JPS6393153A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6393153A JPS6393153A JP61238388A JP23838886A JPS6393153A JP S6393153 A JPS6393153 A JP S6393153A JP 61238388 A JP61238388 A JP 61238388A JP 23838886 A JP23838886 A JP 23838886A JP S6393153 A JPS6393153 A JP S6393153A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- impurity
- silicon oxide
- silicon
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000012535 impurity Substances 0.000 claims description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 241000283984 Rodentia Species 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/061—Manufacture or treatment of lateral BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61238388A JPS6393153A (ja) | 1986-10-07 | 1986-10-07 | 半導体装置の製造方法 |
| US07/101,026 US4780426A (en) | 1986-10-07 | 1987-09-24 | Method for manufacturing high-breakdown voltage semiconductor device |
| DE8787114619T DE3783418T2 (de) | 1986-10-07 | 1987-10-07 | Verfahren zur herstellung einer halbleiterschaltung mit hoher durchbruchspannung. |
| EP87114619A EP0263504B1 (en) | 1986-10-07 | 1987-10-07 | Method for manufacturing high-breakdown voltage semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61238388A JPS6393153A (ja) | 1986-10-07 | 1986-10-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6393153A true JPS6393153A (ja) | 1988-04-23 |
| JPH0467781B2 JPH0467781B2 (en, 2012) | 1992-10-29 |
Family
ID=17029453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61238388A Granted JPS6393153A (ja) | 1986-10-07 | 1986-10-07 | 半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4780426A (en, 2012) |
| EP (1) | EP0263504B1 (en, 2012) |
| JP (1) | JPS6393153A (en, 2012) |
| DE (1) | DE3783418T2 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010267783A (ja) * | 2009-05-14 | 2010-11-25 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529329A (ja) * | 1991-07-24 | 1993-02-05 | Canon Inc | 半導体装置の製造方法 |
| JP2748898B2 (ja) * | 1995-08-31 | 1998-05-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US6117719A (en) * | 1997-12-18 | 2000-09-12 | Advanced Micro Devices, Inc. | Oxide spacers as solid sources for gallium dopant introduction |
| US6806197B2 (en) * | 2001-08-07 | 2004-10-19 | Micron Technology, Inc. | Method of forming integrated circuitry, and method of forming a contact opening |
| US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
| JP5452062B2 (ja) * | 2009-04-08 | 2014-03-26 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
| CN105493293B (zh) * | 2013-09-09 | 2018-08-24 | 株式会社日立制作所 | 半导体装置及其制造方法 |
| CN113178385B (zh) * | 2021-03-31 | 2022-12-23 | 青岛惠科微电子有限公司 | 一种芯片的制造方法、制造设备和芯片 |
| CN113990767A (zh) * | 2021-10-28 | 2022-01-28 | 西安微电子技术研究所 | 一种电压法测试扩散结深的方法 |
| CN115472697A (zh) * | 2022-08-30 | 2022-12-13 | 西安电子科技大学杭州研究院 | 一种具有优化掺杂分布的氧化镓mosfet器件 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5388579A (en) * | 1977-01-13 | 1978-08-04 | Nec Corp | Production of semiconductor device |
| JPS58215070A (ja) * | 1982-05-27 | 1983-12-14 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | プレ−ナ半導体装置およびその製造方法 |
| JPS59210666A (ja) * | 1983-05-16 | 1984-11-29 | Nec Corp | 半導体装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3834953A (en) * | 1970-02-07 | 1974-09-10 | Tokyo Shibaura Electric Co | Semiconductor devices containing as impurities as and p or b and the method of manufacturing the same |
| FR2154294B1 (en, 2012) * | 1971-09-27 | 1974-01-04 | Silec Semi Conducteurs | |
| JPS5538823B2 (en, 2012) * | 1971-12-22 | 1980-10-07 | ||
| US4060427A (en) * | 1976-04-05 | 1977-11-29 | Ibm Corporation | Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps |
| GB1548520A (en) * | 1976-08-27 | 1979-07-18 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductor device |
| JPS5795625A (en) * | 1980-12-04 | 1982-06-14 | Toshiba Corp | Manufacture of semiconductor device |
| JPS57124427A (en) * | 1981-01-26 | 1982-08-03 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5831519A (ja) * | 1981-08-18 | 1983-02-24 | Toshiba Corp | 半導体装置の製造方法 |
| JPS60117765A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1986
- 1986-10-07 JP JP61238388A patent/JPS6393153A/ja active Granted
-
1987
- 1987-09-24 US US07/101,026 patent/US4780426A/en not_active Expired - Lifetime
- 1987-10-07 DE DE8787114619T patent/DE3783418T2/de not_active Expired - Fee Related
- 1987-10-07 EP EP87114619A patent/EP0263504B1/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5388579A (en) * | 1977-01-13 | 1978-08-04 | Nec Corp | Production of semiconductor device |
| JPS58215070A (ja) * | 1982-05-27 | 1983-12-14 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | プレ−ナ半導体装置およびその製造方法 |
| JPS59210666A (ja) * | 1983-05-16 | 1984-11-29 | Nec Corp | 半導体装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010267783A (ja) * | 2009-05-14 | 2010-11-25 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
| US7919403B2 (en) | 2009-05-14 | 2011-04-05 | Mitsubishi Electric Corporation | Method of manufacturing silicon carbide semiconductor device |
| US8350353B2 (en) | 2009-05-14 | 2013-01-08 | Mitsubishi Electric Corporation | Method of manufacturing silicon carbide semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0263504B1 (en) | 1993-01-07 |
| JPH0467781B2 (en, 2012) | 1992-10-29 |
| DE3783418D1 (de) | 1993-02-18 |
| US4780426A (en) | 1988-10-25 |
| DE3783418T2 (de) | 1993-05-27 |
| EP0263504A3 (en) | 1989-10-18 |
| EP0263504A2 (en) | 1988-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102903633B (zh) | 用于制备阳极短路的场阑绝缘栅双极晶体管的方法 | |
| KR0139805B1 (ko) | 단일 실리콘 자기-정합 트랜지스터 및 이의 제조 방법 | |
| JPS6223171A (ja) | トランジスタ製造方法 | |
| JPH1050997A (ja) | Ｌｄｍｏｓデバイスおよび製造方法 | |
| JPS62188277A (ja) | 低濃度ド−プド構造形成方法 | |
| JP2012119718A (ja) | 高耐圧トランジスタ及びその製造方法 | |
| JPH04127480A (ja) | 高耐圧低抵抗半導体装置及びその製造方法 | |
| JP2673943B2 (ja) | Ｐ型領域に低抵抗オーム接点を形成する方法 | |
| JPS6393153A (ja) | 半導体装置の製造方法 | |
| CN116525608B (zh) | 一种tvs器件及其制造方法 | |
| JPS62113471A (ja) | バイポ−ラトランジスタに浅く、大量にド−プされた外因性ベ−ス領域を形成する方法 | |
| JP3997886B2 (ja) | 炭化珪素半導体装置の製造方法 | |
| WO2023273320A1 (zh) | 齐纳二极管及其制作方法 | |
| CN106920846A (zh) | 功率晶体管及其制造方法 | |
| JP2002511195A (ja) | バイポーラトランジスタを具える半導体デバイス及び該デバイスの製造方法 | |
| JPH10335630A (ja) | 半導体装置及びその製造方法 | |
| JP2615667B2 (ja) | Ｍｏｓ電界効果トランジスタの製造方法 | |
| JP3105237B2 (ja) | Ｄｍｏｓ型半導体装置の製造方法 | |
| JP2917646B2 (ja) | 半導体集積回路装置の製造方法 | |
| KR100400078B1 (ko) | 이종접합 쌍극자 트랜지스터의 제조방법 | |
| JPH0472771A (ja) | Ｍｏｓｆｅｔ | |
| JP3663238B2 (ja) | バイポーラトランジスタの製造方法 | |
| JP2770762B2 (ja) | 半導体装置の製造方法 | |
| JP2000058834A (ja) | 導電性強化型ｍｏｓ―ゲ―ト半導体装置の製造方法 | |
| CN115132576A (zh) | 用于rc-igbt离子注入的掩膜结构以及其制作方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |