JPS5667923A - Preparation method of semiconductor system - Google Patents

Preparation method of semiconductor system

Info

Publication number
JPS5667923A
JPS5667923A JP14327079A JP14327079A JPS5667923A JP S5667923 A JPS5667923 A JP S5667923A JP 14327079 A JP14327079 A JP 14327079A JP 14327079 A JP14327079 A JP 14327079A JP S5667923 A JPS5667923 A JP S5667923A
Authority
JP
Japan
Prior art keywords
film
monocrystal
opening part
layer
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14327079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643045B2 (enExample
Inventor
Hiroyuki Tango
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14327079A priority Critical patent/JPS5667923A/ja
Publication of JPS5667923A publication Critical patent/JPS5667923A/ja
Publication of JPS643045B2 publication Critical patent/JPS643045B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/0113—

Landscapes

  • Recrystallisation Techniques (AREA)
JP14327079A 1979-11-07 1979-11-07 Preparation method of semiconductor system Granted JPS5667923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14327079A JPS5667923A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14327079A JPS5667923A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP57087880A Division JPS5825271A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法
JP57087879A Division JPS5825222A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法
JP57087878A Division JPS5825221A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5667923A true JPS5667923A (en) 1981-06-08
JPS643045B2 JPS643045B2 (enExample) 1989-01-19

Family

ID=15334838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14327079A Granted JPS5667923A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Country Status (1)

Country Link
JP (1) JPS5667923A (enExample)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586121A (ja) * 1981-07-02 1983-01-13 Seiko Epson Corp 半導体基板
JPS5817674A (ja) * 1981-07-24 1983-02-01 Seiko Epson Corp Ｍｏｓ型半導体装置
JPS5837913A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS5839062A (ja) * 1981-09-02 1983-03-07 Toshiba Corp 半導体装置とその製造方法
JPS5853822A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置
JPS5853821A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置の製造方法
JPS5890769A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 積層半導体装置
JPS5893217A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体結晶膜の製造方法
JPS58175821A (ja) * 1982-04-08 1983-10-15 Toshiba Corp 半導体装置の製造方法
US4500388A (en) * 1981-11-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Method for forming monocrystalline semiconductor film on insulating film
JPS6055614A (ja) * 1983-09-07 1985-03-30 Agency Of Ind Science & Technol 半導体単結晶膜の製造方法
JPS60189217A (ja) * 1984-03-09 1985-09-26 Agency Of Ind Science & Technol 多層ｓｏｉ用シ−ド構造
JPS61199624A (ja) * 1985-03-02 1986-09-04 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPS62122120A (ja) * 1986-01-10 1987-06-03 Seiko Epson Corp 半導体基板の製造方法
JPS635559A (ja) * 1986-06-25 1988-01-11 Matsushita Electronics Corp 半導体装置の製造方法
JPS63285184A (ja) * 1988-04-22 1988-11-22 Seiko Epson Corp 単結晶膜の製造方法
JP2008505488A (ja) * 2004-06-30 2008-02-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 特徴の異なる結晶性半導体領域を有する基板の形成技術

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586121A (ja) * 1981-07-02 1983-01-13 Seiko Epson Corp 半導体基板
JPS5817674A (ja) * 1981-07-24 1983-02-01 Seiko Epson Corp Ｍｏｓ型半導体装置
JPS5837913A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS5839062A (ja) * 1981-09-02 1983-03-07 Toshiba Corp 半導体装置とその製造方法
JPS5853822A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置
JPS5853821A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置の製造方法
JPS5890769A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 積層半導体装置
US4500388A (en) * 1981-11-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Method for forming monocrystalline semiconductor film on insulating film
JPS5893217A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体結晶膜の製造方法
JPS58175821A (ja) * 1982-04-08 1983-10-15 Toshiba Corp 半導体装置の製造方法
JPS6055614A (ja) * 1983-09-07 1985-03-30 Agency Of Ind Science & Technol 半導体単結晶膜の製造方法
JPS60189217A (ja) * 1984-03-09 1985-09-26 Agency Of Ind Science & Technol 多層ｓｏｉ用シ−ド構造
JPS61199624A (ja) * 1985-03-02 1986-09-04 Agency Of Ind Science & Technol 半導体単結晶層の製造方法
JPS62122120A (ja) * 1986-01-10 1987-06-03 Seiko Epson Corp 半導体基板の製造方法
JPS635559A (ja) * 1986-06-25 1988-01-11 Matsushita Electronics Corp 半導体装置の製造方法
JPS63285184A (ja) * 1988-04-22 1988-11-22 Seiko Epson Corp 単結晶膜の製造方法
JP2008505488A (ja) * 2004-06-30 2008-02-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 特徴の異なる結晶性半導体領域を有する基板の形成技術

Also Published As

Publication number Publication date
JPS643045B2 (enExample) 1989-01-19

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