JPS60117765A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60117765A
JPS60117765A JP58227261A JP22726183A JPS60117765A JP S60117765 A JPS60117765 A JP S60117765A JP 58227261 A JP58227261 A JP 58227261A JP 22726183 A JP22726183 A JP 22726183A JP S60117765 A JPS60117765 A JP S60117765A
Authority
JP
Japan
Prior art keywords
oxide film
region
implanted
emitter
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58227261A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481866B2 (ko
Inventor
Tsunenori Yamauchi
経則 山内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58227261A priority Critical patent/JPS60117765A/ja
Priority to KR1019840007463A priority patent/KR910002294B1/ko
Priority to DE8484308326T priority patent/DE3482526D1/de
Priority to EP84308326A priority patent/EP0143670B1/en
Publication of JPS60117765A publication Critical patent/JPS60117765A/ja
Priority to US07/090,419 priority patent/US4783423A/en
Publication of JPH0481866B2 publication Critical patent/JPH0481866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58227261A 1983-11-30 1983-11-30 半導体装置の製造方法 Granted JPS60117765A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58227261A JPS60117765A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法
KR1019840007463A KR910002294B1 (ko) 1983-11-30 1984-11-28 반도체장치의 제조방법
DE8484308326T DE3482526D1 (de) 1983-11-30 1984-11-30 Verfahren zum herstellen einer halbleiteranordnung.
EP84308326A EP0143670B1 (en) 1983-11-30 1984-11-30 Process for fabricating a semiconductor device
US07/090,419 US4783423A (en) 1983-11-30 1987-08-26 Fabrication of a semiconductor device containing deep emitter and another transistor with shallow doped region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58227261A JPS60117765A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60117765A true JPS60117765A (ja) 1985-06-25
JPH0481866B2 JPH0481866B2 (ko) 1992-12-25

Family

ID=16858045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58227261A Granted JPS60117765A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US4783423A (ko)
EP (1) EP0143670B1 (ko)
JP (1) JPS60117765A (ko)
KR (1) KR910002294B1 (ko)
DE (1) DE3482526D1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226061A (ja) * 1988-06-27 1992-08-14 Texas Instr Inc <Ti> バイポーラ・トランジスタとｊｆｅｔトランジスタを形成する工程

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393153A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置の製造方法
JP2549726B2 (ja) * 1989-01-30 1996-10-30 株式会社東芝 半導体集積回路とその製造方法
IT1234252B (it) * 1989-06-16 1992-05-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
US6566217B1 (en) 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device
KR100256169B1 (ko) * 1996-01-16 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 반도체 장치 및 그 제조방법
SE514707C2 (sv) 1998-11-04 2001-04-02 Ericsson Telefon Ab L M Metod för halvledartillverkning
US7067383B2 (en) * 2004-03-08 2006-06-27 Intersil Americas, Inc. Method of making bipolar transistors and resulting product

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114882A (ko) * 1973-02-28 1974-11-01
JPS53143184A (en) * 1977-05-20 1978-12-13 Matsushita Electric Ind Co Ltd Production of semiconductor integrated circuit
JPS5858763A (ja) * 1981-10-05 1983-04-07 Toshiba Corp 半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594241A (en) * 1968-01-11 1971-07-20 Tektronix Inc Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
NL162511C (nl) * 1969-01-11 1980-05-16 Philips Nv Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling.
US3758831A (en) * 1971-06-07 1973-09-11 Motorola Inc Transistor with improved breakdown mode
US3953255A (en) * 1971-12-06 1976-04-27 Harris Corporation Fabrication of matched complementary transistors in integrated circuits
JPS5180786A (ko) * 1975-01-10 1976-07-14 Nippon Electric Co
JPS5269587A (en) * 1975-12-08 1977-06-09 Hitachi Ltd Device and manufacture for high voltage resisting semiconductor
US4120707A (en) * 1977-03-30 1978-10-17 Harris Corporation Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion
DE2715158A1 (de) * 1977-04-05 1978-10-19 Licentia Gmbh Verfahren zur herstellung mindestens einer mit mindestens einer i hoch 2 l-schaltung integrierten analogschaltung
US4133701A (en) * 1977-06-29 1979-01-09 General Motors Corporation Selective enhancement of phosphorus diffusion by implanting halogen ions
JPS5555559A (en) * 1978-10-19 1980-04-23 Toshiba Corp Method of fabricating semiconductor device
JPS55153365A (en) * 1979-05-17 1980-11-29 Toshiba Corp Manufacturing method of semiconductor device
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5933860A (ja) * 1982-08-19 1984-02-23 Toshiba Corp 半導体装置およびその製造方法
US4553318A (en) * 1983-05-02 1985-11-19 Rca Corporation Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114882A (ko) * 1973-02-28 1974-11-01
JPS53143184A (en) * 1977-05-20 1978-12-13 Matsushita Electric Ind Co Ltd Production of semiconductor integrated circuit
JPS5858763A (ja) * 1981-10-05 1983-04-07 Toshiba Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226061A (ja) * 1988-06-27 1992-08-14 Texas Instr Inc <Ti> バイポーラ・トランジスタとｊｆｅｔトランジスタを形成する工程

Also Published As

Publication number Publication date
KR910002294B1 (ko) 1991-04-11
DE3482526D1 (de) 1990-07-19
EP0143670B1 (en) 1990-06-13
EP0143670A2 (en) 1985-06-05
EP0143670A3 (en) 1987-03-11
KR850004177A (ko) 1985-07-01
JPH0481866B2 (ko) 1992-12-25
US4783423A (en) 1988-11-08

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