JPS55150225A - Method of correcting white spot fault of photomask - Google Patents

Method of correcting white spot fault of photomask

Info

Publication number
JPS55150225A
JPS55150225A JP5711379A JP5711379A JPS55150225A JP S55150225 A JPS55150225 A JP S55150225A JP 5711379 A JP5711379 A JP 5711379A JP 5711379 A JP5711379 A JP 5711379A JP S55150225 A JPS55150225 A JP S55150225A
Authority
JP
Japan
Prior art keywords
fault
white spot
film
produce
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5711379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS627540B2 (enrdf_load_stackoverflow
Inventor
Takeoki Miyauchi
Mikio Hongo
Masao Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5711379A priority Critical patent/JPS55150225A/ja
Publication of JPS55150225A publication Critical patent/JPS55150225A/ja
Publication of JPS627540B2 publication Critical patent/JPS627540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP5711379A 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask Granted JPS55150225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5711379A JPS55150225A (en) 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5711379A JPS55150225A (en) 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61213822A Division JPS6284518A (ja) 1986-09-12 1986-09-12 イオンビ−ム加工装置
JP61213821A Division JPS6285253A (ja) 1986-09-12 1986-09-12 マスクの欠陥修正方法

Publications (2)

Publication Number Publication Date
JPS55150225A true JPS55150225A (en) 1980-11-22
JPS627540B2 JPS627540B2 (enrdf_load_stackoverflow) 1987-02-18

Family

ID=13046463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5711379A Granted JPS55150225A (en) 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask

Country Status (1)

Country Link
JP (1) JPS55150225A (enrdf_load_stackoverflow)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154733A (en) * 1979-05-21 1980-12-02 Oki Electric Ind Co Ltd Method of correcting defective mask
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS5893052A (ja) * 1981-11-30 1983-06-02 Seiko Epson Corp ホトマスク
JPS58196020A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd マスクの欠陥検査・修正方法およびその装置
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
JPS59208830A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd イオンビ−ム加工方法およびその装置
FR2547111A1 (fr) * 1983-05-31 1984-12-07 American Telephone & Telegraph Procede de correction de masques lithographiques
JPS6094728A (ja) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd 荷電粒子ビームを用いた加工方法およびその装置
JPS6186753A (ja) * 1984-10-03 1986-05-02 Seiko Instr & Electronics Ltd マスク欠陥修正終了検出方法
JPS6166349U (enrdf_load_stackoverflow) * 1984-10-03 1986-05-07
JPS61113234A (ja) * 1984-11-08 1986-05-31 Jeol Ltd マスクの欠陥修正方法
JPS6281640A (ja) * 1985-10-07 1987-04-15 Seiko Instr & Electronics Ltd マスクリペア装置
JPS62156958U (enrdf_load_stackoverflow) * 1986-03-28 1987-10-05
JPS62237454A (ja) * 1986-04-09 1987-10-17 Hitachi Ltd イオンビ−ムによるフオトマスクの白点欠陥修正方法
JPS6310162A (ja) * 1986-06-30 1988-01-16 Hoya Corp フオトマスク
JPS63170940A (ja) * 1987-12-02 1988-07-14 Hitachi Ltd Ｉｃ素子の修正方法
JPS63296241A (ja) * 1987-12-02 1988-12-02 Hitachi Ltd Ｉｃ素子の加工装置
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
JPH01124857A (ja) * 1988-09-30 1989-05-17 Hitachi Ltd イオンビーム加工装置
JPH01124856A (ja) * 1988-09-30 1989-05-17 Hitachi Ltd マスクの欠陥修正方法
JPH0260A (ja) * 1989-05-12 1990-01-05 Hitachi Ltd イオンビーム加工装置
USRE33193E (en) * 1981-09-30 1990-04-03 Hitachi, Ltd. Ion beam processing apparatus and method of correcting mask defects
US5350649A (en) * 1988-11-22 1994-09-27 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154733A (en) * 1979-05-21 1980-12-02 Oki Electric Ind Co Ltd Method of correcting defective mask
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
USRE33193E (en) * 1981-09-30 1990-04-03 Hitachi, Ltd. Ion beam processing apparatus and method of correcting mask defects
JPS5893052A (ja) * 1981-11-30 1983-06-02 Seiko Epson Corp ホトマスク
JPS58196020A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd マスクの欠陥検査・修正方法およびその装置
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
JPS59208830A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd イオンビ−ム加工方法およびその装置
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
FR2547111A1 (fr) * 1983-05-31 1984-12-07 American Telephone & Telegraph Procede de correction de masques lithographiques
JPS6094728A (ja) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd 荷電粒子ビームを用いた加工方法およびその装置
JPS6186753A (ja) * 1984-10-03 1986-05-02 Seiko Instr & Electronics Ltd マスク欠陥修正終了検出方法
JPS6166349U (enrdf_load_stackoverflow) * 1984-10-03 1986-05-07
JPS61113234A (ja) * 1984-11-08 1986-05-31 Jeol Ltd マスクの欠陥修正方法
JPS6281640A (ja) * 1985-10-07 1987-04-15 Seiko Instr & Electronics Ltd マスクリペア装置
JPS62156958U (enrdf_load_stackoverflow) * 1986-03-28 1987-10-05
JPS62237454A (ja) * 1986-04-09 1987-10-17 Hitachi Ltd イオンビ−ムによるフオトマスクの白点欠陥修正方法
JPS6310162A (ja) * 1986-06-30 1988-01-16 Hoya Corp フオトマスク
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
JPS63170940A (ja) * 1987-12-02 1988-07-14 Hitachi Ltd Ｉｃ素子の修正方法
JPS63296241A (ja) * 1987-12-02 1988-12-02 Hitachi Ltd Ｉｃ素子の加工装置
JPH01124856A (ja) * 1988-09-30 1989-05-17 Hitachi Ltd マスクの欠陥修正方法
JPH01124857A (ja) * 1988-09-30 1989-05-17 Hitachi Ltd イオンビーム加工装置
US5830606A (en) * 1988-11-22 1998-11-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5350649A (en) * 1988-11-22 1994-09-27 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5484671A (en) * 1988-11-22 1996-01-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5948574A (en) * 1988-11-22 1999-09-07 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6106981A (en) * 1988-11-22 2000-08-22 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6420075B1 (en) 1988-11-22 2002-07-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6458497B2 (en) 1988-11-22 2002-10-01 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6733933B2 (en) 1988-11-22 2004-05-11 Renesas Technology Corporation Mask for manufacturing semiconductor device and method of manufacture thereof
US7008736B2 (en) 1988-11-22 2006-03-07 Renesas Technology Corp. Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region
JPH0260A (ja) * 1989-05-12 1990-01-05 Hitachi Ltd イオンビーム加工装置

Also Published As

Publication number Publication date
JPS627540B2 (enrdf_load_stackoverflow) 1987-02-18

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