製）、商品名HSG-7000 (日立化成 公司製）、商品名 HOSP (哈尼威爾電機材料公司， HONEYWELL ELECTRIC MATERIALS 製）、商品名 Nanoglass (哈尼威爾電機材料公司製）、商品名〇cd T-12(東足應化公司製）、商品名〇cdt_32(東京應化公 司製）、商品名IPS 2·4 (觸媒化成工業公司製）、商品 名IPS 2.2 (觸媒化成工業公司製）、商品名ALCAP-S 200809961 5100(旭化成公司製）、商品名ISM(uLVAC公司製） 等 在上述層間絕緣膜上塗敷光阻材料後，利用光微影法 形成既定的圖案。就該光阻材料而言，係可以使用既知的 KrF光阻材料（例如KrFM78Y: JSR股份有限公司製）、 或是既知的ArF光阻材料（例如UV-ΙΙ等）。又在使用 SiOCH系材料作用層間絕緣膜的情況下，在層間絕緣膜上 形成BARC (反射防止膜），再於其上塗敷光阻材料亦可 〇 如此一來，將形成膜的基板S載置於真空處理室11 內之基板電極2 1上’從蝕刻氣體導入手段4導入鈾刻氣 體，並由第2高頻電源33施加RF電力後，一邊在電漿產 生室1 4內產生電漿，一邊以無條痕且高選擇比蝕刻形成 在基板S上的層間絕緣膜。在該情況下，以能夠抑制自由 基反應之〇.5Pa以下，更佳的是0.1〜〇.5Pa的動作壓力下 ’將蝕刻氣體導入真空處理室1 1內。 使用於本發明之蝕刻方法的蝕刻氣體，係爲能夠無蝕 刻停頓地蝕刻層間絕緣膜，且在蝕刻中能夠於光阻上形成 既定的聚合物膜之氣體。 就這樣的蝕刻氣體而言，可以是混合CF系氣體、含 有N氣體、及低級碳化氫氣體的蝕刻氣體。該蝕刻氣體中 ’ CF系氣體係有助於層間絕緣膜之構成成分中的SiO之 蝕刻，含有N氣體係有助於CH之蝕刻，又低級碳化氫氣 體也是有助於CH之蝕刻。再者，此等的混合氣體係有助 -9- 200809961 於光阻的損傷抑制。 就CF系氣體而言，係舉例如選自CF4、C3F 、C4F8、及C5F8之至少一種氣體。又就CF系氣體 使用含碘之CxFyI氣體亦可，就CxFyI氣體而言， 如C3F7I或如CF3I。在該情況下，I係有助於除去 中過剩存在的氟原子。就前述之低級碳化氫而言， 鏈者爲佳，舉例如CH4、C2H6、C3H8、C4H1G、或 又就含有N氣體而言，係舉例如氮氣、NOx、NH: 、二甲胺等。 又就別的鈾刻氣體而言，可以爲混合CxFyHz 含有N氣體之鈾刻氣體。在該情況下之各氣體的作 上述混合3種的氣體之情況相同。就CxFyHz氣體 例如有CHF3。又就含有N氣體而言，舉例如氮氣、 NH3、甲胺、二甲胺等。 在上述之蝕刻氣體中，應該能夠減低光阻損傷 不添加作爲稀釋氣體之選自氦、氖、氬、氪、氙的 體。 當使用上述的蝕刻氣體，鈾刻低電容率之層間 時，藉由於光阻上形成既定的聚合物膜，可以抑制 傷並進行蝕刻。若是利用傅立葉變換紅外光譜儀測 定的聚合物膜之光譜，可以確認的是在1 200 cnT1 有C-F結合的峰値、在1 600CHT1附近具有C-N結 値、及在3 3 0 0 c m _1附近具有C - Η結合的峰値。又 譜的峰値係根據測定方法而稍微有變動。因此，該 8、C 2 F 6 而言， 係舉例 在氣相 係以直 C2H2。 >、甲胺 氣體與 用也與 而言， NOx、 ，因此 稀有氣 絕緣膜 光阻損 定該既 附近具 合的峰 此等光 既定的 -10- 200809961 聚合物膜，係爲使鈾刻氣體中的構成成分F、N、Η分別 與蝕刻氣體中的C結合之含有氮的CF系聚合物膜。又在 使用含碘的CF系氣體之情況下，則進一步形成含有碘之 CF系聚合物膜。 在一邊將前述之任一種蝕刻氣體導入真空處理室1 1 內，並於光阻上形成聚合物膜，一邊無蝕刻停頓地進行蝕 刻時，在上述之混合3種氣體的情況下，以蝕刻氣體總流 量基準導入CF系氣體係以20〜40 %程度爲佳，以20〜 3 0 %程度爲更佳。在上述之混合2種氣體的情況下，以蝕 刻氣體總流量基準導入CxFyHz氣體係以20〜40%程度爲 佳，以30〜40%程度爲更佳。 以下，利用實施例及比較例，更詳細地說明本發明。 (實施例1 ) 在本實施例中，針對藉由利用本發明之乾蝕刻方法所 使用之蝕刻氣體而形成的聚合物膜，利用FT-IR測定，調 查其光譜。 首先，在第1圖所示之裝置中，設定壓力爲3 mTorr 、天線電源爲2200W、偏壓電源爲〇W、Tc (基板設定溫 度）爲10°c，並導入由CF4氣體（流量60sccm) 、N2氣 體（流量9〇Sccm)、及CH4氣體（流量7〇SCCm)所構成 的蝕刻氣體，使聚合物膜層疊於Si基板上，並利用傅立 葉變換紅外光譜儀測定該聚合物膜之FT-IR光譜。 又爲了比較，利用FT-IR測定，測定除了使用由N2 -11 - 200809961 氣體（流量90sccm)、及CH4氣體（流量70sccm)所構 成的混合氣體之外，在其他條件都相同下所形成的聚合物 膜、及除了使用由C3F8氣體（流量25sccm )、及Ar氣體 (流量200 seem)所構成的混合氣體之外，在其他條件都 相同下所形成的聚合物膜之光譜。此等結果如第2圖所示 〇 由第2圖比較此等3個光譜時，藉由用於本發明之蝕 刻氣體的聚合物膜，係與N2/CH4混合氣體的情況相同， 具有C-N結合的峰値（在1600cm_1附近）、及C-H結合 的峰値（在3 3 00(:1^1附近），與C3F8/Ar混合氣體的情況 相同，具有C-F結合的峰値（在1 200CHT1附近）。藉此 ，可以得知的是根據利用本發明之蝕刻的蝕刻氣體而形成 的聚合物膜，係爲具有C-N結合、C-F結合、及C-H結合 者。 (實施例2) 在本實施例中，在由二氧化矽所構成的基板S上，利 用電漿CVD法形成SiOCH膜作爲層間絕緣膜，其後再利 用旋轉塗敷法形成有機膜作爲BARC。其次，塗敷膜厚 4 3 0nm的UV-II作爲ArF光阻，並利用光微影法形成既定 的圖案。再者，將形成此等膜的基板載置於第1圖所示之 蝕刻裝置1的基板電極21上，首先，應該先鈾刻B ARC， 因此使用由CF4氣體（流量25Sccm)、及CHF3氣體（流 量25 seem)所構成的BARC蝕刻用混合氣體，並將鈾刻裝 -12- 200809961 置1設定在天線側高頻電源：2200W、基板側高頻電源： 100W、基板設定溫度：10t、壓力lOmTorr的條件下，產 生電漿蝕刻BARC。其次，使用由CF4氣體（流量60sccm )、N2氣體（流量90sccm)、及CH4氣體（流量70sccm )所構成的鈾刻氣體，並將蝕刻裝置1設定在天線側高頻 電源：22 0 0W、基板側高頻電源：100W、基板設定溫度： l〇°C、壓力3mTorr的條件下，產生電漿進行層間絕緣膜 的鈾刻。將蝕刻後之基板的俯視SEM照片及以該SEM照 片中之虛線A所包圍的孔之剖面S EM照片分別顯示於第3 圖的（a )、及（b )。 由第3 ( a )圖，從上面看基板時，沒有表面（光阻） 粗縫（凸凹）。又由第3 ( b )圖所示之剖面S E Μ照片看 來，沒有發生蝕刻停頓，進一步，聚合物膜係形成在基板 上面部及孔的入口表面（斜線部Β )，藉此使層間絕緣膜 得以進行無條痕蝕刻。由此可知，若是根據本發明之蝕刻 方法的話，因爲沒有光阻損傷，因此不會發生孔內條痕。 (實施例3 ) 在本實施例中，變化蝕刻氣體的流量比，調查選擇比 (層間絕緣膜的蝕刻速率/光阻的蝕刻速率）。 與實施例2同樣，除了將天線側高頻電源設定爲 2 000W及變化蝕刻氣體的流量比之外，在其他條件都相同 的情況下進行蝕刻。蝕刻氣體係僅將CH4氣體設定在一定 値的7〇SCCm，CF4及Ν2的流量係分別設定爲： -13- 200809961 (1) CF4=20sccm、 N2=30sccm (2) CF4 = 32sccm、N2 = 4 8 seem (3) CF4=48sccm 、 N2=72sccm (4) CF4=60sccm 、 N2=90sccm (5) CF4=80sccm、 N2=120sccm ，以變化餽刻氣體的混合比。又（4 )的鈾刻氣體條件係 與實施例2相同。在各蝕刻氣體的條件中，測定層間絕緣 膜及光阻的蝕刻速率，求得選擇比。結果如第4圖所示。 又（1 ) 、 （ 2 ) 、 ( 3 ) 、 （ 5 )各情況中之基板的剖面 SEM照片分別如第5 ( a ) 、（ b ) 、（ c ) 、（ d )圖所示 ο 由第 4 圖看來，（1) CF4 = 20sccm、N2 = 30sccm (以餓 刻氣體之總流量基準分別爲1 6%、25% )的情況下，因爲 層間絕緣膜的蝕刻速率爲160nm/min，光阻的蝕刻速率爲 12nm/min ，選擇比約爲 13。 （ 2 ) CF4 = 32sccm 、 N 2= 4 8 s c c m (以餓刻氣體之總流量基準分別爲2 1 %、3 2 % )的情況下，因爲層間絕緣膜的触刻速率爲195nm/min， 光阻的蝕刻速率爲3nm/min，選擇比變大爲65。再者，（ 3) CF4 = 48sccm、N2 = 72sccm(以触刻氣體之總流量基準分 別爲25%、3 7% )的情況下，因爲在光阻上堆層聚合物膜 ，因此光阻的蝕刻速率爲〇，選擇比變成無限大。又，（5 )CF4 = 8 0sccm、N2 = l 20sccm (以蝕刻氣體之總流量基準分 別爲29%、44% )的情況下，因爲層間絕緣膜的飩刻速率 爲200nm/min，光阻的鈾刻速率爲18nm/min，選擇比約爲 -14- 200809961 11° 由此可知，可以藉由變化蝕刻氣體的混合比，進行選 擇比的最佳化，尤其是以蝕刻氣體總流量基準CF系氣體 爲2 1〜2 8 %之間的情況下，光阻的蝕刻速率變低，選擇比 爲佳。 由第5(a)〜（d)圖，在使用上述（1) 、 （2)、 (5 )條件的鈾刻氣體之情況下，由於產生光阻的表面粗 糙，而產生條痕。對此，在鈾刻氣體的流量爲最佳化之上 述（3 )的情況下，可以改善表面粗糙，而且沒有產生條 痕。由此可知，以蝕刻氣體總流量基準CF系氣體爲25〜 2 7%之間的情況下，由於也不會產生光阻的表面粗糙，因 此不會產生條痕。 將Ar氣體添加於鈾刻氣體中作爲比較例以進行蝕刻 。使用與實施例2形成相同的膜之基板，利用以下的條件 供給鈾刻氣體，並將蝕刻裝置1設定在天線側高頻電源： 2750W >基板側高頻電源：4 5 0 W、基板設定溫度：1 〇 °C 、壓力0.26Pa，進行蝕刻。 (a) C3F8/Ar/N2/CH4= 1 6/50/20/26 (b ) C3F8/Ar/N2/CH4 = 3 0/50/20/26 (c ) C3F8/Ar/N2/CH4= 1 6/1 00/20/26 (d) C3F8/Ar/N2/CH4= 1 6/50/20/40 (e ) C3F8/Ar/N2/CH4= 1 6/5 0/5 0/26 各條件中之基板的剖面S E M照片係如第6圖所示。又測 定各條件中之層間絕緣膜及光阻的蝕刻速率，由該結果求 -15- 200809961 得各條件中之選擇比。結果如第7圖所示。 由第6(a)〜（e)圖，在各情況下，光阻表面爲不 平坦而形成凹凸的結果，因此於孔的側面產生條痕，又由 於也發生了蝕刻停頓，因此沒有實用性。又在使用上述（ a )〜（e )作爲蝕刻氣體的各情況下，因爲在光阻表面受 到損傷後進行飩刻，因此如第7圖所示，選擇比爲低而不 具實用性。 (產業上的可利用性） 若是根據本發明的話，因爲即使是耐電漿性低的光阻 材料，也可以減低損傷進行鈾刻，尤其是可以有效地適用 在有以ArF光阻材料作爲光阻之由Low_k材料所構成的層 間絕緣膜之乾蝕刻。因此，本發明係可以利用於半導體製 造裝置領域。 【圖式簡單說明】 第1圖係爲顯示實施本發明之乾鈾刻方法的飩刻裝置 構成之一例的槪略構成圖。 第2圖係爲顯示利用本發明之乾蝕刻方法所得到的膜 之根據FT-IR測定的光譜圖。 第3圖係爲顯示利用本發明之乾蝕刻方法所得到的基 板之狀態SEM照片，（a)爲基板的俯視圖，（b)爲其 剖面圖。 第4圖係爲顯示在變化鈾刻氣體之混合比的情況下之 -16- 200809961 蝕刻速率（nm/min)與選擇比的圖面。 第5圖（a )〜（d )係分別爲在變化蝕刻氣體之混合 比的情況下之基板的剖面SEM照片。 第6圖（a )〜（e )係分別爲利用習知的蝕刻方法所 蝕刻之基板的剖面SEM照片。 第7圖係爲顯示利用習知的鈾刻方法所鈾刻的各基板 之蝕刻速率（nm/min )與選擇比的圖面。 【主要元件符號說明】 1 :蝕刻裝置 2 :基板載置部 4 :氣體導入手段 1 1 :真空處理室 1 2 :真空排氣手段 1 3 :基板處理室 1 4 :電漿產生室 2 1 :基板電極 2 2 :絕緣體 23 :支撐台 2 4 :阻塞電容器 25 :高頻電源 3 1 :天板 32 :可變電容器 3 3 :高頻電源 -17- 200809961 3 4 :分叉點 4 1 :氣體導入路徑 42 :氣體流量控制手段 4 3 :氣體源 5 1 :磁場線圈 5 2 :天線線圏 S :基板 -18-For the SiOCH-based material, for example, trade name LKD5109r5 (manufactured by JSR Corporation), trade name HSG-7000 (manufactured by Hitachi Chemical Co., Ltd.), trade name HOSP (Haniwi Electric Materials Co., Ltd., manufactured by HONEYWELL ELECTRIC MATERIALS), The product name is Nanoglass (manufactured by Haniwei Electric Materials Co., Ltd.), the product name is cd T-12 (manufactured by Tosho Co., Ltd.), the product name is cdt_32 (manufactured by Tokyo Toka Chemical Co., Ltd.), and the product name is IPS 2·4 (catalyst). Chemicals Co., Ltd.), trade name IPS 2.2 (manufactured by Catalyst Chemical Industries, Ltd.), trade name ALCAP-S 200809961 5100 (manufactured by Asahi Kasei Corporation), trade name ISM (manufactured by uLVAC Co., Ltd.), etc., coating photoresist on the above interlayer insulating film After the material, a predetermined pattern is formed by photolithography. As the photoresist material, a known KrF photoresist material (for example, KrFM78Y: manufactured by JSR Co., Ltd.) or a known ArF photoresist material (for example, UV-ruthenium or the like) can be used. Further, when an interlayer insulating film is applied by using a SiOCH-based material, a BARC (reflection preventing film) is formed on the interlayer insulating film, and a photoresist material is applied thereon, so that the substrate S on which the film is formed is placed. The uranium engraved gas is introduced from the etching gas introduction means 4 on the substrate electrode 2 1 in the vacuum processing chamber 11, and the RF power is applied from the second high-frequency power source 33, and plasma is generated in the plasma generation chamber 14. The interlayer insulating film formed on the substrate S is etched with no streaks and high selectivity. In this case, the etching gas is introduced into the vacuum processing chamber 1 1 at an operating pressure of 0.1 to 5 Pa or less, more preferably 0.1 to 0.5 Pa, which can suppress the radical reaction. The etching gas used in the etching method of the present invention is a gas which can etch the interlayer insulating film without being etched and which can form a predetermined polymer film on the photoresist during etching. Such an etching gas may be an etching gas containing a CF-based gas, an N-containing gas, and a lower-grade hydrocarbon gas. The 'CF system gas system in the etching gas contributes to the etching of SiO in the constituent elements of the interlayer insulating film, and the N gas system contributes to the etching of CH, and the lower carbonized hydrogen gas also contributes to the etching of CH. Furthermore, such a mixture system contributes to the suppression of damage of the photoresist from -9 to 200809961. The CF-based gas is, for example, at least one selected from the group consisting of CF4, C3F, C4F8, and C5F8. Further, for the CF-based gas, an iodine-containing CxFyI gas may be used, and in the case of a CxFyI gas, such as C3F7I or such as CF3I. In this case, the I system contributes to the removal of fluorine atoms which are excessively present. In the case of the above-mentioned lower-stage hydrocarbon, the chain is preferably, for example, CH4, C2H6, C3H8, C4H1G, or N gas, for example, nitrogen, NOx, NH:, dimethylamine or the like. For other uranium engraving gases, it is possible to mix CxFyHz uranium engraved gas containing N gas. In the case where the gases of the above three gases are mixed as described above, the same is true. For the CxFyHz gas, for example, there is CHF3. Further, in the case of containing N gas, for example, nitrogen gas, NH3, methylamine, dimethylamine or the like can be mentioned. In the etching gas described above, it is possible to reduce the photoresist damage without adding a body selected from the group consisting of ruthenium, osmium, argon, krypton and xenon as a diluent gas. When the etching gas described above is used and the uranium is engraved between the layers of low permittivity, the formation of a predetermined polymer film by the photoresist can suppress the damage and perform etching. If the spectrum of the polymer film measured by Fourier transform infrared spectrometer is used, it can be confirmed that there is a CF-bonded peak at 1 200 cnT1, a CN knot near 1 600 CHT1, and C- at around 3 3 0 0 +1. Η combined peaks. The peaks of the spectrum are slightly changed depending on the measurement method. Therefore, in the case of the C 2 F 6 , it is exemplified by a straight C 2 H 2 in the gas phase. >, methylamine gas and use, also, NOx, and therefore rare gas insulating film photoresist damage to the vicinity of the peak of the combination of this light is established -10- 200809961 polymer film, for uranium engraved gas A CF-based polymer film containing nitrogen in which the constituent components F, N, and Η are combined with C in the etching gas. Further, when a CF-based gas containing iodine is used, a CF-based polymer film containing iodine is further formed. When one of the above-described etching gases is introduced into the vacuum processing chamber 1 1 and a polymer film is formed on the photoresist, and etching is performed without etching, when the three kinds of gases are mixed as described above, the etching gas is used. The total flow rate is preferably introduced into the CF system at a level of 20 to 40%, more preferably 20 to 30%. In the case of mixing the above two kinds of gases, it is preferable to introduce the CxFyHz gas system to the CxFyHz gas system on the basis of the total flow rate of the etching gas, preferably from 30 to 40%. Hereinafter, the present invention will be described in more detail by way of examples and comparative examples. (Example 1) In this example, a polymer film formed by using the etching gas used in the dry etching method of the present invention was examined for its spectrum by FT-IR measurement. First, in the device shown in Fig. 1, the set pressure is 3 mTorr, the antenna power supply is 2200 W, the bias power supply is 〇W, Tc (substrate set temperature) is 10 °c, and CF4 gas (flow rate 60 sccm) is introduced. An etching gas composed of N2 gas (flow rate: 9 〇 Sccm) and CH4 gas (flow rate: 7 〇 SCCm) was laminated on a Si substrate, and the FT-IR of the polymer film was measured by Fourier transform infrared spectroscopy. spectrum. Further, for comparison, an polymerization formed by using the FT-IR measurement and using the mixed gas composed of N 2 -11 - 200809961 gas (flow rate 90 sccm) and CH 4 gas (flow rate 70 sccm) was used under the same conditions. The material film and the spectrum of the polymer film formed under the same conditions except for the mixed gas composed of C3F8 gas (flow rate: 25 sccm) and Ar gas (flow rate: 200 seem). These results are shown in Fig. 2. When comparing these three spectra from Fig. 2, the polymer film used for the etching gas of the present invention is the same as the case of the N2/CH4 mixed gas, and has CN bonding. The peak of the peak (near 1600 cm_1) and the peak of the CH bond (near 3 3 00 (:1^1), the same as the case of the C3F8/Ar mixed gas, with a peak of CF binding (near 1 200 CHT1) Accordingly, it is known that the polymer film formed by the etching gas using the etching of the present invention has CN bonding, CF bonding, and CH bonding. (Example 2) In the present embodiment, On the substrate S made of cerium oxide, an SiOCH film was formed as an interlayer insulating film by a plasma CVD method, and then an organic film was formed as a BARC by a spin coating method. Secondly, a UV film having a film thickness of 430 nm was applied. -II is used as an ArF photoresist, and a predetermined pattern is formed by photolithography. Further, the substrate on which the films are formed is placed on the substrate electrode 21 of the etching apparatus 1 shown in Fig. 1, firstly, Uranium engraved B ARC, therefore using CF4 gas (flow rate 25Sccm), and CHF3 gas (Flow 25 seem) BAOC etching mixed gas, and uranium engraving -12- 200809961 set to 1 antenna high frequency power supply: 2200W, substrate side high frequency power supply: 100W, substrate set temperature: 10t, pressure Plasma etching etched BARC under the condition of 1OmTorr. Secondly, an uranium engraving gas composed of CF4 gas (flow rate 60 sccm), N2 gas (flow rate 90 sccm), and CH4 gas (flow rate 70 sccm) was used, and the etching apparatus 1 was set at Antenna side high frequency power supply: 22 0 0W, substrate side high frequency power supply: 100 W, substrate set temperature: l 〇 ° C, pressure 3 mTorr, plasma is generated for uranium engraving of the interlayer insulating film. The cross-sectional S EM photograph of the SEM photograph and the hole surrounded by the broken line A in the SEM photograph are respectively shown in (a) and (b) of Fig. 3. From the third (a) diagram, when the substrate is viewed from above There is no surface (photoresist) rough joint (convex). From the photograph of the section SE Μ shown in Fig. 3 (b), no etching pause occurs. Further, the polymer film is formed on the surface of the substrate and the hole. Entrance surface (slashed line Β), thereby The interlayer insulating film can be subjected to streak-free etching, and it is understood that, in the etching method according to the present invention, since there is no photoresist damage, streaks in the holes do not occur. (Embodiment 3) In the present embodiment, variation The flow rate ratio of the etching gas was investigated, and the selection ratio (etching rate of the interlayer insulating film/etching rate of the photoresist) was investigated. In the same manner as in the second embodiment, except that the antenna side high-frequency power source was set to 2 000 W and the flow rate ratio of the etching gas was changed. Etching is performed under the same conditions. The etching gas system only sets the CH4 gas to 7〇SCCm of a certain enthalpy, and the flow rates of CF4 and Ν2 are respectively set to: -13- 200809961 (1) CF4=20sccm, N2=30sccm (2) CF4 = 32sccm, N2 = 4 8 seem (3) CF4=48sccm, N2=72sccm (4) CF4=60sccm, N2=90sccm (5) CF4=80sccm, N2=120sccm, to change the mixing ratio of the feed gas. Further, the uranium engraving gas condition of (4) is the same as that of the second embodiment. The etching rate of the interlayer insulating film and the photoresist was measured under the conditions of each etching gas to determine the selection ratio. The result is shown in Figure 4. Further, the SEM photographs of the cross-sections of the substrates in each of (1), (2), (3), and (5) are as shown in the fifth (a), (b), (c), and (d), respectively. 4 In the figure, (1) CF4 = 20sccm, N2 = 30sccm (1 6%, 25% based on the total flow rate of the hungry gas, respectively), because the etching rate of the interlayer insulating film is 160 nm/min, light The etching rate of the resistor was 12 nm/min, and the selection ratio was about 13. (2) CF4 = 32sccm, N 2 = 4 8 sccm (2 1 %, 32 %, respectively, based on the total flow rate of the gas of the hungry gas), because the etching rate of the interlayer insulating film is 195 nm/min, light The etching rate of the resist was 3 nm/min, and the selection ratio was increased to 65. Furthermore, (3) CF4 = 48sccm, N2 = 72sccm (25%, 37%, respectively, based on the total flow rate of the etched gas), since the polymer film is stacked on the photoresist, the photoresist is The etch rate is 〇 and the selection ratio becomes infinite. Further, in the case where (5) CF4 = 8 0 sccm and N2 = 18 sccm (29%, 44%, respectively, based on the total flow rate of the etching gas), since the etching rate of the interlayer insulating film is 200 nm/min, the photoresist is The uranium engraving rate is 18 nm/min, and the selection ratio is about -14 - 200809961 11 °. It can be seen that the selection ratio can be optimized by changing the mixing ratio of the etching gas, especially the CF system based on the total flow rate of the etching gas. In the case where the gas is between 2 1 and 2 8 %, the etching rate of the photoresist becomes low, and the selection ratio is preferably. From the fifth (a) to (d), in the case of using the uranium engraving gas of the above conditions (1), (2), and (5), streaks are generated because the surface on which the photoresist is generated is rough. In this case, in the case where the flow rate of the uranium engraving gas is optimized (3), the surface roughness can be improved without streaking. From this, it is understood that when the CF system gas is between 25 and 2 7% based on the total flow rate of the etching gas, since the surface roughness of the photoresist is not generated, streaks are not generated. Ar gas was added to the uranium engraving gas as a comparative example to perform etching. Using the substrate having the same film as that of Example 2, the uranium engraving gas was supplied under the following conditions, and the etching apparatus 1 was set to the antenna side high frequency power supply: 2750 W > Substrate side high frequency power supply: 4500 W, substrate setting Temperature: 1 〇 ° C, pressure 0.26 Pa, etching. (a) C3F8/Ar/N2/CH4= 1 6/50/20/26 (b) C3F8/Ar/N2/CH4 = 3 0/50/20/26 (c) C3F8/Ar/N2/CH4= 1 6/1 00/20/26 (d) C3F8/Ar/N2/CH4= 1 6/50/20/40 (e) C3F8/Ar/N2/CH4= 1 6/5 0/5 0/26 Conditions The SEM photograph of the cross section of the substrate is shown in Fig. 6. The etching rate of the interlayer insulating film and the photoresist in each condition was also measured, and the result was selected from the results of -15-200809961. The result is shown in Figure 7. From the sixth (a) to (e) diagrams, in each case, the surface of the photoresist is uneven and the unevenness is formed. Therefore, streaks are formed on the side surface of the hole, and since the etching pause occurs, there is no practicality. . Further, in the case where the above (a) to (e) are used as the etching gas, since the etching is performed after the photoresist surface is damaged, as shown in Fig. 7, the selection ratio is low and practical. (Industrial Applicability) According to the present invention, even if it is a photoresist material having low plasma resistance, uranium engraving can be performed with reduced damage, and in particular, it can be effectively applied to an ArF photoresist material as a photoresist. Dry etching of an interlayer insulating film composed of a Low_k material. Therefore, the present invention can be utilized in the field of semiconductor manufacturing equipment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing an example of a configuration of an etching apparatus for carrying out the dry uranium engraving method of the present invention. Fig. 2 is a spectrum chart showing the FT-IR measurement of the film obtained by the dry etching method of the present invention. Fig. 3 is a SEM photograph showing the state of the substrate obtained by the dry etching method of the present invention, wherein (a) is a plan view of the substrate, and (b) is a cross-sectional view thereof. Fig. 4 is a graph showing the etching rate (nm/min) and the selection ratio in the case of changing the mixing ratio of the uranium engraving gas. Fig. 5 (a) to (d) are SEM photographs of the cross section of the substrate in the case where the mixing ratio of the etching gas is changed. Fig. 6 (a) to (e) are cross-sectional SEM photographs of the substrate etched by a conventional etching method. Fig. 7 is a view showing the etching rate (nm/min) and the selection ratio of each substrate engraved by the uranium engraving method by a conventional uranium engraving method. [Description of main component symbols] 1 : etching apparatus 2 : substrate mounting part 4 : gas introduction means 1 1 : vacuum processing chamber 1 2 : vacuum evacuation means 1 3 : substrate processing chamber 1 4 : plasma generation chamber 2 1 : Substrate electrode 2 2 : Insulator 23 : Support table 2 4 : Blocking capacitor 25 : High frequency power supply 3 1 : Sky plate 32 : Variable capacitor 3 3 : High frequency power supply -17- 200809961 3 4 : Bifurcation point 4 1 : Gas Introduction path 42: gas flow control means 4 3 : gas source 5 1 : magnetic field coil 5 2 : antenna line 圏 S : substrate -18-

Claims (1)

200809961 十' 申請專利範圍 1 · 一種層間絕緣膜之乾鈾刻方法，其係爲利用蝕刻 氣體，一邊在設置於層間絕緣膜上的ArF光阻或KrF光阻 上形成聚合物膜，一邊細微加工層間絕緣膜之層間絕緣膜 的乾蝕刻方法，其特徵爲：一邊在0.5 P a以下的壓力下導 入前述蝕刻氣體，形成在IZOOcnr1附近具有C-F結合的 峰値、在1 600CHT1附近具有 C-N結合的峰値、及在 3 3 00CHT1附近具有C-H結合的峰値（利用傅立葉變換紅外 光譜儀所測定之光譜）之聚合物膜，一邊進行鈾刻。 2. 如申請專利範圍第1項之層間絕緣膜之乾蝕刻方 法，其中，前述鈾刻氣體係爲由CF系氣體、含有N氣體 、及低級碳化氫氣體所構成之鈾刻氣體。 3. 如申請專利範圍第1項之層間絕緣膜之乾蝕刻方 法，其中，前述鈾刻氣體係爲由CxFyHz氣體、含有N氣 體所構成之蝕刻氣體。 4. 如申請專利範圍第2項之層間絕緣膜之乾蝕刻方 法，其中，前述CF系氣體係選自CF4、C3F8、C2F6、C4F8 、<^48及CxFyI之至少一種氣體。 5. 如申請專利範圍第2項至第4項中任一項之層間 絕緣膜之乾鈾刻方法，其中’前述低級碳化氫係爲CH4、 C2H6、C3H8、C4H1()、或 c2h2。 6 ·如申請專利範圍第3項之層間絕緣膜之乾蝕刻方 法，其中，前述CxFyHz氣體係爲CHF3氣體。 7.如申請專利範圍第2項或第3項之層間絕緣膜之 -19- 200809961 乾餓刻方法’其中，前述含有N氣體係選自氮氣、N Ox、 ΝΗ3、甲胺、二甲胺之至少一種氣體。 8 ·如申請專利範圍第4項之層間絕緣膜之乾鈾刻方 法’其中，前述CxFyI氣體係爲C3F7I氣體、或是CF3I氣 體。 9 ·如申請專利範圍第1項至第8項中任一項之層間 ，絕緣膜之乾蝕刻方法，其中，前述層間絕緣膜係由SiOCH $材料所構成。 -20-200809961 十' Patent Application No. 1 · A dry uranium engraving method for interlayer insulating film, which uses a etching gas to form a polymer film on an ArF photoresist or a KrF photoresist provided on an interlayer insulating film while finely processing A method of dry etching an interlayer insulating film of an interlayer insulating film, wherein the etching gas is introduced under a pressure of 0.5 P a or less to form a peak having a CF bond in the vicinity of IZOOcnr1 and a peak having a CN bond in the vicinity of 1 600 CHT1. Niobium and a polymer film having a CH-bonded peak (a spectrum measured by a Fourier transform infrared spectrometer) in the vicinity of 3 3 00 CHT1 were subjected to uranium engraving. 2. The dry etching method of the interlayer insulating film according to the first aspect of the invention, wherein the uranium entrainment system is an uranium engraving gas composed of a CF-based gas, an N-containing gas, and a low-grade hydrocarbon gas. 3. The dry etching method of the interlayer insulating film according to the first aspect of the invention, wherein the uranium entrainment system is an etching gas composed of a CxFyHz gas and an N gas. 4. The dry etching method of the interlayer insulating film of claim 2, wherein the CF system gas system is at least one selected from the group consisting of CF4, C3F8, C2F6, C4F8, <^48 and CxFyI. 5. The method of dry uranium engraving of an interlayer insulating film according to any one of claims 2 to 4, wherein the aforementioned lower hydrocarbon is CH4, C2H6, C3H8, C4H1(), or c2h2. 6. The dry etching method of the interlayer insulating film of claim 3, wherein the CxFyHz gas system is CHF3 gas. 7. For example, the interlayer insulating film of the second or third aspect of the patent application is -19-200809961. The above-mentioned N-containing gas system is selected from the group consisting of nitrogen, N Ox, hydrazine 3, methylamine and dimethylamine. At least one gas. 8. The dry uranium engraving method of the interlayer insulating film of claim 4, wherein the CxFyI gas system is a C3F7I gas or a CF3I gas. 9. The method of dry etching an insulating film between layers of any one of claims 1 to 8, wherein the interlayer insulating film is composed of SiOCH $ material. -20-
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