GB2279498B - Electrode connections for semiconductor devices - Google Patents

Electrode connections for semiconductor devices

Info

Publication number
GB2279498B
GB2279498B GB9323286A GB9323286A GB2279498B GB 2279498 B GB2279498 B GB 2279498B GB 9323286 A GB9323286 A GB 9323286A GB 9323286 A GB9323286 A GB 9323286A GB 2279498 B GB2279498 B GB 2279498B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
electrode connections
connections
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9323286A
Other languages
English (en)
Other versions
GB9323286D0 (en
GB2279498A (en
Inventor
Toshihiko Shiga
Ryo Hattori
Tomoki Oku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to GB9702460A priority Critical patent/GB2307103B/en
Publication of GB9323286D0 publication Critical patent/GB9323286D0/en
Publication of GB2279498A publication Critical patent/GB2279498A/en
Application granted granted Critical
Publication of GB2279498B publication Critical patent/GB2279498B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking
GB9323286A 1993-06-25 1993-11-11 Electrode connections for semiconductor devices Expired - Fee Related GB2279498B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9702460A GB2307103B (en) 1993-06-25 1993-11-11 Electrode connections for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5154642A JPH0730095A (ja) 1993-06-25 1993-06-25 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
GB9323286D0 GB9323286D0 (en) 1994-01-05
GB2279498A GB2279498A (en) 1995-01-04
GB2279498B true GB2279498B (en) 1997-09-17

Family

ID=15588684

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9323286A Expired - Fee Related GB2279498B (en) 1993-06-25 1993-11-11 Electrode connections for semiconductor devices

Country Status (4)

Country Link
US (1) US5498572A (enExample)
JP (1) JPH0730095A (enExample)
FR (1) FR2707042B1 (enExample)
GB (1) GB2279498B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144956B1 (ko) * 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
US5892282A (en) * 1995-05-31 1999-04-06 Texas Instruments Incorporated Barrier-less plug structure
TW480636B (en) 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
JP4594070B2 (ja) * 2004-04-06 2010-12-08 三菱電機株式会社 半導体レーザ素子及びその製造方法
JP2011040582A (ja) 2009-08-11 2011-02-24 Fuji Xerox Co Ltd 発光素子およびその製造方法
DE102016101801B4 (de) * 2016-02-02 2021-01-14 Infineon Technologies Ag Lastanschluss eines leistungshalbleiterbauelements, leistungshalbleitermodul damit und herstellungsverfahren dafür
US11158571B2 (en) * 2018-12-20 2021-10-26 Micron Technology, Inc. Devices including conductive interconnect structures, related electronic systems, and related methods

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1207010A (en) * 1967-12-01 1970-09-30 Semikron Gleichrichterbau Improvements relating to contact electrodes
EP0127281A1 (en) * 1983-03-25 1984-12-05 Fujitsu Limited An electrode for a semiconductor device
EP0209654A2 (en) * 1985-05-13 1987-01-28 Kabushiki Kaisha Toshiba Semiconductor device having wiring electrodes
EP0269211A2 (en) * 1986-09-17 1988-06-01 Fujitsu Limited Semiconductor device having a metallic layer
EP0305296A1 (en) * 1987-08-28 1989-03-01 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
EP0339871A2 (en) * 1988-04-29 1989-11-02 Advanced Micro Devices, Inc. Corrosion tolerant bonding pad and method of fabricating same
EP0353120A1 (en) * 1988-07-25 1990-01-31 Fujitsu Limited A method of forming a barrier layer between a silicon substrate and an aluminium electrode of a semiconductor device
EP0402061A2 (en) * 1989-06-05 1990-12-12 Motorola, Inc. Metallization process
EP0412185A1 (de) * 1989-08-09 1991-02-13 Siemens Aktiengesellschaft Metallisierung mit Diffusionsbarriere für Halbleiterbauelemente
WO1993011558A1 (en) * 1991-11-26 1993-06-10 Materials Research Corporation Method of modifying contact resistance in semiconductor devices and articles produced thereby

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066465A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPH065734B2 (ja) * 1985-09-28 1994-01-19 新日本無線株式会社 半導体装置
JPS6289355A (ja) * 1985-10-16 1987-04-23 Hitachi Ltd 半導体装置
JPS62128153A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS63258021A (ja) * 1987-04-16 1988-10-25 Toshiba Corp 接続孔の形成方法
KR910006967B1 (ko) * 1987-11-18 1991-09-14 가시오 게이상기 가부시기가이샤 반도체 장치의 범프 전극 구조 및 그 형성 방법
EP0363297B1 (en) * 1988-10-03 1994-03-23 International Business Machines Corporation Improved contact stud structure for semiconductor devices
JPH02105529A (ja) * 1988-10-14 1990-04-18 Nec Corp 半導体装置の製造方法
JPH02125427A (ja) * 1988-11-04 1990-05-14 Yamaha Corp コンタクト孔形成法
US5041393A (en) * 1988-12-28 1991-08-20 At&T Bell Laboratories Fabrication of GaAs integrated circuits
JPH0396276A (ja) * 1989-09-09 1991-04-22 Mitsubishi Electric Corp 半導体装置
EP0469768A1 (en) * 1990-07-31 1992-02-05 AT&T Corp. A substantially linear field effect transistor and method of making same
JPH05175716A (ja) * 1991-12-19 1993-07-13 Furuno Electric Co Ltd 移動体用アンテナ指向装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1207010A (en) * 1967-12-01 1970-09-30 Semikron Gleichrichterbau Improvements relating to contact electrodes
EP0127281A1 (en) * 1983-03-25 1984-12-05 Fujitsu Limited An electrode for a semiconductor device
EP0209654A2 (en) * 1985-05-13 1987-01-28 Kabushiki Kaisha Toshiba Semiconductor device having wiring electrodes
EP0269211A2 (en) * 1986-09-17 1988-06-01 Fujitsu Limited Semiconductor device having a metallic layer
EP0305296A1 (en) * 1987-08-28 1989-03-01 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
EP0339871A2 (en) * 1988-04-29 1989-11-02 Advanced Micro Devices, Inc. Corrosion tolerant bonding pad and method of fabricating same
EP0353120A1 (en) * 1988-07-25 1990-01-31 Fujitsu Limited A method of forming a barrier layer between a silicon substrate and an aluminium electrode of a semiconductor device
EP0402061A2 (en) * 1989-06-05 1990-12-12 Motorola, Inc. Metallization process
EP0412185A1 (de) * 1989-08-09 1991-02-13 Siemens Aktiengesellschaft Metallisierung mit Diffusionsbarriere für Halbleiterbauelemente
WO1993011558A1 (en) * 1991-11-26 1993-06-10 Materials Research Corporation Method of modifying contact resistance in semiconductor devices and articles produced thereby

Also Published As

Publication number Publication date
GB9323286D0 (en) 1994-01-05
FR2707042A1 (enExample) 1994-12-30
FR2707042B1 (enExample) 1997-11-28
US5498572A (en) 1996-03-12
GB2279498A (en) 1995-01-04
JPH0730095A (ja) 1995-01-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19991111