ATE155610T1 - Halbleiter-elektronenemissionseinrichtung - Google Patents

Halbleiter-elektronenemissionseinrichtung

Info

Publication number
ATE155610T1
ATE155610T1 AT92102746T AT92102746T ATE155610T1 AT E155610 T1 ATE155610 T1 AT E155610T1 AT 92102746 T AT92102746 T AT 92102746T AT 92102746 T AT92102746 T AT 92102746T AT E155610 T1 ATE155610 T1 AT E155610T1
Authority
AT
Austria
Prior art keywords
type semiconductor
semiconductor region
high density
density
electron emission
Prior art date
Application number
AT92102746T
Other languages
English (en)
Inventor
Nobuo Watanabe
Norio Kaneko
Masahiko Okunuki
Takeo Tsukamoto
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4557991A external-priority patent/JP3135070B2/ja
Priority claimed from JP5559791A external-priority patent/JP3137267B2/ja
Priority claimed from JP23445691A external-priority patent/JPH0574330A/ja
Priority claimed from JP23445791A external-priority patent/JPH0574331A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE155610T1 publication Critical patent/ATE155610T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Electrodes Of Semiconductors (AREA)
AT92102746T 1991-02-20 1992-02-19 Halbleiter-elektronenemissionseinrichtung ATE155610T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4557991A JP3135070B2 (ja) 1991-02-20 1991-02-20 半導体電子放出素子
JP5559791A JP3137267B2 (ja) 1991-02-28 1991-02-28 半導体電子放出素子
JP23445691A JPH0574330A (ja) 1991-09-13 1991-09-13 半導体電子放出素子
JP23445791A JPH0574331A (ja) 1991-09-13 1991-09-13 半導体電子放出素子

Publications (1)

Publication Number Publication Date
ATE155610T1 true ATE155610T1 (de) 1997-08-15

Family

ID=27461730

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92102746T ATE155610T1 (de) 1991-02-20 1992-02-19 Halbleiter-elektronenemissionseinrichtung

Country Status (3)

Country Link
EP (1) EP0504603B1 (de)
AT (1) ATE155610T1 (de)
DE (1) DE69220823T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SK18512000A3 (sk) 1998-06-11 2003-01-09 Petr Viscor Planárny elektrónový emitor (PEE)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置

Also Published As

Publication number Publication date
EP0504603A1 (de) 1992-09-23
DE69220823T2 (de) 1998-01-22
EP0504603B1 (de) 1997-07-16
DE69220823D1 (de) 1997-08-21

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties