JP4965445B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4965445B2 JP4965445B2 JP2007526779A JP2007526779A JP4965445B2 JP 4965445 B2 JP4965445 B2 JP 4965445B2 JP 2007526779 A JP2007526779 A JP 2007526779A JP 2007526779 A JP2007526779 A JP 2007526779A JP 4965445 B2 JP4965445 B2 JP 4965445B2
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- 239000004065 semiconductor Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 18
- 239000010410 layer Substances 0.000 description 192
- 230000015654 memory Effects 0.000 description 44
- 238000009826 distribution Methods 0.000 description 36
- 239000011229 interlayer Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- -1 Metal Oxide Nitride Chemical class 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Description
80nmとする。
Claims (10)
- 半導体基板中に設けられたビットラインと、
前記半導体基板上に設けられたONO膜と、
前記ONO膜上に設けられ、前記ビットラインの幅方向に延在するワードラインと、
前記ビットラインの幅方向に延在し、前記ビットラインと配線層を接続するコンタクトホールが形成されたビットラインコンタクト領域内に設けられたダミー層と、を具備し、
前記ダミー層は、前記ワードラインの長手方向に連続的に形成され、前記コンタクトホールを含む開口部を有する半導体装置。 - 前記ダミー層の膜厚は前記ワードラインの膜厚と実質的に同じである請求項1記載の半導体装置。
- 前記ダミー層と隣接するワードラインとの距離は、前記ワードライン間の距離と実質的に同じである請求項1記載の半導体装置。
- 前記ダミー層は、前記ビットラインの間の半導体基板上に形成された請求項1から3のいずれか一項記載の半導体装置。
- 前記ワードラインおよび前記ダミー層の両側に側壁層を有する請求項1から4のいずれか一項記載の半導体装置。
- 前記側壁層は前記ビットラインと重なる請求項5記載の半導体装置。
- 半導体基板内にビットラインを形成する工程と、
前記半導体基板上にONO膜を形成する工程と、
前記ONO膜上に、前記ビットラインの幅方向に延在するワードラインを形成する工程と、
前記ビットラインの長手方向に延在し、前記ビットラインと配線層を接続するコンタクトホールが形成されるべきビットラインコンタクト領域内の前記ONO膜上にダミー層を形成する工程と、を有し、
前記ダミー層は、前記ワードラインの長手方向に連続的に形成され、前記コンタクトホールを含む開口部を有する、半導体装置の製造方法。 - 前記ダミー層を形成する工程は前記ワードラインを形成する工程を含む請求項7記載の半導体装置の製造方法。
- 前記ダミー層を形成する工程は、前記ワードラインを形成する工程と同時に前記ビットラインコンタクト領域内に、前記ワードラインの長手方向に延在するダミー層になるべき層を形成する工程と、前記ビットライン上の前記ダミー層をなるべき層を除去する工程と、を含む請求項8記載の半導体装置の製造方法。
- 前記ワードラインおよび前記ダミー層の両側に側壁層を形成する工程を有する請求項8または9記載の半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/013763 WO2007013155A1 (ja) | 2005-07-27 | 2005-07-27 | 半導体装置およびその製造方法 |
Publications (2)
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JPWO2007013155A1 JPWO2007013155A1 (ja) | 2009-02-05 |
JP4965445B2 true JP4965445B2 (ja) | 2012-07-04 |
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JP2007526779A Active JP4965445B2 (ja) | 2005-07-27 | 2005-07-27 | 半導体装置およびその製造方法 |
Country Status (3)
Country | Link |
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US (2) | US8183622B2 (ja) |
JP (1) | JP4965445B2 (ja) |
WO (1) | WO2007013155A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008166437A (ja) * | 2006-12-27 | 2008-07-17 | Spansion Llc | 半導体装置、その制御方法およびその製造方法 |
JP5486152B2 (ja) * | 2007-07-30 | 2014-05-07 | スパンション エルエルシー | 半導体装置およびその製造方法 |
JP5395344B2 (ja) * | 2007-09-28 | 2014-01-22 | スパンション エルエルシー | 半導体装置 |
JP2012015540A (ja) * | 2011-09-01 | 2012-01-19 | Spansion Llc | 半導体装置 |
JP5792759B2 (ja) * | 2013-03-08 | 2015-10-14 | スパンション エルエルシー | スイッチ素子を有するメモリシステム |
JP5755314B2 (ja) * | 2013-11-13 | 2015-07-29 | スパンション エルエルシー | 半導体装置及び半導体装置の製造方法 |
US9660076B2 (en) | 2015-09-03 | 2017-05-23 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing the same |
US9935143B2 (en) * | 2015-09-30 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01107556A (ja) * | 1987-10-20 | 1989-04-25 | Hitachi Ltd | パターン形成方法およびそれを用いた半導体装置 |
JPH11297817A (ja) * | 1998-04-09 | 1999-10-29 | Hitachi Ltd | 半導体装置の製造方法およびその設計方法ならびに半導体装置 |
JP2002208643A (ja) * | 2001-01-10 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置の構造およびその製造方法 |
JP2003133442A (ja) * | 2001-10-22 | 2003-05-09 | Toshiba Corp | 半導体装置 |
JP2003273252A (ja) * | 2002-03-12 | 2003-09-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2004193178A (ja) * | 2002-12-06 | 2004-07-08 | Fasl Japan 株式会社 | 半導体記憶装置及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0828467B2 (ja) * | 1988-11-15 | 1996-03-21 | 株式会社東芝 | 半導体装置 |
JPH117556A (ja) | 1998-05-22 | 1999-01-12 | Nippon Signal Co Ltd:The | 自動改札機 |
JP4783027B2 (ja) * | 2005-01-24 | 2011-09-28 | パナソニック株式会社 | 半導体記憶装置 |
US7365378B2 (en) * | 2005-03-31 | 2008-04-29 | International Business Machines Corporation | MOSFET structure with ultra-low K spacer |
CN1893085A (zh) * | 2005-07-07 | 2007-01-10 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
-
2005
- 2005-07-27 WO PCT/JP2005/013763 patent/WO2007013155A1/ja active Application Filing
- 2005-07-27 JP JP2007526779A patent/JP4965445B2/ja active Active
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2006
- 2006-07-27 US US11/495,116 patent/US8183622B2/en active Active
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- 2011-12-12 US US13/323,538 patent/US9472563B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01107556A (ja) * | 1987-10-20 | 1989-04-25 | Hitachi Ltd | パターン形成方法およびそれを用いた半導体装置 |
JPH11297817A (ja) * | 1998-04-09 | 1999-10-29 | Hitachi Ltd | 半導体装置の製造方法およびその設計方法ならびに半導体装置 |
JP2002208643A (ja) * | 2001-01-10 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置の構造およびその製造方法 |
JP2003133442A (ja) * | 2001-10-22 | 2003-05-09 | Toshiba Corp | 半導体装置 |
JP2003273252A (ja) * | 2002-03-12 | 2003-09-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2004193178A (ja) * | 2002-12-06 | 2004-07-08 | Fasl Japan 株式会社 | 半導体記憶装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120315750A1 (en) | 2012-12-13 |
US8183622B2 (en) | 2012-05-22 |
JPWO2007013155A1 (ja) | 2009-02-05 |
US20070026604A1 (en) | 2007-02-01 |
US9472563B2 (en) | 2016-10-18 |
WO2007013155A1 (ja) | 2007-02-01 |
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