JPH0566027B2 - - Google Patents

Info

Publication number
JPH0566027B2
JPH0566027B2 JP57226273A JP22627382A JPH0566027B2 JP H0566027 B2 JPH0566027 B2 JP H0566027B2 JP 57226273 A JP57226273 A JP 57226273A JP 22627382 A JP22627382 A JP 22627382A JP H0566027 B2 JPH0566027 B2 JP H0566027B2
Authority
JP
Japan
Prior art keywords
cel
insulating film
ary
memory cell
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57226273A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59117258A (ja
Inventor
Shinichiro Mitani
Kyoshi Pponma
Kanji Funaki
Tadafumi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Renesas Technology America Inc
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Hitachi Micro Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd, Hitachi Micro Systems Inc filed Critical Hitachi Microcomputer System Ltd
Priority to JP57226273A priority Critical patent/JPS59117258A/ja
Publication of JPS59117258A publication Critical patent/JPS59117258A/ja
Publication of JPH0566027B2 publication Critical patent/JPH0566027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57226273A 1982-12-24 1982-12-24 半導体装置の製造方法 Granted JPS59117258A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226273A JPS59117258A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226273A JPS59117258A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1332730A Division JPH0612806B2 (ja) 1989-12-25 1989-12-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS59117258A JPS59117258A (ja) 1984-07-06
JPH0566027B2 true JPH0566027B2 (enExample) 1993-09-20

Family

ID=16842617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226273A Granted JPS59117258A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59117258A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031268A (ja) * 1983-07-29 1985-02-18 Nec Corp Ｍｉｓ型半導体記憶装置
JPH0616549B2 (ja) * 1984-04-17 1994-03-02 三菱電機株式会社 半導体集積回路装置
JPS6126253A (ja) * 1984-07-16 1986-02-05 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置の製造方法
JPS6151868A (ja) * 1984-08-21 1986-03-14 Nec Corp 半導体装置
JPH0782753B2 (ja) * 1984-08-31 1995-09-06 三菱電機株式会社 ダイナミックメモリ装置
JPS6187359A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体メモリセル
US4694561A (en) * 1984-11-30 1987-09-22 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making high-performance trench capacitors for DRAM cells
JPH0680804B2 (ja) * 1984-12-18 1994-10-12 株式会社東芝 半導体装置の製造方法
JPS61208256A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 半導体記憶装置
JPH0682800B2 (ja) * 1985-04-16 1994-10-19 株式会社東芝 半導体記憶装置
JPS6221266A (ja) * 1985-07-19 1987-01-29 Sanyo Electric Co Ltd 半導体メモリセル
JPH0793372B2 (ja) * 1985-12-16 1995-10-09 株式会社東芝 半導体記憶装置
JPH0738418B2 (ja) * 1986-02-13 1995-04-26 日本電気株式会社 半導体装置
JPH0828468B2 (ja) * 1986-04-15 1996-03-21 松下電子工業株式会社 半導体メモリ装置
JPS62273764A (ja) * 1986-05-21 1987-11-27 Matsushita Electronics Corp 半導体メモリ装置
US4959698A (en) * 1986-10-08 1990-09-25 Mitsubishi Denki Kabushiki Kaisha Memory cell of a semiconductor memory device
JPS63124454A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
JPS63104466A (ja) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Ｍｏｓ型ダイナミツクｒａｍ
JPS6394669A (ja) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp 半導体記憶装置
JP2608054B2 (ja) * 1986-10-20 1997-05-07 三菱電機株式会社 半導体記憶装置の製造方法
JP2595945B2 (ja) * 1986-11-13 1997-04-02 三菱電機株式会社 半導体記憶装置
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method
JP2633577B2 (ja) * 1987-09-10 1997-07-23 株式会社東芝 ダイナミックメモリセル及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349969A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor memory unit
JPS5632463U (enExample) * 1979-08-20 1981-03-30
JPS5643171U (enExample) * 1979-09-10 1981-04-20
JPS5643171A (en) * 1979-09-17 1981-04-21 Mitsubishi Electric Corp Informing device for platform of elevator
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device
JPS592362A (ja) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法

Also Published As

Publication number Publication date
JPS59117258A (ja) 1984-07-06

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