JPS5515229A - Semiconductor photograph device - Google Patents

Semiconductor photograph device

Info

Publication number
JPS5515229A
JPS5515229A JP8798878A JP8798878A JPS5515229A JP S5515229 A JPS5515229 A JP S5515229A JP 8798878 A JP8798878 A JP 8798878A JP 8798878 A JP8798878 A JP 8798878A JP S5515229 A JPS5515229 A JP S5515229A
Authority
JP
Japan
Prior art keywords
gate
electrode
layer
drain
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8798878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6149822B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP8798878A priority Critical patent/JPS5515229A/ja
Priority to US06/039,445 priority patent/US4427990A/en
Publication of JPS5515229A publication Critical patent/JPS5515229A/ja
Publication of JPS6149822B2 publication Critical patent/JPS6149822B2/ja
Priority to US07/332,441 priority patent/US5019876A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP8798878A 1978-07-14 1978-07-18 Semiconductor photograph device Granted JPS5515229A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8798878A JPS5515229A (en) 1978-07-18 1978-07-18 Semiconductor photograph device
US06/039,445 US4427990A (en) 1978-07-14 1979-05-15 Semiconductor photo-electric converter with insulated gate over p-n charge storage region
US07/332,441 US5019876A (en) 1978-07-14 1989-04-04 Semiconductor photo-electric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8798878A JPS5515229A (en) 1978-07-18 1978-07-18 Semiconductor photograph device

Publications (2)

Publication Number Publication Date
JPS5515229A true JPS5515229A (en) 1980-02-02
JPS6149822B2 JPS6149822B2 (enrdf_load_stackoverflow) 1986-10-31

Family

ID=13930187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8798878A Granted JPS5515229A (en) 1978-07-14 1978-07-18 Semiconductor photograph device

Country Status (1)

Country Link
JP (1) JPS5515229A (enrdf_load_stackoverflow)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735369A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Semiconductor device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS58112867U (ja) * 1982-01-26 1983-08-02 カルソニックカンセイ株式会社 熱交換器
DE3345189A1 (de) * 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345135A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345176A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3344637A1 (de) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Photoelektrischer halbleiterwandler
DE3345238A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345190A1 (de) * 1982-12-14 1984-06-14 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildaufnahmewandlerelement
DE3345175A1 (de) * 1982-12-14 1984-06-14 Nishizawa Junichi Festkoerper-bildaufnahmewandlerelement
DE3345147A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
JPS59108346A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa 固体撮像装置の製造方法
DE3407038A1 (de) * 1983-02-28 1984-08-30 Nishizawa, Jun-Ichi, Sendai, Miyagi Halbleiter-photodetektor und verfahren zu dessen antrieb
JPS59158680A (ja) * 1983-03-01 1984-09-08 Junichi Nishizawa 固体撮像装置
JPS6012760A (ja) * 1983-07-02 1985-01-23 Tadahiro Omi 光電変換装置及び光電変換方法
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPS60105272A (ja) * 1983-11-14 1985-06-10 Olympus Optical Co Ltd 固体撮像装置
EP0096725A4 (en) * 1981-12-17 1985-07-01 Fuji Photo Film Co Ltd Semiconductor image pick-up device.
FR2557729A1 (fr) * 1983-12-28 1985-07-05 Olympus Optical Co Dispositif convertisseur photoelectrique a semi-conducteurs
EP0111346A3 (en) * 1982-12-13 1985-10-09 Nishizawa, Jun-Ichi One-dimensional semiconductor imaging device
DE3513436A1 (de) 1984-04-17 1985-10-31 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildsensor
EP0111880A3 (en) * 1982-12-13 1985-12-18 Nishizawa, Jun-Ichi Semiconductor image device
EP0118568A4 (en) * 1982-09-09 1985-12-19 Fuji Photo Film Co Ltd SEMICONDUCTOR IMAGE TAKING DEVICE.
US4857981A (en) * 1986-07-03 1989-08-15 Olympus Optical Co., Ltd. Semiconductor imaging device
JPH0340570A (ja) * 1990-07-02 1991-02-21 Canon Inc 光トランジスタのリフレッシュ方法
JPH0340574A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置
JPH0340467A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735369A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Semiconductor device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
EP0096725A4 (en) * 1981-12-17 1985-07-01 Fuji Photo Film Co Ltd Semiconductor image pick-up device.
JPS58112867U (ja) * 1982-01-26 1983-08-02 カルソニックカンセイ株式会社 熱交換器
EP0118568A4 (en) * 1982-09-09 1985-12-19 Fuji Photo Film Co Ltd SEMICONDUCTOR IMAGE TAKING DEVICE.
DE3344637A1 (de) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Photoelektrischer halbleiterwandler
EP0111346A3 (en) * 1982-12-13 1985-10-09 Nishizawa, Jun-Ichi One-dimensional semiconductor imaging device
EP0111880A3 (en) * 1982-12-13 1985-12-18 Nishizawa, Jun-Ichi Semiconductor image device
DE3345190A1 (de) * 1982-12-14 1984-06-14 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildaufnahmewandlerelement
DE3345175A1 (de) * 1982-12-14 1984-06-14 Nishizawa Junichi Festkoerper-bildaufnahmewandlerelement
DE3345147A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
JPS59108346A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa 固体撮像装置の製造方法
DE3345238A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
US4684968A (en) * 1982-12-14 1987-08-04 Olympus Optical Co., Ltd. JFET imager having light sensing inversion layer induced by insulator charge
DE3345176A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345135A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345189A1 (de) * 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3407038A1 (de) * 1983-02-28 1984-08-30 Nishizawa, Jun-Ichi, Sendai, Miyagi Halbleiter-photodetektor und verfahren zu dessen antrieb
JPS59158551A (ja) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd 半導体光検出装置及びその駆動方法
JPS59158680A (ja) * 1983-03-01 1984-09-08 Junichi Nishizawa 固体撮像装置
JPS6012760A (ja) * 1983-07-02 1985-01-23 Tadahiro Omi 光電変換装置及び光電変換方法
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPS60105272A (ja) * 1983-11-14 1985-06-10 Olympus Optical Co Ltd 固体撮像装置
FR2557729A1 (fr) * 1983-12-28 1985-07-05 Olympus Optical Co Dispositif convertisseur photoelectrique a semi-conducteurs
DE3513436A1 (de) 1984-04-17 1985-10-31 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildsensor
US4857981A (en) * 1986-07-03 1989-08-15 Olympus Optical Co., Ltd. Semiconductor imaging device
JPH0340570A (ja) * 1990-07-02 1991-02-21 Canon Inc 光トランジスタのリフレッシュ方法
JPH0340574A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置
JPH0340467A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置

Also Published As

Publication number Publication date
JPS6149822B2 (enrdf_load_stackoverflow) 1986-10-31

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