JPH0730095A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH0730095A
JPH0730095A JP5154642A JP15464293A JPH0730095A JP H0730095 A JPH0730095 A JP H0730095A JP 5154642 A JP5154642 A JP 5154642A JP 15464293 A JP15464293 A JP 15464293A JP H0730095 A JPH0730095 A JP H0730095A
Authority
JP
Japan
Prior art keywords
electrode
film
semiconductor device
wiring
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5154642A
Other languages
English (en)
Japanese (ja)
Inventor
Toshihiko Shiga
俊彦 志賀
Akira Hattori
亮 服部
Yuuki Oku
友希 奥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5154642A priority Critical patent/JPH0730095A/ja
Priority to GB9323286A priority patent/GB2279498B/en
Priority to GB9702460A priority patent/GB2307103B/en
Priority to FR9314598A priority patent/FR2707042B1/fr
Priority to US08/312,960 priority patent/US5498572A/en
Publication of JPH0730095A publication Critical patent/JPH0730095A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP5154642A 1993-06-25 1993-06-25 半導体装置及びその製造方法 Pending JPH0730095A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP5154642A JPH0730095A (ja) 1993-06-25 1993-06-25 半導体装置及びその製造方法
GB9323286A GB2279498B (en) 1993-06-25 1993-11-11 Electrode connections for semiconductor devices
GB9702460A GB2307103B (en) 1993-06-25 1993-11-11 Electrode connections for semiconductor devices
FR9314598A FR2707042B1 (enExample) 1993-06-25 1993-12-06
US08/312,960 US5498572A (en) 1993-06-25 1994-09-30 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5154642A JPH0730095A (ja) 1993-06-25 1993-06-25 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
JPH0730095A true JPH0730095A (ja) 1995-01-31

Family

ID=15588684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5154642A Pending JPH0730095A (ja) 1993-06-25 1993-06-25 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US5498572A (enExample)
JP (1) JPH0730095A (enExample)
FR (1) FR2707042B1 (enExample)
GB (1) GB2279498B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7420998B2 (en) * 2004-04-06 2008-09-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US8278667B2 (en) 2009-08-11 2012-10-02 Fuji Xerox Co., Ltd. Light-emitting element and light-emitting element fabrication method
CN107039382A (zh) * 2016-02-02 2017-08-11 英飞凌科技股份有限公司 功率半导体器件负载端子

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144956B1 (ko) * 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
US5892282A (en) * 1995-05-31 1999-04-06 Texas Instruments Incorporated Barrier-less plug structure
TW480636B (en) 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
US11158571B2 (en) * 2018-12-20 2021-10-26 Micron Technology, Inc. Devices including conductive interconnect structures, related electronic systems, and related methods

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614668B2 (de) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Halbleiter-Anordnung mit Großflächigen, gut lötbaren Kontaktelektroden und Verfahren zu ihrer Herstellung
JPS59175763A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置
JPS6066465A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
EP0613180A3 (en) * 1985-05-13 1994-10-19 Toshiba Kk Semiconductor arrangement with connecting electrodes.
JPH065734B2 (ja) * 1985-09-28 1994-01-19 新日本無線株式会社 半導体装置
JPS6289355A (ja) * 1985-10-16 1987-04-23 Hitachi Ltd 半導体装置
JPS62128153A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS6373660A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置
JPS63258021A (ja) * 1987-04-16 1988-10-25 Toshiba Corp 接続孔の形成方法
US4987562A (en) * 1987-08-28 1991-01-22 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
KR910006967B1 (ko) * 1987-11-18 1991-09-14 가시오 게이상기 가부시기가이샤 반도체 장치의 범프 전극 구조 및 그 형성 방법
EP0339871A3 (en) * 1988-04-29 1990-12-27 Advanced Micro Devices, Inc. Corrosion tolerant bonding pad and method of fabricating same
JPH0666287B2 (ja) * 1988-07-25 1994-08-24 富士通株式会社 半導体装置の製造方法
EP0363297B1 (en) * 1988-10-03 1994-03-23 International Business Machines Corporation Improved contact stud structure for semiconductor devices
JPH02105529A (ja) * 1988-10-14 1990-04-18 Nec Corp 半導体装置の製造方法
JPH02125427A (ja) * 1988-11-04 1990-05-14 Yamaha Corp コンタクト孔形成法
US5041393A (en) * 1988-12-28 1991-08-20 At&T Bell Laboratories Fabrication of GaAs integrated circuits
JP2661333B2 (ja) * 1989-06-05 1997-10-08 モトローラ・インコーポレーテツド 金属被覆化プロセス処理方法
EP0412185A1 (de) * 1989-08-09 1991-02-13 Siemens Aktiengesellschaft Metallisierung mit Diffusionsbarriere für Halbleiterbauelemente
JPH0396276A (ja) * 1989-09-09 1991-04-22 Mitsubishi Electric Corp 半導体装置
EP0469768A1 (en) * 1990-07-31 1992-02-05 AT&T Corp. A substantially linear field effect transistor and method of making same
AU3226793A (en) * 1991-11-26 1993-06-28 Materials Research Corporation Method of modifying contact resistance in semiconductor devices and articles produced thereby
JPH05175716A (ja) * 1991-12-19 1993-07-13 Furuno Electric Co Ltd 移動体用アンテナ指向装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7420998B2 (en) * 2004-04-06 2008-09-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US7664152B2 (en) 2004-04-06 2010-02-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US8278667B2 (en) 2009-08-11 2012-10-02 Fuji Xerox Co., Ltd. Light-emitting element and light-emitting element fabrication method
CN107039382A (zh) * 2016-02-02 2017-08-11 英飞凌科技股份有限公司 功率半导体器件负载端子
JP2017175117A (ja) * 2016-02-02 2017-09-28 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 電力用半導体素子の負荷端子
US10079217B2 (en) 2016-02-02 2018-09-18 Infineon Technologies Ag Power semiconductor device load terminal
JP2019054249A (ja) * 2016-02-02 2019-04-04 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 電力用半導体素子の負荷端子
CN107039382B (zh) * 2016-02-02 2019-07-12 英飞凌科技股份有限公司 功率半导体器件负载端子
US11315892B2 (en) 2016-02-02 2022-04-26 Infineon Technologies Ag Power semiconductor device load terminal

Also Published As

Publication number Publication date
GB9323286D0 (en) 1994-01-05
GB2279498B (en) 1997-09-17
FR2707042A1 (enExample) 1994-12-30
FR2707042B1 (enExample) 1997-11-28
US5498572A (en) 1996-03-12
GB2279498A (en) 1995-01-04

Similar Documents

Publication Publication Date Title
JPH0719841B2 (ja) 半導体装置
JPH0817925A (ja) 半導体装置とその製法
JPH0730095A (ja) 半導体装置及びその製造方法
US7163884B2 (en) Semiconductor device and fabrication method thereof
JP3407516B2 (ja) 半導体装置及びその製造方法
JPH08139190A (ja) 半導体装置の製造方法
JPS62165342A (ja) 半導体装置
JPH0691090B2 (ja) 半導体装置の製造方法
JP2003142521A (ja) 半導体装置およびその製造方法
JPS6381948A (ja) 多層配線半導体装置
JPH04731A (ja) 半導体装置及びその製造方法
CN1103119C (zh) 用于单掩膜c4焊料凸点制造的方法
JP3655048B2 (ja) 半導体装置およびその製造方法
JPH04348047A (ja) 半導体集積回路電極
JPS641064B2 (enExample)
JPH06151355A (ja) 半導体装置及びその製造方法
JP3688335B2 (ja) 半導体集積回路装置およびその製造方法ならびに半導体ウエハ
JPS5810836A (ja) 半導体装置
JPS6059742B2 (ja) 半導体装置およびその製造方法
JPH1154617A (ja) 半導体装置の製造方法
GB2307103A (en) Electrode connections for semiconductor devices
JPH01233739A (ja) 半導体装置の製造方法
JPS6015150B2 (ja) 半導体装置の製法
JPS61124152A (ja) 半導体集積回路装置
JPH1197536A (ja) 半導体装置の製造方法