FR2707042A1 - - Google Patents

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Publication number
FR2707042A1
FR2707042A1 FR9314598A FR9314598A FR2707042A1 FR 2707042 A1 FR2707042 A1 FR 2707042A1 FR 9314598 A FR9314598 A FR 9314598A FR 9314598 A FR9314598 A FR 9314598A FR 2707042 A1 FR2707042 A1 FR 2707042A1
Authority
FR
France
Prior art keywords
electrode
film
metal
metal layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9314598A
Other languages
English (en)
French (fr)
Other versions
FR2707042B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2707042A1 publication Critical patent/FR2707042A1/fr
Application granted granted Critical
Publication of FR2707042B1 publication Critical patent/FR2707042B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR9314598A 1993-06-25 1993-12-06 Expired - Fee Related FR2707042B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5154642A JPH0730095A (ja) 1993-06-25 1993-06-25 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
FR2707042A1 true FR2707042A1 (enExample) 1994-12-30
FR2707042B1 FR2707042B1 (enExample) 1997-11-28

Family

ID=15588684

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9314598A Expired - Fee Related FR2707042B1 (enExample) 1993-06-25 1993-12-06

Country Status (4)

Country Link
US (1) US5498572A (enExample)
JP (1) JPH0730095A (enExample)
FR (1) FR2707042B1 (enExample)
GB (1) GB2279498B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144956B1 (ko) * 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
US5892282A (en) * 1995-05-31 1999-04-06 Texas Instruments Incorporated Barrier-less plug structure
TW480636B (en) * 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
JP4594070B2 (ja) * 2004-04-06 2010-12-08 三菱電機株式会社 半導体レーザ素子及びその製造方法
JP2011040582A (ja) * 2009-08-11 2011-02-24 Fuji Xerox Co Ltd 発光素子およびその製造方法
DE102016101801B4 (de) * 2016-02-02 2021-01-14 Infineon Technologies Ag Lastanschluss eines leistungshalbleiterbauelements, leistungshalbleitermodul damit und herstellungsverfahren dafür
US11158571B2 (en) * 2018-12-20 2021-10-26 Micron Technology, Inc. Devices including conductive interconnect structures, related electronic systems, and related methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125427A (ja) * 1988-11-04 1990-05-14 Yamaha Corp コンタクト孔形成法
EP0378894A2 (en) * 1988-12-28 1990-07-25 AT&T Corp. Fabrication of GaAs integrated circuits
EP0412185A1 (de) * 1989-08-09 1991-02-13 Siemens Aktiengesellschaft Metallisierung mit Diffusionsbarriere für Halbleiterbauelemente
EP0469768A1 (en) * 1990-07-31 1992-02-05 AT&T Corp. A substantially linear field effect transistor and method of making same
WO1993011558A1 (en) * 1991-11-26 1993-06-10 Materials Research Corporation Method of modifying contact resistance in semiconductor devices and articles produced thereby

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614668B2 (de) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Halbleiter-Anordnung mit Großflächigen, gut lötbaren Kontaktelektroden und Verfahren zu ihrer Herstellung
JPS59175763A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置
JPS6066465A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
EP0209654B1 (en) * 1985-05-13 1994-12-14 Kabushiki Kaisha Toshiba Semiconductor device having wiring electrodes
JPH065734B2 (ja) * 1985-09-28 1994-01-19 新日本無線株式会社 半導体装置
JPS6289355A (ja) * 1985-10-16 1987-04-23 Hitachi Ltd 半導体装置
JPS62128153A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS6373660A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置
JPS63258021A (ja) * 1987-04-16 1988-10-25 Toshiba Corp 接続孔の形成方法
US4987562A (en) * 1987-08-28 1991-01-22 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
KR910006967B1 (ko) * 1987-11-18 1991-09-14 가시오 게이상기 가부시기가이샤 반도체 장치의 범프 전극 구조 및 그 형성 방법
EP0339871A3 (en) * 1988-04-29 1990-12-27 Advanced Micro Devices, Inc. Corrosion tolerant bonding pad and method of fabricating same
JPH0666287B2 (ja) * 1988-07-25 1994-08-24 富士通株式会社 半導体装置の製造方法
EP0363297B1 (en) * 1988-10-03 1994-03-23 International Business Machines Corporation Improved contact stud structure for semiconductor devices
JPH02105529A (ja) * 1988-10-14 1990-04-18 Nec Corp 半導体装置の製造方法
JP2661333B2 (ja) * 1989-06-05 1997-10-08 モトローラ・インコーポレーテツド 金属被覆化プロセス処理方法
JPH0396276A (ja) * 1989-09-09 1991-04-22 Mitsubishi Electric Corp 半導体装置
JPH05175716A (ja) * 1991-12-19 1993-07-13 Furuno Electric Co Ltd 移動体用アンテナ指向装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125427A (ja) * 1988-11-04 1990-05-14 Yamaha Corp コンタクト孔形成法
EP0378894A2 (en) * 1988-12-28 1990-07-25 AT&T Corp. Fabrication of GaAs integrated circuits
EP0412185A1 (de) * 1989-08-09 1991-02-13 Siemens Aktiengesellschaft Metallisierung mit Diffusionsbarriere für Halbleiterbauelemente
EP0469768A1 (en) * 1990-07-31 1992-02-05 AT&T Corp. A substantially linear field effect transistor and method of making same
WO1993011558A1 (en) * 1991-11-26 1993-06-10 Materials Research Corporation Method of modifying contact resistance in semiconductor devices and articles produced thereby

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 359 (E - 0959) 3 August 1990 (1990-08-03) *

Also Published As

Publication number Publication date
US5498572A (en) 1996-03-12
JPH0730095A (ja) 1995-01-31
GB2279498B (en) 1997-09-17
FR2707042B1 (enExample) 1997-11-28
GB9323286D0 (en) 1994-01-05
GB2279498A (en) 1995-01-04

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