JPWO2006129342A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JPWO2006129342A1 JPWO2006129342A1 JP2007518816A JP2007518816A JPWO2006129342A1 JP WO2006129342 A1 JPWO2006129342 A1 JP WO2006129342A1 JP 2007518816 A JP2007518816 A JP 2007518816A JP 2007518816 A JP2007518816 A JP 2007518816A JP WO2006129342 A1 JPWO2006129342 A1 JP WO2006129342A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000002093 peripheral effect Effects 0.000 claims abstract description 49
- 239000011229 interlayer Substances 0.000 claims description 50
- 238000009792 diffusion process Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 12
- 230000015654 memory Effects 0.000 abstract description 42
- 239000010410 layer Substances 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- -1 Metal Oxide Nitride Chemical class 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (16)
- 半導体基板に埋め込まれたビットラインと、
該ビットライン上に設けられ、前記ビットラインと接続する第1の配線と、
該第1の配線上に設けられ、前記第1の配線と前記周辺回路領域のトランジスタとを接続する第2の配線と、を具備し、
前記第1の配線は、前記第2の配線を通じてのみ前記トランジスタと接続する半導体装置。 - 前記第1の配線は、コア領域または前記コア領域および前記周辺回路領域の間の領域にのみ延在する請求項1記載の半導体装置。
- 前記第2の配線と前記トランジスタに接続する第3の配線を具備し、
前記第2の配線は、前記第3の配線を通じてのみ前記トランジスタと接続する請求項1または2記載の半導体装置。 - 前記ビットライン上に、前記ビットラインと前記第1の配線を接続するコンタクトホールを有するONO膜を具備する請求項1から3記載の半導体装置。
- 半導体基板に埋め込まれたビットラインと、
該ビットライン上に設けられた層間絶縁膜と、
該層間絶縁膜上に設けられ、前記ビットラインと前記層間絶縁膜に形成されたコンタクトホールを介し接続された第1の配線と、を具備し、
前記層間絶縁膜は、前記第1の配線と前記半導体基板とに接続するダミーコンタクトホールを有し、ダミーコンタクトホールは第1の配線の前記トランジスタと前記ビットラインの間の部分に接続する半導体装置。 - 前記ダミーコンタクトホールは、コア領域または前記コア領域および前記周辺回路領域の間の領域に形成された請求項5記載の半導体装置。
- 前記ダミーコンタクトホールは、前記半導体基板に埋め込まれたダミー拡散領域に接続する請求項6記載の半導体装置。
- 前記ビットラインと前記層間絶縁膜の間にONO膜を具備し、
前記ONO膜に前記コンタクトホールが形成されている請求項5から7のいずれか一項記載の半導体装置。 - 前記周辺回路領域は、セレクト・セル・エリアである請求項1から8のいずれか一項記載の半導体装置。
- 半導体基板に埋め込まれたビットラインを形成する工程と、
該ビットライン上に、前記ビットラインと接続する第1の配線を形成する工程と、
該第1の配線上に設けられ、前記第1の配線と周辺回路領域のトランジスタとを接続する第2の配線を形成する工程と、を具備し、
前記第1の配線は前記第2の配線を介してのみ前記トランジスタと接続する半導体装置の製造方法。 - 前記第1の配線を形成する工程は、前記トランジスタと接続し前記第2の配線が接続すべき第3の配線を形成する工程を備える請求項10記載の半導体装置の製造方法。
- 前記半導体基板上にONO膜を形成する工程を具備し、
前記第1の配線は、前記ONO膜に形成されたコンタクトホールを介し、前記ビットラインに接続された請求項10または11記載の半導体装置の製造方法。 - 半導体基板に埋め込まれたビットラインを形成する工程と、
該ビットライン上に層間絶縁膜を形成する工程と、
該層間絶縁膜に、前記ビットラインと接続するコンタクトホールを形成する工程と、
前記層間絶縁膜上に、周辺回路領域のトランジスタおよびビットラインと接続する第1の配線を形成する工程と、を具備し
前記コンタクトホールを形成する工程は、前記半導体基板と接続し、前記トランジスタと前記ビットライン間の前記第1の配線に接続するためのダミーコンタクトホールを形成する工程を含む半導体装置の製造方法。 - 前記ビットラインを形成する工程は、前記ダミーコンタクトホールに接続するための前記半導体基板に埋め込まれたダミー拡散領域を形成する工程を含む請求項13記載の半導体装置の製造方法。
- 前記半導体基板上にONO膜を形成する工程を具備し、
前記コンタクトホールを形成する工程は、前記ONO膜にコンタクトホールを形成する工程を含む請求項13または14記載の半導体装置の製造方法。 - 前記周辺回路領域は、セレクト・セル・エリアである請求項11から15のいずれか一項記載の半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/009879 WO2006129342A1 (ja) | 2005-05-30 | 2005-05-30 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2006129342A1 true JPWO2006129342A1 (ja) | 2008-12-25 |
JP5330687B2 JP5330687B2 (ja) | 2013-10-30 |
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JP2007518816A Expired - Fee Related JP5330687B2 (ja) | 2005-05-30 | 2005-05-30 | 半導体装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060278918A1 (ja) |
JP (1) | JP5330687B2 (ja) |
KR (1) | KR101008371B1 (ja) |
TW (1) | TW200707642A (ja) |
WO (1) | WO2006129342A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US7951704B2 (en) * | 2008-05-06 | 2011-05-31 | Spansion Llc | Memory device peripheral interconnects and method of manufacturing |
US8669597B2 (en) | 2008-05-06 | 2014-03-11 | Spansion Llc | Memory device interconnects and method of manufacturing |
KR101528823B1 (ko) * | 2009-01-19 | 2015-06-15 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
KR102376504B1 (ko) | 2015-07-02 | 2022-03-18 | 삼성전자주식회사 | 반도체 소자 |
KR20180006817A (ko) | 2016-07-11 | 2018-01-19 | 삼성전자주식회사 | 수직형 메모리 장치 |
KR102451725B1 (ko) * | 2017-12-20 | 2022-10-07 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN112310105B (zh) * | 2020-10-30 | 2022-05-13 | 长江存储科技有限责任公司 | 半导体器件的制作方法及半导体器件 |
Family Cites Families (14)
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US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
JP3221369B2 (ja) * | 1997-09-19 | 2001-10-22 | 日本電気株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
KR100267108B1 (ko) | 1998-09-16 | 2000-10-02 | 윤종용 | 다층배선을구비한반도체소자및그제조방법 |
JP2000124311A (ja) * | 1998-10-20 | 2000-04-28 | Kawasaki Steel Corp | 半導体装置および半導体装置のレイアウト方法 |
KR100332105B1 (ko) | 1999-06-23 | 2002-04-10 | 박종섭 | 플래쉬 메모리 소자 및 그 프로그램 방법 |
JP3228272B2 (ja) * | 1999-07-14 | 2001-11-12 | 日本電気株式会社 | 半導体装置のレイアウト設計方法及び装置並びに記録媒体 |
KR100363841B1 (ko) * | 1999-12-28 | 2002-12-06 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자 |
JP4068781B2 (ja) * | 2000-02-28 | 2008-03-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置および半導体集積回路装置の製造方法 |
JP2001267437A (ja) * | 2000-03-22 | 2001-09-28 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP4051175B2 (ja) * | 2000-11-17 | 2008-02-20 | スパンション エルエルシー | 不揮発性半導体メモリ装置および製造方法 |
JP2003115490A (ja) * | 2001-10-03 | 2003-04-18 | Seiko Epson Corp | 半導体装置及びその設計方法 |
JP4090766B2 (ja) * | 2002-03-19 | 2008-05-28 | 富士通株式会社 | 半導体装置の製造方法 |
JP2004193178A (ja) * | 2002-12-06 | 2004-07-08 | Fasl Japan 株式会社 | 半導体記憶装置及びその製造方法 |
JP2005109236A (ja) * | 2003-09-30 | 2005-04-21 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
-
2005
- 2005-05-30 JP JP2007518816A patent/JP5330687B2/ja not_active Expired - Fee Related
- 2005-05-30 WO PCT/JP2005/009879 patent/WO2006129342A1/ja active Application Filing
- 2005-05-30 KR KR1020077028145A patent/KR101008371B1/ko not_active IP Right Cessation
-
2006
- 2006-05-26 US US11/441,771 patent/US20060278918A1/en not_active Abandoned
- 2006-05-29 TW TW095118976A patent/TW200707642A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP5330687B2 (ja) | 2013-10-30 |
TW200707642A (en) | 2007-02-16 |
KR20080009310A (ko) | 2008-01-28 |
WO2006129342A1 (ja) | 2006-12-07 |
KR101008371B1 (ko) | 2011-01-19 |
US20060278918A1 (en) | 2006-12-14 |
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