JPS5615529A - Semiconductor device and method of fabricating same - Google Patents

Semiconductor device and method of fabricating same

Info

Publication number
JPS5615529A
JPS5615529A JP9412180A JP9412180A JPS5615529A JP S5615529 A JPS5615529 A JP S5615529A JP 9412180 A JP9412180 A JP 9412180A JP 9412180 A JP9412180 A JP 9412180A JP S5615529 A JPS5615529 A JP S5615529A
Authority
JP
Japan
Prior art keywords
semiconductor device
fabricating same
fabricating
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9412180A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0145694B2 (US06815460-20041109-C00097.png
Inventor
Marii Yuugen Heberehitsu Aasaa
Heoriusu Petorasu F Herarudasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5615529A publication Critical patent/JPS5615529A/ja
Publication of JPH0145694B2 publication Critical patent/JPH0145694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C1/00Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon
    • C07C1/02Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon
    • C07C1/04Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon from carbon monoxide with hydrogen
    • C07C1/0425Catalysts; their physical properties
    • C07C1/0445Preparation; Activation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85Chromium, molybdenum or tungsten
    • B01J23/86Chromium
    • B01J23/862Iron and chromium
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C1/00Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon
    • C07C1/02Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon
    • C07C1/04Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon from carbon monoxide with hydrogen
    • C07C1/0425Catalysts; their physical properties
    • C07C1/043Catalysts; their physical properties characterised by the composition
    • C07C1/0435Catalysts; their physical properties characterised by the composition containing a metal of group 8 or a compound thereof
    • C07C1/044Catalysts; their physical properties characterised by the composition containing a metal of group 8 or a compound thereof containing iron
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/308Semiconductor cathodes, e.g. cathodes with PN junction layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2521/00Catalysts comprising the elements, oxides or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium or hafnium
    • C07C2521/06Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
    • C07C2521/08Silica
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2523/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00
    • C07C2523/16Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • C07C2523/24Chromium, molybdenum or tungsten
    • C07C2523/26Chromium
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2523/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00
    • C07C2523/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper
    • C07C2523/74Iron group metals
    • C07C2523/745Iron
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2523/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00
    • C07C2523/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper
    • C07C2523/76Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups C07C2523/02 - C07C2523/36
    • C07C2523/84Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups C07C2523/02 - C07C2523/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • C07C2523/85Chromium, molybdenum or tungsten
    • C07C2523/86Chromium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
JP9412180A 1979-07-13 1980-07-11 Semiconductor device and method of fabricating same Granted JPS5615529A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7905470,A NL184589C (nl) 1979-07-13 1979-07-13 Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS5615529A true JPS5615529A (en) 1981-02-14
JPH0145694B2 JPH0145694B2 (US06815460-20041109-C00097.png) 1989-10-04

Family

ID=19833535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9412180A Granted JPS5615529A (en) 1979-07-13 1980-07-11 Semiconductor device and method of fabricating same

Country Status (14)

Country Link
US (2) US4303930A (US06815460-20041109-C00097.png)
JP (1) JPS5615529A (US06815460-20041109-C00097.png)
AT (1) AT383441B (US06815460-20041109-C00097.png)
AU (1) AU537044B2 (US06815460-20041109-C00097.png)
BE (1) BE884289A (US06815460-20041109-C00097.png)
CA (1) CA1173487A (US06815460-20041109-C00097.png)
CH (1) CH652235A5 (US06815460-20041109-C00097.png)
DE (1) DE3025945C2 (US06815460-20041109-C00097.png)
ES (3) ES493310A0 (US06815460-20041109-C00097.png)
FR (1) FR2461350A1 (US06815460-20041109-C00097.png)
GB (1) GB2054959B (US06815460-20041109-C00097.png)
IT (1) IT1131955B (US06815460-20041109-C00097.png)
NL (1) NL184589C (US06815460-20041109-C00097.png)
SE (3) SE443061B (US06815460-20041109-C00097.png)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887731A (ja) * 1981-10-29 1983-05-25 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 画像記録または表示用陰極線管を具える装置
JPS58175242A (ja) * 1982-03-04 1983-10-14 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 撮像或いは像表示用装置およびこれに用いる半導体装置
JPS59161891A (ja) * 1983-02-21 1984-09-12 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 可干渉性放射線発生装置
JPS60157141A (ja) * 1983-12-27 1985-08-17 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 表示管
JPS61131330A (ja) * 1984-11-21 1986-06-19 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
JPS61193346A (ja) * 1985-02-14 1986-08-27 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体電子放出体を有する電子ビ−ム装置
JPS62272439A (ja) * 1986-05-20 1987-11-26 Canon Inc 電子放出装置
JPS62290053A (ja) * 1986-06-10 1987-12-16 Canon Inc 電子放出装置
JPS62290052A (ja) * 1986-06-10 1987-12-16 Canon Inc 電子放出装置
JPS63950A (ja) * 1986-06-19 1988-01-05 Canon Inc 電子放出装置
JPS6310428A (ja) * 1986-07-01 1988-01-18 Canon Inc 冷陰極装置
JPS6313247A (ja) * 1986-07-04 1988-01-20 Canon Inc 電子放出装置およびその製造方法
JPS6315771A (ja) * 1986-07-08 1988-01-22 Canon Inc 発光素子
JPS6319264A (ja) * 1986-07-11 1988-01-27 Canon Inc 帯電方法
JPS6319265A (ja) * 1986-07-11 1988-01-27 Canon Inc 帯電方法
JPS6340242A (ja) * 1986-08-05 1988-02-20 Canon Inc 荷電粒子発生装置
EP0256641A2 (en) 1986-06-23 1988-02-24 Canon Kabushiki Kaisha Method and apparatus for transferring information by utilizing electron beam
JPS6369133A (ja) * 1986-09-11 1988-03-29 Canon Inc 電子放出装置
JPH01100842A (ja) * 1987-10-12 1989-04-19 Canon Inc 電子線画像表示装置および電子線画像表示装置の偏向方法
JPH01100843A (ja) * 1987-10-13 1989-04-19 Canon Inc 電子線発生装置
JPH01220328A (ja) * 1988-02-27 1989-09-04 Canon Inc 半導体電子放出素子及び半導体電子放出装置
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
US4958104A (en) * 1986-08-20 1990-09-18 Canon Kabushiki Kaisha Display device having first and second cold cathodes
JPH02312153A (ja) * 1989-05-26 1990-12-27 Sharp Corp 半導体トランジスタの製造方法
JPH0395825A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体電子放出素子
JPH0395826A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体電子放出素子
JPH03129634A (ja) * 1989-10-13 1991-06-03 Canon Inc 電子放出素子の製造方法
US5270990A (en) * 1986-08-15 1993-12-14 Canon Kabushiki Kaisha Tracking error signal detecting apparatus using an electron beam and apparatus for effecting recording/reproduction of information by the utilization of a plurality of electron beams
US6184850B1 (en) 1991-09-04 2001-02-06 Canon Kabushiki Kaisha Image display apparatus with backlit display and method of driving the same
US6441390B2 (en) 2000-01-06 2002-08-27 Sony Corporation Electron discharging apparatus
JP2005317535A (ja) * 2004-04-29 2005-11-10 Samsung Sdi Co Ltd 電子放出素子

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB2109159B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
US4513308A (en) * 1982-09-23 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy p-n Junction controlled field emitter array cathode
DE3340777A1 (de) * 1983-11-11 1985-05-23 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren zur herstellung von duennfilm-feldeffekt-kathoden
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
NL8400632A (nl) * 1984-02-29 1985-09-16 Philips Nv Inrichting voor het opwekken van elektromagnetische straling.
NL8401866A (nl) * 1984-06-13 1986-01-02 Philips Nv Inrichting ten behoeve van elektronenemissie voorzien van een elektronenemittend lichaam met een laag van uittreepotentiaal verlagend materiaal en werkwijze voor het aanbrengen van een dergelijke laag van uittreepotentiaal verlagend materiaal.
NL8403537A (nl) * 1984-11-21 1986-06-16 Philips Nv Kathodestraalbuis met ionenval.
NL8403613A (nl) * 1984-11-28 1986-06-16 Philips Nv Elektronenbundelinrichting en halfgeleiderinrichting voor een dergelijke inrichting.
JPH0673372B2 (ja) * 1985-06-24 1994-09-14 三菱電機株式会社 光読み取り装置及びその製造方法
GB2183899A (en) * 1985-11-29 1987-06-10 Philips Electronic Associated Electron beam addressed memory
NL8600098A (nl) * 1986-01-20 1987-08-17 Philips Nv Kathodestraalbuis met ionenval.
NL8600676A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
DE3712473A1 (de) * 1986-04-14 1987-10-15 Canon Kk Bildaufzeichnungs- und/oder bildwiedergabeeinrichtung
US5025196A (en) * 1986-06-02 1991-06-18 Canon Kabushiki Kaisha Image forming device with beam current control
US4858062A (en) * 1986-06-04 1989-08-15 Canon Kabushiki Kaisha Charging device
US5691608A (en) * 1986-06-16 1997-11-25 Canon Kabushiki Kaisha Image display apparatus
US4994708A (en) * 1986-07-01 1991-02-19 Canon Kabushiki Kaisha Cold cathode device
DE3752249T2 (de) * 1986-07-04 1999-07-08 Canon K.K., Tokio/Tokyo Elektronen emittierende Vorrichtung
GB8621600D0 (en) * 1986-09-08 1987-03-18 Gen Electric Co Plc Vacuum devices
US5304815A (en) * 1986-09-11 1994-04-19 Canon Kabushiki Kaisha Electron emission elements
NL8700486A (nl) * 1987-02-27 1988-09-16 Philips Nv Weergeefinrichting.
NL8700487A (nl) * 1987-02-27 1988-09-16 Philips Nv Vacuuembuis met elektronenoptiek.
GB8707975D0 (en) * 1987-04-03 1987-05-07 Philips Nv Colour cathode ray tube
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
US5749763A (en) * 1987-07-15 1998-05-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulted from electrodes
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
NL8702829A (nl) * 1987-11-26 1989-06-16 Philips Nv Weergeefinrichting.
FR2637126B1 (fr) * 1988-09-23 1992-05-07 Thomson Csf Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
US5243197A (en) * 1989-06-23 1993-09-07 U.S. Philips Corp. Semiconductor device for generating an electron current
US5217401A (en) * 1989-07-07 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a field-emission type switching device
US5107311A (en) * 1989-08-02 1992-04-21 Canon Kabushiki Kaisha Semiconductor light-emitting device
DE69033677T2 (de) * 1989-09-04 2001-05-23 Canon K.K., Tokio/Tokyo Elektronenemissionselement- und Herstellungsverfahren desselben
US5814832A (en) * 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
EP0417354A1 (en) * 1989-09-15 1991-03-20 Koninklijke Philips Electronics N.V. Electron beam apparatus with charge-up compensation
US5079476A (en) * 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5169790A (en) * 1990-03-12 1992-12-08 Siemens Aktiengesellschaft Method of making thyristor having low reflection light-triggering structure
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
JPH0536369A (ja) * 1990-09-25 1993-02-12 Canon Inc 電子ビーム装置及びその駆動方法
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
NL9100122A (nl) * 1991-01-25 1992-08-17 Philips Nv Weergeefinrichting.
ATE155610T1 (de) * 1991-02-20 1997-08-15 Canon Kk Halbleiter-elektronenemissionseinrichtung
US5818500A (en) * 1991-05-06 1998-10-06 Eastman Kodak Company High resolution field emission image source and image recording apparatus
EP0532019B1 (en) * 1991-09-13 1997-12-29 Canon Kabushiki Kaisha Semiconductor electron emission device
FR2685811A1 (fr) * 1991-12-31 1993-07-02 Commissariat Energie Atomique Systeme permettant de maitriser la forme d'un faisceau de particules chargees.
US5237180A (en) * 1991-12-31 1993-08-17 Eastman Kodak Company High resolution image source
US5659224A (en) * 1992-03-16 1997-08-19 Microelectronics And Computer Technology Corporation Cold cathode display device
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
EP0601637B1 (en) 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
DE69329253T2 (de) * 1992-12-08 2000-12-14 Koninklijke Philips Electronics N.V., Eindhoven Kathodenstrahlröhre mit Halbleiterkathode.
KR970000963B1 (ko) * 1992-12-22 1997-01-21 재단법인 한국전자통신연구소 광게이트를 갖는 진공 트랜지스터 및 그 제조방법
US5550426A (en) * 1994-06-30 1996-08-27 Motorola Field emission device
EP0717878A1 (en) * 1994-06-30 1996-06-26 Koninklijke Philips Electronics N.V. Display device
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays
US5641706A (en) * 1996-01-18 1997-06-24 Micron Display Technology, Inc. Method for formation of a self-aligned N-well for isolated field emission devices
GB9616265D0 (en) * 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
TW373210B (en) * 1997-02-24 1999-11-01 Koninkl Philips Electronics Nv Electron tube having a semiconductor cathode
US6016027A (en) * 1997-05-19 2000-01-18 The Board Of Trustees Of The University Of Illinois Microdischarge lamp
JP3102783B2 (ja) * 1998-02-11 2000-10-23 三星電子株式会社 外部電界を利用して電子放出を活性化させた冷陰極電子放出素子
ATE249094T1 (de) 1998-06-11 2003-09-15 Petr Viscor Flacher elektronenemitter
US6372607B1 (en) * 1999-06-30 2002-04-16 Intel Corporation Photodiode structure
US6992698B1 (en) 1999-08-31 2006-01-31 Micron Technology, Inc. Integrated field emission array sensor, display, and transmitter, and apparatus including same
JP2001274390A (ja) * 2000-01-18 2001-10-05 Fuji Electric Co Ltd 高耐圧デバイスおよびその製造方法、不純物拡散領域の形成方法
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6781146B2 (en) 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6558968B1 (en) 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6914374B2 (en) * 2002-01-09 2005-07-05 Hewlett-Packard Development Company, L.P. Planar electron emitter apparatus with improved emission area and method of manufacture
US7511426B2 (en) * 2004-04-22 2009-03-31 The Board Of Trustees Of The University Of Illinois Microplasma devices excited by interdigitated electrodes
US7385350B2 (en) * 2004-10-04 2008-06-10 The Broad Of Trusstees Of The University Of Illinois Arrays of microcavity plasma devices with dielectric encapsulated electrodes
US7297041B2 (en) * 2004-10-04 2007-11-20 The Board Of Trustees Of The University Of Illinois Method of manufacturing microdischarge devices with encapsulated electrodes
US7573202B2 (en) * 2004-10-04 2009-08-11 The Board Of Trustees Of The University Of Illinois Metal/dielectric multilayer microdischarge devices and arrays
US7477017B2 (en) * 2005-01-25 2009-01-13 The Board Of Trustees Of The University Of Illinois AC-excited microcavity discharge device and method
US7884324B2 (en) * 2007-06-03 2011-02-08 Wisconsin Alumni Research Foundation Nanopillar arrays for electron emission
DE102011053684B4 (de) 2010-09-17 2019-03-28 Wisconsin Alumni Research Foundation Verfahren zur Durchführung von strahlformstossaktivierter Dissoziation im bereits bestehenden Ioneninjektionspfad eines Massenspektrometers
US9105434B2 (en) 2011-05-04 2015-08-11 The Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of Nevada, Las Vegas High current, high energy beam focusing element
EP2715777A4 (en) 2011-06-02 2015-03-04 Wisconsin Alumni Res Found MEMBRANE DETECTOR FOR MASS SPECTROMETRY DURING FLIGHT
DE102020113351A1 (de) * 2020-05-18 2021-11-18 Dbt Gmbh Elektronenemitterstruktur, Äußerer-Photoeffekt-Emitter, Partikelsammelvorrichtung Tunnel- Flächenemitter halbleiterbasierter Direktemitter, und Flüssigkeitsionisator mit derselben, Verfahren zum Erzeugen von freien Elektronen und Verfahren zum Sammeln von Partikeln

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
GB1303660A (US06815460-20041109-C00097.png) * 1969-11-12 1973-01-17
GB1303658A (US06815460-20041109-C00097.png) * 1969-11-12 1973-01-17
CA942824A (en) * 1970-06-08 1974-02-26 Robert J. Archer Cold cathode
US3735210A (en) * 1971-06-07 1973-05-22 Rca Corp Zener diode for monolithic integrated circuits
US3808477A (en) * 1971-12-17 1974-04-30 Gen Electric Cold cathode structure
US3894332A (en) * 1972-02-11 1975-07-15 Westinghouse Electric Corp Solid state radiation sensitive field electron emitter and methods of fabrication thereof
GB1457105A (en) * 1973-06-01 1976-12-01 English Electric Valve Co Ltd Electron guns
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
JPS5436828B2 (US06815460-20041109-C00097.png) * 1974-08-16 1979-11-12
DE2445480A1 (de) * 1974-09-24 1976-04-01 Ibm Deutschland Verfahren zur herstellung eines leistungstransistors
US4099998A (en) * 1975-11-03 1978-07-11 General Electric Company Method of making zener diodes with selectively variable breakdown voltages
JPS5258379A (en) * 1975-11-08 1977-05-13 Toshiba Corp Production of semiconductor element
NL7604569A (nl) * 1976-04-29 1977-11-01 Philips Nv Veldemitterinrichting en werkwijze tot het vormen daarvan.
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887731A (ja) * 1981-10-29 1983-05-25 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 画像記録または表示用陰極線管を具える装置
JPH0326493B2 (US06815460-20041109-C00097.png) * 1981-10-29 1991-04-11 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS58175242A (ja) * 1982-03-04 1983-10-14 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 撮像或いは像表示用装置およびこれに用いる半導体装置
JPS59161891A (ja) * 1983-02-21 1984-09-12 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 可干渉性放射線発生装置
JPS60157141A (ja) * 1983-12-27 1985-08-17 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 表示管
JPS61131330A (ja) * 1984-11-21 1986-06-19 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
JPS61193346A (ja) * 1985-02-14 1986-08-27 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体電子放出体を有する電子ビ−ム装置
JPS62272439A (ja) * 1986-05-20 1987-11-26 Canon Inc 電子放出装置
JPS62290052A (ja) * 1986-06-10 1987-12-16 Canon Inc 電子放出装置
JPS62290053A (ja) * 1986-06-10 1987-12-16 Canon Inc 電子放出装置
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
JPS63950A (ja) * 1986-06-19 1988-01-05 Canon Inc 電子放出装置
EP0256641A2 (en) 1986-06-23 1988-02-24 Canon Kabushiki Kaisha Method and apparatus for transferring information by utilizing electron beam
US5355127A (en) * 1986-06-23 1994-10-11 Canon Kabushiki Kaisha Method and apparatus for transferring information by utilizing electron beam
JPS6310428A (ja) * 1986-07-01 1988-01-18 Canon Inc 冷陰極装置
JPS6313247A (ja) * 1986-07-04 1988-01-20 Canon Inc 電子放出装置およびその製造方法
JPS6315771A (ja) * 1986-07-08 1988-01-22 Canon Inc 発光素子
JPS6319264A (ja) * 1986-07-11 1988-01-27 Canon Inc 帯電方法
JPS6319265A (ja) * 1986-07-11 1988-01-27 Canon Inc 帯電方法
JPS6340242A (ja) * 1986-08-05 1988-02-20 Canon Inc 荷電粒子発生装置
US5270990A (en) * 1986-08-15 1993-12-14 Canon Kabushiki Kaisha Tracking error signal detecting apparatus using an electron beam and apparatus for effecting recording/reproduction of information by the utilization of a plurality of electron beams
US4958104A (en) * 1986-08-20 1990-09-18 Canon Kabushiki Kaisha Display device having first and second cold cathodes
JPS6369133A (ja) * 1986-09-11 1988-03-29 Canon Inc 電子放出装置
JPH01100842A (ja) * 1987-10-12 1989-04-19 Canon Inc 電子線画像表示装置および電子線画像表示装置の偏向方法
JPH01100843A (ja) * 1987-10-13 1989-04-19 Canon Inc 電子線発生装置
JPH01220328A (ja) * 1988-02-27 1989-09-04 Canon Inc 半導体電子放出素子及び半導体電子放出装置
JPH02312153A (ja) * 1989-05-26 1990-12-27 Sharp Corp 半導体トランジスタの製造方法
JPH0395826A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体電子放出素子
JPH0395825A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体電子放出素子
JPH03129634A (ja) * 1989-10-13 1991-06-03 Canon Inc 電子放出素子の製造方法
US6184850B1 (en) 1991-09-04 2001-02-06 Canon Kabushiki Kaisha Image display apparatus with backlit display and method of driving the same
US6441390B2 (en) 2000-01-06 2002-08-27 Sony Corporation Electron discharging apparatus
JP2005317535A (ja) * 2004-04-29 2005-11-10 Samsung Sdi Co Ltd 電子放出素子

Also Published As

Publication number Publication date
SE8009140L (sv) 1981-01-14
BE884289A (fr) 1981-01-12
SE8005070L (sv) 1981-01-14
NL184589B (nl) 1989-04-03
IT1131955B (it) 1986-06-25
ES8105117A1 (es) 1981-05-16
ES493310A0 (es) 1981-05-16
SE446417B (sv) 1986-09-08
GB2054959A (en) 1981-02-18
AU537044B2 (en) 1984-05-31
US4303930A (en) 1981-12-01
ES8106631A1 (es) 1981-06-16
NL7905470A (nl) 1981-01-15
FR2461350A1 (fr) 1981-01-30
ES495231A0 (es) 1981-06-16
GB2054959B (en) 1983-06-22
DE3025945A1 (de) 1981-01-29
SE443061B (sv) 1986-02-10
NL184589C (nl) 1989-09-01
ATA365480A (de) 1986-11-15
IT8023378A0 (it) 1980-07-10
ES495230A0 (es) 1981-06-16
AT383441B (de) 1987-07-10
ES8106632A1 (es) 1981-06-16
US4370797A (en) 1983-02-01
DE3025945C2 (de) 1987-01-02
CH652235A5 (de) 1985-10-31
FR2461350B1 (US06815460-20041109-C00097.png) 1984-10-19
JPH0145694B2 (US06815460-20041109-C00097.png) 1989-10-04
AU6033480A (en) 1981-01-15
CA1173487A (en) 1984-08-28

Similar Documents

Publication Publication Date Title
JPS5615529A (en) Semiconductor device and method of fabricating same
JPS55160473A (en) Semiconductor device and method of fabricating same
JPS55108752A (en) Semiconductor device and method of fabricating same
JPS5623779A (en) Semiconductor device and method of manufacturing same
JPS55160476A (en) Phtovoltaic device and method of fabricating same
JPS56124274A (en) Serial connecting combination of 22terminal semiconductor device and method of forming same
JPS5567172A (en) Method of fabricating semiconductor and semiconductor device
DE3174468D1 (en) Semiconductor device and method of manufacturing the same
DE3069594D1 (en) Semiconductor device and method of manufacturing the same
JPS54158190A (en) Semiconductor device and method of fabricating same
JPS5650563A (en) Method of manufacturing semiconductor device
JPS5650578A (en) Semiconductor device and method of manufacturing same
JPS54158896A (en) Piezooelectric device and method of fabricating same
JPS54158881A (en) Field effect device and method of fabricating same
JPS55141753A (en) Method of fabricating semiconductor device
JPS571260A (en) Semiconductor device and method of manufacturing same
JPS55132054A (en) Semiconductor device and method of fabricating same
JPS5596653A (en) Semiconductor device and method of fabricating same
JPS5696868A (en) Method of manufacturing semiconductor device
JPS54136281A (en) Semiconductor device and method of fabricating same
JPS55146957A (en) Semiconductor resistor and method of fabricating same
JPS5693366A (en) Method of manufacturing semiconductor device
JPS5664461A (en) Semiconductor device and method of manufacturing same
JPS5491187A (en) Semiconductor and method of fabricating same
JPS5593271A (en) Method of fabricating integrated semiconductor device